公开(公告)号：US06764926B2

公开(公告)日：2004-07-20

申请号：US10106472

申请日：2002-03-25

申请人： Tetsuya Takeuchi ,  Ying-Lan Chang ,  David P. Bour ,  Michael H. Leary ,  Michael R. T. Tan ,  Andy Luan

发明人： Tetsuya Takeuchi ,  Ying-Lan Chang ,  David P. Bour ,  Michael H. Leary ,  Michael R. T. Tan ,  Andy Luan

IPC分类号： H01L2100

CPC分类号： C30B25/02 ,  C23C16/301 ,  C23C16/4401 ,  C23C16/4405 ,  C30B29/403 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02579 ,  H01L21/0262

摘要： A method for making high quality InGaAsN semiconductor devices is presented. The method allows the making of high quality InGaAsN semiconductor devices using a single MOCVD reactor while avoiding aluminum contamination.

摘要翻译： 提出了一种制造高品质InGaAsN半导体器件的方法。 该方法允许使用单个MOCVD反应器制造高质量的InGaAsN半导体器件，同时避免铝污染。

公开(公告)号：US06813295B2

公开(公告)日：2004-11-02

申请号：US10106678

申请日：2002-03-25

申请人： Tetsuya Takeuchi ,  Ying-Lan Chang ,  David P. Bour ,  Michael H. Leary ,  Michael R. T. Tan

发明人： Tetsuya Takeuchi ,  Ying-Lan Chang ,  David P. Bour ,  Michael H. Leary ,  Michael R. T. Tan

IPC分类号： H01S500

CPC分类号： H01S5/18313 ,  H01S5/3095 ,  H01S5/32366 ,  H01S2304/04

摘要： Various asymmetric InGaAsN VCSEL structures that are made using an MOCVD process are presented. Use of the asymmetric structure effectively eliminates aluminum contamination of the quantum well active region.

摘要翻译： 提出了使用MOCVD工艺制造的各种非对称InGaAsN VCSEL结构。 使用不对称结构有效地消除了量子阱活性区域的铝污染。

公开(公告)号：US06878970B2

公开(公告)日：2005-04-12

申请号：US10418408

申请日：2003-04-17

申请人： David P. Bour ,  Michael H. Leary ,  Ying-Lan Chang ,  Yoon-Kyu Song ,  Michael R. T. Tan ,  Tetsuya Takeuchi ,  Danielle Chamberlin

发明人： David P. Bour ,  Michael H. Leary ,  Ying-Lan Chang ,  Yoon-Kyu Song ,  Michael R. T. Tan ,  Tetsuya Takeuchi ,  Danielle Chamberlin

IPC分类号： H01S5/343 ,  H01L33/06 ,  H01L33/10 ,  H01L33/32 ,  H01L33/00 ,  H01L29/06

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/105

摘要： Light-emitting devices are described. One example of a light-emitting device includes a first barrier layer and a second barrier layer, and a quantum well layer located between the first and second barrier layers. The first and second barrier layers are composed of gallium arsenide, and the quantum well layer is composed of indium gallium arsenide nitride. A first layer is located between the quantum well layer and the first barrier layer. The first layer has a bandgap energy between that of the first barrier layer and that of the quantum well layer. Another example of a light-emitting device includes a quantum well and a carrier capture element adjacent the quantum well. The carrier capture element increases the effective carrier capture cross-section of the quantum well.

摘要翻译： 描述发光器件。 发光器件的一个示例包括第一阻挡层和第二阻挡层，以及位于第一和第二阻挡层之间的量子阱层。 第一和第二阻挡层由砷化镓构成，量子阱层由氮化铟镓组成。 第一层位于量子阱层和第一阻挡层之间。 第一层在第一阻挡层和量子阱层的能隙之间具有带隙能。 发光器件的另一示例包括量子阱和邻近量子阱的载流子俘获元件。 载体捕获元素增加量子阱的有效载流子俘获截面。

公开(公告)号：US07033938B2

公开(公告)日：2006-04-25

申请号：US10785747

申请日：2004-02-23

申请人： David P. Bour ,  Tetsuya Takeuchi ,  Ashish Tandon ,  Ying-Lan Chang ,  Michael R. T. Tan ,  Scott W. Corzine

发明人： David P. Bour ,  Tetsuya Takeuchi ,  Ashish Tandon ,  Ying-Lan Chang ,  Michael R. T. Tan ,  Scott W. Corzine

IPC分类号： H01L21/44

CPC分类号： C30B25/02 ,  C30B29/403 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/105 ,  H01S5/32366 ,  Y10S438/936 ,  Y10S438/938 ,  Y10S438/956

摘要： The active region of a long-wavelength light emitting device is made by providing an organometallic vapor phase epitaxy (OMVPE) reactor, placing a substrate wafer capable of supporting growth of indium gallium arsenide nitride in the reactor, supplying a Group III–V precursor mixture comprising an arsenic precursor, a nitrogen precursor, a gallium precursor, an indium precursor and a carrier gas to the reactor and pressurizing the reactor to a sub-atmospheric elevated growth pressure no higher than that at which a layer of indium gallium arsenide layer having a nitrogen fraction commensurate with light emission at a wavelength longer than 1.2 μm is deposited over the substrate wafer.

