公开(公告)号：US20080036090A1

公开(公告)日：2008-02-14

申请号：US11834081

申请日：2007-08-06

申请人： Tomio Iwasaki ,  Hideo Miura

发明人： Tomio Iwasaki ,  Hideo Miura

IPC分类号： H01L23/532

CPC分类号： H01L23/53238 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/7685 ,  H01L23/53228 ,  H01L23/53242 ,  H01L23/53252 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided, is a reliable semiconductor device with a layered interconnect structure that may develop no trouble of voids and interconnect breakdowns, in which the layered interconnect structure comprises a conductor film and a neighboring film as so layered on a semiconductor substrate that the neighboring film is contacted with the conductor film. In the device, the materials for the conductor film and the neighboring film are so selected that the difference between the short side, ap, of the rectangular unit cells that constitute the plane with minimum free energy of the conductor film and the short side, an, of the rectangular unit cells that constitute the plane with minimum free energy of the neighboring film, {|ap−an|/ap}×100=A (%) and the difference between the long side, bp, of the rectangular unit cells that constitute the plane with minimum free energy of the conductor film and the long side, bn, of the rectangular unit cells that constitute the plane with minimum free energy of the neighboring film, {|bp−bn|/bp}×100=B (%) satisfy an inequality of {A+B×(ap/bp)}

摘要翻译： 提供的是具有分层互连结构的可靠的半导体器件，其可以不产生空隙和互连故障的问题，其中分层互连结构包括导体膜和相邻的膜，如此分层在半导体衬底上，邻近膜被接触 与导体膜。 在该器件中，用于导体膜和相邻膜的材料被选择成使构成具有最小自由能的平面的矩形单元电池的短边，即< 导体薄膜和构成具有相邻薄膜的最小自由能的平面的矩形单元电池的短边，即 _{n 构成该矩阵单元的长边，b p 之间的差，x100 = A（％） 构成具有相邻膜的最小自由能的平面的矩形单位电池的导体膜和长边的最小自由能的平面{| b＆lt; p＆lt; x100 = B（％）满足不等式{A + Bx（a p b＆lt; p＆lt; p＆gt;）} <13。 在此，导体膜的扩散被延迟。}

公开(公告)号：US07296939B2

公开(公告)日：2007-11-20

申请号：US11188648

申请日：2005-07-26

申请人： Shinichiro Sonoda ,  Kazuhiko Nagano ,  Hideo Miura

发明人： Shinichiro Sonoda ,  Kazuhiko Nagano ,  Hideo Miura

IPC分类号： G02B6/36

CPC分类号： G02B6/4204 ,  G02B6/4248

摘要： A laser module includes: one or more semiconductor laser elements which emit one or more divergent laser beams; one or more collimator lenses which collimate the one or more divergent laser beams; a condensing lens which condenses the one or more collimated laser beams, and make the one or more collimated laser beams converge at a convergence position; an optical fiber which is arranged in such a manner that the convergence position is located on the light-entrance end face; and a package which contains the one or more semiconductor laser elements and the one or more collimator lenses, does not contain the condensing lens and the light-entrance end face, and is hermetically sealed.

摘要翻译： 激光模块包括：发射一个或多个发散激光束的一个或多个半导体激光元件; 一个或多个准直透镜，其准直一个或多个发散激光束; 聚光透镜，其使所述一个或多个准直激光束聚光，并使所述一个或多个准直激光束会聚在会聚位置; 光纤，其以会聚位置位于光入射端面上的方式配置; 以及包含所述一个以上的半导体激光元件和所述一个以上的准直透镜的封装，不包含所述聚光透镜和所述光入射端面，并且被密封。

公开(公告)号：US07226222B2

公开(公告)日：2007-06-05

申请号：US11197592

申请日：2005-08-05

申请人： Kazuhiko Nagano ,  Hideo Miura ,  Shinichiro Sonoda

发明人： Kazuhiko Nagano ,  Hideo Miura ,  Shinichiro Sonoda

IPC分类号： G02B6/36

CPC分类号： G02B6/4248 ,  G02B6/3897 ,  G02B6/4249 ,  G02B6/4292

摘要： In a laser module in which laser beams emitted from semiconductor laser elements are collimated by collimator lenses, and condensed by an optical condensing system so that the laser beams converge at a light-entrance end face of an optical fiber. The semiconductor laser elements and the collimator lenses are contained in a hermetically sealed, first package which includes a front wall having a window arranged for passage of the laser beams, and a portion of the optical condensing system and the light-entrance end face are contained in a hermetically sealed, second package which is fixed to the front wall. The cross section of the second package perpendicular to the optical axis of the optical fiber at the light-entrance end face is smaller than the cross section of the first package parallel to the cross section of the second package.

