公开(公告)号：US07418772B2

公开(公告)日：2008-09-02

申请号：US11743793

申请日：2007-05-03

申请人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

发明人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

IPC分类号： H01L41/22 ,  H01L41/00

CPC分类号： H03H9/02929 ,  H03H3/10 ,  H03H9/02559 ,  H03H9/14538 ,  Y10T29/42 ,  Y10T29/49016 ,  Y10T29/4913 ,  Y10T29/49135 ,  Y10T29/49155

摘要： In a manufacturing method for a SAW apparatus a first insulating layer is formed on the entire surface of a piezoelectric LiTaO3 substrate. By using a resist pattern used for forming an IDT electrode, the first insulating layer in which the IDT electrode is to be formed is removed. An electrode film made of a metal having a density higher than Al or an alloy primarily including such a metal is disposed in the area in which the first insulating layer is removed so as to form the IDT electrode. The resist pattern remaining on the first insulating layer is removed. A second insulating layer is formed to cover the first insulating layer and the IDT electrode.

摘要翻译： 在SAW器件的制造方法中，在压电LiTaO 3衬底的整个表面上形成第一绝缘层。 通过使用用于形成IDT电极的抗蚀剂图案，去除其中将形成IDT电极的第一绝缘层。 在除去第一绝缘层的区域中设置由密度高于Al的金属或主要包含金属的合金制成的电极膜，以形成IDT电极。 去除残留在第一绝缘层上的抗蚀剂图案。 形成第二绝缘层以覆盖第一绝缘层和IDT电极。

公开(公告)号：US07322093B2

公开(公告)日：2008-01-29

申请号：US11535560

申请日：2006-09-27

申请人： Michio Kadota ,  Hajime Kando

发明人： Michio Kadota ,  Hajime Kando

IPC分类号： H04R31/00

CPC分类号： H03H9/0222 ,  H03H3/04 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/4908

摘要： In a method for producing a boundary acoustic wave device that includes a first medium, a second medium, and a third medium laminated in that order, and electrodes disposed at the interface between the first medium and the second medium, the method includes the steps of preparing a laminate including the first medium, the second medium, and the electrodes disposed at the interface between the first medium and the second medium, adjusting the thickness of the second medium after the step of preparing the laminate to regulate a frequency or the acoustic velocity of a surface acoustic wave, a pseudo-boundary acoustic wave, or a boundary acoustic wave, after the adjusting step, forming the third medium different from the second medium in terms of the acoustic velocity with which the boundary acoustic wave propagates therethrough and/or in terms of material.

摘要翻译： 在制造包括依次层叠的第一介质，第二介质和第三介质以及设置在第一介质和第二介质之间的接口的电极的弹性边界波装置的制造方法中，包括以下步骤： 制备包括第一介质，第二介质和设置在第一介质和第二介质之间的界面处的电极的层压体，在制备层压体的步骤之后调节第二介质的厚度以调节频率或声速 在调整步骤之后的声表面波，伪边界声波或声界面声波，形成与第二介质不同的第三介质，就声界面声波传播通过其的声速和/或 在材料方面。

公开(公告)号：US20070132338A1

公开(公告)日：2007-06-14

申请号：US11674816

申请日：2007-02-14

申请人： Takeshi Nakao ,  Masakazu Mimura ,  Michio Kadota

发明人： Takeshi Nakao ,  Masakazu Mimura ,  Michio Kadota

IPC分类号： H03H9/25

CPC分类号： H03H9/02559

摘要： In a surface acoustic wave device, electrode films constituting at least one IDT are disposed on a piezoelectric substrate, and an SiO2 film is arranged on the piezoelectric substrate so as to cover the electrode films. The film-thickness of the electrode films is in the range of about 1% to about 3% of the wavelength of an excited surface acoustic wave.

摘要翻译： 在表面声波装置中，构成至少一个IDT的电极膜设置在压电基板上，并且在压电基板上设置SiO 2膜以覆盖电极膜。 电极膜的膜厚度在激发的表面声波的波长的约1％至约3％的范围内。

公开(公告)号：US07212080B2

公开(公告)日：2007-05-01

申请号：US11531003

申请日：2006-09-12

申请人： Masakazu Mimura ,  Tomohisa Komura ,  Norio Taniguchi ,  Takeshi Nakao ,  Michio Kadota

发明人： Masakazu Mimura ,  Tomohisa Komura ,  Norio Taniguchi ,  Takeshi Nakao ,  Michio Kadota

IPC分类号： H03H9/72 ,  H03H9/64

CPC分类号： H03H9/02559 ,  H03H9/6433 ,  H03H9/6466 ,  H03H9/725

摘要： A surface acoustic wave branching filter includes a first filter and a second filter each including a plurality of surface acoustic wave resonators arranged in a ladder circuit configuration. The first filter in which the frequency range of the passband is relatively low is provided on a first piezoelectric substrate, and the second filter in which the frequency range of the passband is relatively high is provided on a second piezoelectric substrate. The first piezoelectric substrate and the second piezoelectric substrate are rotation Y-cut X-propagation LiTaO3 substrates, and the cut angle of the first piezoelectric substrate is greater than the cut angle of the second piezoelectric substrate.

