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    SEMICONDUCTOR LIGHT EMITTING DEVICE
    42.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号：US20120132943A1

    公开(公告)日：2012-05-31

    申请号：US13204013

    申请日：2011-08-05

    申请人： Toshiki HIKOSAKA ,  Hajime Nago ,  Koichi Tachibana ,  Toshihide Ito ,  Shinya Nunoue

    发明人： Toshiki HIKOSAKA ,  Hajime Nago ,  Koichi Tachibana ,  Toshihide Ito ,  Shinya Nunoue

    IPC分类号： H01L33/58

    CPC分类号： H01L33/22 ,  H01L33/325 ,  H01L33/40

    摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, an electrode, a p-type semiconductor layer and a light emitting layer. The p-type semiconductor layer is provided between the n-type semiconductor layer and the electrode and includes a p-side contact layer contacting the electrode. The light emitting layer is provided between the n-type and the p-type semiconductor layers. The p-side contact layer includes a flat part having a plane perpendicular to a first direction from the n-type semiconductor layer toward the p-type semiconductor layer and multiple protruding parts protruding from the flat part toward the electrode. A height of the multiple protruding parts along the first direction is smaller than one-fourth of a dominant wavelength of light emitted from the light emitting layer. A density of the multiple protruding parts in the plane is 5×107/cm2 or more and 2×108/cm2 or less.

    摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，电极，p型半导体层和发光层。 p型半导体层设置在n型半导体层和电极之间，并且包括与电极接触的p侧接触层。 发光层设置在n型和p型半导体层之间。 p侧接触层包括具有垂直于从n型半导体层朝向p型半导体层的第一方向的平面的平坦部分和从平坦部分向电极突出的多个突出部分。 沿着第一方向的多个突出部分的高度小于从发光层发射的光的主波长的四分之一。 平面内的多个突出部的密度为5×10 7 / cm 2以上2×10 8 / cm 2以下。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
    43.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 失效
    半导体发光器件及其制造方法

    公开(公告)号：US20120056157A1

    公开(公告)日：2012-03-08

    申请号：US13222500

    申请日：2011-08-31

    申请人： Toshiki Hikosaka ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

    发明人： Toshiki Hikosaka ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

    IPC分类号： H01L33/04

    CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/0075 ,  H01L33/32 ,  H01S5/305 ,  H01S5/3407 ,  H01S5/34333

    摘要： According to one embodiment, a semiconductor light emitting device includes an n-type layer, a p-type layer, and a light emitting unit provided between the n-type layer and the p-type layer and including barrier layers and well layers. At least one of the barrier layers includes first and second portion layers. The first portion layer is disposed on a side of the n-type layer. The second portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the first portion layer. At least one of the well layers includes third and fourth portion layers. The third portion layer is disposed on a side of the n-type layer. The fourth portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the third portion layer.

    摘要翻译： 根据一个实施例，半导体发光器件包括n型层，p型层和设置在n型层和p型层之间并包括势垒层和阱层的发光单元。 阻挡层中的至少一个包括第一和第二部分层。 第一部分层设置在n型层的一侧。 第二部分层设置在p型层的一侧，并且包含浓度高于第一部分层中的n型杂质。 阱层中的至少一个包括第三和第四部分层。 第三部分层设置在n型层的一侧。 第四部分层设置在p型层的一侧，并且包含浓度高于第三部分层的n型杂质。

    Semiconductor device
    46.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US07683390B2

    公开(公告)日：2010-03-23

    申请号：US12036409

    申请日：2008-02-25

    申请人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

    发明人： Koichi Tachibana ,  Chie Hongo ,  Hajime Nago ,  Shinya Nunoue

    IPC分类号： H01L29/22

    CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

    摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

    摘要翻译： 半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出， 第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层 其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。

    SEMICONDUCTOR LIGHT EMITTING ELEMENT
    48.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING ELEMENT 失效
    半导体发光元件

    公开(公告)号：US20080179623A1

    公开(公告)日：2008-07-31

    申请号：US11850404

    申请日：2007-09-05

    申请人： Koichi TACHIBANA ,  Hajime Nago ,  Shinji Saito ,  Shinya Nunoue ,  Genichi Hatakoshi

    发明人： Koichi TACHIBANA ,  Hajime Nago ,  Shinji Saito ,  Shinya Nunoue ,  Genichi Hatakoshi

    IPC分类号： H01L29/24

    CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/16

    摘要： A semiconductor light emitting element includes: an {0001} n-type semiconductor substrate formed of a III-V semiconductor, which is in a range of 0° to 45° in inclination angle into a direction, and which is in a range of 0° to 10° in inclination angle into a direction; an n-type layer formed of a III-V semiconductor on the n-type semiconductor substrate; an n-type guide layer formed of a III-V semiconductor above the n-type layer; an active layer formed of a III-V semiconductor above the n-type guide layer; a p-type first guide layer formed of a III-V semiconductor above the active layer; a p-type contact layer formed of a III-V semiconductor above the p-type first guide layer; and an concavo-convex layer formed of a III-V semiconductor between the p-type first guide layer and the p-type contact layer. The concavo-convex layer has concave portions and convex portions which are alternately and regularly arranged at a top face thereof, and has lower p-type impurity concentration than that of the p-type contact layer.

