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    Liquid Precursor for Depositing Group 4 Metal Containing Films
    41.
    发明申请
    Liquid Precursor for Depositing Group 4 Metal Containing Films 有权
    用于沉积第4组含金属膜的液体前体

    公开(公告)号：US20110135838A1

    公开(公告)日：2011-06-09

    申请号：US12950352

    申请日：2010-11-19

    申请人： Xinjian Lei ,  John Anthony Thomas Norman ,  Daniel P. Spence

    发明人： Xinjian Lei ,  John Anthony Thomas Norman ,  Daniel P. Spence

    IPC分类号： C23C16/30 ,  C07F7/28 ,  C23C16/44 ,  C23C16/50 ,  C23C16/48 ,  C23C16/56

    CPC分类号： C07F17/00 ,  C07F7/003

    摘要： The present invention is related to a family of liquid group 4 precursors represented by the formula: (pyr*)M(OR1)(OR2)(OR3) wherein pyr* is an alkyl substituted pyrrolyl, wherein M is group 4 metals include Ti, Zr, and Hf; wherein R1-3 can be same or different and selected from group consisting of linear or branched C1-6 alkyls; preferably C1-3 alkyls; R4 is selected from the group consisting of C1-6 alkyls, preferably branched C3-5 alkyls substituted at 2, 5 positions to prevent the pyrrolyl coordinated to the metal center in η1 fashion; n=2, 3, 4. Most preferably the invention is directed to (2,5-di-tert-butylpyrrolyl)(tris(ethoxy)titanium, (2,5-di-tert-amylpyrrolyl)(tris(ethoxy)titanium, and (2,5-di-tert-amylpyrrolyl)(tris(iso-propoxy)titanium. The invention is also directed to (cyclopentadienyl)(2,5-di-methylpyrrolyl)(bis(ethoxy))titanium. Deposition methods using these compounds are also contemplated.

    摘要翻译： 本发明涉及一种由式（pyr *）M（OR1）（OR2）（OR3）表示的液体组4前体，其中pyr *是烷基取代的吡咯基，其中M是第4族金属包括Ti， Zr和Hf; 其中R1-3可以相同或不同，并且选自直链或支链C 1-6烷基; 优选C 1-3烷基; R 4选自C 1-6烷基，优选在2,5位取代的支链C 3-5烷基，以防止以“1”方式与金属中心配位的吡咯基; 最优选本发明涉及（2,5-二叔丁基吡咯基）（三（乙氧基）钛，（2,5-二叔戊基吡咯基）（三（乙氧基）钛 本发明还涉及（环戊二烯基）（2,5-二甲基吡咯基）（双（乙氧基））钛。沉积方法 也考虑使用这些化合物。

    Ti, Ta, Hf, Zr and related metal silicon amides for ALD/CVD of metal-silicon nitrides, oxides or oxynitrides
    42.
    发明授权
    Ti, Ta, Hf, Zr and related metal silicon amides for ALD/CVD of metal-silicon nitrides, oxides or oxynitrides 有权
    Ti，Ta，Hf，Zr和金属硅氮化物的ALD / CVD的相关金属硅酰胺，氧化物或氮氧化物

    公开(公告)号：US07754906B2

    公开(公告)日：2010-07-13

    申请号：US11522768

    申请日：2006-09-18

    申请人： John Anthony Thomas Norman ,  Xinjian Lei

    发明人： John Anthony Thomas Norman ,  Xinjian Lei

    IPC分类号： C07F7/18

    CPC分类号： C07F11/005 ,  C07F7/003 ,  C07F9/005

    摘要： An organometallic complex represented by the structure: wherein M is a metal selected from Group 4 of the Periodic Table of the Elements and R1-4 can be same or different selected from the group consisting of dialkylamide, difluoralkylamide, hydrogen, alkyl, alkoxy, fluoroalkyl and alkoxy, cycloaliphatic, and aryl with the additional provision that when R1 and R2 are dialkylamide, difluoralkylamide, alkoxy, fluoroalkyl and alkoxy, they can be connected to form a ring. Related compounds are also disclosed. CVD and ALD deposition processes using the complexes are also included.

    摘要翻译： 由以下结构表示的有机金属络合物：其中M是选自元素周期表第4族的金属和R1-4可以相同或不同，选自二烷基酰胺，二氟烷基酰胺，氢，烷基，烷氧基，氟代烷基 和烷氧基，脂环族和芳基，另外条件是当R1和R2是二烷基酰胺，二氟烷基酰胺，烷氧基，氟代烷基和烷氧基时，它们可以连接形成环。 还公开了相关化合物。 还包括使用复合物的CVD和ALD沉积方法。

    Stabilization of nitrogen-containing and oxygen-containing organosilanes using weakly basic ion-exchange resins
    44.
    发明申请
    Stabilization of nitrogen-containing and oxygen-containing organosilanes using weakly basic ion-exchange resins 有权
    使用弱碱性离子交换树脂稳定含氮和含氧有机硅烷

    公开(公告)号：US20080058541A1

    公开(公告)日：2008-03-06

    申请号：US11514650

    申请日：2006-09-01

    申请人： Heather Regina Bowen ,  Xinjian Lei ,  Lee Arthur Senecal

    发明人： Heather Regina Bowen ,  Xinjian Lei ,  Lee Arthur Senecal

    IPC分类号： C07F7/10

    CPC分类号： C07F7/20

    摘要： A process to stabilize nitrogen-containing or oxygen-containing organosilane from acid catalyzed attack and retard the resulting decomposition is disclosed. Such organosilanes, and the nitrogen-containing organosilane in particular, with a least one Si—H or N—H group are susceptible to this type of product decomposition. Treatment with a weakly basic ion exchange media retards this decomposition by scavenging the anions or acids that are attacking the Si—H group. Dilute exposures to these anions can initiate significant decomposition and effect product stability and long-term shelf-life for semiconductor processing for the use of silicon oxide, silicon oxynitride and silicon nitride films.

