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    Use of polybenzoxazoles (PBOS) for adhesion
    42.
    发明授权
    Use of polybenzoxazoles (PBOS) for adhesion 有权

    公开(公告)号：US07052936B2

    公开(公告)日：2006-05-30

    申请号：US10208397

    申请日：2002-07-30

    Applicant: Andreas Walter ,  Recai Sezi

    Inventor： Andreas Walter ,  Recai Sezi

    IPC: H01L21/44 ,  H01L21/48 ,  H01L21/50

    CPC classification number: C09J179/06

    Abstract: The present invention describes the use of polybenzoxazoles (PBOs) for adhesively bonding articles or materials, especially components used in the semiconductor industry, such as chips and wafers, a process for adhesively bonding materials, especially chips and wafers, chip and/or wafer stacks produced by the process, and adhesive compositions which comprise the polybenzoxazoles of the formula (I).

    Microelectronic process and structure
    44.
    发明授权
    Microelectronic process and structure 失效
    微电子工艺与结构

    公开(公告)号：US07022582B2

    公开(公告)日：2006-04-04

    申请号：US10631587

    申请日：2003-07-31

    Applicant: Recai Sezi

    Inventor： Recai Sezi

    IPC: H01L21/76 ,  H01L21/4763

    CPC classification number: H01L21/0212 ,  H01L21/02118 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/31116 ,  H01L21/312 ,  H01L21/7682 ,  H01L21/76841

    Abstract: The present invention relates to a process for integrating air as dielectric in semiconductor devices, comprising the steps of: a. applying a layer of a dielectric (2) which is to be patterned to a substrate (1); b. patterning the dielectric layer (2) which has been applied; c. applying a conductor metal (3) for the patterned dielectric layer (2) and forming a common surface from the conductor metal (3) and the dielectric (2); d. applying a layer of an organic dielectric (4) to the layer produced in step c.; and e. bringing the coated substrate produced in this way into contact with a fluorine-containing compound in order to form an arrangement which has air as dielectric between conductor structures and has a continuous dielectric layer (4) on the top side, and to a semiconductor device with air layers as dielectric produced using this process.

    Abstract translation: 本发明涉及将空气作为电介质集成在半导体器件中的方法，包括以下步骤：a。 将待图案化的电介质层（2）施加到衬底（1）上; b。 图案化已经施加的介电层（2）; C。 对所述图案化电介质层（2）施加导体金属（3）并从所述导体金属（3）和所述电介质（2）形成公共表面; d。 将一层有机电介质（4）施加到步骤c中制备的层; 和e。 将以这种方式制造的涂布基材与含氟化合物接触，以形成在导体结构之间具有作为电介质的空气的布置，并且在顶侧具有连续的电介质层（4），并且具有 空气层作为使用该方法产生的电介质。

    O-amino(thio)phenolcarboxylic acids, and their preparation
    46.
    发明授权
    O-amino(thio)phenolcarboxylic acids, and their preparation 有权
    O-氨基（硫代）苯酚羧酸及其制备方法

    公开(公告)号：US06310238B1

    公开(公告)日：2001-10-30

    申请号：US09161147

    申请日：1998-09-24

    Applicant: Recai Sezi ,  Michael Keitmann

    Inventor： Recai Sezi ,  Michael Keitmann

    IPC: C07C22910

    CPC classification number: C07D213/643 ,  C07C69/92 ,  C07C217/90

    Abstract: The invention relates to novel o-aminophenolcarboxylic acids or o-aminothiophenolcarboxylic acids of the following structure in which: A1 to A7 are—independently of one another—H, CH3, OCH3, CH2CH3 or OCH2CH3; T is O or S, and m is 0 or 1; Z is a carbocyclic or heterocyclic aromatic radical.

    Abstract translation: 本发明涉及以下结构的新型邻氨基苯甲酸或邻氨基苯硫酚羧酸，其中：A 1至A 7彼此独立地为H，CH 3，OCH 3，CH 2 CH 3或OCH 2 CH 3; T为O或S，m为0 或1; Z是碳环或杂环芳族基团。

    Polybenzoxazole and polybenzothiazole precursors
    47.
    发明授权
    Polybenzoxazole and polybenzothiazole precursors 有权
    聚苯并恶唑和聚苯并噻唑前体

    公开(公告)号：US6120970A

    公开(公告)日：2000-09-19

    申请号：US161202

    申请日：1998-09-25

    Applicant: Recai Sezi ,  Michael Keitmann

    Inventor： Recai Sezi ,  Michael Keitmann

    IPC: G03F7/032 ,  C08G69/32 ,  C08G69/42 ,  C08G73/22 ,  C08G75/32 ,  G03F7/023 ,  G03C1/52 ,  C08G69/00

    CPC classification number: C08G75/32 ,  C08G73/22 ,  G03F7/0233

    Abstract: The polybenzoxazole and polybenzothiazole precursors of the invention have the following partial structure: ##STR1## where: A.sup.1 to A.sup.7 are--independently of one another--H, F, CH.sub.3, CF.sub.3, OCH.sub.3, OCF.sub.3, CH.sub.2 CH.sub.3, CF.sub.2 CF.sub.3, OCH.sub.2 CH.sub.3 or OCF.sub.2 CF.sub.3 ;T is O or S, and m is 1;Z is a carbocyclic or heterocyclic aromatic radical.

