公开(公告)号：US20100163092A1

公开(公告)日：2010-07-01

申请号：US11997871

申请日：2006-07-04

Applicant: Nobuyoshi Takeuchi

Inventor： Nobuyoshi Takeuchi

IPC: H01L31/042

CPC classification number: H02S40/34

Abstract: A terminal box 3 is provided on the reverse side of each module in a plurality of solar cell modules 2 which forms a solar cell module group 1. A positive connecting terminal 4 and a negative connecting terminal 5 are attached to the side surface of the terminal box 3. Two cables 6, 7 come out of the terminal box 3. A positive connecting terminal 8 is attached to one cable 6 and a negative connecting terminal 9 is attached to the other cable 7. The positive connecting terminal 8 of the solar cell module 2 is connected to the positive connecting terminal 4 of the adjacent solar cell module 2, while the negative connecting terminal 9 is attached to the negative connecting terminal 5 of the adjacent solar cell module 2. The positive connecting terminal 8 of the last solar cell module 2 is connected to the positive connecting terminal 4 of the first solar cell module 2, while the negative connecting terminal 9 of the last solar cell module 2 is connected to the negative connecting terminal 5 of the first solar cell module 2, thereby completing the solar cell module group 1 which is connected in parallel in a closed loop.

Abstract translation: 在形成太阳能电池模块组1的多个太阳能电池模块2中的每个模块的背面设置有接线盒3.正极连接端子4和负极连接端子5安装在端子的侧面 两个电缆6,7从接线盒3出来。正极连接端子8安装在一个电缆6上，负极连接端子9连接到另一个电缆7.太阳能电池的正极连接端子8 模块2连接到相邻太阳能电池模块2的正极连接端子4，而负极连接端子9连接到相邻的太阳能电池模块2的负极连接端子5.最后一个太阳能电池的正极连接端子8 模块2连接到第一太阳能电池模块2的正极连接端子4，而最后一个太阳能电池模块2的负极连接端子9连接到负极连接端子 5，从而完成以闭环方式并联连接的太阳能电池模块组1。

公开(公告)号：US07427365B2

公开(公告)日：2008-09-23

申请号：US10578575

申请日：2004-11-05

Applicant: Yoneichi Hirata ,  Tomoya Sakaguchi ,  Nobuyoshi Takeuchi

Inventor： Yoneichi Hirata ,  Tomoya Sakaguchi ,  Nobuyoshi Takeuchi

IPC: C09K11/55

CPC classification number: C09K11/7792

Abstract: A phosphorescent phosphor having excellent afterglow luminance characteristics, even under low illumination intensity of radiation conditions, compared to conventional strontium aluminate phosphorescent phosphors of the same type, and particularly a phosphorescent phosphor having excellent initial afterglow luminance characteristics, with following requirements: 0.015

Abstract translation: 与常规的相同类型的锶铝酸盐磷光体磷光体相比，即使在低的照射强度的辐射条件下，具有优异的余辉亮度特性的磷光体荧光体，特别是具有优异的初始余辉亮度特性的磷光体荧光体，具有以下要求：0.015

公开(公告)号：US20070131907A1

公开(公告)日：2007-06-14

申请号：US10578575

申请日：2004-11-05

Applicant: Yoneichi Hirata ,  Tomoya Sakaguchi ,  Nobuyoshi Takeuchi

Inventor： Yoneichi Hirata ,  Tomoya Sakaguchi ,  Nobuyoshi Takeuchi

IPC: C09K11/77

CPC classification number: C09K11/7792

Abstract: A phosphorescent phosphor having excellent afterglow luminance characteristics, even under low illumination intensity of radiation conditions, compared to conventional strontium aluminate phosphorescent phosphors of the same type, and particularly a phosphorescent phosphor having excellent initial afterglow luminance characteristics, with following requirements: 0.015