摘要翻译： 在从半导体激光元件射出的激光束通过准直透镜准直的激光模块中，通过光聚光系统进行聚光，使得激光束会聚在光纤的光入射端面。 半导体激光元件和准直透镜被包含在气密密封的第一封装中，该封装包括具有布置成用于激光束通过的窗口的前壁，并且包含光聚光系统和光入射端面的一部分 在密封的第二包装中，其被固定到前壁。 在光入射端面处垂直于光纤的光轴的第二封装的横截面小于与第二封装的横截面平行的第一封装的横截面。

公开(公告)号：US20070096189A1

公开(公告)日：2007-05-03

申请号：US11594780

申请日：2006-11-09

申请人： Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

发明人： Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

IPC分类号： H01L29/94 ,  H01L21/8242

CPC分类号： H01L29/517 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/31604 ,  H01L27/10814 ,  H01L28/40 ,  H01L28/60 ,  H01L29/513

摘要： In order to supply a semiconductor device having high-reliability, there are used a first capacitor electrode, a capacitor insulating film formed in contact with the first capacitor electrode and mainly composed of titanium oxide, and a second capacitor electrode formed in contact with the capacitor insulating film, and there is used a conductive oxide film mainly composed of ruthenium oxide or iridium oxide for the first capacitor electrode and the second capacitor electrode. Alternatively, there is used a gate insulating film having a titanium silicate film and titanium oxide which suppress leakage current.

摘要翻译： 为了提供具有高可靠性的半导体器件，使用第一电容器电极，形成为与第一电容器电极接触并主要由氧化钛构成的电容器绝缘膜，以及形成为与电容器接触的第二电容器电极 并且使用主要由氧化钌或氧化铱构成的导电氧化物膜用于第一电容器电极和第二电容器电极。 或者，使用具有抑制漏电流的钛硅酸盐膜和氧化钛的栅极绝缘膜。

公开(公告)号：US06960832B2

公开(公告)日：2005-11-01

申请号：US10761333

申请日：2004-01-22

申请人： Hiromi Shimazu ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Hideo Miura ,  Shuji Ikeda

发明人： Hiromi Shimazu ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Hideo Miura ,  Shuji Ikeda

IPC分类号： H01L21/285 ,  H01L21/336 ,  H01L21/768 ,  H01L23/12 ,  H01L21/00

CPC分类号： H01L29/665 ,  H01L21/28518 ,  H01L21/76877

摘要： In a semiconductor device having a cobalt silicide film, at least nickel or iron is contained in the cobalt silicide film for preventing the rise of resistance incidental to thinning of the film.

摘要翻译： 在具有钴硅化物膜的半导体器件中，钴硅化物膜中至少含有镍或铁，以防止附着于薄膜变薄的电阻上升。

公开(公告)号：US20050196935A1

公开(公告)日：2005-09-08

申请号：US11108827

申请日：2005-04-19

申请人： Norio Ishitsuka ,  Hideo Miura ,  Shuji Ikeda ,  Norio Suzuki ,  Yasushi Matsuda ,  Yasuko Yoshida ,  Hirohiko Yamamoto ,  Masamichi Kobayashi ,  Akira Takamatsu ,  Hirofumi Shimizu ,  Kazushi Fukuda ,  Shinichi Horibe ,  Toshio Nozoe

发明人： Norio Ishitsuka ,  Hideo Miura ,  Shuji Ikeda ,  Norio Suzuki ,  Yasushi Matsuda ,  Yasuko Yoshida ,  Hirohiko Yamamoto ,  Masamichi Kobayashi ,  Akira Takamatsu ,  Hirofumi Shimizu ,  Kazushi Fukuda ,  Shinichi Horibe ,  Toshio Nozoe

IPC分类号： H01L21/31 ,  H01L21/76 ,  H01L21/762

CPC分类号： H01L21/76232 ,  H01L21/76235 ,  H01L29/78

摘要： A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.

公开(公告)号：US06907059B1

公开(公告)日：2005-06-14

申请号：US09534034

申请日：2000-03-24

申请人： Hideo Miura ,  Kazumi Kubo

发明人： Hideo Miura ,  Kazumi Kubo

IPC分类号： G02B7/00 ,  H01S3/02 ,  H01S3/08 ,  B32B17/00 ,  B32B31/00 ,  C03C27/00

CPC分类号： H01S3/025 ,  H01S3/0401 ,  H01S3/0405 ,  H01S3/042 ,  H01S3/09415 ,  Y10T156/1064

摘要： A method of fixing an optical component includes the steps of scoring a surface of a support, bringing an optical component into close contact with the scored surface of the support, and flowing a fluid adhesive along kerfs produced by the scoring. An optical component support has a surface provided with scoring kerts for fixing the optical component. The method and support enable fixing of an optical component by a thin, uniform adhesive layer, without fine polishing of the optical component and the surface of the support.

