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    Integrated capacitive and inductive power sources for a plasma etching chamber
    41.
    发明授权
    Integrated capacitive and inductive power sources for a plasma etching chamber 有权
    用于等离子体蚀刻室的集成电容和感应电源

    公开(公告)号：US08911590B2

    公开(公告)日：2014-12-16

    申请号：US11363703

    申请日：2006-02-27

    申请人： Rajinder Dhindsa ,  Mukund Srinivasan ,  Kenji Takeshita ,  Alexei Marakhtanov ,  Andreas Fischer

    发明人： Rajinder Dhindsa ,  Mukund Srinivasan ,  Kenji Takeshita ,  Alexei Marakhtanov ,  Andreas Fischer

    IPC分类号： H01L21/306 ,  C23C16/00 ,  H01J37/32

    CPC分类号： H01J37/32862 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32642

    摘要： Broadly speaking, the embodiments of the present invention provide an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.

    摘要翻译： 广义而言，本发明的实施例提供了一种改进的室清洁机构。 本发明还可以用于提供附加的旋钮来调整蚀刻工艺。 在一个实施例中，构造成产生等离子体的等离子体处理室包括具有底部电极的底部电极组件，其中底部电极被配置为容纳衬底。 等离子体处理室包括具有顶部电极的顶部电极组件和围绕顶部电极的感应线圈。 感应线圈被配置为将气体转变成在腔室内限定的区域内的等离子体，其中该区域位于限定在底部电极的顶表面之上的区域之外。

    Laser scanning optical apparatus having exclusive optical elements at varying distances from receiving surfaces
    47.
    发明授权
    Laser scanning optical apparatus having exclusive optical elements at varying distances from receiving surfaces 有权
    激光扫描光学装置具有距离接收表面不同距离的专用光学元件

    公开(公告)号：US07515168B2

    公开(公告)日：2009-04-07

    申请号：US11519769

    申请日：2006-09-13

    申请人： Kenji Takeshita ,  Atsushi Ohata ,  Hajime Taniguchi

    发明人： Kenji Takeshita ,  Atsushi Ohata ,  Hajime Taniguchi

    IPC分类号： B41J15/14 ,  B41J27/00

    CPC分类号： B41J2/473 ,  G02B26/123

    摘要： A laser scanning optical apparatus wherein a plural number of beams are deflected by one polygon mirror and are scanned on respective corresponding photosensitive drums via a scanning optical system. The scanning optical system has a first scanning lens which transmits all the beams, exclusive second scanning lenses which transmit exclusively the respective beams and plane mirrors for reflecting the beams. The second scanning lenses are located such that at least one of the second scanning lenses is at a distance from the corresponding photosensitive drum on which the beam transmitted by the at least one of the second scanning lenses is scanned and that another second scanning lens is at another distance from the corresponding photosensitive drum on which the beams transmitted by the another second scanning lens is scanned. For example, at least one of the exclusive optical elements is at a distance from the corresponding photosensitive drum, and the other exclusive optical elements are at another distance from the respective corresponding photosensitive drums. Alternatively, the exclusive optical elements are at mutually different distances from the respective corresponding photosensitive drums.

    摘要翻译： 一种激光扫描光学装置，其中多个光束被一个多面镜偏转并且经由扫描光学系统在相应的对应的感光鼓上进行扫描。 扫描光学系统具有透射所有光束的第一扫描透镜，专门发送各个光束的专用第二扫描透镜和用于反射光束的平面镜。 第二扫描透镜被定位成使得至少一个第二扫描透镜距离相应的感光鼓一个距离，在该感光鼓上扫描由至少一个第二扫描透镜发射的光束，并且另一个第二扫描透镜处于 距离相应的感光鼓的另一个距离，其上扫描由另一个第二扫描透镜传输的光束。 例如，至少一个专用光学元件距离对应的感光鼓有一定距离，而其他专用光学元件距离各个相应的感光鼓相距一定距离。 或者，专用光学元件与相应的相应的感光鼓相距不同的距离。

    UNIFORM ETCH SYSTEM
    48.
    发明申请
    UNIFORM ETCH SYSTEM 有权
    均匀蚀刻系统

    公开(公告)号：US20080210377A1

    公开(公告)日：2008-09-04

    申请号：US12055212

    申请日：2008-03-25

    申请人： Dean J. Larson ,  Babak Kadkhodayan ,  Di Wu ,  Kenji Takeshita ,  Bi-Ming Yen ,  Xingcai Su ,  William M. Denty ,  Peter Loewenhardt

    发明人： Dean J. Larson ,  Babak Kadkhodayan ,  Di Wu ,  Kenji Takeshita ,  Bi-Ming Yen ,  Xingcai Su ,  William M. Denty ,  Peter Loewenhardt

    IPC分类号： C23F1/08

    CPC分类号： H01L21/67017

    摘要： Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.

