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    Manufacturable laser diodes on a large area gallium and nitrogen containing substrate
    41.
    发明授权
    Manufacturable laser diodes on a large area gallium and nitrogen containing substrate 有权

    公开(公告)号：US11715927B2

    公开(公告)日：2023-08-01

    申请号：US17552261

    申请日：2021-12-15

    Applicant: KYOCERA SLD Laser, Inc.

    Inventor： Melvin McLaurin ,  James W. Raring

    IPC: H01S5/02 ,  H01S5/343

    CPC classification number: H01S5/0217 ,  H01S5/0203 ,  H01S5/34333 ,  H01S2304/12

    Abstract: The present disclosure provides a method and structure for producing large area gallium and nitrogen engineered substrate members configured for the epitaxial growth of layer structures suitable for the fabrication of high performance semiconductor devices. In a specific embodiment the engineered substrates are used to manufacture gallium and nitrogen containing devices based on an epitaxial transfer process wherein as-grown epitaxial layers are transferred from the engineered substrate to a carrier wafer for processing. In a preferred embodiment, the gallium and nitrogen containing devices are laser diode devices operating in the 390 nm to 425 nm range, the 425 nm to 485 nm range, the 485 nm to 550 nm range, or greater than 550 nm.

    MANUFACTURABLE RGB LASER DIODE SOURCE AND SYSTEM
    48.
    发明申请
    MANUFACTURABLE RGB LASER DIODE SOURCE AND SYSTEM 有权

    公开(公告)号：US20220077658A1

    公开(公告)日：2022-03-10

    申请号：US17477016

    申请日：2021-09-16

    Applicant: KYOCERA SLD Laser, Inc.

    Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  Eric Goutain ,  James W. Raring ,  Paul Rudy ,  Vlad Novotny

    IPC: H01S5/40 ,  H01L33/00 ,  H01S5/323 ,  H01L23/00 ,  H01S5/02 ,  H01S5/0234

    Abstract: A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.

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