公开(公告)号：US07785988B2

公开(公告)日：2010-08-31

申请号：US12243411

申请日：2008-10-01

申请人： Karl R. Amundson ,  Guy M. Danner ,  Gregg M. Duthaler ,  Peter T. Kazlas ,  Yu Chen ,  Kevin L. Denis ,  Nathan R. Kane ,  Andrew P. Ritenour

发明人： Karl R. Amundson ,  Guy M. Danner ,  Gregg M. Duthaler ,  Peter T. Kazlas ,  Yu Chen ,  Kevin L. Denis ,  Nathan R. Kane ,  Andrew P. Ritenour

IPC分类号： H01L21/30

CPC分类号： H01L27/1266 ,  B60C23/04 ,  G02F1/133305 ,  G02F1/1362 ,  G02F1/167 ,  G02F2001/13613 ,  H01L27/1214 ,  H01L27/1288 ,  H01L29/66765 ,  H01L29/78603

摘要： A non-linear element is formed on a flexible substrate by securing the substrate to a rigid carrier, forming the non-linear element, and then separating the flexible substrate from the carrier. The process allows flexible substrates to be processed in a conventional fab intended to process rigid substrates. In a second method, a transistor is formed on a insulating substrate by forming gate electrodes, depositing a dielectric layer, a semiconductor layer and a conductive layer, patterning the conductive layer to form source, drain and pixel electrodes, covering the channel region of the resultant transistor with an etch-resistant material and etching using the etch-resistant material and the conductive layer as a mask, the etching extending substantially through the semiconductor layer between adjacent transistors. The invention also provides a process for forming a diode on a substrate by depositing on the substrate a first conductive layer, and a second patterned conductive layer and a patterned dielectric layer over parts of the first conductive layer, and etching the first conductive layer using the second conductive layer and dielectric layer as an etch mask. Finally, the invention provides a process for driving an impulse-sensitive electro-optic display.

摘要翻译： 通过将基板固定到刚性载体上，形成非线性元件，然后将柔性基板与载体分离，在柔性基板上形成非线性元件。 该方法允许柔性基底在旨在处理刚性基底的常规晶圆中进行加工。 在第二种方法中，通过形成栅电极，沉积介电层，半导体层和导电层，在绝缘基板上形成晶体管，图案化导电层以形成源极，漏极和像素电极，覆盖该沟道区 具有耐蚀刻材料的合成晶体管和使用耐蚀刻材料和导电层作为掩模的蚀刻，蚀刻基本上延伸通过相邻晶体管之间的半导体层。 本发明还提供了一种通过在衬底上沉积第一导电层以及第二图案化导电层和在第一导电层的部分上的图案化电介质层在衬底上形成二极管的工艺，并且使用 第二导电层和介电层作为蚀刻掩模。 最后，本发明提供一种驱动脉冲敏感电光显示器的方法。

公开(公告)号：US20090315044A1

公开(公告)日：2009-12-24

申请号：US12552334

申请日：2009-09-02

申请人： Karl R. Amundson ,  Andrew P. Ritenour ,  Gregg M. Duthaler ,  Paul S. Drzaic ,  Yu Chen ,  Peter T. Kazlas

发明人： Karl R. Amundson ,  Andrew P. Ritenour ,  Gregg M. Duthaler ,  Paul S. Drzaic ,  Yu Chen ,  Peter T. Kazlas

IPC分类号： H01L33/00 ,  H01L29/78 ,  H01L21/336 ,  H01L21/3205

CPC分类号： G02F1/167 ,  G02F1/1368 ,  G02F1/1681 ,  H01L21/02104 ,  H01L21/30604 ,  H01L21/308 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/127 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78603 ,  H01L29/78666 ,  H01L33/48

摘要： An electro-optic display comprises a substrate (100), non-linear devices (102) disposed substantially in one plane on the substrate (100), pixel electrodes (106) connected to the non-linear devices (102), an electro-optic medium (110) and a common electrode (112) on the opposed side of the electro-optic medium (110) from the pixel electrodes (106). The moduli of the various parts of the display are arranged so that, when the display is curved, the neutral axis or neutral plane lies substantially in the plane of the non-linear devices (102).

