公开(公告)号：US08721798B2

公开(公告)日：2014-05-13

申请号：US12916462

申请日：2010-10-29

Applicant: James P. Cruse ,  Dermot Cantwell ,  Ming Xu ,  Charles Hardy ,  Benjamin Schwarz ,  Kenneth S. Collins ,  Andrew Nguyen ,  Zhifeng Sui ,  Evans Lee

Inventor： James P. Cruse ,  Dermot Cantwell ,  Ming Xu ,  Charles Hardy ,  Benjamin Schwarz ,  Kenneth S. Collins ,  Andrew Nguyen ,  Zhifeng Sui ,  Evans Lee

IPC: B08B6/00 ,  C25F5/00

CPC classification number: H01L21/6719 ,  H01J37/32899

Abstract: Methods for processing substrates in twin chamber processing systems having first and second process chambers and shared processing resources are provided herein. In some embodiments, a method may include providing a substrate to the first process chamber of the twin chamber processing system, wherein the first process chamber has a first processing volume that is independent from a second processing volume of the second process chamber; providing one or more processing resources from the shared processing resources to only the first processing volume of the first process chamber; and performing a process on the substrate in the first process chamber.

Abstract translation: 本文提供了具有第一处理室和第二处理室以及共享处理资源的双室处理系统中处理基板的方法。 在一些实施例中，方法可以包括向双室处理系统的第一处理室提供衬底，其中第一处理室具有独立于第二处理室的第二处理容积的第一处理容积; 将所述共享处理资源中的一个或多个处理资源提供给所述第一处理室的所述第一处理空间; 以及在所述第一处理室中的所述基板上进行处理。

公开(公告)号：US08707754B2

公开(公告)日：2014-04-29

申请号：US12915345

申请日：2010-10-29

Applicant: James P. Cruse ,  John W. Lane ,  Mariusch Gregor ,  Duc Buckius ,  Berrin Daran ,  Corie Lynn Cobb ,  Ming Xu ,  Andrew Nguyen

Inventor： James P. Cruse ,  John W. Lane ,  Mariusch Gregor ,  Duc Buckius ,  Berrin Daran ,  Corie Lynn Cobb ,  Ming Xu ,  Andrew Nguyen

IPC: G01F25/00 ,  H01L21/66 ,  F16K37/00 ,  H01L21/67 ,  H01L21/306 ,  H01L21/36

CPC classification number: H01L21/67253 ,  F16K37/00 ,  F16K37/0091 ,  G01F25/00 ,  Y10T29/53022 ,  Y10T137/8158 ,  Y10T137/87153 ,  Y10T137/87684 ,  Y10T137/877

Abstract: Methods and apparatus for calibrating a plurality of gas flows in a substrate processing system are provided herein. In some embodiments, a substrate processing system may include a cluster tool comprising a first process chamber and a second process chamber coupled to a central vacuum transfer chamber; a first flow controller to provide a process gas to the first process chamber; a second flow controller to provide the process gas to the second process chamber; a mass flow verifier to verify a flow rate from each of the first and second flow controllers; a first conduit to selectively couple the first flow controller to the mass flow verifier; and a second conduit to selectively couple the second flow controller to the mass flow verifier.

Abstract translation: 本文提供了用于校准衬底处理系统中的多个气流的方法和装置。 在一些实施例中，衬底处理系统可以包括簇工具，其包括耦合到中心真空传送室的第一处理室和第二处理室; 第一流量控制器，用于向第一处理室提供处理气体; 第二流量控制器，用于向第二处理室提供处理气体; 质量流量验证器，用于验证来自所述第一和第二流量控制器中的每一个的流量; 用于选择性地将第一流量控制器耦合到质量流量验证器的第一导管; 以及用于选择性地将第二流量控制器耦合到质量流量验证器的第二导管。

公开(公告)号：US08616224B2

公开(公告)日：2013-12-31

申请号：US12907944

申请日：2010-10-19

Applicant: Jared Ahmad Lee ,  Martin Jeff Salinas ,  Ezra Robert Gold ,  James P. Cruse

