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    PHOTONIC CRYSTAL STRUCTURES AND METHODS OF MAKING AND USING PHOTONIC CRYSTAL STRUCTURES
    43.
    发明申请
    PHOTONIC CRYSTAL STRUCTURES AND METHODS OF MAKING AND USING PHOTONIC CRYSTAL STRUCTURES 有权
    光子晶体结构和制造和使用光子晶体结构的方法

    公开(公告)号：US20080279242A1

    公开(公告)日：2008-11-13

    申请号：US11745027

    申请日：2007-05-07

    申请人： David P. Bour

    发明人： David P. Bour

    IPC分类号： H01S5/34 ,  H01L33/00

    CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/10 ,  H01S2304/12

    摘要： A light emitting device having a buried photonic bandgap (PBG) structure is created using a relatively simple fabrication method known as epitaxial layer overgrowth (ELOG). By burying the PBG structure, the difficulties and disadvantages associated with the known technique of etching holes into a LED emission surface to form the PBG structure are avoided.

    摘要翻译： 使用称为外延层过度生长（ELOG）的相对简单的制造方法产生具有掩埋光子带隙（PBG）结构的发光器件。 通过埋入PBG结构，避免了将已知的将孔蚀刻到LED发射表面中以形成PBG结构的技术的困难和缺点。

    Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublattice
    45.
    发明授权
    Group III-V semiconductor devices including semiconductor materials made by spatially-selective intermixing of atoms on the group V sublattice 失效
    III-V族半导体器件包括通过V族子晶格上的原子的空间选择性混合制成的半导体材料

    公开(公告)号：US06878959B2

    公开(公告)日：2005-04-12

    申请号：US10303044

    申请日：2002-11-22

    申请人： David P. Bour ,  Ying-Lan Chang ,  Tetsuya Takeuchi ,  Danny E. Mars

    发明人： David P. Bour ,  Ying-Lan Chang ,  Tetsuya Takeuchi ,  Danny E. Mars

    IPC分类号： H01L21/20 ,  H01L29/20 ,  H01L29/205 ,  H01S5/223 ,  H01S5/343 ,  H01L29/06

    CPC分类号： H01L29/205 ,  H01L29/2003

    摘要： The group III-V semiconductor device comprises a quantum well layer, barrier layers sandwiching the quantum well layer and a region of a third semiconductor material formed by spatially-selective intermixing of atoms on the group V sublattice between the first semiconductor material of the quantum well layer and the second semiconductor material of the barrier layer. The quantum well layer is a layer of a first semiconductor material that has a band gap energy and a refractive index. The barrier layers are layers of a second semiconductor material that has a higher band gap energy and a lower refractive index than the first semiconductor material. The third semiconductor material has a band gap energy and a refractive index intermediate between the band gap energy and the refractive index, respectively, of the first semiconductor material and the second semiconductor material.

    摘要翻译： III-V族半导体器件包括量子阱层，夹着量子阱层的阻挡层和通过在量子阱的第一半导体材料之间的第V族子晶格上的原子空间选择性混合而形成的第三半导体材料的区域 层和阻挡层的第二半导体材料。 量子阱层是具有带隙能量和折射率的第一半导体材料的层。 阻挡层是具有比第一半导体材料更高的带隙能量和较低折射率的第二半导体材料的层。 第三半导体材料分别具有第一半导体材料和第二半导体材料的带隙能量和介于带隙能量和折射率之间的折射率。