公开(公告)号：US07896524B2

公开(公告)日：2011-03-01

申请号：US11916263

申请日：2006-05-26

申请人： Kenji Yoneda ,  Mitsuru Saito

发明人： Kenji Yoneda ,  Mitsuru Saito

IPC分类号： F21V17/02

CPC分类号： F21V5/00 ,  F21V5/008 ,  F21V5/04 ,  F21V7/0091 ,  F21V7/04 ,  F21V13/04 ,  F21V14/00 ,  F21V14/02 ,  F21V14/06 ,  F21V21/30 ,  F21V27/02 ,  F21W2131/411 ,  F21Y2115/10 ,  G02B19/0028 ,  G02B19/0061 ,  H01L33/58 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2924/00014

摘要： The invention provides a light irradiation apparatus that can adjust widening/narrowing of a light irradiation area and can guide almost whole of light emitted from an LED to the light irradiation area.The apparatus has an LED 11 and an optical unit 2 for making light for the LED 11 pass through itself and emit from its apical surface 21, and is equipped further with a supporting body 1A for holding the LED on the apical surface and a position adjustment mechanism for adjusting a relative position of the optical unit 2 to the LED 11 along an optical axis C direction. The apparatus is configured so that the potion adjustment mechanism make the optical unit 2 move relative to the LED 11 between a proximity position P1 at which a part or the whole of the supporting body 1A is housed in a base end recess 25 and a clearance position P2 at which substantially whole of the supporting body 1A comes out of the base end recess 25 so that the apical surface of the supporting body 1A and a base end face 22 of the optical unit 2 become substantially the same height.

摘要翻译： 本发明提供一种光照射装置，其可以调节光照射区域的加宽/变窄，并且可以将从LED发射的几乎全部的光引导到光照射区域。 该装置具有LED 11和用于使LED 11的光通过其自身并从其顶面21发射的光学单元2，并且还配备有用于将LED保持在顶面上的支撑体1A和位置调整 用于沿着光轴C方向调整光学单元2相对于LED11的相对位置的机构。 该装置被配置为使得光学单元2相对于LED11在支撑体1A的一部分或整体容纳在基端凹部25中的接近位置P1和间隙位置之间移动 P2，其中基本上整个支撑体1A从基端凹部25出来，使得支撑体1A的顶面和光学单元2的基端面22变得基本相同的高度。

公开(公告)号：US20100033080A1

公开(公告)日：2010-02-11

申请号：US12064707

申请日：2006-08-29

申请人： Kenji Yoneda

发明人： Kenji Yoneda

IPC分类号： H01J1/62

CPC分类号： G01N21/8806 ,  H01L51/5209 ,  H01L2251/5361

摘要： The light irradiation device is for inspecting a surface of an object W such as a product by irradiating the light on the object W, and has an arrangement wherein multiple microscopic EL elements 2, each of which comprises a transparent electrode layer 22 arranged at an object side, a non-transparent electrode layer 23 arranged at an opposite side to the object W and a luminous layer 21 that is arranged between the transparent electrode layer 22 and the non-transparent electrode layer 23 and that emits the light by imparting voltage, are laid out with a space S provided between each other, thereby further promoting more even illumination, downsizing and weight saving.

摘要翻译： 光照射装置用于通过对物体W照射光来检查诸如产品的物体W的表面，并且具有其中多个微观EL元件2，其中每个包括布置在物体上的透明电极层22 配置在与物体W相反侧的非透明电极层23和布置在透明电极层22和非透明电极层23之间并通过施加电压而发光的发光层21分别为 布置有彼此之间设置的空间S，从而进一步促进更均匀的照明，减小尺寸和减轻重量。

公开(公告)号：US20090002994A1

公开(公告)日：2009-01-01

申请号：US11720420

申请日：2005-11-29

申请人： Kenji Yoneda ,  Kenji Miura

发明人： Kenji Yoneda ,  Kenji Miura

IPC分类号： F21V29/00

CPC分类号： F21V29/74 ,  F21V7/0091 ,  F21V29/767 ,  F21Y2115/10 ,  G01N21/8806 ,  G02B6/0006 ,  G02B6/4298

摘要： The light irradiation device of this invention intends to further facilitate an assembling procedure and to stabilize the quality as a product.The light irradiation device comprises an LED 5, an optical unit 4 that makes an engagement with the LED 5 with their axial lines aligned with each other, a tubular first housing element 2 having an opening D at its rear end surface for inserting the optical unit 4 and the LED 5 into the inside of the first housing element 2, a deciduous inhibition member R that makes an engagement with a vicinity of the opening D of the first housing element 2 and that prevents the optical unit 4 that has been inserted into the first housing element 2 from dropping off, a second housing element 3 that blocks up the opening D by being mounted on a predetermined position of the first housing element 2 and that forms a housing CS together with the first housing element 2, and a projecting member 10 that is arranged on the second housing element 3 to project forward, and at the predetermined position, the projecting member 10 presses the rear surface of the LED 5 to engage the optical unit 4 and the LED 5, thereby to align their axial lines.