Inventor： Jared Ahmad Lee ,  Martin Jeff Salinas ,  Ezra Robert Gold ,  James P. Cruse

IPC: B08B3/00

CPC classification number: F17D3/03 ,  H01J37/3244 ,  H01J37/32899 ,  H01L21/02071 ,  H01L21/6719 ,  H01L21/67201 ,  Y10T137/0318 ,  Y10T137/877

Abstract: A method and apparatus for supplying a gas mixture to a load lock chamber is described. In one embodiment, the apparatus supplies a gas mixture to a pair of process chambers, comprising a first ozone generator to provide a first gas mixture to a first process chamber, a second ozone generator to provide a second gas mixture to a second process chamber, a first gas source coupled to the first ozone generator via a first mass flow controller and a first gas line, and coupled to the second ozone generator via a second mass flow controller and a second gas line, and a second gas source coupled to the first ozone generator via a third mass flow controller and a third gas line and coupled to the second ozone generator via fourth mass flow controller and a fourth gas line.

Abstract translation: 描述了一种将气体混合物供应到负载锁定室的方法和装置。 在一个实施例中，该装置将气体混合物提供给一对处理室，包括第一臭氧发生器以向第一处理室提供第一气体混合物，第二臭氧发生器将第二气体混合物提供给第二处理室， 第一气体源，经由第一质量流量控制器和第一气体管线耦合到第一臭氧发生器，并且经由第二质量流量控制器和第二气体管线耦合到第二臭氧发生器，以及耦合到第一气体源的第一气体源 臭氧发生器，经由第三质量流量控制器和第三气体管线，并经由第四质量流量控制器和第四气体管线与第二臭氧发生器连接。

公开(公告)号：US08616043B2

公开(公告)日：2013-12-31

申请号：US12916450

申请日：2010-10-29

Applicant: James P. Cruse ,  Ezra Robert Gold ,  Jared Ahmad Lee ,  Ming Xu

Inventor： James P. Cruse ,  Ezra Robert Gold ,  Jared Ahmad Lee ,  Ming Xu

IPC: G01L27/02

CPC classification number: G01L27/005 ,  H01L21/67253 ,  Y10T137/86083

Abstract: Systems and methods for calibrating pressure gauges in one or more process chambers coupled to a transfer chamber having a transfer volume is disclosed herein. The method includes providing a first pressure in the transfer volume and in a first inner volume of a first process chamber coupled to the transfer chamber, wherein the transfer volume and the first inner volume are fluidly coupled, injecting a calibration gas into the transfer volume to raise a pressure in the transfer volume and in the first inner volume to a second pressure, measuring the second pressure using each of a reference pressure gauge coupled to the transfer chamber and a first pressure gauge coupled to the first process chamber while the transfer volume and the first inner volume are fluidly coupled, and calibrating the first pressure gauge based on a difference in the measured second pressure between the reference pressure gauge and the first pressure gauge.

Abstract translation: 本文公开了用于校准耦合到具有转移体积的转移室的一个或多个处理室中的压力计的系统和方法。 该方法包括在传送体积和连接到传送室的第一处理室的第一内部容积中提供第一压力，其中传送体积和第一内部体积被流体耦合，将校准气体注入到传送体积中 将传送体积和第一内部体积中的压力提高到第二压力，使用耦合到传送室的参考压力表中的每一个测量第二压力，以及耦合到第一处理室的第一压力表，同时传送体积和 第一内部体积流体耦合，并且基于测量的参考压力计和第一压力计之间的第二压力的差异校准第一压力计。

公开(公告)号：US20120222752A1

公开(公告)日：2012-09-06

申请号：US13408709

申请日：2012-02-29

Applicant: Adauto Diaz ,  Andrew Nguyen ,  Benjamin Schwarz ,  Eu Jin Lim ,  Jared Ahmad Lee ,  James P. Cruse ,  Li Zhang ,  Scott M. Williams ,  Xiaoliang Zhuang ,  Zhuang Li

