公开(公告)号：US20080217164A1

公开(公告)日：2008-09-11

申请号：US10585739

申请日：2005-03-24

申请人： Yasushi Toma ,  Takayuki Saito ,  Kazuto Hirokawa

发明人： Yasushi Toma ,  Takayuki Saito ,  Kazuto Hirokawa

IPC分类号： C25D17/00

CPC分类号： C25F7/00 ,  B23H5/08 ,  H01L21/32125

摘要： An electrolytic processing apparatus (50) has feed electrodes (74) to feed a current to a substrate (W), an ion exchanger (76) brought into contact with the substrate (W), and process electrodes (72) to perform an electrolytic process on the substrate (W). The electrolytic processing apparatus (50) has an electrolytic processing liquid source to supply an electrolytic processing liquid between the substrate (W) and the ion exchanger (76), and a regeneration liquid supply source to supply a regeneration liquid to a regeneration liquid chambers (90a, 90b). The electrolytic processing apparatus (50) includes regeneration electrodes (84) spaced from the process electrodes (72). The feed electrode (74) has a potential higher than the process electrode (72) and the same polarity as the process electrode (72). The process electrode (72) has a potential higher than the regeneration electrode (84).

摘要翻译： 电解处理装置（50）具有将电流供给到基板（W）的馈电电极（74），与基板（W）接触的离子交换器（76），以及处理电极（72），以进行电解 在基板上的工艺（W）。 电解处理装置（50）具有电解处理液源，在基板（W）和离子交换器（76）之间供给电解处理液，再生液供给源向再生液室供给再生液 90 a，90 b）。 电解处理装置（50）包括与处理电极（72）间隔开的再生电极（84）。 馈电电极（74）的电位高于处理电极（72）并具有与处理电极（72）相同的极性。 处理电极（72）的电位高于再生电极（84）。

公开(公告)号：US20060234503A1

公开(公告)日：2006-10-19

申请号：US10564980

申请日：2004-07-28

申请人： Kaoru Yamada ,  Takayuki Saito ,  Sumio Yabe ,  Kenya Ito ,  Masayuki Kamezawa ,  Masaya Seki ,  Ichiro Katakabe ,  Yuki Inoue

发明人： Kaoru Yamada ,  Takayuki Saito ,  Sumio Yabe ,  Kenya Ito ,  Masayuki Kamezawa ,  Masaya Seki ,  Ichiro Katakabe ,  Yuki Inoue

IPC分类号： H01L21/44 ,  B65G47/91

CPC分类号： H01L21/02052 ,  B08B1/04 ,  B08B3/02 ,  B08B2203/0229 ,  B08B2203/0288 ,  C23C18/1628 ,  C25D17/001 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051

摘要： The present invention relates to a substrate processing apparatus and a substrate processing method for performing a chemical liquid process, a cleaning process, a drying process, or the like while rotating a substrate such as a semiconductor wafer or a liquid crystal substrate. The present invention also relates to a substrate holding apparatus for holding and rotating a substrate. The substrate processing apparatus (1) for processing a substrate (W) while supplying a fluid to the substrate (W) includes a substrate holder (11) for holding and rotating the substrate (W), and a holder suction unit (24) for sucking the fluid from the substrate holder (11). The substrate holding apparatus includes a plurality of rollers (20) which are brought into contact with an edge portion of a substrate (W) so as to hold and rotate the substrate (W), and at least one moving mechanism (303a) for moving the rollers (20).