摘要翻译： 通过提供有机金属气相外延（OMVPE）反应器，将能够支持砷化镓镓氮化物的生长的衬底晶片放置在反应器中，提供III-V族前体混合物，制造长波长发光器件的有源区 包括砷前体，氮前体，镓前体，铟前体和载气，并将反应器加压至不高于砷化镓砷化物层的亚大气压升高的生长压力 在基片晶片上沉积与长于1.2μm波长的发光相当的氮气分数。

公开(公告)号：US06756325B2

公开(公告)日：2004-06-29

申请号：US10140625

申请日：2002-05-07

申请人： David P. Bour ,  Tetsuya Takeuchi ,  Ashish Tandon ,  Ying-Lan Chang ,  Michael R. T. Tan ,  Scott Corzine

发明人： David P. Bour ,  Tetsuya Takeuchi ,  Ashish Tandon ,  Ying-Lan Chang ,  Michael R. T. Tan ,  Scott Corzine

IPC分类号： H01L2100

CPC分类号： C30B25/02 ,  C30B29/403 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/105 ,  H01S5/32366 ,  Y10S438/936 ,  Y10S438/938 ,  Y10S438/956

摘要： Several methods for producing an active region for a long wavelength light emitting device are disclosed. In one embodiment, the method comprises placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an indium gallium arsenide nitride (InGaAsN) film, supplying to the reactor a group-III-V precursor mixture comprising arsine, dimethylhydrazine, alkyl-gallium, alkyl-indium and a carrier gas, where the arsine and the dimethylhydrazine are the group-V precursor materials and where the percentage of dimethylhydrazine substantially exceeds the percentage of arsine, and pressurizing the reactor to a pressure at which a concentration of nitrogen commensurate with light emission at a wavelength longer than 1.2 um is extracted from the dimethylhydrazine and deposited on the substrate.

摘要翻译： 公开了用于制造用于长波长发光器件的有源区的几种方法。 在一个实施方案中，该方法包括将衬底放置在有机金属气相外延（OMVPE）反应器中，该衬底用于支持砷化铟镓氮化物（InGaAsN）膜的生长，向反应器供应III-V族前体混合物，其包含 胂，二甲基肼，烷基镓，烷基铟和载气，其中胂和二甲基肼是Ⅴ族前体材料，其中二甲基肼的百分比基本上超过胂的百分比，并将反应器加压至 其中与二氧化肼的二氧化氮中提取出长于1.2μm的波长的发光相当的氮浓度并沉积在基板上。

公开(公告)号：US06931044B2

公开(公告)日：2005-08-16

申请号：US10368274

申请日：2003-02-18

申请人： David P. Bour ,  Michael R. T. Tan ,  Ying-Lan Chang

发明人： David P. Bour ,  Michael R. T. Tan ,  Ying-Lan Chang

IPC分类号： H01S5/20 ,  H01L33/06 ,  H01S5/00 ,  H01S5/183 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343

CPC分类号： H01S5/183 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3422 ,  H01S5/34306 ,  H01S5/34353

摘要： A method and apparatus is provided for improving the temperature performance of GaAsSb materials utilizing an AlGaInP confinement structure. An active region containing a GaAsSb quantum well layer and (In)GaAs barrier layers is sandwiched between two AlGaInP confinement layers. AlGaInP confinement structures provide sufficient electron confinement, thereby improving the stability of the threshold current with respect to increasing temperature for GaAsSb/GaAs heterostructures.

摘要翻译： 提供了一种利用AlGaInP约束结构来改善GaAsSb材料的温度性能的方法和装置。 包含GaAsSb量子阱层和（In）GaAs势垒层的有源区夹在两个AlGaInP限制层之间。 AlGaInP约束结构提供了足够的电子限制，从而提高了GaAsSb / GaAs异质结构相对于增加温度的阈值电流的稳定性。

公开(公告)号：US07034331B2

公开(公告)日：2006-04-25

申请号：US10861144

申请日：2004-06-04

申请人： Ying-Lan Chang ,  Ashish Tandon ,  Michael H. Leary ,  Michael R. T. Tan

发明人： Ying-Lan Chang ,  Ashish Tandon ,  Michael H. Leary ,  Michael R. T. Tan

IPC分类号： H01L29/06

CPC分类号： B82Y20/00 ,  H01S5/0421 ,  H01S5/18308 ,  H01S5/18313 ,  H01S5/3095 ,  H01S5/32366 ,  H01S5/34306 ,  Y10S257/918

摘要： The tunnel junction structure comprises a p-type tunnel junction layer of a first semiconductor material, an n-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. At least one of the semiconductor materials includes gallium (Ga), arsenic (As) and either nitrogen (N) or antimony (Sb). The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer.