Abstract translation: 与常规的相同类型的锶铝酸盐磷光体磷光体相比，即使在低的照射强度的辐射条件下，具有优异的余辉亮度特性的磷光体荧光体，特别是具有优异的初始余辉亮度特性的磷光体荧光体，具有以下要求：0.015

公开(公告)号：US20050248279A1

公开(公告)日：2005-11-10

申请号：US10839804

申请日：2004-05-05

Applicant: Stefaan Lambrechts ,  Nobuyoshi Takeuchi ,  Jakob Maya

Inventor： Stefaan Lambrechts ,  Nobuyoshi Takeuchi ,  Jakob Maya

IPC: H01J17/20 ,  H01J61/12 ,  H01J61/30 ,  H01J61/82

CPC classification number: H01J61/827 ,  H01J61/125 ,  H01J61/302

Abstract: An arc discharge metal halide lamp having a discharge chamber having visible light permeable walls bounding a discharge region supported electrodes in a discharge region spaced apart by a distance Le with an average interior diameter equal to D so they have a selected ratio with D exceeding a minimum value. Ionizable materials are provided in this chamber involving a noble gas, one or more halides, and mercury in an amount sufficiently small so as to result in a relatively low maximum voltage drop between the electrodes during lamp operation for a lamp dissipation sufficient to have the chamber wall loading exceed a minimum value or so as to maintain chamber luminosity above a minimum value for a selected operational duration.

Abstract translation: 一种电弧放电金属卤化物灯，其具有放电室，该放电室具有将平均内径等于D的间隔开距离为L的放电区域中的放电区域支撑的电极限定在其上， D的选择比例超过最小值。 在该室中设置可离子化材料，该惰性气体包含惰性气体，一种或多种卤化物和足够小量的汞，以便在灯操作期间导致电极之间相对较低的最大电压降，足以具有室 壁载荷超过最小值，以便在所选择的操作持续时间内将室内亮度保持在最小值以上。

公开(公告)号：US5940704A

公开(公告)日：1999-08-17

申请号：US890440

申请日：1997-07-09

Applicant: Nobuyoshi Takeuchi

Inventor： Nobuyoshi Takeuchi

IPC: G11C11/56 ,  H01L21/8247 ,  H01L27/115 ,  H01L21/336

CPC classification number: H01L27/11517 ,  G11C11/5621 ,  G11C11/5642 ,  H01L27/115 ,  G11C2211/5634

Abstract: A reference apparatus for determining a current or voltage of a semiconductor device, includes a plurality of reference cells having threshold values different from each other, and a selection circuit for selecting one of the plurality of reference cells. A current flowing in a semiconductor device can be determined by comparing the current flowing in the reference apparatus, with the current flowing in a semiconductor cell by means of a sense amplifier.

Abstract translation: 用于确定半导体器件的电流或电压的参考装置包括具有彼此不同的阈值的多个参考单元，以及用于选择多个参考单元之一的选择电路。 可以通过将参考装置中流动的电流与通过读出放大器在半导体单元中流动的电流进行比较来确定在半导体器件中流动的电流。

公开(公告)号：US5936492A

公开(公告)日：1999-08-10

申请号：US844921

申请日：1997-04-22

Applicant: Masahito Shingyoji ,  Nobuyoshi Takeuchi

Inventor： Masahito Shingyoji ,  Nobuyoshi Takeuchi

IPC: H01L21/60 ,  H01L23/66 ,  H01P1/04 ,  H01P3/08 ,  H01P5/02 ,  H01P5/00

CPC classification number: H01L24/73 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L24/91 ,  H01L2223/6611 ,  H01L2224/45013 ,  H01L2224/45014 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/49175 ,  H01L24/49 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/16195 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111

Abstract: A ribbon and a bonding wire are connected respectively to a high-frequency input and output of a microwave circuit, the width of the ribbon and/or the thickness of the bonding wire being varied continuously or discontinuously at a portion other than a portion used for bonding. By applying the ribbon and bonding wire to a microwave circuit package including a metallic substrate and sealing therein an MMIC mounted to the metallic substrate, desired high-frequency characteristics of the MMIC can be obtained.