摘要翻译： 本发明涉及在旋转诸如半导体晶片或液晶基板的基板的同时进行化学液体处理，清洁处理，干燥处理等的基板处理装置和基板处理方法。 本发明还涉及用于保持和旋转衬底的衬底保持装置。 另外，在向基板（W）供给流体的同时，对基板（W）进行处理的基板处理装置（1）具备用于保持和旋转基板（W）的基板支架（11），以及用于 从基板支架（11）吸入流体。 基板保持装置包括与基板（W）的边缘部分接触以便​​保持和旋转基板（W）的多个辊（20），以及至少一个移动机构（303a），用于 移动辊子（20）。

公开(公告)号：US20060088792A1

公开(公告)日：2006-04-27

申请号：US11255877

申请日：2005-10-24

申请人： Takeo Ishibashi ,  Takayuki Saito ,  Maya Itoh ,  Shuji Nakao

发明人： Takeo Ishibashi ,  Takayuki Saito ,  Maya Itoh ,  Shuji Nakao

IPC分类号： G03F7/00

CPC分类号： G03F7/70466 ,  G03F1/00

摘要： First, a first exposure process is performed using dipole illumination with only a grating-pattern forming region as a substantial object to be exposed. Next, a second exposure process is performed with only a standard-pattern forming region as a substantial object to be exposed. A development process is then performed to obtain a resist pattern. A mask for the first exposure process is such that a light blocking pattern is formed on the whole surface of a standard-pattern mask part corresponding to the standard-pattern forming region. A mask for the second exposure is such that a light blocking pattern is formed on the whole surface of a grating-pattern mask part corresponding to the grating-pattern forming region.

摘要翻译： 首先，使用仅具有光栅图案形成区域的偶极照明作为要暴露的实质对象来执行第一曝光处理。 接下来，仅以标准图案形成区域作为要曝光的实质物体进行第二曝光处理。 然后进行显影处理以获得抗蚀剂图案。 用于第一曝光处理的掩模使得在对应于标准图案形成区域的标准图案掩模部件的整个表面上形成遮光图案。 用于第二曝光的掩模使得在对应于光栅图案形成区域的光栅图案掩模部分的整个表面上形成遮光图案。

公开(公告)号：US20060088452A1

公开(公告)日：2006-04-27

申请号：US10541153

申请日：2004-01-29

申请人： Hajime Okura ,  Toshio Katsube ,  Takayuki Saito

发明人： Hajime Okura ,  Toshio Katsube ,  Takayuki Saito

IPC分类号： B01D50/00 ,  B01D53/50

CPC分类号： F23J15/06 ,  F23J15/02 ,  F23J15/08 ,  Y02E20/363

摘要： In an exhaust gas processing device wherein in order to efficiently outwardly discharge heat at high temperatures of about 90-150° C. released from a GGH reheater during the shutdown of a desulfurizer, to prevent damage to equipment and corrosion preventive lining material, and to ensure long-term stabilized use of the exhaust gas processing device, at least a GGH heat recovery unit, an absorption tower, a mist eliminator (M/E), and the GGH reheater are placed in a duct for exhaust gases discharged from a fire furnace, in the order named as seen from the upstream side of a flow of exhaust gases, an exhaust gas duct between the M/E and the reheater is provided with a heat radiation device or the like having a heat suppression function for suppressing dissipated heat from the reheater.

摘要翻译： 在废气处理装置中，为了在脱硫器关闭期间从GGH再热器释放的约90-150℃的高温有效地向外排出热量，以防止对设备和防腐蚀衬里材料的损坏，以及 确保废气处理装置的长期稳定使用，至少将GGH热回收单元，吸收塔，除雾器（M / E）和GGH再热器放置在用于从火中排出的废气的管道中 炉子以从废气流的上游侧看的顺序，M / E和再热器之间的排气管道设置有具有用于抑制散热的热抑制功能的散热装置等 从再热器。

公开(公告)号：US20050092351A1

公开(公告)日：2005-05-05

申请号：US10695826

申请日：2003-10-30

申请人： Takayuki Saito ,  Tsukuru Suzuki ,  Kaoru Yamada ,  Kenya Ito ,  Masayuki Kamezawa ,  Kenji Yamaguchi

发明人： Takayuki Saito ,  Tsukuru Suzuki ,  Kaoru Yamada ,  Kenya Ito ,  Masayuki Kamezawa ,  Kenji Yamaguchi

