公开(公告)号：US06500752B2

公开(公告)日：2002-12-31

申请号：US09904869

申请日：2001-07-16

申请人： Taizo Oku ,  Junichi Aoki ,  Youichi Yamamoto ,  Takashi Koromokawa ,  Kazuo Maeda

发明人： Taizo Oku ,  Junichi Aoki ,  Youichi Yamamoto ,  Takashi Koromokawa ,  Kazuo Maeda

IPC分类号： H01L214763

CPC分类号： H01L21/02274 ,  C23C16/401 ,  C23C16/509 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834

摘要： The present invention relates to a semiconductor device manufacturing method of forming an inter-wiring layer insulating film having a low dielectric constant to cover a copper wiring. In construction, in a semiconductor device manufacturing method of forming an insulating film 34 having a low dielectric constant on a substrate 20, the insulating film 34 is formed by plasmanizing a film forming gas, that consists of at least any one of alkyl compound having siloxane bonds and methylsilane (SiHn(CH3)4−n: n=0, 1, 2, 3), any one oxygen-containing gas selected from a group consisting of N2O, H2O, and CO2, and ammonia (NH3) to react.

公开(公告)号：US06372670B1

公开(公告)日：2002-04-16

申请号：US09477352

申请日：2000-01-04

申请人： Kazuo Maeda

发明人： Kazuo Maeda

IPC分类号： H01L2131

CPC分类号： C23C16/52 ,  C23C16/402 ,  C23C16/45561 ,  C23C16/515 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L2221/1047

摘要： Disclosed is a method for forming an interlayer insulating film which comprises the steps of forming an underlying insulating film on a substrate; forming a porous SiO2 film on the underlying insulating film by chemical vapor deposition method using Si2H6 and an oxidative gas as a reaction gas; subjecting the porous SiO2 film to H (hydrogen) plasma treatment; forming a plasma SiO2 film and a fluidic SiO2 film formed by TEOS+O3 on the porous SiO2 film; then smoothing a surface of the SiO2 film by etching; and forming a cover insulating film on the smoothed surface.

摘要翻译： 公开了一种用于形成层间绝缘膜的方法，包括以下步骤：在基板上形成下面的绝缘膜; 通过使用Si 2 H 6和氧化性气体作为反应气体的化学气相沉积法在下面的绝缘膜上形成多孔SiO 2膜; 将多孔SiO 2膜进行H（氢）等离子体处理; 在多孔SiO 2膜上形成等离子体SiO 2膜和由TEOS + O 3形成的流体SiO 2膜; 然后通过蚀刻来平滑SiO 2膜的表面; 并在平滑的表面上形成覆盖绝缘膜。

公开(公告)号：US6110290A

公开(公告)日：2000-08-29

申请号：US12452

申请日：1998-01-23

申请人： Kazuo Maeda

发明人： Kazuo Maeda

IPC分类号： C30B25/10 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  C30B25/02 ,  C30B25/14 ,  C30B25/22 ,  H01L21/205 ,  C23C14/00

CPC分类号： C30B25/22 ,  C30B29/06

摘要： This invention concerns a method for epitaxial growth by the use of a so-called heterogeneous reaction and includes disposing a source material in a first area of a horizontal chamber, disposing a growth substrate in a second area thereof, heating the first area thereby keeping the source material at a first temperature, heating the second area thereby keeping the growth substrate at a second temperature, lower than the first temperature, introducing a reaction gas into the chamber thereby causing the reaction gas to react with the source material and depositing the resultant reaction product on the growth substrate and consequently obtaining formation of a film by epitaxial growth.

摘要翻译： 本发明涉及通过使用所谓的非均相反应进行外延生长的方法，包括将源材料设置在水平室的第一区域中，将生长衬底放置在其第二区域中，加热第一区域从而保持 在第一温度下加热第二区域，从而将生长衬底保持在低于第一温度的第二温度，将反应气体引入室中，从而使反应气体与源材料反应并沉积所得反应 产物在生长衬底上，从而通过外延生长获得膜的形成。

公开(公告)号：US5434905A

公开(公告)日：1995-07-18

申请号：US159661

申请日：1993-11-30

申请人： Kazuo Maeda ,  Masayasu Fujino ,  Jun Yang ,  Kiyoshi Tanaka

发明人： Kazuo Maeda ,  Masayasu Fujino ,  Jun Yang ,  Kiyoshi Tanaka

IPC分类号： H04B7/26 ,  H04L7/04 ,  H04M1/725 ,  H04W56/00 ,  H04W72/04 ,  H04W84/16 ,  H04Q7/22 ,  H04M11/00

CPC分类号： H04W56/0085 ,  H04B7/2681 ,  H04M1/72505 ,  H04L7/046 ,  H04W76/02 ,  H04W84/16

摘要： A cordless telephone set comprises a base unit and a handset unit connected by a radio frequency (RF) link which is established by digital burst data transmission and is synchronized by a unique word which is included in the digital burst data. The radio transmission signal is not continuous and it requires the synchronization. The unique word is detected by the unique word detecting means and is used to establish the burst data synchronization. The unite word consists of frequency channel information and fixed unite data. By using this information, the base unit and the handset unit are prevented from trying to establish a radio link at incorrect frequency when a spurious signal, not intended for the base unit and/or handset unit is erroneously received.

