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60 条记录 (耗时 0.03 秒)

    Quick heater for drinking water
    41.
    发明授权
    Quick heater for drinking water 失效
    快速加热器用于饮用水

    公开(公告)号：US06915070B1

    公开(公告)日：2005-07-05

    申请号：US10933239

    申请日：2004-09-03

    申请人： Ming-Tsung Lee

    发明人： Ming-Tsung Lee

    IPC分类号： F24H1/16 ,  F24H1/18 ,  F24H1/10

    CPC分类号： F24H1/165 ,  F24H1/185

    摘要： A quick heater for drinking water includes a helical water pipe defining a narrow space therebetween for fitting an electric heating tube and having a water inlet and a water outlet. The water pipe and the electric heating tube are wrapped up with a support base having its outer side bored with plural holes respectively for the opposite ends of the water pipe and two wire connecting terminals of the electric heating tube to extend out therethrough. The support base has plural lugs at the inner side for support a container with a water intake pipe and a water-releasing pipe, the water intake pipe connected with the water outlet of the water pipe. When cool water gets into the water pipe, it flows circularly therein and is heated by the electric heating tube, and then conveyed to the container for use through the water intake pipe.

    摘要翻译： 用于饮用水的快速加热器包括在其间限定狭窄空间的螺旋水管，用于装配电加热管并具有进水口和出水口。 水管和电加热管被分别具有用于水管的相对端和电加热管的两个连接端子的多个孔的外侧的支撑底座包围，从而延伸出来。 支撑底座在内侧具有多个凸耳，用于支撑具有进水管和排水管的容器，进水管与水管的出水口连接。 当冷水进入水管时，它循环流动，并被电加热管加热，然后通过进水管输送到容器使用。

    Food processor blade unit
    42.
    发明授权
    Food processor blade unit 失效
    食品处理器刀片单元

    公开(公告)号：US06834818B2

    公开(公告)日：2004-12-28

    申请号：US10414212

    申请日：2003-04-16

    申请人： Ming-Tsung Lee

    发明人： Ming-Tsung Lee

    IPC分类号： A47J43046

    CPC分类号： A47J43/0722

    摘要： A food processor blade unit includes an upper blade and a lower blade and a shaft. The upper blade has two side sections respectively divided into a first stage, a second stage and a third stage all angled differently. The lower blade has two side sections divided into a level section and a sloped section with a bending-down end section. Both the upper and the lower blade further respectively have one lengthwise side formed with a blade edge. Then the three stages of the upper blade can cut food into minute bits, and the level section and the sloped section of the lower blade can cut, stir and churn cut food repeatedly again and again into juice, minute bits or powder.

    摘要翻译： 食品处理器刀片单元包括上刀片和下刀片以及轴。 上部叶片具有分别分成第一阶段，第二阶段和第三阶段的两个侧面部分，其全部角度不同。 下刀片具有分为水平部分和具有弯曲下端部分的倾斜部分的两个侧部部分。 上下刀片还分别具有形成有刀刃的一个纵向侧。 然后，上刀片的三个阶段可以将食物切成微小的位，下刀片的水平部分和倾斜部分可以一次又一次地切割，搅拌和搅拌切割食物，成果汁，微小颗粒或粉末。

    Blender
    43.
    外观设计
    Blender 失效
    搅拌机

    公开(公告)号：USD465127S1

    公开(公告)日：2002-11-05

    申请号：US29154297

    申请日：2002-01-24

    申请人： Ming-Tsung Lee

    设计人： Ming-Tsung Lee

    Integrated circuit device
    44.
    发明授权
    Integrated circuit device 有权
    集成电路器件

    公开(公告)号：US08896021B2

    公开(公告)日：2014-11-25

    申请号：US13232048

    申请日：2011-09-14

    申请人： Chung-I Huang ,  Pao-An Chang ,  Ming-Tsung Lee

    发明人： Chung-I Huang ,  Pao-An Chang ,  Ming-Tsung Lee

    IPC分类号： H01L29/66 ,  H01L27/088 ,  H01L29/78 ,  H01L27/06 ,  H01L29/739 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40

    CPC分类号： H01L27/0623 ,  H01L27/088 ,  H01L29/0634 ,  H01L29/0847 ,  H01L29/404 ,  H01L29/7393 ,  H01L29/7835

    摘要： An integrated circuit device includes a semiconductor substrate and a first transistor and a second transistor constructed in the semiconductor substrate. The first transistor has a first operating voltage higher than a second operating voltage of a second transistor. The first transistor includes a first drain structure, a first source structure, an isolation structure and a first gate structure. The first source structure includes a high voltage first-polarity well region, a first-polarity body region, a heavily doped first-polarity region, a second-polarity grade region and a heavily doped second-polarity region. The heavily doped second-polarity region is surrounded by the second-polarity grade region. The second-polarity grade region is surrounded by the first-polarity body region. The second transistor includes a second drain structure, a second source structure, a second gate structure and a first-polarity drift region. The first-polarity drift region and the first-polarity body region have the same dopant concentration.