摘要翻译： 本发明的光照射装置旨在进一步促进组装过程并使作为产品的质量稳定。 光照射装置包括LED 5，与LED 5的轴线彼此对准的光学单元4，在其后端表面具有用于插入光学单元的开口D的管状第一壳体元件2 4和LED 5进入第一壳体元件2的内部，与第一壳体元件2的开口D附近接合并且防止插入到第一壳体元件2中的光学单元4的落叶抑制构件R 第一壳体元件2脱落时，通过安装在第一壳体元件2的预定位置并与第一壳体元件2一起形成壳体CS而阻挡开口D的第二壳体元件3，以及突出构件 10布置在第二壳体元件3上以向前突出，并且在预定位置处，突出构件10按压LED 5的后表面以接合光学单元4和LED 5 从而使其轴线对准。

公开(公告)号：US20080026251A1

公开(公告)日：2008-01-31

申请号：US11826495

申请日：2007-07-16

申请人： Jun Suzuki ,  Kenji Yoneda ,  Seiji Matsuyama

发明人： Jun Suzuki ,  Kenji Yoneda ,  Seiji Matsuyama

IPC分类号： H01L21/31 ,  B32B9/00 ,  C23C16/00

CPC分类号： H01L21/3141 ,  C23C16/405 ,  C23C16/45504 ,  C23C16/45546 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/31608 ,  H01L21/31645 ,  H01L21/3185

摘要： In an insulating film formation method, a cycle A in which O3 at a low flow rate is supplied onto a substrate and then O3 supplied is allowed to react with Hf on the substrate in a non-equilibrium state to form a hafnium oxide film is carried out M times (M≧1), and a cycle B in which O3 at a high flow rate is supplied onto the substrate and then O3 supplied is allowed to react with Hf on the substrate in an equilibrium state to form a hafnium oxide film is carried out N times (N≧1). These insulating film formation cycles are defined as one sequence. This sequence is repeated until a desired thickness is obtained, thereby forming a target insulating film.

摘要翻译： 在绝缘膜形成方法中，将其中以低流量供给O 3 N的循环A供应到基板上，然后将所提供的O 3与Hf反应， 在非平衡状态下形成氧化铪膜的衬底进行M次（M> = 1），并且以高流速将O 3 3的循环B供给到 将底物和然后使O 3在平衡状态下与Hf在基板上反应以形成氧化铪膜N次（N> = 1）。 这些绝缘膜形成循环被定义为一个顺序。 重复该顺序，直到获得所需的厚度，从而形成目标绝缘膜。

公开(公告)号：US07291535B2

公开(公告)日：2007-11-06

申请号：US11000209

申请日：2004-12-01

申请人： Masahiko Niwayama ,  Kenji Yoneda ,  Kazuma Takahashi

发明人： Masahiko Niwayama ,  Kenji Yoneda ,  Kazuma Takahashi

IPC分类号： H01L21/336

CPC分类号： H01L29/6659 ,  H01L21/26513 ,  H01L21/26586 ,  H01L29/045 ,  H01L29/6656 ,  H01L29/7833

摘要： A method for fabricating a semiconductor device includes the steps of: forming a semiconductor region of a first conductive type on a semiconductor wafer; forming a gate electrode on the semiconductor region; on the semiconductor region, forming a first insulating film over the whole surface including the upper surface of the gate electrode; by removing the formed first insulating film through etching from the top surface side, forming first sidewalls, covering the side surfaces of the gate electrode, from the first insulating film; and by implanting first impurity ions of a second conductive type to the semiconductor region by using an ion implantation device capable of processing a plurality of semiconductor wafers collectively, forming first impurity diffusion regions on both sides of the gate electrode in the semiconductor region. In the step of forming the first impurity diffusion regions, implantation of the first impurity ions are dividedly performed a plurality of times, and the semiconductor wafer is rotated in its wafer surface for each ion implantation.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在半导体晶片上形成第一导电类型的半导体区域; 在所述半导体区域上形成栅电极; 在所述半导体区域上，在包括所述栅电极的上表面的整个表面上形成第一绝缘膜; 通过从上表面侧蚀刻去除形成的第一绝缘膜，从第一绝缘膜形成覆盖栅电极的侧表面的第一侧壁; 并且通过使用能够一体地处理多个半导体晶片的离子注入装置将第二导电类型的第一杂质离子注入半导体区域，在半导体区域中的栅电极的两侧形成第一杂质扩散区。 在形成第一杂质扩散区域的步骤中，分散地进行第一杂质离子的注入多次，并且半导体晶片在其晶片表面中进行每次离子注入。