IPC分类号： B08B3/02 ,  H01L21/00

CPC分类号： H01L21/6708 ,  B08B3/02 ,  Y10S134/902

摘要： The present invention provides a substrate processing apparatus and a substrate processing method suitable for use in an etching apparatus which etches a thin film formed on a peripheral portion of a substrate. The present invention also provides a substrate processing apparatus and a substrate processing method suitable for use in a cleaning apparatus which performs a cleaning process on a substrate which has been etched. The substrate processing apparatus for use in etching includes a substrate holder 11 for holding a substrate W substantially horizontally and rotating the substrate W, and a processing liquid supply unit 15 for supplying a processing liquid onto a peripheral portion of the substrate W which is being rotated in such a manner that the processing liquid is stationary with respect to the substrate W. The substrate processing apparatus for use in cleaning a substrate includes a substrate holder 54 for holding a substrate W substantially horizontally and rotating the substrate W, and a cleaning liquid supply unit 53 having a cleaning liquid outlet 53a which is oriented from a center of the substrate W toward a peripheral portion of the substrate W with an elevation angle of not more than 45° from a surface of the substrate W. The cleaning liquid supply unit 53 supplies a cleaning liquid to the surface of the substrate W at a flow velocity of not less than 0.1 m/s.

摘要翻译： 本发明提供一种适用于腐蚀形成在基板的周边部分上的薄膜的蚀刻装置中的基板处理装置和基板处理方法。 本发明还提供一种适用于在已被蚀刻的基板上进行清洗处理的清洗装置的基板处理装置和基板处理方法。 用于蚀刻的基板处理装置包括基板保持器11，用于基本上水平地保持基板W并旋转基板W;以及处理液体供应单元15，用于将处理液体供应到正在旋转的基板W的周边部分 处理液体相对于基板W是静止的。用于清洗基板的基板处理装置包括：基板保持件54，用于基本上水平地保持基板W并旋转基板W;以及清洗液供给部 单元53具有从基板W的中心朝向基板W的周边部分取向的清洗液出口53a，其与基板W的表面具有不大于45°的仰角。清洗液供给单元 53以不小于0.1m / s的流速向基板W的表面供给清洗液。

公开(公告)号：US06875335B2

公开(公告)日：2005-04-05

申请号：US10449515

申请日：2003-06-02

申请人： Yuzo Mori ,  Mitsuhiko Shirakashi ,  Takayuki Saito ,  Yasushi Toma ,  Akira Fukunaga ,  Itsuki Kobata

发明人： Yuzo Mori ,  Mitsuhiko Shirakashi ,  Takayuki Saito ,  Yasushi Toma ,  Akira Fukunaga ,  Itsuki Kobata

IPC分类号： B23H3/08 ,  C25D11/02 ,  C25F3/00 ,  B23H3/00 ,  C25B9/00 ,  C25B13/00 ,  C25B15/00 ,  C25D17/00

CPC分类号： C25F3/00 ,  B23H3/08

摘要： An anode as a workpiece, and a cathode opposed to the anode with a predetermined spacing are placed in ultrapure water. A catalytic material promoting dissociation of the ultrapure water and having water permeability is disposed between the workpiece and the cathode. A flow of the ultrapure water is formed inside the catalytic material, with a voltage being applied between the workpiece and the cathode, to decompose water molecules in the ultrapure water into hydrogen ions and hydroxide ions, and supply the resulting hydroxide ions to a surface of the workpiece, thereby performing removal processing of or oxide film formation on the workpiece through a chemical dissolution reaction or an oxidation reaction mediated by the hydroxide ions. Thus, clean processing can be performed by use of hydroxide ions in ultrapure water, with no impurities left behind on the processed surface of the workpiece.