摘要翻译： 表面声波分波器包括第一滤波器和第二滤波器，每个滤波器包括以梯形电路配置布置的多个表面声波谐振器。 在第一压电基板上设置有通带的频率范围相对较低的第一滤波器，在第二压电基板上设置通带频率相对较高的第二滤波器。 第一压电基板和第二压电基板是旋转Y切X传播LiTaO 3 3衬底，第一压电基片的切割角大于第二压电基片的切割角。

公开(公告)号：US07194793B2

公开(公告)日：2007-03-27

申请号：US10844940

申请日：2004-05-13

申请人： Michio Kadota ,  Yasunori Takakuwa ,  Seigo Hayashi ,  Junya Ago ,  Hideya Horiuchi ,  Mamoru Ikeura

发明人： Michio Kadota ,  Yasunori Takakuwa ,  Seigo Hayashi ,  Junya Ago ,  Hideya Horiuchi ,  Mamoru Ikeura

IPC分类号： H04R31/00

CPC分类号： H03H9/6483 ,  H03H9/02669 ,  H03H9/14552 ,  H03H9/6436 ,  H03H9/6463 ,  Y10T29/42 ,  Y10T29/49004 ,  Y10T29/49005 ,  Y10T29/49011 ,  Y10T29/4908 ,  Y10T29/49128 ,  Y10T29/4913

摘要： A method for adjusting a frequency characteristic of an edge reflection type surface acoustic wave device includes the step of obtaining a frequency characteristic of an edge reflection type surface acoustic wave device having a piezoelectric substrate. The edge reflection type surface acoustic wave device has a pair of edges of the piezoelectric substrate which define a predetermined distance therebetween. The piezoelectric substrate is cut at a position which defines a distance that is shorter than the predetermined distance when a final frequency characteristic of the edge reflection type surface acoustic wave device is to be higher than the obtained frequency characteristic. The piezoelectric substrate is cut at a position which defines a distance that is longer than the predetermined distance when a final frequency characteristic of the edge reflection type surface acoustic wave device is to be lower than the obtained frequency characteristic.

摘要翻译： 用于调整边缘反射型声表面波装置的频率特性的方法包括获得具有压电基片的边缘反射型声表面波装置的频率特性的步骤。 边缘反射型弹性表面波器件具有在其间限定预定距离的压电基片的一对边缘。 当边缘反射型弹性表面波器件的最终频率特性要比所获得的频率特性高时，将压电基片切割成限定比预定距离短的距离的位置。 当边缘反射型弹性表面波器件的最终频率特性要低于所获得的频率特性时，压电基片被切割在限定比预定距离长的距离的位置处。

公开(公告)号：US07109634B2

公开(公告)日：2006-09-19

申请号：US10734228

申请日：2003-12-15

申请人： Takeshi Nakao ,  Kenji Nishiyama ,  Tetsuya Kimura ,  Michio Kadota

发明人： Takeshi Nakao ,  Kenji Nishiyama ,  Tetsuya Kimura ,  Michio Kadota

IPC分类号： H03H9/25

CPC分类号： H03H9/02834 ,  H03H9/02677

摘要： A surface acoustic wave device with improved reflection characteristics, in which an insulating film is formed so as to cover an electrode film, and the electrode film is made from Al or an Al alloy, includes a piezoelectric substrate, an electrode film which is formed of Al or an alloy including Al as a major component on the piezoelectric substrate and which defines at least one interdigital transducer, and an insulating film arranged on the piezoelectric substrate so as to cover the electrode film, the average density of the electrode film is less than or equal to about 1.5 times the density of the insulating film, wherein the top surface of the insulating film is planarized.

摘要翻译： 具有改善的反射特性的表面声波器件，其中形成绝缘膜以覆盖电极膜，并且所述电极膜由Al或Al合金制成，包括压电基片，电极膜，由 Al或包含Al作为主要成分的合金，并且限定至少一个叉指换能器，以及布置在压电基板上以覆盖电极膜的绝缘膜，电极膜的平均密度小于 或等于绝缘膜密度的约1.5倍，其中绝缘膜的顶表面被平坦化。

公开(公告)号：US07009325B2

公开(公告)日：2006-03-07

申请号：US10731927

申请日：2003-12-10

申请人： Hajime Kando ,  Michio Kadota

发明人： Hajime Kando ,  Michio Kadota

IPC分类号： H01L41/08

CPC分类号： H03H9/25 ,  H03H9/02559

摘要： A surface acoustic wave device using second leaky surface acoustic waves the dominant component of which is a longitudinal wave component includes a LiTaO3 substrate and a conductive film formed on the LiTaO3 substrate. The density ρ of the conductive film is in the range of about 2,699 kg/m3 to about 19,300 kg/m3.