公开(公告)号：US07164178B2

公开(公告)日：2007-01-16

申请号：US10872403

申请日：2004-06-22

申请人： Kenji Yoneda

发明人： Kenji Yoneda

IPC分类号： H01L29/76

CPC分类号： H01L21/28185 ,  H01L21/26506 ,  H01L21/28202 ,  H01L21/823462 ,  H01L21/823857 ,  H01L29/518 ,  Y10S438/981

摘要： A semiconductor device includes a gate insulating film formed on a semiconductor substrate, and a gate electrode formed on the gate insulating film. Nitrogen is introduced into the gate insulating film, and the nitrogen concentration distribution thereof has a peak near the surface of the gate insulating film or near the center of the gate insulating film in the thickness direction. The peak value of nitrogen concentration in the gate insulating film is equal to or greater than 10 atm % and less than or equal to 40 atm %.

摘要翻译： 半导体器件包括形成在半导体衬底上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。 氮被引入栅绝缘膜中，其氮浓度分布在栅极绝缘膜的表面附近或栅极绝缘膜的厚度方向的中心附近具有峰。 栅极绝缘膜中的氮浓度的峰值等于或大于10atm％且小于或等于40atm％。

公开(公告)号：US20060213728A1

公开(公告)日：2006-09-28

申请号：US11210903

申请日：2005-08-25

申请人： Toshifumi Yoshikawa ,  Satoru Toriyabe ,  Takamichi Hoshino ,  Atsuya Fujino ,  Shunichi Tanae ,  Hiromi Inaba ,  Kenji Yoneda ,  Toru Yamaguchi ,  Ryo Okabe

发明人： Toshifumi Yoshikawa ,  Satoru Toriyabe ,  Takamichi Hoshino ,  Atsuya Fujino ,  Shunichi Tanae ,  Hiromi Inaba ,  Kenji Yoneda ,  Toru Yamaguchi ,  Ryo Okabe

IPC分类号： B66B1/18

CPC分类号： B66B1/2458 ,  B66B2201/102 ,  B66B2201/211 ,  B66B2201/216 ,  B66B2201/226 ,  B66B2201/402 ,  B66B2201/403

摘要： An elevator group control system is provided which stably keeps cage's position in temporally equal interval condition over a long period of time. The present invention provides a system comprising: reference route generating means, which for each elevator, generates a reference route which the elevator should follow with respect to the time axis and position axis; and assignment means which selects an elevator for assignment to a generated hall call so as to make the actual trajectory of each elevator closer to its reference route. Since reference routes which guides the cage's trajectory into temporally equal interval condition are generated and car assignment is executed so as to make the respective cages follow their reference routes, it is possible to allow the cages to settle in temporally equal interval condition over a long period of time.

摘要翻译： 提供一种电梯组控制系统，其在长时间内稳定地保持轿厢在时间上等间隔的位置。 本发明提供一种系统，包括：对于每个电梯，参考路线产生装置产生电梯相对于时间轴和位置轴线遵循的参考路线; 以及分配装置，其选择用于分配给所生成的门厅呼叫的电梯，以使每个电梯的实际轨迹更接近其参考路线。 由于生成将笼子的轨迹引导到时间上相等的间隔条件的参考路径，并且执行轿厢分配以使得各个笼子遵循其参考路线，所以可以允许笼在长时间等待时间上等待的条件下进行 的时间。

公开(公告)号：US20060163498A1

公开(公告)日：2006-07-27

申请号：US11204050

申请日：2005-08-16

申请人： Kenji Yoneda ,  Masahiko Niwayama

发明人： Kenji Yoneda ,  Masahiko Niwayama

IPC分类号： H01L21/265 ,  H01J37/317

CPC分类号： H01J37/3171 ,  H01J37/3023 ,  H01J2237/0044 ,  H01J2237/043

摘要： Impurity ions are implanted into a semiconductor wafer of which a capacitor insulting film is formed on a principal face. In this impurity ion implantation step, the impurity ions are implanted into the semiconductor wafer in the form of a pulsed beam that repeats ON-OFF operation intermittently.