    摘要翻译： 半导体发光元件包括：由III-V族半导体形成的{0001} n型半导体衬底，其倾斜角度在0°至45°的范围内，并且其为 在倾斜角度为0°至10°的范围内成为<11-20>方向; 在n型半导体衬底上由III-V半导体形成的n型层; 由n型层上方的III-V族半导体形成的n型引导层; 由n型引导层上方的III-V族半导体形成的有源层; 由有源层上方的III-V族半导体形成的p型第一引导层; p型接触层，其由p型第一引导层上方的III-V族半导体形成; 以及在p型第一引导层和p型接触层之间由III-V族半导体形成的凹凸层。 该凹凸层具有在顶面交替规则地配置的凹部和凸部，并且p型杂质浓度比p型接触层低。

    Semiconductor light emitting device
    49.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US08643044B2

    公开(公告)日：2014-02-04

    申请号：US13222912

    申请日：2011-08-31

    申请人： Koichi Tachibana ,  Shigeya Kimura ,  Toshiki Hikosaka ,  Taisuke Sato ,  Toshiyuki Oka ,  Shinya Nunoue

    发明人： Koichi Tachibana ,  Shigeya Kimura ,  Toshiki Hikosaka ,  Taisuke Sato ,  Toshiyuki Oka ,  Shinya Nunoue

    IPC分类号： H01L33/00

    CPC分类号： H01L33/42

    摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structure body, first and second electrodes, and a pad layer. The body includes first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of second conductivity type. The first semiconductor layer has first and second portions. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode is provided on the first portion. The second electrode is provided on the second semiconductor layer and is transmittable to light emitted from the light emitting layer. The pad layer is connected to the second electrode. A transmittance of the pad layer is lower than that of the second electrode. A sheet resistance of the second electrode increases continuously along a direction from the pad layer toward the first electrode.

    摘要翻译： 根据一个实施例，半导体发光器件包括：堆叠结构体，第一和第二电极以及衬垫层。 主体包括第一导电类型的第一半导体层，发光层和第二导电类型的第二半导体层。 第一半导体层具有第一和第二部分。 发光层设置在第二部分上。 第二半导体层设置在发光层上。 第一电极设置在第一部分上。 第二电极设置在第二半导体层上，并且可透射到从发光层发射的光。 焊盘层连接到第二电极。 焊盘层的透射率低于第二电极的透射率。 第二电极的薄层电阻沿着从衬垫层向第一电极的方向连续地增加。

    Semiconductor light emitting device
    50.
    发明授权
    Semiconductor light emitting device 失效
    半导体发光器件

    公开(公告)号：US08436395B2

    公开(公告)日：2013-05-07

    申请号：US13405961

    申请日：2012-02-27

    申请人： Takahiro Sato ,  Shigeya Kimura ,  Taisuke Sato ,  Toshihide Ito ,  Koichi Tachibana ,  Shinya Nunoue

    发明人： Takahiro Sato ,  Shigeya Kimura ,  Taisuke Sato ,  Toshihide Ito ,  Koichi Tachibana ,  Shinya Nunoue

    IPC分类号： H01L33/36

    CPC分类号： H01L33/24 ,  H01L33/382 ,  H01L33/42

    摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure unit, a transparent, p-side and n-side electrodes. The unit includes n-type semiconductor layer, a light emitting portion provided on a part of the n-type semiconductor layer and p-type semiconductor layer provided on the light emitting portion. The transparent electrode is provided on the p-type semiconductor layer. The p-side electrode is provided on the transparent electrode. The n-side electrode is provided on the n-type semiconductor layer. The transparent electrode has a hole provided between the n-side and p-side electrodes. A width of the hole along an axis perpendicular to an axis from the p-side electrode toward the n-side electrode is longer than widths of the n-side and p-side electrodes. A distance between the hole and the n-side electrode is not longer than a distance between the hole and the p-side electrode.

    摘要翻译： 根据一个实施例，半导体发光器件包括堆叠结构单元，透明的p侧和n侧电极。 该单元包括n型半导体层，设置在n型半导体层的一部分上的发光部分和设置在发光部分上的p型半导体层。 透明电极设置在p型半导体层上。 p侧电极设置在透明电极上。 n侧电极设置在n型半导体层上。 透明电极具有设置在n侧和p侧电极之间的孔。 沿着与p侧电极朝向n侧电极的轴垂直的轴的孔的宽度比n侧电极和p侧电极的宽度长。 孔和n侧电极之间的距离不大于孔和p侧电极之间的距离。