摘要翻译： 固定光学部件的方法包括以下步骤：对支撑体的表面进行刻痕，使光学部件与支撑体的刻痕表面紧密接触，并且使流体粘合剂沿着由刻痕产生的切口流动。 光学部件支撑件具有设置有用于固定光学部件的刻痕警报器的表面。 该方法和支持使得能够通过薄的均匀的粘合剂层固定光学部件，而不会精细地抛光光学部件和支撑体的表面。

公开(公告)号：US06881646B2

公开(公告)日：2005-04-19

申请号：US10392916

申请日：2003-03-21

申请人： Norio Ishitsuka ,  Hideo Miura ,  Shuji Ikeda ,  Norio Suzuki ,  Yasushi Matsuda ,  Yasuko Yoshida ,  Hirohiko Yamamoto ,  Masamichi Kobayashi ,  Akira Takamatsu ,  Hirofumi Shimizu ,  Kazushi Fukuda ,  Shinichi Horibe ,  Toshio Nozoe

发明人： Norio Ishitsuka ,  Hideo Miura ,  Shuji Ikeda ,  Norio Suzuki ,  Yasushi Matsuda ,  Yasuko Yoshida ,  Hirohiko Yamamoto ,  Masamichi Kobayashi ,  Akira Takamatsu ,  Hirofumi Shimizu ,  Kazushi Fukuda ,  Shinichi Horibe ,  Toshio Nozoe

IPC分类号： H01L21/31 ,  H01L21/76 ,  H01L21/762

CPC分类号： H01L21/76232 ,  H01L21/76235 ,  H01L29/78

摘要： A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.

摘要翻译： 一种制造半导体器件的方法，该半导体器件具有高度可靠的凹槽隔离结构，其具有在凹槽上边缘处形成的所需曲率半径，并且不形成任何步骤。 通过减小半导体衬底上的元件隔离槽的槽上边缘周围的应力产生，从而优化元件隔离槽的形状并使器件更精细并提高器件电气特性来制造器件。

公开(公告)号：US20050079667A1

公开(公告)日：2005-04-14

申请号：US10503350

申请日：2003-02-05

申请人： Tomio Iwasaki ,  Norio Ishitsuka ,  Hideo Miura

发明人： Tomio Iwasaki ,  Norio Ishitsuka ,  Hideo Miura

IPC分类号： H01L21/265 ,  H01L21/336 ,  H01L21/8244 ,  H01L21/8247 ,  H01L27/11 ,  H01L27/115 ,  H01L29/49 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H01L21/425 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/76 ,  H01L29/94

CPC分类号： H01L29/6659 ,  H01L21/26513 ,  H01L29/4925 ,  H01L29/4983 ,  H01L29/7833

摘要： A semiconductor device having a high degree of reliability is provided. A second object of the invention is to provide a semiconductor device of high yield. The semiconductor includes a silicon substrate, a gate dielectric film formed on one main surface of the silicon substrate, a gate electrode formed by being stacked on the gate dielectric film and a diffusion layer containing arsenic and phosphorus. Both of the concentration of the highest concentration portion of arsenic and the concentration of the highest concentration portion of phosphorus are each at 1026 atoms/m3 or more and 1027 atoms/m3 or less, and the depth of the highest concentration portion of phosphorus from the surface of the silicon substrate is less than the depth of the highest concentration portion of arsenic.

摘要翻译： 提供了具有高可靠性的半导体器件。 本发明的第二个目的是提供一种高产率的半导体器件。 半导体包括硅衬底，形成在硅衬底的一个主表面上的栅极电介质膜，通过层叠在栅极电介质膜上形成的栅电极和含有砷和磷的扩散层。 砷的最高浓度部分的浓度和磷的最高浓度部分的浓度分别为10 26个/ m 3以上且10 27个/ m 3以下， 并且来自硅衬底的表面的磷的最高浓度部分的深度小于砷的最高浓度部分的深度。

公开(公告)号：US06856021B1

公开(公告)日：2005-02-15

申请号：US09648455

申请日：2000-08-28

申请人： Tomio Iwasaki ,  Hideo Miura ,  Takashi Nakajima ,  Hiroyuki Ohta ,  Shinji Nishihara ,  Masashi Sahara

发明人： Tomio Iwasaki ,  Hideo Miura ,  Takashi Nakajima ,  Hiroyuki Ohta ,  Shinji Nishihara ,  Masashi Sahara

IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532

CPC分类号： H01L21/76844 ,  H01L21/32051 ,  H01L21/76843 ,  H01L21/7685 ,  H01L23/53219 ,  H01L23/53223 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device is provided which includes a semiconductor substrate, metal conductors formed on a side of a main face of the substrate, which metal conductors contain aluminum as a main constituent thereof, and copper as an additive element, the metal conductors being made to contain such an element as to suppress the precipitation of copper or being made to have such a film adjacent to the metal conductor as to suppress the precipitation of copper or being made to have such a film adjacent to the metal conductor as to suppress the precipitation of copper.

摘要翻译： 提供了一种半导体器件，其包括半导体衬底，形成在衬底的主面一侧的金属导体，该金属导体以铝为主要成分，铜作为添加元素，金属导体被制成含有 抑制铜的析出或使金属导体附近具有这样的膜的元素，以抑制铜的沉淀，或者使该膜与金属导体相邻，以抑制铜的析出 。