公开(公告)号：US5807932A

公开(公告)日：1998-09-15

申请号：US817081

申请日：1997-04-09

申请人： Rudolf Pfaendner ,  Kurt Hoffmann ,  Heinz Herbst

发明人： Rudolf Pfaendner ,  Kurt Hoffmann ,  Heinz Herbst

IPC分类号： C08J11/04 ,  C08G59/18 ,  C08G63/80 ,  C08G63/91 ,  C08G64/20 ,  C08G64/40 ,  C08G64/42 ,  C08G69/06 ,  C08G69/48 ,  C08G85/00 ,  C08K5/5313 ,  C08K5/5333

CPC分类号： C08K5/5313 ,  C08G63/80 ,  C08G64/20 ,  C08G64/40 ,  C08G69/06 ,  C08G69/48 ,  C08K5/5333

摘要： The invention relates to a process for increasing the molecular weight of polycondensates, which comprises heating a polycondensate in the temperature range below the melting point and above the glass transition temperature in the solid phase of the polymer with additionof at least one sterically hindered hydroxyphenylalkylphosphonic ester or monoester.

摘要翻译： PCT No.PCT / EP95 / 03937第 371日期1997年04月9日 102（e）日期1997年4月9日PCT提交1995年10月5日PCT公布。 公开号WO96 / 11978 日期1996年04月25日本发明涉及一种提高缩聚物分子量的方法，该方法包括在聚合物固相中在低于熔点和高于玻璃化转变温度的温度范围内加热缩聚物，加入至少一种 空间位阻羟基苯基烷基膦酸酯或单酯。

公开(公告)号：US4454431A

公开(公告)日：1984-06-12

申请号：US240197

申请日：1981-03-03

申请人： Kurt Hoffmann ,  Dieter Kantz

发明人： Kurt Hoffmann ,  Dieter Kantz

IPC分类号： G11C11/407 ,  G05F3/20 ,  G11C11/34 ,  H01L21/822 ,  H01L27/04 ,  H01L27/10 ,  H03K17/22 ,  H03K17/06 ,  H03K17/10

CPC分类号： G05F3/205

摘要： A semiconductor circuit assembly having capacitively controlled field effect transistors, includes a semiconductor chip containing a digital circuit part for supplying timing pulses for controlling operation of the digital circuit part, and terminal having at least one conductive connection to the digital circuit part and the timing pulse generator for supplying potentials thereto from a direct current source. An oscillator is provided and a substrate-bias generator connected to the oscillator and the timing pulse generator. The substrate-bias generator is controlled by the oscillator for producing a bias voltage able to reach a given full value and for activating the timing pulse generator only after the substrate bias voltage has reached its full value.

摘要翻译： 具有电容控制的场效应晶体管的半导体电路组件包括：半导体芯片，其包含用于提供用于控制数字电路部分的操作的定时脉冲的数字电路部分，以及具有至少一个与数字电路部分的导通连接的定时脉冲和定时脉冲 发电机，用于从直流电源向其提供电位。 提供一个振荡器，一个连接到振荡器和定时脉冲发生器的衬底偏置发生器。 衬底偏置发生器由振荡器控制，用于产生能够达到给定全值的偏置电压，并且仅在衬底偏置电压达到其全部值之后激活定时脉冲发生器。

公开(公告)号：US4242600A

公开(公告)日：1980-12-30

申请号：US897939

申请日：1978-04-19

申请人： Kurt Hoffmann ,  Manfred Mauthe

发明人： Kurt Hoffmann ,  Manfred Mauthe

IPC分类号： G11C27/04 ,  G11C19/28 ,  H01L29/768 ,  H03H11/26 ,  H01L29/78

CPC分类号： H01L29/76816 ,  G11C19/285 ,  H01L29/76825

摘要： A digital CCD arrangement is provided in which an output signal is emitted which is regenerated with respect to its voltage range, and is substantially insensitive to adverse influences. In this arrangement, the last shift electrode preceding the output end zone is coupled with respect to potential to a circuit point of a transistor stage, which point in the event of a quantity of charge carriers representing logic level "1," the output end zone experiences a change in potential which corresponds to the change in potential beneath the other shift electrodes. Between the last preceding shift electrode and the output end zone, there is arranged a further electrode which is insulated from the semiconductor layer and is connected to a second reference potential which corresponds to an intermediate value which is swept over by the potential across the circuit point.