摘要翻译： 电光显示器包括基板（100），基本上设置在基板（100）上的一个平面中的非线性装置（102），连接到非线性装置（102）的像素电极（106） 光学介质（110）和与所述电光介质（110）相对的所述像素电极（106）的公共电极（112）。 显示器的各个部件的模量被布置成使得当显示器弯曲时，中性轴线或中性平面基本上位于非线性装置（102）的平面中。

公开(公告)号：US20090029527A1

公开(公告)日：2009-01-29

申请号：US12243411

申请日：2008-10-01

申请人： Karl R. Amundson ,  Guy M. Danner ,  Gregg M. Duthaler ,  Peter T. Kazlas ,  Yu Chen ,  Kevin L. Denis ,  Nathan R. Kane ,  Andrew P. Ritenour

发明人： Karl R. Amundson ,  Guy M. Danner ,  Gregg M. Duthaler ,  Peter T. Kazlas ,  Yu Chen ,  Kevin L. Denis ,  Nathan R. Kane ,  Andrew P. Ritenour

IPC分类号： H01L21/64

CPC分类号： H01L27/1266 ,  B60C23/04 ,  G02F1/133305 ,  G02F1/1362 ,  G02F1/167 ,  G02F2001/13613 ,  H01L27/1214 ,  H01L27/1288 ,  H01L29/66765 ,  H01L29/78603

摘要： A non-linear element is formed on a flexible substrate by securing the substrate to a rigid carrier, forming the non-linear element, and then separating the flexible substrate from the carrier. The process allows flexible substrates to be processed in a conventional fab intended to process rigid substrates. In a second method, a transistor is formed on a insulating substrate by forming gate electrodes, depositing a dielectric layer, a semiconductor layer and a conductive layer, patterning the conductive layer to form source, drain and pixel electrodes, covering the channel region of the resultant transistor with an etch-resistant material and etching using the etch-resistant material and the conductive layer as a mask, the etching extending substantially through the semiconductor layer between adjacent transistors. The invention also provides a process for forming a diode on a substrate by depositing on the substrate a first conductive layer, and a second patterned conductive layer and a patterned dielectric layer over parts of the first conductive layer, and etching the first conductive layer using the second conductive layer and dielectric layer as an etch mask. Finally, the invention provides a process for driving an impulse-sensitive electro-optic display.

摘要翻译： 通过将基板固定到刚性载体上，形成非线性元件，然后将柔性基板与载体分离，在柔性基板上形成非线性元件。 该方法允许柔性基底在旨在处理刚性基底的常规晶圆中进行加工。 在第二种方法中，通过形成栅电极，沉积介电层，半导体层和导电层，在绝缘基板上形成晶体管，图案化导电层以形成源极，漏极和像素电极，覆盖该沟道区 具有耐蚀刻材料的合成晶体管和使用耐蚀刻材料和导电层作为掩模的蚀刻，蚀刻基本上延伸通过相邻晶体管之间的半导体层。 本发明还提供了一种通过在衬底上沉积第一导电层以及第二图案化导电层和在第一导电层的部分上的图案化电介质层在衬底上形成二极管的工艺，并且使用 第二导电层和介电层作为蚀刻掩模。 最后，本发明提供一种驱动脉冲敏感电光显示器的方法。

公开(公告)号：US20080318030A1

公开(公告)日：2008-12-25

申请号：US12205267

申请日：2008-09-05

申请人： Erik S. Handy ,  Joseph Michael Kunze ,  Peter T. Kazlas

发明人： Erik S. Handy ,  Joseph Michael Kunze ,  Peter T. Kazlas

IPC分类号： B32B7/12

CPC分类号： H01L21/6835 ,  H01L51/0013 ,  H01L2221/68359 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2924/0002 ,  H01L2924/19041 ,  Y10T428/26 ,  Y10T428/2839 ,  Y10T428/2848 ,  H01L2924/00

