公开(公告)号：US09601375B2

公开(公告)日：2017-03-21

申请号：US14697391

申请日：2015-04-27

申请人： Wei-Sheng Lei ,  Brad Eaton ,  Jungrae Park ,  Ajay Kumar ,  James S. Papanu ,  Prabhat Kumar

发明人： Wei-Sheng Lei ,  Brad Eaton ,  Jungrae Park ,  Ajay Kumar ,  James S. Papanu ,  Prabhat Kumar

IPC分类号： H01L21/301 ,  H01L21/46 ,  H01L21/78 ,  H01L21/447 ,  H01L21/48 ,  H01L21/50 ,  H01L21/308 ,  H01L21/3065 ,  H01L21/268 ,  H01L21/67 ,  H01L21/683

CPC分类号： H01L21/78 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/67069 ,  H01L21/67207 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381

摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits on a front side of the semiconductor wafer includes adhering a back side the semiconductor wafer on the dicing tape of a substrate carrier. Subsequent to adhering the semiconductor wafer on a dicing tape, the dicing tape is treated with a UV-cure process. Subsequent to treating the dicing tape with the UV-cure process, a dicing mask is formed on the front side of the semiconductor wafer, the dicing mask covering and protecting the integrated circuits. The dicing mask is patterned with a laser scribing process to provide gaps in the dicing mask, the gaps exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is plasma etched through the gaps in the dicing mask layer to singulate the integrated circuits.

公开(公告)号：US09349648B2

公开(公告)日：2016-05-24

申请号：US14337810

申请日：2014-07-22

申请人： Wei-Sheng Lei ,  Prabhat Kumar ,  Jungrae Park ,  Brad Eaton ,  Ajay Kumar

发明人： Wei-Sheng Lei ,  Prabhat Kumar ,  Jungrae Park ,  Brad Eaton ,  Ajay Kumar

IPC分类号： H01L21/00 ,  H01L21/822 ,  H01L21/02 ,  H01L21/033 ,  H01L21/67

CPC分类号： H01L21/822 ,  B23K26/0732 ,  B23K26/364 ,  B23K2103/56 ,  H01L21/02057 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3081 ,  H01L21/31105 ,  H01L21/32131 ,  H01L21/67069 ,  H01L21/67207 ,  H01L21/78

摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a top hat laser beam profile laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

摘要翻译： 对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。 在一个例子中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成掩模，该掩模由覆盖并保护集成电路的层组成。 然后用顶帽激光束轮廓激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露集成电路之间的半导体晶片的区域。 然后通过图案化掩模中的间隙对半导体晶片进行等离子体蚀刻，以对集成电路进行分离。

公开(公告)号：US09187802B2

公开(公告)日：2015-11-17

申请号：US12915781

申请日：2010-10-29

申请人： Paul R. Aimone ,  Prabhat Kumar

发明人： Paul R. Aimone ,  Prabhat Kumar

IPC分类号： C22B9/22 ,  C22B9/16 ,  C22B9/00 ,  C22B34/24 ,  C22B34/20 ,  C22C27/02

CPC分类号： C22B34/24 ,  C22B9/20 ,  C22B9/226 ,  C22B9/228 ,  C22C27/02

摘要： A niobium or niobium alloy which contains pure or substantially pure niobium and at least one metal element selected from the group consisting of Ru, Rh, Pd, Os, Ir, Pt, Mo, W and Re to form a niobium alloy that is resistant to aqueous corrosion. The invention also relates to the process of preparing the niobium alloy.

摘要翻译： 一种铌或铌合金，其含有纯的或基本上纯的铌和至少一种选自Ru，Rh，Pd，Os，Ir，Pt，Mo，W和Re的金属元素，以形成铌合金， 含水腐蚀。 本发明还涉及制备铌合金的方法。

公开(公告)号：US20150221505A1

公开(公告)日：2015-08-06

申请号：US14658102

申请日：2015-03-13

申请人： Jungrae Park ,  Wei-Sheng Lei ,  Prabhat Kumar ,  James S. Papanu ,  Brad Eaton ,  Ajay Kumar

发明人： Jungrae Park ,  Wei-Sheng Lei ,  Prabhat Kumar ,  James S. Papanu ,  Brad Eaton ,  Ajay Kumar

IPC分类号： H01L21/02 ,  H01L21/683 ,  H01L21/308 ,  B05B3/10 ,  B05B1/00

CPC分类号： H01L21/02282 ,  B05B1/00 ,  B05B3/1014 ,  B05B3/1035 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/6715 ,  H01L21/6835 ,  H01L21/78 ,  H01L2221/68327

摘要： Improved wafer coating processes, apparatuses, and systems are described. In one embodiment, an improved spin-coating process and system is used to form a mask for dicing a semiconductor wafer with a laser plasma dicing process. In one embodiment, a spin-coating apparatus for forming a film over a semiconductor wafer includes a rotatable stage configured to support the semiconductor wafer. The rotatable stage has a downward sloping region positioned beyond a perimeter of the semiconductor wafer. The apparatus includes a nozzle positioned above the rotatable stage and configured to dispense a liquid over the semiconductor wafer. The apparatus also includes a motor configured to rotate the rotatable stage.