摘要翻译： 提供了一种数字CCD装置，其中发射输出信号，其相对于其电压范围再生，并且对不利影响基本上不敏感。 在这种布置中，输出端区之前的最后一个移位电极相对于晶体管级的电路点的电位而耦合，这表示在表示逻辑电平“1”的电荷载流量的情况下，输出端区 经历与其他换挡电极下方的电位变化相对应的电位变化。 在最后的前一移位电极和输出端区之间，布置另外的电极，该电极与半导体层绝缘并且连接到第二参考电位，该第二参考电位对应于跨越电路点的电势扫过的中间值 。

公开(公告)号：US4194283A

公开(公告)日：1980-03-25

申请号：US934263

申请日：1978-08-16

申请人： Kurt Hoffmann

发明人： Kurt Hoffmann

IPC分类号： H01L27/10 ,  H01L21/8242 ,  H01L23/522 ,  H01L27/108 ,  H01L29/08 ,  H01L29/423 ,  H01L21/22

CPC分类号： H01L29/0847 ,  H01L23/522 ,  H01L27/10823 ,  H01L29/4236 ,  H01L2924/0002 ,  Y10S438/901

摘要： In the production of V-MOS single transistor memory cells a simplification of the previous technology is disclosed wherein a process is utilized without epitaxial processes and with a minimum of doping processes. First the source and the drain zone of a field effect transistor forming a memory cell are produced and only then is a V-shaped recess formed at the site of these zones. In one embodiment, one re-doped zone is constructed as a flat zone and is produced on both sides adjacent to a second re-doped zone extending deeper into the silicon crystal. The V-shaped recess is then etched in such a way that the two zones are completely separated by the V-shaped recess. The silicon surface in the V-shaped recess is provided with a thin SiO.sub.2 layer and with a gate electrode covering it. Advantageously the gate electrodes of neighboring V-MOS cells are united into a line. This occurs with one of the two zones of the transistor, whereas the other zone remains separate.

摘要翻译： 在生产V-MOS单晶体管存储器单元中，公开了先前技术的简化，其中使用无外延工艺和最少掺杂工艺的工艺。 首先，形成形成存储单元的场效应晶体管的源极和漏极区域，然后仅形成在这些区域的位置处的V形凹部。 在一个实施例中，一个再掺杂区域被构造为平坦区域，并且在邻近于深入硅晶体的第二再掺杂区域的两侧上产生。 然后以这样的方式蚀刻V形凹部，使得两个区域被V形凹部完全分离。 V形凹部中的硅表面设置有薄SiO 2层，并且覆盖其上的栅极电极。 有利的是，相邻V-MOS电池的栅电极被联合成一行。 这发生在晶体管的两个区域之一，而另一个区域保持分离。

公开(公告)号：US4075515A

公开(公告)日：1978-02-21

申请号：US717690

申请日：1976-08-25

申请人： Kurt Hoffmann

发明人： Kurt Hoffmann

IPC分类号： G11C11/24 ,  G11C11/34 ,  G11C19/28 ,  G11C27/04 ,  H01L29/768 ,  H03F3/00 ,  H03H7/30 ,  H03H11/26 ,  H03K5/18 ,  H01L29/78 ,  H03K5/02