摘要： The present invention is directed to methods for transferring pre-formed electronic devices, such as transistors, resistors, capacitors, diodes, semiconductors, inductors, conductors, and dielectrics, and segments of materials, such as magnetic materials and crystalline materials onto a variety of receiving substrates using energetic beam transfer methods. Also provided is a consumable intermediate comprising a transfer substrate and a transfer material coated thereon, wherein the transfer material may be comprised of pre-formed electronic devices or magnetic materials and crystalline materials that may be transferred to a variety of receiving substrates. Aspects of the present invention may also be used to form multi-device electronic components such as sensor devices, electro-optical devices, communications devices, transmit-receive modules, and phased arrays using the consumable intermediates and transfer methods described herein.

摘要翻译： 本发明涉及用于将诸如晶体管，电阻器，电容器，二极管，半导体，电感器，导体和电介质的预成型电子器件和诸如磁性材料和结晶材料的材料段转移到各种 使用能量束传递方法接收衬底。 还提供了包括转印基材和涂覆在其上的转印材料的消耗性中间体，其中转印材料可以由预先形成的电子器件或磁性材料以及可以转移到各种接收基底的结晶材料构成。 本发明的各方面也可用于使用本文描述的可消耗的中间体和转移方法来形成诸如传感器装置，电光装置，通信装置，发射 - 接收模块和相控阵列的多装置电子部件。

公开(公告)号：US06825068B2

公开(公告)日：2004-11-30

申请号：US09836884

申请日：2001-04-17

申请人： Kevin L. Denis ,  Yu Chen ,  Paul S. Drzaic ,  Joseph M. Jacobson ,  Peter T. Kazlas

发明人： Kevin L. Denis ,  Yu Chen ,  Paul S. Drzaic ,  Joseph M. Jacobson ,  Peter T. Kazlas

IPC分类号： H01L2100

CPC分类号： H01L29/66765 ,  H01L29/78603

摘要： Transistors are formed by depositing at least one layer of semiconductor material on a substrate comprising a polyphenylene polyimide. The substrate permits the use of processing temperatures in excess of 300° C. during the processes used to form the transistors, thus allowing the formation of high quality silicon semiconductor layers. The substrate also has a low coefficient of thermal expansion, which closely matches that of silicon, thus reducing any tendency for a silicon layer to crack or delaminate.

摘要翻译： 晶体管通过在包含聚亚苯基聚酰亚胺的衬底上沉积至少一层半导体材料形成。 在用于形成晶体管的工艺期间，衬底允许使用超过300℃的处理温度，从而允许形成高质量的硅半导体层。 该基板也具有低的热膨胀系数，其与硅的热膨胀系数非常接近，从而减少硅层破裂或分层的任何趋势。

公开(公告)号：US06504524B1

公开(公告)日：2003-01-07

申请号：US09520743

申请日：2000-03-08

申请人： Holly Gates ,  Barrett Comiskey ,  Peter T. Kazlas ,  Jonathan D. Albert ,  Paul S. Drzaic

发明人： Holly Gates ,  Barrett Comiskey ,  Peter T. Kazlas ,  Jonathan D. Albert ,  Paul S. Drzaic

IPC分类号： G09G334

CPC分类号： G09G3/344 ,  G02F1/167 ,  G09G2310/04 ,  G09G2310/06 ,  G09G2320/0204

摘要： Novel addressing schemes for controlling electronically addressable displays include the use of addressing signals with additional signals having opposite polarity and equal integrated signal strength and addressing schemes that minimize the number of state changes that a display element undergoes. In one embodiment, pre-pulses are employed to apply a pre-stress to an display element that is equal and opposite to the electrical stress applied in addressing the element. In another embodiment, the addressing signal is followed by a post-stressing pulse. Methods for minimizing the number of display elements that must change state to change the image displayed include the determination of a set of elements that must be deactivated and a set of elements that must be activated to change the image depicted by a display.