    摘要翻译： 公开了一种使含氮或含氧有机硅烷从酸催化的作用发生稳定并延缓所产生的分解的过程。 这种有机硅烷和含氮有机硅烷，特别是含有至少一个Si-H或N-H基团，对这种类型的产物分解是敏感的。 弱碱性离子交换介质的处理通过清除正在攻击Si-H基团的阴离子或酸来阻止这种分解。 对这些阴离子的稀释曝光可以引发显着的分解，并且对于使用氧化硅，氮氧化硅和氮化硅膜的半导体处理，可以产生产品稳定性和长期保质期。

    Preparation of metal silicon nitride films via cyclic deposition
    45.
    发明申请
    Preparation of metal silicon nitride films via cyclic deposition 审中-公开
    通过循环沉积制备金属氮化硅膜

    公开(公告)号：US20060182885A1

    公开(公告)日：2006-08-17

    申请号：US11057446

    申请日：2005-02-14

    申请人： Xinjian Lei ,  Hareesh Thridandam ,  Kirk Cuthill ,  Arthur Hochberg

    发明人： Xinjian Lei ,  Hareesh Thridandam ,  Kirk Cuthill ,  Arthur Hochberg

    IPC分类号： C23C16/00

    CPC分类号： H01L21/0228 ,  C23C16/34 ,  C23C16/345 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02142 ,  H01L21/0215 ,  H01L21/02153 ,  H01L21/02205 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/0234 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/318

    摘要： This invention relates to an improved process for producing ternary metal silicon nitride films by the cyclic deposition of the precursors. The improvement resides in the use of a metal amide and a silicon source having both NH and SiH functionality as the precursors leading to the formation of such metal-SiN films. The precursors are applied sequentially via cyclic deposition onto the surface of a substrate. Exemplary silicon sources are monoalkylamino silanes and hydrazinosilanes represented by the formulas: (R1NH)nSiR2mH4-n-m (n=1,2; m=0,1,2; n+m=

    摘要翻译： 本发明涉及通过循环沉积前体制备三元金属氮化硅膜的改进方法。 改进在于使用具有NH和SiH官能团的金属酰胺和硅源作为导致形成这种金属SiN膜的前体。 通过循环沉积顺序地将前体施加到衬底的表面上。 示例性硅源是由下式表示的单烷基氨基硅烷和肼基吡啶：<？in-line-formula description =“In-line formula”end =“lead”？>（R 1） （n = 1,2; m = 0,1,2; n + 1）n + m = <3）; <？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> and <？in-line -formulae description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？>（R <3> （2）N-NH（x-1）2（x） 1,2; y = 0,1,2; x + y = <3）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中在上式R < 1-4是相同或不同的并且独立地选自烷基，乙烯基，烯丙基，苯基，环烷基，氟代烷基，甲硅烷基烷基。

    Organometallic complexes and their use as precursors to deposit metal films
    46.
    发明授权
    Organometallic complexes and their use as precursors to deposit metal films 有权
    有机金属配合物及其用作沉积金属膜的前体

    公开(公告)号：US07064224B1

    公开(公告)日：2006-06-20

    申请号：US11051140

    申请日：2005-02-04

    申请人： Xinjian Lei ,  Manchao Xiao ,  Hareesh Thridandam ,  Kirk Scott Cuthill

    发明人： Xinjian Lei ,  Manchao Xiao ,  Hareesh Thridandam ,  Kirk Scott Cuthill

    IPC分类号： C07F7/10 ,  H01L21/44 ,  C23C16/00

    CPC分类号： C07F15/065 ,  C07F7/10 ,  C07F15/025 ,  C07F15/045 ,  C23C16/18

    摘要： This invention is related to organometallic precursors and deposition processes for fabricating conformal metal containing films on substrates such as silicon, metal nitrides and other metal layers.The organometallic precursors are N,N′-alkyl-1,1-alkylsilylamino metal complexes represented by the formula: wherein M is a metal selected from Group VIIb, VIII, IX and X, and specific examples include cobalt, iron, nickel, manganese, ruthenium, zinc, copper, palladium, platinum, iridium, rhenium, osmium, and the R1-5 can be same or different selected from hydrogen, alkyl, alkoxy, fluoroalkyl and alkoxy, cycloaliphatic, and aryl.

    摘要翻译： 本发明涉及用于在诸如硅，金属氮化物和其它金属层的衬底上制造含适形金属膜的有机金属前体和沉积工艺。 有机金属前体是由下式表示的N，N'-烷基-1,1-烷基甲硅烷基氨基金属络合物：其中M是选自VIIb，VIII，IX和X族的金属，具体实例包括钴，铁，镍，锰 ，钌，锌，铜，钯，铂，铱，铼，锇和R 1-5可以相同或不同，选自氢，烷基，烷氧基，氟烷基和烷氧基，脂环族和 芳基。