摘要翻译： 无绳电话机包括基站单元和通过数字突发数据传输建立的射频（RF）链路连接的手机单元，并通过包含在数字突发数据中的唯一字进行同步。 无线电传输信号不连续，需要同步。 唯一字由唯一字检测装置检测，并用于建立突发数据同步。 团结单词由频道信息和固定的统一数据组成。 通过使用该信息，当不准用于基本单元和/或手持机单元的伪信号被错误地接收时，基本单元和手持通话单元被阻止尝试以不正确的频率建立无线电链路。

公开(公告)号：US5286681A

公开(公告)日：1994-02-15

申请号：US901329

申请日：1992-06-19

申请人： Kazuo Maeda ,  Bunya Matsui ,  Yuko Nishimoto

发明人： Kazuo Maeda ,  Bunya Matsui ,  Yuko Nishimoto

IPC分类号： H01L21/3105 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/02

CPC分类号： H01L21/02129 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/31625 ,  H01L21/76819

摘要： The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for forming a film used for flattening a substrate surface having unevenness in a manufacturing process of a semiconductor device, and has for its object to provide a method of manufacturing a semiconductor device for making it possible to flatten a film by processing at a lower temperature without deteriorating the film quality.The present invention is structured including a process of depositing a film composed of BPSG or PSG on a substrate surface having unevenness, a process of depositing a SiO.sub.2 film or depositing a film composed of BPSG or PSG having concentration lower than phosphorus concentration or boron concentration in the film or a SiO.sub.2 film on the film, and a process of melting and fluidizing these films so as to flatten them by applying heat treatment.

摘要翻译： 本发明涉及一种半导体器件的制造方法，更具体地说，涉及一种用于在半导体器件的制造工艺中使具有不平坦度的衬底表面平坦化的膜的形成方法，其目的在于提供一种 制造半导体器件，使得可以在较低温度下处理而使膜平坦化，而不会降低膜质量。 本发明的结构包括在具有凹凸的基板表面上沉积由BPSG或PSG构成的膜的工艺，沉积SiO 2膜或沉积由磷浓度低于硼浓度或硼浓度的BPSG或PSG组成的膜的工艺 薄膜上的薄膜或SiO 2膜，以及这些薄膜的熔融和流化以通过施加热处理使它们变平的方法。

公开(公告)号：US4206081A

公开(公告)日：1980-06-03

申请号：US848235

申请日：1977-11-03

申请人： Hideya Inaba ,  Kazuo Maeda ,  Yasumi Kamino ,  Toshio Hama ,  Kenichi Nagai ,  Masayoshi Ichiki

发明人： Hideya Inaba ,  Kazuo Maeda ,  Yasumi Kamino ,  Toshio Hama ,  Kenichi Nagai ,  Masayoshi Ichiki

IPC分类号： B01D53/94 ,  B01J23/22 ,  B01J37/02 ,  B01J21/04 ,  B01J23/74 ,  B01J25/00 ,  B01J27/02

CPC分类号： B01J37/0207 ,  B01D53/9418 ,  B01J23/22 ,  B01D2251/2062 ,  B01D2255/20723 ,  B01D2255/20738 ,  B01D2255/20753 ,  B01D2255/20769 ,  B01D2255/20776

摘要： A highly active denitrating catalyst is produced by converting the surface layer of steel material to an aluminum alloy, treating the resulting steel material with an aluminum dissolving solution to dissolve out the aluminum and to render the surface layer porous, and immersing the steel material having the porous surface layer in a solution containing a vanadium compound to cause the porous surface layer to support the vanadium compound.