CPC分类号： H01L29/76825 ,  G11C11/24 ,  G11C11/34 ,  G11C19/28 ,  G11C27/04 ,  H03F3/005 ,  H03H7/30

摘要： Digital differential amplifier with pre-chargeable parasitic capacitances to switch on or hold blocked output transistors discharging or not discharging an output capacitance via a constant current sink for a combination of two charge coupled devices. The digital differential amplifier detects the presence or absence of charge on the output of a first charge coupled device and inputs a corresponding charge to a second charge coupled device. The combination of the two charge coupled devices with two digital differential amplifiers and two control transistors is such that stored charges may be recirculated between the two charge coupled devices or previously stored data may be serially read from the output of one charge coupled device and new data may be serially written into the input of the other charge coupled device. A method of recirculating previously stored data or writing new data into the second charge coupled device using precharged parasitic and diffusion zone capacitances is also described.

公开(公告)号：US20100315635A1

公开(公告)日：2010-12-16

申请号：US12667601

申请日：2008-07-04

申请人： Christoph Janzen ,  Reinhard Noll ,  Walter Uhl ,  Kurt Hoffmann

发明人： Christoph Janzen ,  Reinhard Noll ,  Walter Uhl ,  Kurt Hoffmann

IPC分类号： G01J3/28 ,  G01N21/47

CPC分类号： G01N21/474 ,  G01N2021/4759 ,  G02B21/02 ,  G02B21/06

摘要： The invention relates to a device for measuring scattered light, comprising at least one focusing element provided with electromagnetic radiation that can be focused on a sample, a detector and a detector optical system with which electromagnetic radiation scattered by the sample can be conducted to the detector. The device is characterized in that it comprises means for forming an annular beam such that said annular beam can be focused on a focus point inside the sample by the at least one focusing element and that electromagnetic radiation scattered by the sample can be detected by the detection optical system, said electromagnetic radiation dispersing inside the area surrounded by the annular beam.

摘要翻译： 本发明涉及一种用于测量散射光的装置，包括至少一个聚焦元件，该聚焦元件设置有可聚焦在样品上的电磁辐射，检测器和检测器光学系统，利用该光学系统可以将样品散射的电磁辐射传导到检测器 。 该装置的特征在于，它包括用于形成环形梁的装置，使得所述环形束可以通过至少一个聚焦元件聚焦在样品内的焦点上，并且可以通过检测来检测由样品散射的电磁辐射 光学系统，所述电磁辐射分散在由环形光束包围的区域内。

公开(公告)号：US07746683B2

公开(公告)日：2010-06-29

申请号：US11737236

申请日：2007-04-19

申请人： Kurt Hoffmann ,  Christine Dehm ,  Recai Sezi ,  Andreas Walter

发明人： Kurt Hoffmann ,  Christine Dehm ,  Recai Sezi ,  Andreas Walter

IPC分类号： G11C11/00

CPC分类号： G11C13/003 ,  B82Y10/00 ,  G11C13/0004 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/0019 ,  G11C2213/15 ,  G11C2213/75 ,  G11C2213/79

摘要： A memory arrangement includes: a first line for applying a reference voltage, a second line for applying an operating voltage, and a plurality of resistive memory elements, each element includes a resistive memory cell and a MOS memory cell selection transistor. A NOR memory arrangement is configured with each memory element including the resistive memory cell and selection transistor connected in series with the transistor connected to the first line, and the memory cell connected to the second line. A NAND memory arrangement is configured with a series of resistive memory elements forming a chain with each memory element including the resistive memory cell and selection transistor connected in parallel. The chain is connected to the first line disposed on a side of the memory cells facing the selection transistors and the second line disposed on a side of the memory cells which is remote from the selection transistors.