    摘要翻译： 集成电路器件包括半导体衬底和构造在半导体衬底中的第一晶体管和第二晶体管。 第一晶体管具有高于第二晶体管的第二工作电压的第一工作电压。 第一晶体管包括第一漏极结构，第一源极结构，隔离结构和第一栅极结构。 第一源结构包括高电压第一极性阱区，第一极性体区，重掺杂的第一极性区，第二极性等级区和重掺杂的第二极性区。 重掺杂的第二极性区域被第二极性等级区域包围。 第二极性等级区域由第一极性体区域包围。 第二晶体管包括第二漏极结构，第二源极结构，第二栅极结构和第一极性漂移区。 第一极性漂移区域和第一极性体区域具有相同的掺杂剂浓度。

    High-voltage semiconductor device with electrostatic discharge protection
    48.
    发明授权
    High-voltage semiconductor device with electrostatic discharge protection 有权
    具有静电放电保护功能的高压半导体器件

    公开(公告)号：US08436418B2

    公开(公告)日：2013-05-07

    申请号：US13163734

    申请日：2011-06-20

    申请人： Chih-Chung Wang ,  Wei-Lun Hsu ,  Te-Yuan Wu ,  Ke-Feng Lin ,  Shan-Shi Huang ,  Ming-Tsung Lee ,  Wen-Fang Lee

    发明人： Chih-Chung Wang ,  Wei-Lun Hsu ,  Te-Yuan Wu ,  Ke-Feng Lin ,  Shan-Shi Huang ,  Ming-Tsung Lee ,  Wen-Fang Lee

    IPC分类号： H01L29/94

    CPC分类号： H01L27/0251 ,  H01L27/0266 ,  H01L29/0634 ,  H01L29/1087 ,  H01L29/404 ,  H01L29/42368 ,  H01L29/7817 ,  H01L29/7835 ,  H01L29/7838 ,  H01L29/861

    摘要： The present invention provides a high-voltage semiconductor device including a deep well, a first doped region disposed in the deep well, a high-voltage well, a second doped region disposed in the high-voltage well, a first gate structure disposed on the high-voltage well between the second doped region and the first doped region, a doped channel region disposed in the high-voltage region and in contact with the second doped region and the deep well, and a third doped region disposed in the high-voltage well. The high-voltage well has a first conductive type, and the deep well, the first doped region, the second doped region, the doped channel region, and the third doped region have a second conductive type different from the first conductive type.

    摘要翻译： 本发明提供了一种高压半导体器件，包括深阱，设置在深阱中的第一掺杂区，高电压阱，设置在高压阱中的第二掺杂区，设置在高阱上的第一栅极结构 在所述第二掺杂区域和所述第一掺杂区域之间的高电压阱，设置在所述高压区域中并与所述第二掺杂区域和所述深阱接触的掺杂沟道区域，以及设置在所述高压区域中的第三掺杂区域 好。 高电压阱具有第一导电类型，并且深阱，第一掺杂区域，第二掺杂区域，掺杂沟道区域和第三掺杂区域具有不同于第一导电类型的第二导电类型。

    HIGH-VOLTAGE SEMICONDUCTOR DEVICE
    49.
    发明申请
    HIGH-VOLTAGE SEMICONDUCTOR DEVICE 有权
    高压半导体器件

    公开(公告)号：US20120319189A1

    公开(公告)日：2012-12-20

    申请号：US13163734

    申请日：2011-06-20

    申请人： Chih-Chung Wang ,  Wei-Lun Hsu ,  Te-Yuan Wu ,  Ke-Feng Lin ,  Shan-Shi Huang ,  Ming-Tsung Lee ,  Wen-Fang Lee

    发明人： Chih-Chung Wang ,  Wei-Lun Hsu ,  Te-Yuan Wu ,  Ke-Feng Lin ,  Shan-Shi Huang ,  Ming-Tsung Lee ,  Wen-Fang Lee

    IPC分类号： H01L29/739

    CPC分类号： H01L27/0251 ,  H01L27/0266 ,  H01L29/0634 ,  H01L29/1087 ,  H01L29/404 ,  H01L29/42368 ,  H01L29/7817 ,  H01L29/7835 ,  H01L29/7838 ,  H01L29/861

    摘要： The present invention provides a high-voltage semiconductor device including a deep well, a first doped region disposed in the deep well, a high-voltage well, a second doped region disposed in the high-voltage well, a first gate structure disposed on the high-voltage well between the second doped region and the first doped region, a doped channel region disposed in the high-voltage region and in contact with the second doped region and the deep well, and a third doped region disposed in the high-voltage well. The high-voltage well has a first conductive type, and the deep well, the first doped region, the second doped region, the doped channel region, and the third doped region have a second conductive type different from the first conductive type.

    摘要翻译： 本发明提供了一种高压半导体器件，包括深阱，设置在深阱中的第一掺杂区，高电压阱，设置在高压阱中的第二掺杂区，设置在高阱上的第一栅极结构 在所述第二掺杂区域和所述第一掺杂区域之间的高电压阱，设置在所述高压区域中并与所述第二掺杂区域和所述深阱接触的掺杂沟道区域，以及设置在所述高压区域中的第三掺杂区域 好。 高电压阱具有第一导电类型，并且深阱，第一掺杂区域，第二掺杂区域，掺杂沟道区域和第三掺杂区域具有不同于第一导电类型的第二导电类型。