摘要翻译： 用于控制电子可寻址显示器的新型寻址方案包括使用具有相反极性和相等的集成信号强度的附加信号的寻址信号以及使显示元件经历的状态变化的数量最小化的寻址方案。 在一个实施例中，采用预脉冲来对显示元件施加预应力，所述显示元件与在寻址元件时施加的电应力相等和相反。 在另一个实施例中，寻址信号之后是后应力脉冲。 用于最小化必须改变状态以改变显示的图像的显示元素的数量的方法包括必须被去激活的一组元素的确定以及必须被激活以改变由显示器描绘的图像的一组元素。

公开(公告)号：US09793505B2

公开(公告)日：2017-10-17

申请号：US12896856

申请日：2010-10-02

申请人： Zhaoqun Zhou ,  Peter T. Kazlas ,  Mead Misic ,  Zoran Popovic ,  John Spencer Morris

发明人： Zhaoqun Zhou ,  Peter T. Kazlas ,  Mead Misic ,  Zoran Popovic ,  John Spencer Morris

IPC分类号： H01L33/04 ,  B82Y99/00 ,  H01L51/50 ,  B82Y20/00

CPC分类号： H01L51/5012 ,  B82Y20/00 ,  H01L51/5048 ,  H01L51/5088 ,  H01L2251/552

摘要： A light emitting device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a cathode, a layer comprising a material capable of transporting and injection electrons comprising an inorganic material, an emissive layer comprising quantum dots, a layer comprising a material capable of transporting holes, a layer comprising a hole injection material, and an anode. In certain embodiments, the hole injection material can be a p-type doped hole transport material. In certain preferred embodiments, quantum dots comprise semiconductor nanocrystals. In another aspect of the invention, there is provided a light emitting device wherein the device has an initial turn-on voltage that is not greater than 1240/λ, wherein λ represents the wavelength (nm) of light emitted by the emissive layer. Other light emitting devices and a method are disclosed.

公开(公告)号：US09525148B2

公开(公告)日：2016-12-20

申请号：US13441394

申请日：2012-04-06

申请人： Peter T. Kazlas ,  Zhaoqun Zhou ,  Yuhua Niu ,  Sang-Jin Kim ,  Benjamin S. Mashford

发明人： Peter T. Kazlas ,  Zhaoqun Zhou ,  Yuhua Niu ,  Sang-Jin Kim ,  Benjamin S. Mashford

IPC分类号： H01L29/08 ,  H01L51/00 ,  H01L51/50 ,  B82Y20/00

CPC分类号： H01L51/502 ,  B82Y20/00 ,  H01L51/50 ,  H01L51/5004 ,  H01L51/5048 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5221 ,  H01L51/56 ,  H01L2251/301 ,  H01L2251/303 ,  H01L2251/5369 ,  H01L2251/552 ,  H01L2251/556

摘要： A device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a first electrode and a second electrode, a layer comprising quantum dots disposed between the first electrode and the second electrodes, and a first interfacial layer disposed at the interface between a surface of the layer comprising quantum dots and a first layer in the device. In certain embodiments, a second interfacial layer is optionally further disposed on the surface of the layer comprising quantum dots opposite to the first interfacial layer. In certain embodiments, a device comprises a light-emitting device. Other light emitting devices and methods are disclosed.