摘要翻译： 存储器装置包括：用于施加参考电压的第一线，用于施加工作电压的第二线和多个电阻性存储器元件，每个元件包括电阻存储器单元和MOS存储单元选择晶体管。 NOR存储器配置配置有每个存储器元件，其包括与连接到第一线路的晶体管串联连接的电阻存储器单元和选择晶体管，以及连接到第二线路的存储器单元。 NAND存储器配置配置有一系列形成链的电阻存储元件，每个存储元件包括并联连接的电阻存储单元和选择晶体管。 链条连接到布置在面向选择晶体管的存储单元的一侧上的第一行，而第二行设置在远离选择晶体管的存储单元的一侧。

公开(公告)号：US20080159932A1

公开(公告)日：2008-07-03

申请号：US12074741

申请日：2008-03-06

申请人： Kurt Hoffmann

发明人： Kurt Hoffmann

IPC分类号： B01D9/00

CPC分类号： C30B7/00 ,  C30B29/58

摘要： A method for the crystallization of macromolecules in a three-phase system using a vessel containing a lower aqueous phase, a middle phase and an upper hydrophobic phase having a lower density than that of the lower aqueous phase, wherein an aqueous solution of the macromolecules is added to the middle phase to form a fourth phase, followed by incubation.

摘要翻译： 一种使用含有下水相，中相和上疏水相的容器在三相体系中结晶大分子的方法，所述容器的密度低于下水相的密度，其中大分子的水溶液为 加入中期形成第四期，随后孵育。

公开(公告)号：US07375149B2

公开(公告)日：2008-05-20

申请号：US10526106

申请日：2003-09-02

申请人： Bruno Rotzinger ,  Kurt Hoffmann ,  Dietmar Mäder ,  Neil Dunski

发明人： Bruno Rotzinger ,  Kurt Hoffmann ,  Dietmar Mäder ,  Neil Dunski

IPC分类号： C08K5/15

CPC分类号： C08K5/005 ,  C08K5/0075 ,  C08K5/1545 ,  C08K5/17 ,  C08K5/20 ,  C08K5/32

摘要： The invention describes novel mixtures comprising i) a processing stabilizer selected from the group consisting of hydroxylamine stabilizers, nitrone stabilizers, benzofuran-2-one stabilizers and/or a compound of the formula I wherein R2 is C7-C30alkyl, R3 is C1-C30alkyl, and ii) an antistatic agent selected from the group consisting of an ethoxylated amine and/or an ethoxylated amide, as stabilizers for protecting organic materials, in particular synthetic polymers, against oxidative, thermal or lightinduced degradation

摘要翻译： 本发明描述了新的混合物，其包括i）选自羟胺稳定剂，硝酮稳定剂，苯并呋喃-2-酮稳定剂和/或式I化合物的加工稳定剂，其中R 2是C 其中R 3是C 1 -C 30烷基，R 3是C 1 -C 30烷基，R 3是C 1 -C 30烷基， ，和ii）选自乙氧基化胺和/或乙氧基化酰胺的抗静电剂作为用于保护有机材料，特别是合成聚合物的稳定剂，防止氧化，热或轻诱导的降解

公开(公告)号：US06610765B1

公开(公告)日：2003-08-26

申请号：US09869930

申请日：2001-07-09

申请人： Rudolf Pfaendner ,  Kurt Hoffmann ,  Felix Meyer ,  Bruno Rotzinger

发明人： Rudolf Pfaendner ,  Kurt Hoffmann ,  Felix Meyer ,  Bruno Rotzinger

IPC分类号： C08K534

CPC分类号： C08L23/04 ,  C08L33/00 ,  C08L83/04 ,  C08L101/00 ,  C08L2666/04 ,  C08L83/00

摘要： The dispersion of additives selected from the group consisting of stabilizers, antistatic agents, nucleating agents, biocides and/or flame retardants in synthetic polymers is improved by the addition of at least one polymeric dispersing or solvating agent having amphiphilic properties. Synthetic polymers stabilized in this manner are distinguished by having excellent stability against oxidative, thermal or light-induced degradation.

摘要翻译： 通过添加至少一种具有两亲性质的聚合物分散剂或溶剂化剂，可以改善在合成聚合物中选自稳定剂，抗静电剂，成核剂，杀生物剂和/或阻燃剂的添加剂的分散体。 以这种方式稳定的合成聚合物的特征在于对氧化，热或光诱导的降解具有优异的稳定性。