摘要翻译： 使用其主要成分为纵波分量的第二泄漏声表面波的声表面波器件包括LiTaO 3 3衬底和形成在LiTaO 3衬底上的导电膜 。 导电膜的密度rho在约2699kg / m 3至约19,300kg / m 3的范围内。

公开(公告)号：US06879225B2

公开(公告)日：2005-04-12

申请号：US10610925

申请日：2003-07-01

申请人： Michio Kadota ,  Hideya Horiuchi ,  Takeshi Nakao ,  Yasuhiro Kuratani ,  Masakazu Mimura ,  Junya Ago

发明人： Michio Kadota ,  Hideya Horiuchi ,  Takeshi Nakao ,  Yasuhiro Kuratani ,  Masakazu Mimura ,  Junya Ago

IPC分类号： H03H9/145 ,  H03H3/10 ,  H03H9/02 ,  H03H9/25 ,  H03H9/64 ,  H03H9/15

CPC分类号： H03H9/6436 ,  H03H3/10 ,  H03H9/02559 ,  H03H9/02669 ,  H03H9/02834 ,  H03H9/02984 ,  H03H9/6433

摘要： A surface acoustic wave device includes a Y-cut, X-propagation LiTaO3 substrate, at least one interdigital transducer provided on the LiTaO3 substrate and made of Al or a metal containing Al as a major component, and an SiO2 film provided on the surface of the LiTaO3 substrate so as to cover the interdigital transducer, wherein the thickness Hs of the SiO2 film normalized by the wavelength λ of a surface acoustic wave and the cut angle θ of the LiTaO3 substrate are set to be in any one of the ranges represented by formulae (1) to (8): in the case of 0.00

摘要翻译： 表面声波装置包括Y切割的X传播LiTaO 3基板，设置在LiTaO 3基板上的由Al或含有Al作为主要成分的金属制成的至少一个叉指换能器，以及设置在 LiTaO 3衬底以覆盖叉指换能器，其中由表面声波的波长λ和LiTaO 3衬底的切割角度θ归一化的SiO 2膜的厚度Hs被设定为由 式（1）〜（8）：

公开(公告)号：US06663943B2

公开(公告)日：2003-12-16

申请号：US09884276

申请日：2001-06-19

申请人： Michio Kadota

发明人： Michio Kadota

IPC分类号： B32B300

CPC分类号： H03H9/1078 ,  B32B3/30 ,  H01L21/561 ,  H01L23/3135 ,  H01L24/97 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01051 ,  H01L2924/01055 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H03H9/0542 ,  H03H9/0585 ,  H03H9/059 ,  H03H9/1085 ,  Y10T428/1307 ,  Y10T428/24479 ,  Y10T428/24537 ,  Y10T428/24612 ,  Y10T428/24942 ,  Y10T428/24983 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A surface acoustic wave device includes a SAW element that is mounted on a substrate. Grooves are provided in the substrate at the outer periphery of the SAW element, and a flexible resin layer is provided at the inner portion of the grooves so as to cover the SAW element. An outer resin layer that is harder than the flexible resin layer is provided at the exterior of the flexible resin layer. This configuration facilitates reduction in size and profile of the surface acoustic wave device, contributes to reduction in cost, and exhibits high environmental resistance.

摘要翻译： 表面声波装置包括安装在基板上的SAW元件。 沟槽在SAW元件的外周设置在基板中，并且在凹槽的内部设置柔性树脂层以覆盖SAW元件。 在柔性树脂层的外部设置有比柔性树脂层更硬的外侧树脂层。 该构造有助于降低声表面波装置的尺寸和轮廓，有助于降低成本，并且表现出高的耐环境性。

公开(公告)号：US06625855B1

公开(公告)日：2003-09-30

申请号：US09678928

申请日：2000-10-04

申请人： Eiichi Takata ,  Yasuji Yamamoto ,  Toshimaro Yoneda ,  Michio Kadota

发明人： Eiichi Takata ,  Yasuji Yamamoto ,  Toshimaro Yoneda ,  Michio Kadota

IPC分类号： H04R1700

CPC分类号： H03H3/08 ,  Y10T29/42 ,  Y10T29/49005

摘要： A method for producing a surface acoustic wave device, includes the steps of preparing a piezoelectric substrate, forming a thin film electrode on the piezoelectric substrate, etching the thin film electrode for forming an IDT, trimming at least one of the piezoelectric substrate and the IDT to adjust an operation frequency of the surface acoustic wave device, and rapidly altering the surface of the IDT for stabilizing the surface of the IDT.

摘要翻译： 一种表面声波装置的制造方法，其特征在于，包括以下步骤：在压电基板上形成薄膜电极，蚀刻形成IDT的薄膜电极，修整压电基板和IDT中的至少一个 调整声表面波器件的工作频率，并快速地改变IDT的表面以稳定IDT的表面。