    摘要翻译： 提供了在衬底上蚀刻一层。 将基板放置在等离子体处理室中。 第一气体被提供到等离子体处理室内的内部区域。 第二气体被提供到等离子体处理室内的外部区域，其中外部区域围绕内部区域并且第一气体不同于第二气体。 从第一气体和第二气体同时产生等离子体。 蚀刻该层，其中该层被来自第一气体和第二气体的等离子体蚀刻。

    Uniform etch system
    49.
    发明授权
    Uniform etch system 有权
    均匀刻蚀系统

    公开(公告)号：US07371332B2

    公开(公告)日：2008-05-13

    申请号：US10642083

    申请日：2003-08-14

    申请人： Dean J. Larson ,  Babak Kadkhodayan ,  Di Wu ,  Kenji Takeshita ,  Bi-Ming Yen ,  Xingcai Su ,  William M. Denty, Jr. ,  Peter Loewenhardt

    发明人： Dean J. Larson ,  Babak Kadkhodayan ,  Di Wu ,  Kenji Takeshita ,  Bi-Ming Yen ,  Xingcai Su ,  William M. Denty, Jr. ,  Peter Loewenhardt

    IPC分类号： H01L21/306

    CPC分类号： H01L21/67017

    摘要： Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.

    摘要翻译： 提供了在衬底上蚀刻一层。 将基板放置在等离子体处理室中。 第一气体被提供到等离子体处理室内的内部区域。 第二气体被提供到等离子体处理室内的外部区域，其中外部区域围绕内部区域并且第一气体不同于第二气体。 从第一气体和第二气体同时产生等离子体。 蚀刻该层，其中该层被来自第一气体和第二气体的等离子体蚀刻。

    Vacuum plasma processor method
    50.
    发明授权
    Vacuum plasma processor method 失效
    真空等离子体处理器方法

    公开(公告)号：US06897156B2

    公开(公告)日：2005-05-24

    申请号：US10347363

    申请日：2003-01-21

    申请人： Tuqiang Ni ,  Kenji Takeshita ,  Tom Choi ,  Frank Y. Lin

    发明人： Tuqiang Ni ,  Kenji Takeshita ,  Tom Choi ,  Frank Y. Lin

    IPC分类号： H05H1/46 ,  B01J3/00 ,  B01J19/08 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/302

    CPC分类号： H01J37/321

    摘要： 200 mm and 300 mm wafers are processed in vacuum plasma processing chambers that are the same or have the same geometry. Substantially planar excitation coils having different geometries for the wafers of different sizes excite ionizable gas in the chamber to a plasma by supplying electromagnetic fields to the plasma through a dielectric window at the top of the chamber. Both coils include plural symmetrical, substantially circular turns coaxial with a center point of the coil and at least one turn that is asymmetrical with respect to the coil center point. Both coils include four turns, with r.f. excitation being applied to the turn that is closest to the coil center point. The turn that is third farthest from the center point is asymmetric in the coil used for 200 mm wafers. The two turns closest to the coil center point are asymmetric in the coil used for 300 mm wafers.

    摘要翻译： 200mm和300mm晶片在相同或具有相同几何形状的真空等离子体处理室中进行处理。 对于不同尺寸的晶片，具有不同几何形状的基本上平面的激励线圈通过在腔室的顶部处的电介质窗口向等离子体提供电磁场，从而激发腔室中的可电离气体到等离子体。 两个线圈包括与线圈的中心点同轴的多个对称的基本圆形的匝和至少一个相对于线圈中心点不对称的匝。 两个线圈包括四圈，r.f. 激励被施加到最接近线圈中心点的转弯。 距离中心点第三远的转弯在用于200 mm晶圆的线圈中是不对称的。 在线圈中心点最近的两个转弯在用于300毫米晶圆的线圈中是不对称的。