摘要翻译： 隧道结结构包括第一半导体材料的p型隧道结层，第二半导体材料的n型隧道结层和隧道结层之间的隧道结。 至少一种半导体材料包括镓（Ga），砷（As）和氮（N）或锑（Sb）。 通过形成隧道结结构的隧道结结构，隧道结的电压降明显增加，并且通过形成具有p型隧道结层的材料的价带能量与 n型隧道结层的导带能量。

公开(公告)号：US06878959B2

公开(公告)日：2005-04-12

申请号：US10303044

申请日：2002-11-22

申请人： David P. Bour ,  Ying-Lan Chang ,  Tetsuya Takeuchi ,  Danny E. Mars

发明人： David P. Bour ,  Ying-Lan Chang ,  Tetsuya Takeuchi ,  Danny E. Mars

IPC分类号： H01L21/20 ,  H01L29/20 ,  H01L29/205 ,  H01S5/223 ,  H01S5/343 ,  H01L29/06

CPC分类号： H01L29/205 ,  H01L29/2003

摘要： The group III-V semiconductor device comprises a quantum well layer, barrier layers sandwiching the quantum well layer and a region of a third semiconductor material formed by spatially-selective intermixing of atoms on the group V sublattice between the first semiconductor material of the quantum well layer and the second semiconductor material of the barrier layer. The quantum well layer is a layer of a first semiconductor material that has a band gap energy and a refractive index. The barrier layers are layers of a second semiconductor material that has a higher band gap energy and a lower refractive index than the first semiconductor material. The third semiconductor material has a band gap energy and a refractive index intermediate between the band gap energy and the refractive index, respectively, of the first semiconductor material and the second semiconductor material.

摘要翻译： III-V族半导体器件包括量子阱层，夹着量子阱层的阻挡层和通过在量子阱的第一半导体材料之间的第V族子晶格上的原子空间选择性混合而形成的第三半导体材料的区域 层和阻挡层的第二半导体材料。 量子阱层是具有带隙能量和折射率的第一半导体材料的层。 阻挡层是具有比第一半导体材料更高的带隙能量和较低折射率的第二半导体材料的层。 第三半导体材料分别具有第一半导体材料和第二半导体材料的带隙能量和介于带隙能量和折射率之间的折射率。

公开(公告)号：US07269196B2

公开(公告)日：2007-09-11

申请号：US10885952

申请日：2004-07-06

申请人： Ashish Tandon ,  Michael R. T. Tan ,  Ying-Lan Chang

发明人： Ashish Tandon ,  Michael R. T. Tan ,  Ying-Lan Chang

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/18358 ,  H01S5/2009 ,  H01S5/34313 ,  H01S5/34346 ,  H01S5/34353 ,  H01S5/34386

摘要： The method comprises forming barrier layers of AlxGa1-xAs, forming a quantum well layer of InGaAs between the barrier layers, and forming an interfacial layer between the quantum well layer and each of the barrier layers.

摘要翻译： 该方法包括形成Al x Ga 1-x As的阻挡层，在阻挡层之间形成InGaAs的量子阱层，并在量子阱之间形成界面层 层和每个阻挡层。

公开(公告)号：US06711195B2

公开(公告)日：2004-03-23

申请号：US10087422

申请日：2002-02-28

申请人： Ying-Lan Chang ,  Scott W. Corzine ,  Russell D. Dupuis ,  Min Soo Noh ,  Jae Hyun Ryou ,  Michael R. T. Tan ,  Ashish Tandon

发明人： Ying-Lan Chang ,  Scott W. Corzine ,  Russell D. Dupuis ,  Min Soo Noh ,  Jae Hyun Ryou ,  Michael R. T. Tan ,  Ashish Tandon

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/3422 ,  H01S5/343 ,  H01S5/34306

摘要： The long-wavelength photonic device comprises an active region that includes at least one quantum-well layer of a quantum-well layer material that comprises InyGa1-yAsSb in which y≧0, and that additionally includes a corresponding number of barrier layers each of a barrier layer material that includes gallium and phosphorus. The barrier layer material has a conduction-band energy level greater than the conduction-band energy level of the quantum-well layer material and has a valence-band energy level less than the valence-band energy level of the quantum-well layer material.

摘要翻译： 长波长光子器件包括有源区，该有源区包括至少一个量子阱层材料的量子阱层，该量子阱层材料包括其中y> = 0的In y Ga 1-y As Sb，并且另外包括相应数量的势垒层 包括镓和磷的阻挡层材料。 阻挡层材料的导带能级大于量子阱层材料的导带能级，并且具有小于量子阱层材料的价带能级的价带能级。