摘要翻译： 描述了改进的晶片涂布工艺，装置和系统。 在一个实施例中，改进的旋涂工艺和系统用于形成用激光等离子体切割工艺切割半导体晶片的掩模。 在一个实施例中，用于在半导体晶片上形成膜的旋涂装置包括被配置为支撑半导体晶片的可旋转台。 可旋转台具有位于半导体晶片周边之外的向下倾斜区域。 该设备包括位于可旋转台上方并被配置为在半导体晶片上分配液体的喷嘴。 该装置还包括构造成旋转可旋转台的马达。

公开(公告)号：US20130233379A1

公开(公告)日：2013-09-12

申请号：US13784043

申请日：2013-03-04

申请人： David Tanner ,  Prabhat Kumar

发明人： David Tanner ,  Prabhat Kumar

IPC分类号： H01L31/18 ,  H01L31/0224

CPC分类号： H01L31/1868 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022433 ,  H01L31/068 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

摘要： Embodiments of the invention generally relate to solar cells having reduced carrier recombination and methods of forming the same. The solar cells have eutectic local contacts and passivation layers which reduce recombination by facilitating formation of a back surface field (BSF). A patterned aluminum back contact is disposed on the passivation layer for removing current form the solar cell. The patterned back contact reduces the cost-per-watt of the solar cell by using less material than a full-surface back contact. The methods of forming the solar cells include depositing a passivation layer including aluminum oxide and silicon nitride on a back surface of a solar cell, and then forming openings through the passivation layer. A patterned aluminum back contact is disposed on the passivation layer over the holes, and thermally processed to form a silicon-aluminum eutectic within the openings.

摘要翻译： 本发明的实施方案通常涉及具有减少的载体重组的太阳能电池及其形成方法。 太阳能电池具有共晶的局部接触和钝化层，通过促进背面场（BSF）的形成来减少复合。 图案化的铝背接触设置在钝化层上以去除太阳能电池的电流。 图案化的背面接触通过使用比全表面背面接触更少的材料来降低太阳能电池的每瓦成本。 形成太阳能电池的方法包括在太阳能电池的背面上沉积包括氧化铝和氮化硅的钝化层，然后通过钝化层形成开口。 图案化的铝背接触器设置在孔上的钝化层上，并且被热处理以在开口内形成硅铝共晶体。

公开(公告)号：US07754185B2

公开(公告)日：2010-07-13

申请号：US11334140

申请日：2006-01-18

申请人： Lawrence F. McHugh ,  Prabhat Kumar ,  David Meendering ,  Richard Wu ,  Gerhard Wötting ,  Richard Nicholson

发明人： Lawrence F. McHugh ,  Prabhat Kumar ,  David Meendering ,  Richard Wu ,  Gerhard Wötting ,  Richard Nicholson

IPC分类号： C01G39/02 ,  B22F3/15

CPC分类号： C01G39/02 ,  C01P2006/10 ,  C01P2006/12 ,  C01P2006/40 ,  H01L51/5206

摘要： The invention relates to high purity MoO2 powder by reduction of ammonium molybdate or molybdenum trioxide using hydrogen as the reducing agent in a rotary or boat furnace. Consolidation of the powder by press/sintering, hot pressing, and/or HIP is used to make discs, slabs, or plates, which are used as sputtering targets. The MoO2 disc, slab, or plate form is sputtered on a substrate using a suitable sputtering method or other physical means to provide a thin film having a desired film thickness. The thin films have properties such as electrical, optical, surface roughness, and uniformity comparable or superior to those of indium-tin oxide (ITO) and zinc-doped ITO in terms of transparency, conductivity, work function, uniformity, and surface roughness. The MoO2 and MoO2 containing thin films can be used in organic light-emitting diodes (OLED), liquid crystal display (LCD), plasma display panel (PDP), field emission display (FED), thin film solar cell, low resistivity ohmic contacts, and other electronic and semiconductor devices.

摘要翻译： 本发明涉及通过在旋转或船式炉中使用氢作为还原剂还原钼酸铵或三氧化钼的高纯度MoO 2粉末。 使用通过压制/烧结，热压和/或HIP将粉末固结制成用作溅射靶的盘，板或板。 使用合适的溅射方法或其它物理方法将MoO 2盘，板或板形式溅射在基板上，以提供具有所需膜厚度的薄膜。 在透明性，导电性，功函数，均匀性和表面粗糙度方面，薄膜具有与铟锡氧化物（ITO）和掺杂锌的ITO相当或优于电，光学，表面粗糙度和均匀性的性质。 含有MoO2和MoO2的薄膜可用于有机发光二极管（OLED），液晶显示器（LCD），等离子体显示面板（PDP），场发射显示器（FED），薄膜太阳能电池，低电阻率欧姆接触 ，以及其他电子和半导体器件。