Inventor： Adauto Diaz ,  Andrew Nguyen ,  Benjamin Schwarz ,  Eu Jin Lim ,  Jared Ahmad Lee ,  James P. Cruse ,  Li Zhang ,  Scott M. Williams ,  Xiaoliang Zhuang ,  Zhuang Li

IPC: B08B5/00

CPC classification number: B08B5/00 ,  C23C16/44 ,  C23C16/4408 ,  H01J37/32449 ,  H01J37/32724 ,  H01J37/32862 ,  Y10T137/0419

Abstract: Methods for reducing the contamination of a gas distribution plate are provided. In one embodiment, a method for processing a substrate includes transferring the substrate into a chamber, performing a treating process on the substrate, and providing a purge gas into the chamber before or after the treating process to pump out a residue gas relative to the treating process from the chamber. The treating process includes distributing a reactant gas into the chamber through a gas distribution plate.

Abstract translation: 提供减少气体分布板污染的方法。 在一个实施例中，一种用于处理衬底的方法包括将衬底转移到腔室中，在衬底上执行处理过程，并且在处理过程之前或之后向室中提供净化气体，以相对于处理 过程从房间。 处理过程包括通过气体分配板将反应气体分配到室中。

公开(公告)号：US20110266256A1

公开(公告)日：2011-11-03

申请号：US12916462

申请日：2010-10-29

Applicant: James P. Cruse ,  Dermot Cantwell ,  Ming Xu ,  Charles Hardy ,  Benjamin Schwarz ,  Kenneth S. Collins ,  Andrew Nguyen ,  Zhifeng Sui ,  Evans Lee

Inventor： James P. Cruse ,  Dermot Cantwell ,  Ming Xu ,  Charles Hardy ,  Benjamin Schwarz ,  Kenneth S. Collins ,  Andrew Nguyen ,  Zhifeng Sui ,  Evans Lee

IPC: C23F1/00 ,  C23C16/455

CPC classification number: H01L21/6719 ,  H01J37/32899

Abstract: Methods for processing substrates in twin chamber processing systems having first and second process chambers and shared processing resources are provided herein. In some embodiments, a method may include providing a substrate to the first process chamber of the twin chamber processing system, wherein the first process chamber has a first processing volume that is independent from a second processing volume of the second process chamber; providing one or more processing resources from the shared processing resources to only the first processing volume of the first process chamber; and performing a process on the substrate in the first process chamber.

Abstract translation: 本文提供了具有第一处理室和第二处理室以及共享处理资源的双室处理系统中处理基板的方法。 在一些实施例中，方法可以包括向双室处理系统的第一处理室提供衬底，其中第一处理室具有独立于第二处理室的第二处理容积的第一处理容积; 将所述共享处理资源中的一个或多个处理资源提供给所述第一处理室的所述第一处理空间; 以及在所述第一处理室中的所述基板上进行处理。

公开(公告)号：US07968469B2

公开(公告)日：2011-06-28

申请号：US11733984

申请日：2007-04-11

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger, Jr. ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger, Jr. ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC: H01L21/302

CPC classification number: H01J37/32174 ,  H01J37/32091 ,  H01J37/32165

Abstract: A method for processing a workpiece in a plasma reactor chamber includes coupling RF power at a first VHF frequency f1 to a plasma via one of the electrodes of the chamber, and providing a center ground return path for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequency f1. The method further includes providing a variable height edge ground annular element and providing a ground return path through the edge ground annular element for the frequency f1. The method controls the uniformity of plasma ion density distribution by controlling the distance between the variable height edge ground annular element and one of: (a) height of ceiling electrode or (b) height of workpiece support electrode.