摘要翻译： 将作为工件的阳极和与阳极相对的具有预定间隔的阴极置于超纯水中。 在工件和阴极之间设置促进超纯水的离解并具有透水性的催化材料。 在催化材料内部形成超纯水流，在工件和阴极之间施加电压，将超纯水中的水分子分解为氢离子和氢氧根离子，并将得到的氢氧根离子供给到 从而通过化学溶解反应或由氢氧根离子介导的氧化反应来进行工件的去除处理或氧化膜形成。 因此，可以通过在超纯水中使用氢氧根离子进行清洁处理，在工件的加工表面上不会留下杂质。

公开(公告)号：US06254667B1

公开(公告)日：2001-07-03

申请号：US09385892

申请日：1999-08-30

申请人： Takayuki Saito ,  Takeo Kajishima ,  Katsumi Tsuchiya

发明人： Takayuki Saito ,  Takeo Kajishima ,  Katsumi Tsuchiya

IPC分类号： B01D1900

CPC分类号： B01D53/1475 ,  B01F3/04099 ,  B01F3/0451 ,  B01F3/0876 ,  B01F5/0495 ,  B01F2003/04893 ,  Y02C10/06 ,  Y02E20/326 ,  Y10S261/07

摘要： The apparatus of the present invention includes an inverted J-shaped pipe disposed under the sea and including shorter and longer open end portions, and a connecting portion joining them such that the shorter and longer portions extend downward from connecting portion to their respective open ends. An injector nut injecting the carbon dioxide-containing gas into a portion of said short pipe adjacent to said first open end into said shorter pipe. An accumulator is in fluid communication with the connecting portion for collecting gas, which remains undissolved in the seawater during the passage of the carbon dioxide-containing gas through said shorter pipe. According to the method of the invention, the injection of the carbon dioxide-containing gas forces the seawater to enter into first open end, to flow upward together with the carbon dioxide-containing gas through the shorter pipe portion, to flow downward through the longer pipe portion and to be discharged from the second open end, with the carbon dioxide being dissolved in the seawater during the passage of the carbon dioxide-containing gas through the shorter pipe portion, so that the seawater discharged from the second open end contains carbon dioxide dissolved therein.

摘要翻译： 本发明的装置包括一个倒置的J型管，其设置在海底下方并且包括较短和较长的开口端部，以及连接部分，使得较短和较长部分从连接部分向​​下延伸到其各自的开口端。 喷射器螺母将含二氧化碳的气体注入到与所述第一开口端相邻的所述短管的一部分进入所述较短管中。 蓄能器与用于收集气体的连接部分流体连通，这些气体在含二氧化碳的气体通过所述较短的管道期间不溶于海水。 根据本发明的方法，注入含二氧化碳的气体迫使海水进入第一开口端，与含二氧化碳的气体一起通过较短的管道部分向上流动，向下流过较长的管道 管部分并从第二开放端排出，在二氧化碳气体通过较短的管部分期间，二氧化碳溶解在海水中，使得从第二开放端排出的海水含有二氧化碳 溶解在其中。

公开(公告)号：US5892291A

公开(公告)日：1999-04-06

申请号：US670313

申请日：1996-06-27

申请人： Koichiro Narimatsu ,  Shigenori Yamashita ,  Nobuyuki Yoshioka ,  Shinya Soeda ,  Atsushi Hachisuka ,  Koji Taniguchi ,  Yuki Miyamoto ,  Takayuki Saito ,  Ayumi Minamide

发明人： Koichiro Narimatsu ,  Shigenori Yamashita ,  Nobuyuki Yoshioka ,  Shinya Soeda ,  Atsushi Hachisuka ,  Koji Taniguchi ,  Yuki Miyamoto ,  Takayuki Saito ,  Ayumi Minamide

IPC分类号： G03F1/36 ,  G03F1/42 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H05K1/02 ,  H01L23/544

CPC分类号： G03F7/706 ,  G03F7/70633 ,  Y10T428/24802 ,  Y10T428/24917

摘要： The present invention includes a first semiconductor element forming member formed in a first layer, a first measurement mark formed by the same manufacturing step as the first semiconductor element forming member, a second semiconductor element forming member formed in a second layer above the first layer, and a second measurement mark formed in the same manufacturing step as the second semiconductor element forming member for measuring registration accuracy between the first and second semiconductor element forming members. The first measurement mark has a pattern which receives same influence of aberration as the first semiconductor element forming member when irradiated with light, and the second measurement mark has a pattern which receives same influence of aberration as the second semiconductor element forming member when irradiated with light. Thus, a registration accuracy measurement mark taking into consideration the influence of aberration can be provided.