摘要翻译： 通过将钢材表面层转化为铝合金制成高活性脱硝催化剂，用铝溶解液处理得到的钢材，使铝溶解，使表层多孔，并浸渍具有 在含有钒化合物的溶液中的多孔表面层，以使多孔表面层支持钒化合物。

公开(公告)号：US4179326A

公开(公告)日：1979-12-18

申请号：US787495

申请日：1977-04-14

申请人： Daiziro Kudo ,  Kazuo Maeda ,  Eiki Tanikawa

发明人： Daiziro Kudo ,  Kazuo Maeda ,  Eiki Tanikawa

IPC分类号： C23C16/458 ,  C30B25/14 ,  B01J17/26

CPC分类号： C23C16/458 ,  C30B25/14 ,  Y10S148/006 ,  Y10S148/118 ,  Y10S148/125

摘要： Disclosed herewith is an improvement of the conventional process for the vapor growth of a thin film, such as the films of SiO.sub.2, Si.sub.3 N.sub.4, Al.sub.2 O.sub.3 and polycrystalline Si, on a plurality of wafers, such as wafers of a semiconductor, under a reduced pressure. This improved process allows the growing of a uniformly thin film on each piece of wafer. According to the present invention, the location of the wafers is changed in accordance with a specific pressure within the reaction tube.

摘要翻译： 这里公开了在减压下在诸如半导体晶片的多个晶片上的诸如SiO 2，Si 3 N 4，Al 2 O 3和多晶Si的薄膜的气相生长的常规方法的改进。 这种改进的方法允许在每片晶片上生长均匀的薄膜。 根据本发明，晶片的位置根据反应管内的特定压力而改变。

公开(公告)号：US4042674A

公开(公告)日：1977-08-16

申请号：US687447

申请日：1976-05-18

申请人： Kousuke Yamamoto ,  Shinji Takenaka ,  Kazuo Maeda

发明人： Kousuke Yamamoto ,  Shinji Takenaka ,  Kazuo Maeda

IPC分类号： C01B17/66

CPC分类号： C01B17/66

摘要： In the production of anhydrous sodium dithionite by reacting sodium formate, an alkaline sodium compound and sulfurous acid anhydride in hydrous methanol, a process for treating the mother liquor, which comprises cooling the mother liquor left after the separation of the resulting anhydrous sodium dithionite to a temperature in the range of +5.degree. to -30.degree. C, and separating the precipitated sodium thiosulfate by filtration.

摘要翻译： 在含水甲醇中通过使甲酸钠，碱性钠化合物和亚硫酸酐反应生产无水连二亚硫酸钠的方法，该方法包括将得到的无水连二亚硫酸钠分离后残留的母液冷却至 温度在+5°至-30℃的范围内，并通过过滤分离沉淀的硫代硫酸钠。

公开(公告)号：US4038992A

公开(公告)日：1977-08-02

申请号：US617582

申请日：1975-09-29

申请人： Katsuhiro Ogasa ,  Joji Ono ,  Tsutomu Kudo ,  Kazuyoshi Doi ,  Katsuichi Noguchi ,  Kazuo Maeda

发明人： Katsuhiro Ogasa ,  Joji Ono ,  Tsutomu Kudo ,  Kazuyoshi Doi ,  Katsuichi Noguchi ,  Kazuo Maeda

IPC分类号： A24D3/06 ,  A24B15/02 ,  A24B15/033

CPC分类号： A24D3/06

摘要： A granular composition having a grain size of 10 to 50 mesh and a bulk density of 0.5 to 0.7 g/cm.sup.3 suitable for use in a tobacco filter or a tobacco pipe and having the ability to selectively remove carcinogenic and deleterious components from tobacco smoke comprises granules which are composed of bovine milk whey protein power and/or egg white protein powder, and one or more excipients selected from the group consisting of powdered cellulose, wheat flour, starch, rice flour, sugar, glucose, lactose, talc, alumina, zeolite or silica gel; or composite granules which are a blend of said granules and charcoal granules.

摘要翻译： 适用于烟草过滤嘴或烟草管并具有从烟草烟雾中选择性除去致癌和有害成分的能力的颗粒大小为10至50目，体积密度为0.5至0.7g / cm 3的颗粒组合物包含颗粒 由牛奶乳清蛋白粉和/或蛋白蛋白粉组成的一种或多种赋形剂，以及选自粉状纤维素，小麦粉，淀粉，米粉，糖，葡萄糖，乳糖，滑石，氧化铝，沸石 或硅胶; 或作为所述颗粒和木炭颗粒的混合物的复合颗粒。

公开(公告)号：US3951365A

公开(公告)日：1976-04-20

申请号：US514070

申请日：1974-10-11

申请人： Kazuo Maeda

发明人： Kazuo Maeda

IPC分类号： E01B7/00 ,  E01B7/18

CPC分类号： E01B7/28 ,  E01B7/00

摘要： Rail crossover arrangement characterized in that wheels can pass through the crossover without shock. To this end flanged portions of the wheels are supported on the crossover plate provided in the intersections of the rails when the wheels pass through the intersections.

摘要翻译： 轨道交叉布置，其特征在于车轮可以穿过交叉口而不会受到冲击。 为此，当车轮通过交叉点时，车轮的凸缘部分被支撑在设置在轨道的交叉点的交叉板上。