摘要翻译： 公开了一种包括包含量子点的发射材料的装置。 在一个实施例中，该装置包括第一电极和第二电极，包括设置在第一电极和第二电极之间的量子点的层以及设置在包括量子点的层的表面之间的界面处的第一界面层 设备中的第一层。 在某些实施方案中，第二界面层任选进一步设置在包含与第一界面层相对的量子点的层的表面上。 在某些实施例中，装置包括发光装置。 公开了其它发光器件和方法。

公开(公告)号：US09520573B2

公开(公告)日：2016-12-13

申请号：US13422683

申请日：2012-03-16

申请人： Zhaoqun Zhou ,  Peter T. Kazlas ,  Benjamin S. Mashford

发明人： Zhaoqun Zhou ,  Peter T. Kazlas ,  Benjamin S. Mashford

IPC分类号： H01L51/42 ,  H01L51/50 ,  C09K11/02 ,  C09K11/56 ,  C09K11/88 ,  H05B33/14 ,  B82Y30/00 ,  H01L33/06

CPC分类号： H01L51/502 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C09K11/025 ,  C09K11/565 ,  C09K11/883 ,  H01L33/06 ,  H01L51/005 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/4233 ,  H01L51/5056 ,  H01L51/5088 ,  H01L2251/5369 ,  H05B33/14 ,  Y02E10/549 ,  Y10S977/774 ,  Y10S977/892 ,  Y10S977/896 ,  Y10S977/95

摘要： A device comprises an anode; a cathode; a layer therebetween comprising quantum dots; and a first layer comprising a material capable of transporting and injecting electrons in, or forming, contact with the cathode, the material comprising nanoparticles of an inorganic semiconductor material. In one embodiment of the device, quantum dots comprise a core comprising a first semiconductor material that confines holes better than electrons in the core and an outer shell comprising a second semiconductor material that is permeable to electrons. In another embodiment of the device, the nanoparticles comprise n-doped inorganic semiconductor material, and a second layer comprising a material capable of transporting electrons is disposed between the layer including quantum dots and the first layer, wherein the second layer has a lower electron conductivity than the first. In a further embodiment of the device, the first layer is UV treated. A method and other embodiments are also disclosed.

摘要翻译： 一种装置包括阳极; 阴极 其间包括量子点的层; 以及第一层，其包括能够传输和注入电子或与阴极形成接触的材料，所述材料包含无机半导体材料的纳米颗粒。 在该器件的一个实施例中，量子点包括一个芯，该芯包含一个第一半导体材料，该第一半导体材料限制了比芯中的电子更好的孔，以及一个外壳，其包含一个可渗透电子的第二半导体材料。 在该器件的另一实施例中，纳米颗粒包括n掺杂的无机半导体材料，并且包括能够传输电子的材料的第二层设置在包括量子点和第一层的层之间，其中第二层具有较低的电子传导性 比第一个。 在装置的另一实施例中，第一层被UV处理。 还公开了一种方法和其他实施例。

公开(公告)号：US20130161663A1

公开(公告)日：2013-06-27

申请号：US13764179

申请日：2013-02-11

申请人： Karl R. Amundson ,  Andrew P. Ritenour ,  Gregg M. Duthaler ,  Paul S. Drzaic ,  Yu Chen ,  Peter T. Kazlas

发明人： Karl R. Amundson ,  Andrew P. Ritenour ,  Gregg M. Duthaler ,  Paul S. Drzaic ,  Yu Chen ,  Peter T. Kazlas

IPC分类号： H01L33/48 ,  H01L21/02

CPC分类号： G02F1/167 ,  G02F1/1368 ,  G02F2001/1672 ,  H01L21/02104 ,  H01L21/30604 ,  H01L21/308 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/127 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78603 ,  H01L29/78666 ,  H01L33/48

摘要： An electro-optic display comprises a substrate (100), non-linear devices (102) disposed substantially in one plane on the substrate (100), pixel electrodes (106) connected to the non-linear devices (102), an electro-optic medium (110) and a common electrode (112) on the opposed side of the electro-optic medium (110) from the pixel electrodes (106). The moduli of the various parts of the display are arranged so that, when the display is curved, the neutral axis or neutral plane lies substantially in the plane of the non-linear devices (102).