Abstract translation: 用于在等离子体反应器室中处理工件的方法包括通过室的电极之一将RFF功率在第一VHF频率f1耦合到等离子体，并且提供用于RF电流的中心接地返回路径，其直接通过天花板电极和 工件支撑电极为频率f1。 该方法还包括提供可变高度边缘的地面环形元件，并为频率f1提供通过边缘接地环形元件的接地返回路径。 该方法通过控制可变高度边缘接地环形元件之间的距离和（a）天花板电极的高度或（b）工件支撑电极的高度来控制等离子体离子密度分布的均匀性。

公开(公告)号：US07884025B2

公开(公告)日：2011-02-08

申请号：US11733767

申请日：2007-04-11

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger, Jr. ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger, Jr. ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC: H01L21/302

CPC classification number: C23C16/45574 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01L21/67069 ,  H01L21/6831

Abstract: In a plasma reactor chamber a ceiling electrode and a workpiece support electrode, respective RF power sources of respective VHF frequencies f1 and f2 are coupled to either respective ones of the electrodes or to a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. Respective center ground return paths are provided for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequencies f1 and f2, and an edge ground return path is provided for each of the frequencies f1 and f2. The impedance of at least one of the ground return paths is adjusted so as to control the uniformity of the plasma ion density distribution.

Abstract translation: 在等离子体反应器室中，天花板电极和工件支撑电极，各个VHF频率f1和f2的相应RF功率源耦合到电极中的相应电极或共同的一个电极，其中f1足够高以产生 中心高的不均匀等离子体离子分布和f2足够低以产生中心 - 低不均匀的等离子体离子分布。 提供各自的中心接地返回路径用于频率f1和f2直接通过天花板电极和工件支撑电极之间的RF电流，并为每个频率f1和f2提供边缘接地返回路径。 调整至少一个接地返回路径的阻抗，以便控制等离子体离子密度分布的均匀性。

公开(公告)号：US07879731B2

公开(公告)日：2011-02-01

申请号：US11733764

申请日：2007-04-11

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger, Jr. ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger, Jr. ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC: H01L21/302

CPC classification number: H01J37/32174 ,  H01J37/32091 ,  H01J37/32165

Abstract: A method is provided for processing a workpiece in a plasma reactor chamber having electrodes including at least a ceiling electrode and a workpiece support electrode. The method includes coupling respective RF power sources of respective VHF frequencies f1 and f2 to either (a) respective ones of the electrodes or (b) a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. The method further includes adjusting a ratio of an RF parameter at the f1 frequency to the RF parameter at the f2 frequency so as to control plasma ion density distribution, the RF parameter being any one of RF power, RF voltage or RF current.

Abstract translation: 提供了一种用于处理具有至少包括天花板电极和工件支撑电极的电极的等离子体反应器室中的工件的方法。 该方法包括将相应的VHF频率f1和f2的相应RF功率源耦合到（a）电极中的相应电极或（b）共同的一个电极，其中f1足够高以产生中心高的不均匀 等离子体离子分布和f2足够低以产生中心 - 低不均匀的等离子体离子分布。 该方法还包括调整f1频率处的RF参数与f2频率处的RF参数的比率，以便控制等离子体离子密度分布，RF参数是RF功率，RF电压或RF电流中的任何一个。

公开(公告)号：US07552736B2

公开(公告)日：2009-06-30

申请号：US11685775

申请日：2007-03-14

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC: C25F1/00 ,  C25F3/30 ,  C25F5/00

CPC classification number: H01L21/68764 ,  H01J37/32357 ,  H01J37/32366 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68728

Abstract: A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving at least a peripheral annular portion of the backside exposed. The process further includes confining gas flow at the edge of the workpiece within a gap at the edge of the workpiece on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the wafer front side and a lower process zone containing the wafer backside. The process also includes providing a polymer etch precursor gas underneath the backside edge of the workpiece and applying RF power to a region underlying the backside edge of the workpiece to generate a first plasma of polymer etch species concentrated in an annular ring concentric with and underneath the backside edge of the workpiece.

Abstract translation: 提供了从工件的背面除去聚合物的方法。 该方法包括在真空室的背面支撑工件，同时至少留下背面的周边环形部分。 该方法还包括将工件边缘处的气流限制在工件边缘的间隙中约为室直径的约1％，间隙限定了包含晶片前端的上工艺区域之间的边界 侧面和下部工艺区域，其中包含晶片背面。 该方法还包括在工件的后边缘下方提供聚合物蚀刻前体气体，并将RF功率施加到工件的后边缘下方的区域，以产生聚集在一起的聚合物蚀刻物质等离子体 工件的后边缘。