    Abstract translation: 本发明的聚苯并恶唑和聚苯并噻唑前体具有以下部分结构：其中：A 1至A 7彼此独立地为-H，F，CH 3，CF 3，OCH 3，OCF 3，CH 2 CH 3，CF 2 CF 3，OCH 2 CH 3或OCF 2 CF 3; T为O或S，m为1; Z是碳环或杂环芳族基团。

    Methods for producing polybenzoxazol precursors and corresponding resist solutions
    49.
    发明授权
    Methods for producing polybenzoxazol precursors and corresponding resist solutions 失效
    聚苯并恶唑前体和相应抗蚀剂溶液的制备方法

    公开(公告)号：US5688631A

    公开(公告)日：1997-11-18

    申请号：US618488

    申请日：1996-03-19

    Applicant: Recai Sezi ,  Hellmut Ahne ,  Eva Rissel

    Inventor： Recai Sezi ,  Hellmut Ahne ,  Eva Rissel

    IPC: G03F7/022 ,  C08G73/22 ,  G03F7/023 ,  G03F7/037 ,  G03F7/039 ,  G03C1/492

    CPC classification number: C08G73/22 ,  G03F7/0233

    Abstract: Methods for producing solutions of polybenzoxazol precursors that are soluble in alkali and resist solutions based on such precursors. A dicarboxylic acid halogenide is reacted with a bis-(o-aminophenol) in an organic solvent and in the presence of a polymer with a tertiary N atom, which is insoluble in the solvent. Excess polymer and hydrohalogenide are separated from the reaction solution. The reaction solution is optionally mixed with a photoactive component.

    Abstract translation: 用于生产溶于碱的聚苯并恶唑前体溶液的方法和基于这些前体的抗溶液。 二羧酸卤化物与双 - （邻氨基苯酚）在有机溶剂中和在不溶于溶剂的叔N原子的存在下反应。 从反应溶液中分离出过量的聚合物和氢卤化物。 反应溶液任选地与光活性组分混合。

    Photostructuring process
    50.
    发明授权
    Photostructuring process 失效
    照片制作过程

    公开(公告)号：US5250375A

    公开(公告)日：1993-10-05

    申请号：US812585

    申请日：1991-12-20

    Applicant: Michael Sebald ,  Juergen Beck ,  Rainer Leuschner ,  Recai Sezi ,  Siegfried Birkle ,  Hellmut Ahne ,  Eberhard Kuehn

    Inventor： Michael Sebald ,  Juergen Beck ,  Rainer Leuschner ,  Recai Sezi ,  Siegfried Birkle ,  Hellmut Ahne ,  Eberhard Kuehn

    IPC: G03F7/26 ,  G03F7/039 ,  G03F7/40 ,  H01L21/027 ,  G03C5/58

    CPC classification number: G03F7/40 ,  G03F7/039 ,  G03F7/405

    Abstract: A process for producing structures in the submicron range is characterized by the following steps:a photoresist layer comprising a polymer constituent with functional groups, which are capable of reacting with primary or secondary amines, and N-blocked imide groups, a photoinitiator which releases an acid when irradiated and a suitable solvent is deposited on to a substrate;the photoresist layer is dried;the photoresist layer is exposed in an imagewise manner;the exposed photoresist layer is subjected to a temperature treatment;the photoresist layer treated in this manner is developed with an aqueous-alkaline or organic developing agent into a photoresist structure; andthe photoresist structure is treated with a chemical agent containing a primary or secondary amine; a defined dark field loss, is adjusted thereby during development in the range of between 20 and 100 nm.

    Abstract translation: 在亚微米范围内制造结构的方法的特征在于以下步骤：包含能与伯胺或仲胺反应的官能团的聚合物组分和N-封端的酰亚胺基的光致抗蚀剂层， 酸，并将合适的溶剂沉积在基材上; 干燥光致抗蚀剂层; 光致抗蚀剂层以成像方式曝光; 曝光的光刻胶层进行温度处理; 以这种方式处理的光致抗蚀剂层用含水碱性或有机显影剂显影成光致抗蚀剂结构; 并且用含有伯胺或仲胺的化学试剂处理光刻胶结构; 在20至100nm的范围内，在显影期间调节限定的暗场损耗。

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