摘要翻译： 本发明包括形成在第一层中的第一半导体元件形成元件，通过与第一半导体元件形成元件相同的制造步骤形成的第一测量标记，形成在第一层之上的第二层中的第二半导体元件形成元件， 以及在与第二半导体元件形成部件相同的制造步骤中形成的用于测量第一和第二半导体元件形成部件之间的配准精度的第二测量标记。 第一测量标记具有在照射光时受到与第一半导体元件形成部件相同的像差影响的图案，并且第二测量标记具有受光照射时受到与第二半导体元件形成部件相同的像差影响的图案 。 因此，可以提供考虑到像差影响的配准精度测量标记。

公开(公告)号：US5780735A

公开(公告)日：1998-07-14

申请号：US602163

申请日：1996-02-15

申请人： Takashi Kadohiro ,  Shinya Igarashi ,  Tadao Suzuki ,  Mamoru Tsumagari ,  Takayuki Saito

发明人： Takashi Kadohiro ,  Shinya Igarashi ,  Tadao Suzuki ,  Mamoru Tsumagari ,  Takayuki Saito

IPC分类号： F02D35/00 ,  G01F1/68 ,  G01F1/684 ,  G01F1/696

CPC分类号： G01F1/68

摘要： Disclosed is an air flow rate measurement apparatus comprising a heating resistor and a temperature sensing resistor for detecting an intake-air flow rate to be sucked into an internal combustion engine, and a circuit module for outputting an electric signal corresponding to said intake air flow rate, said module being electrically connected to said heating resistor and said temperature sensing resistor. The apparatus is featured in that said heating resistor and said temperature sensing resistor are inserted together with an element for measuring an intake air temperature through an opening formed in the wall of an air passage so that said three elements are located in said air passage and the module is fixed to the air passage. The apparatus is of low cost and small sized.

摘要翻译： 公开了一种空气流量测量装置，包括：加热电阻器和用于检测要吸入内燃机的进气流量的温度检测电阻器;以及电路模块，用于输出对应于所述进气流量的电信号 所述模块电连接到所述加热电阻器和所述温度感测电阻器。 该装置的特征在于，所述加热电阻器和所述温度感测电阻器通过形成在空气通道的壁中的开口用于测量进气温度的元件一起插入，使得所述三个元件位于所述空气通道中，并且 模块固定在空气通道上。 该设备成本低，体积小。

公开(公告)号：US5614088A

公开(公告)日：1997-03-25

申请号：US664312

申请日：1996-06-11

申请人： Hiroshi Nagai ,  Yukio Ikeda ,  Takayuki Saito

发明人： Hiroshi Nagai ,  Yukio Ikeda ,  Takayuki Saito

IPC分类号： C02F1/00 ,  B01D19/00 ,  C02F1/20 ,  C02F1/28 ,  C02F1/32 ,  C02F1/42 ,  C02F1/44 ,  C02F1/70 ,  C02F9/00

CPC分类号： C02F9/00 ,  B01D19/0031 ,  C02F1/20 ,  C02F1/283 ,  C02F1/32 ,  C02F1/42 ,  C02F1/441 ,  C02F1/444 ,  C02F2103/04 ,  C02F2201/3227

摘要： A cleaning water production system in which pure water from a primary pure water production system is treated in a subsystem to produce ultrapure water, which is then sent to points of use through supply pipes, the point of use being connected to the subsystem through return pipes for returning unused cleaning water to the subsystem, wherein an extra-ultrapure water production system is provided at a distal end portion of the supply pipes near the point of use for supplying extra-ultrapure water to the points of use.

摘要翻译： 一种清洁水生产系统，其中来自初级纯水生产系统的纯水在子系统中被处理以产生超纯水，然后通过供应管道被送到使用点，使用点通过回流管连接到子系统 用于将未使用的清洁水返回到子系统，其中超临界水生产系统设置在靠近使用点的供应管的远端部分，以将超纯水供应到使用点。