公开(公告)号：US20070071985A1

公开(公告)日：2007-03-29

申请号：US11238366

申请日：2005-09-29

申请人： Prabhat Kumar ,  Gerhard Woetting ,  Rong-Chein Wu

发明人： Prabhat Kumar ,  Gerhard Woetting ,  Rong-Chein Wu

IPC分类号： C04B35/01

CPC分类号： C23C14/28 ,  C04B35/01 ,  C04B35/111 ,  C04B35/453 ,  C04B35/457 ,  C04B35/495 ,  C04B35/6261 ,  C04B35/645 ,  C04B2235/3256 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/77 ,  C23C14/0021 ,  C23C14/086

摘要： The present invention is directed to a composition consisting essentially of: a) from about 0.1 to about 60 mole % of MoO2, b) from 0 to about 99.9 mole % of In2O3, c) from 0 to about 99.9 mole % of SnO2, d) from 0 to about 99.9 mole % of ZnO, e) from 0 to about 99.9 mole % of Al2O3, f) from 0 to about 99.9 mole % of Ga2O3, wherein the sum of components b) through f) is from about 40 to about 99.9 mole %, and wherein the mole %s are based on the total product and wherein the sum of components a) through e) is 100. The invention is also directed to the sintered product of such composition, a sputtering target made from the sintered product and a transparent electroconductive film made from the composition.

摘要翻译： 本发明涉及一种组合物，其基本上由以下组成：a）约0.1至约60摩尔％的MoO 2 2，b）0至约99.9摩尔％的In 2， c）0至约99.9摩尔％的SnO 2，d）0至约99.9摩尔％的ZnO，e）0至约3摩尔％ 99.9摩尔％的Al 2 O 3，f）0至约99.9摩尔％的Ga 2 O 3 3 / 其中组分b）至f）的总和为约40至约99.9摩尔％，并且其中摩尔％s基于总产物，其中组分a）至e）的总和为100.本发明 还涉及这种组合物的烧结产品，由烧结产品制成的溅射靶和由该组合物制成的透明导电膜。

公开(公告)号：US06593532B1

公开(公告)日：2003-07-15

申请号：US09685185

申请日：2000-10-11

申请人： Howard V. Goldberg ,  Prabhat Kumar ,  Thomas Ryan

发明人： Howard V. Goldberg ,  Prabhat Kumar ,  Thomas Ryan

IPC分类号： H01B700

CPC分类号： H01G9/012 ,  H01B1/02 ,  H01G9/048

摘要： Electrolytic capacitor lead wires doped with one or more interstitial elements at the surface to enhance (lower) leakage of capacitors using such lead wires.

摘要翻译： 在表面掺杂有一个或多个间隙元素的电解电容器引线，以增强（较低）使用这种引线的电容器的泄漏。

公开(公告)号：US5580516A

公开(公告)日：1996-12-03

申请号：US475018

申请日：1995-06-07

申请人： Prabhat Kumar

发明人： Prabhat Kumar

IPC分类号： C22B34/24 ,  C22C1/04 ,  B22F1/00

CPC分类号： C22C1/045 ,  C22B34/24

摘要： A powder of tantalum, niobium, or an alloy thereof, having an oxygen content less than about 300 ppm, and the production thereof without exposure to a temperature greater than about 0.7 T.sub.H. A powder metallurgy formed product of tantalum, niobium, or an alloy thereof, having an oxygen content less than about 300 ppm, and the production thereof without exposure to a temperature greater than about 0.7 T.sub.H.

摘要翻译： 氧含量小于约300ppm的钽，铌或其合金粉末，其暴露于大于约0.7TH的温度下的生产。 其氧含量小于约300ppm的钽，铌或其合金的粉末冶金成型产品，其生产没有暴露于大于约0.7TH的温度。

公开(公告)号：US4561892A

公开(公告)日：1985-12-31

申请号：US617010

申请日：1984-06-05

申请人： Prabhat Kumar ,  Vidhu Anand

发明人： Prabhat Kumar ,  Vidhu Anand

IPC分类号： C22C19/00 ,  C23C4/06 ,  C23C4/12 ,  C22C19/03 ,  C22C19/07

CPC分类号： C23C4/06 ,  Y10T428/12063

摘要： Disclosed is a coated substrate article coated with an alloy powder containing, in weight percent, 7 to 19 silicon, up to 5 copper balance nickel, cobalt and/or iron plus impurities. The articles may be coated by a variety of spray coating processes; however, plasma spray coating is preferred. The coated article is especially suited for use in severe conditions of wet corrosion.

摘要翻译： 公开了涂覆有合金粉末的涂覆的基材制品，其中重量百分比为7至19个硅，至多5个铜平衡镍，钴和/或铁加杂质。 制品可以通过各种喷涂工艺涂覆; 然而，优选等离子喷涂。 涂层制品特别适用于恶劣条件下的湿润腐蚀。