Abstract translation: 带子和接合线分别连接到微波电路的高频输入和输出，带的宽度和/或接合线的厚度在除了用于 粘接。 通过将带状物和接合线施加到包括金属基底的微波电路封装并且在其中密封安装到金属基底上的MMIC，可以获得MMIC的期望的高频特性。

公开(公告)号：US5936277A

公开(公告)日：1999-08-10

申请号：US735428

申请日：1996-10-22

Applicant: Nobuyoshi Takeuchi

Inventor： Nobuyoshi Takeuchi

IPC: H01L21/265 ,  H01L21/266 ,  H01L21/336 ,  H01L29/10 ,  H01L29/78 ,  H01L27/088

CPC classification number: H01L29/66659 ,  H01L29/1083 ,  H01L29/7835 ,  H01L21/2652 ,  H01L21/26586 ,  H01L21/266

Abstract: A MOS transistor includes a semiconductor substrate of a first conductivity type having a major surface, a source and drain of a second conductivity type formed on the major surface to define a channel region therebetween, and a gate arranged in the channel region via an insulating film. The MOS transistor includes an impurity-implanted region of the first conductivity type located at a substrate portion which is deeper than the channel region and is shifted to a source side from a region corresponding to the channel region.

Abstract translation: MOS晶体管包括具有主表面的第一导电类型的半导体衬底，形成在主表面上的第二导电类型的源极和漏极以限定其间的沟道区，以及通过绝缘膜布置在沟道区中的栅极 。 MOS晶体管包括位于比沟道区域更深的衬底部分处的第一导电类型的杂质注入区域，并且从对应于沟道区域的区域偏移到源极侧。

公开(公告)号：US5907183A

公开(公告)日：1999-05-25

申请号：US854434

申请日：1997-05-12

Applicant: Nobuyoshi Takeuchi

Inventor： Nobuyoshi Takeuchi

IPC: H01L21/28 ,  H01L21/318 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792

CPC classification number: H01L21/28202 ,  H01L27/115 ,  H01L27/11517 ,  H01L29/42324 ,  H01L29/511 ,  H01L29/518 ,  Y10S438/954

Abstract: A tunnel oxide film is formed on the surface of a p-type silicon substrate, and a floating gate electrode made from a polysilicon film is formed on the surface of the tunnel oxide film. On the surface of the floating gate electrode, a control gate electrode is formed via an NON film formed by sequentially stacking a silicon nitride film, a silicon oxide film, and a silicon nitride film. A side oxide film is formed on the side surfaces of the floating gate electrode and the control gate electrode. Source and drain regions made from an n-type diffused layer are formed on the surfaces of element regions of the silicon substrate on the two sides of the floating gate electrodes.

Abstract translation: 隧道氧化膜形成在p型硅衬底的表面上，并且在隧道氧化膜的表面上形成由多晶硅膜制成的浮栅。 在浮栅电极的表面上，通过依次层叠氮化硅膜，氧化硅膜和氮化硅膜而形成的NON膜来形成控制栅电极。 在浮栅电极和控制栅电极的侧表面上形成侧氧化膜。 源极和漏极区由n型扩散层形成在浮动栅电极两侧的硅衬底的元件区域的表面上。

公开(公告)号：US5512800A

公开(公告)日：1996-04-30

申请号：US274409

申请日：1994-07-13

Applicant: Hideaki Omura ,  Masayuki Wakamiya ,  Munehiro Tabata ,  Nobuyoshi Takeuchi

Inventor： Hideaki Omura ,  Masayuki Wakamiya ,  Munehiro Tabata ,  Nobuyoshi Takeuchi