公开(公告)号：US20050174779A1

公开(公告)日：2005-08-11

申请号：US10514221

申请日：2003-05-16

申请人： Kenji Yoneda ,  Takahiro Amano ,  Yasuhiko Inagaki

发明人： Kenji Yoneda ,  Takahiro Amano ,  Yasuhiko Inagaki

IPC分类号： F21V5/04 ,  F21V7/00 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  F21V29/00

CPC分类号： H01L33/58 ,  F21V5/04 ,  F21V7/0091 ,  F21Y2115/10 ,  H01L33/54 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2924/00014

摘要： Alight emitting diode unit comprises a light emitting element D1, a base 1 having a heat dissipating member 12 that dissipates heat generated by the light emitting element D1, and a first lens 2 comprising a reflecting element 214 that reflects light R2 traveling outside of a predetermined angle among the emitted light R emitted by the light emitting element D1 and a refracting element F that refracts light R1 traveling inside of the predetermined angle among the emitted light R, each of which is formed integrally, with the first lens 2 mounted integrally on the base 1, and the emitted light R emitted from the light emitting element D1 is made to travel generally toward the same direction by the reflecting element 214 and the refracting element F.

摘要翻译： 发光二极管单元包括发光元件D 1，具有散热由发光元件D 1产生的热量的散热构件12的基座1和第一透镜2，第一透镜2包括反射出外部的光R 2的反射元件214 在由发光元件D 1发射的发射光R中的预定角度和折射元件F，折射元件F折射在与第一透镜一体形成的发射光R中的预定角度内行进的光R 1 2一体地安装在基座1上，并且从发光元件D 1发射的发射光R通过反射元件214和折射元件F大致朝向相同的方向移动。

公开(公告)号：US20050070402A1

公开(公告)日：2005-03-31

申请号：US10947201

申请日：2004-09-23

申请人： Yusuke Kimura ,  Tatsuo Ochiai ,  Kenji Yoneda ,  Tateki Jozaki ,  Takeshi Chibahara ,  Jun Shiomi

发明人： Yusuke Kimura ,  Tatsuo Ochiai ,  Kenji Yoneda ,  Tateki Jozaki ,  Takeshi Chibahara ,  Jun Shiomi

IPC分类号： F16H9/00 ,  F16H59/72 ,  F16H61/02 ,  F16H61/662 ,  B60K41/12

CPC分类号： F16H61/66254 ,  F16H59/72 ,  Y10T477/619 ,  Y10T477/6242

摘要： A control device for controlling a continuously variable transmission (5) is disclosed. The control device has an oil pressure control unit (100) which supplies an oil pressure to a primary pulley (10) and secondary pulley (11) based on a command signal indicative of a target speed-reduction ratio, a sensor (26) which detects a rotation speed (Np1) of the primary pulley (26), and a controller (20) which transmits the command signal indicative of the target speed-reduction ratio to the oil pressure control unit (100). The controller is programmed to set the target speed-reduction ratio to a first speed-reduction ratio (R1); calculate a first predetermined rotation speed (N1) of the primary pulley at which the V-belt reaches a first limiting temperature (T1) at the first speed-reduction ratio (R1); calculate a first elapsed time after the detected rotation speed (Np1) of the primary pulley exceeds the first predetermined rotation speed (N1); maintain the first speed-reduction ratio (R1) when the first elapsed time is equal to or less than a first predetermined time; and set the target speed-reduction ratio to a second speed-reduction ratio (R2) smaller than the first speed-reduction ratio (R1) when the first elapsed time exceeds the first predetermined time. At the second speed-reduction ratio (R2), the temperature of the V-belt should become equal to or less than the first limiting temperature (T1) throughout the permitted rotation speed region of the primary pulley. Thus, starting acceleration performance of the continuously variable transmission is enhanced.

摘要翻译： 公开了一种用于控制无级变速器（5）的控制装置。 控制装置具有油压控制单元（100），其基于表示目标减速比的指令信号向主滑轮（10）和次滑轮（11）供给油压;传感器（26），其 检测主滑轮（26）的转速（Np1），以及向油压控制单元（100）发送表示目标减速比的指令信号的控制器（20）。 控制器被编程为将目标减速比设置为第一减速比（R1）; 以所述第一减速比（R1）计算所述V型带达到第一极限温度（T1）的所述主带轮的第一预定转速（N1）; 计算出初级带轮的检测转速（Np1）超过第一预定转速（N1）之后的第一经过时间; 当第一经过时间等于或小于第一预定时间时，保持第一减速比（R1）; 并且当所述第一经过时间超过所述第一预定时间时，将所述目标减速比设定为小于所述第一减速比（R1）的第二减速比（R2）。 在第二减速比（R2）下，V带的温度在初级带轮的整个允许转速区域内应变得等于或小于第一极限温度（T1）。 因此，提高了无级变速器的起动加速性能。