IPC: H01J61/12 ,  H01J61/20 ,  H01J17/20

CPC classification number: H01J61/125 ,  H01J61/20

Abstract: In a metal halide lamp container 1 sealed with mercury and rare gas, GdX.sub.3, LuX.sub.3, and CsX where halogen is iodine, bromine, or their mixture are sealed in a total weight of 1 mg/cc or more, with the weight of CsX defined within a range of 15% or more to 50% or less of the total halides, and the weight ratio of GdX.sub.3 and LuX.sub.3 is set in a range of 0.1.ltoreq.GdX.sub.3 /LuX.sub.3 .ltoreq.10. In addition to GdX.sub.3, LuX.sub.3, and CsX, at least one of thallium halide and dysprosium halide is added. Or DyX.sub.3, LuX.sub.3, NdX.sub.3, and CsX where halogen is iodine, bromine or their mixture are sealed in the specified total weight, with the weight ratio of CsX defined in the above range.

Abstract translation: 在用汞和稀有气体密封的金属卤化物灯容器1中，卤素为碘的GdX 3，LuX 3和CsX，溴或它们的混合物以总重量为1mg / cc或更大的密封，其中定义了CsX的重量 在总卤化物的15％以上至50％以下的范围内，GdX 3和LuX 3的重量比设定为0.1×GdX3 / LuX3 = 10的范围。 除了GdX3，LuX3和CsX之外，加入卤化铊和卤化镝中的至少一种。 或其中卤素为碘，溴或其混合物的DyX3，LuX3，NdX3和CsX以规定的总重量密封，其中CsX的重量比限定在上述范围内。

公开(公告)号：US5394154A

公开(公告)日：1995-02-28

申请号：US120024

申请日：1993-09-10

Applicant: Hiroshi Uematsu ,  Hiroyuki Ando ,  Tsutomu Yoneyama ,  Nobuyoshi Takeuchi ,  Shigeki Kato

Inventor： Hiroshi Uematsu ,  Hiroyuki Ando ,  Tsutomu Yoneyama ,  Nobuyoshi Takeuchi ,  Shigeki Kato

IPC: G01S7/03 ,  G01S7/35 ,  G01S13/34 ,  H03B9/14 ,  H03C3/22 ,  H03B7/14

CPC classification number: H03B9/141 ,  G01S7/032 ,  G01S13/34 ,  G01S7/35 ,  H03B2009/126 ,  H03C3/22

Abstract: A radar module includes a high-frequency signal generator comprising upper and lower parallel conductive plates, at least one dielectric rod held between the parallel conductive plates, a metal diode mount held between the parallel conductive plates, a gunn diode member mounted on a side of the diode mount, and a printed-circuit board mounted on the side of the diode mount in covering relationship to the gunn diode member and having a bias supply circuit on its surface for supplying a bias voltage to the gunn diode member. One terminal of the gunn diode member extends through a through hole defined in the printed-circuit board, is exposed in the vicinity of the surface of the diode mount, and is connected to the bias supply circuit. The printed-circuit board has a rectangular metal pattern dimensionally adjustable for adjusting the oscillation frequency of the gunn diode member, and a varactor diode for modulating the frequency of a signal generated by the gunn diode member so that the high-frequency signal generator can function as an FM signal generator.

Abstract translation: 雷达模块包括高频信号发生器，其包括上和下平行导电板，保持在平行导电板之间的至少一个介电棒，保持在平行导电板之间的金属二极管座，安装在 二极管安装件和安装在二极管安装件一侧的印刷电路板，与二极管构件的覆盖关系，并在其表面上具有用于向喷枪二极管构件提供偏置电压的偏置电源电路。 喷枪二极管部件的一个端子延伸穿过限定在印刷电路板中的通孔，暴露在二极管安装件的表面附近，并连接到偏置电源电路。 印刷电路板具有尺寸可调的矩形金属图案，用于调节二极管构件的振荡频率，以及变容二极管，用于调制由二极管构件产生的信号的频率，使得高频信号发生器可以起作用 作为FM信号发生器。