Light-emitting element and light-emitting diode

    公开(公告)号:US10438992B2

    公开(公告)日:2019-10-08

    申请号:US15409306

    申请日:2017-01-18

    摘要: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.

    WAFER LEVEL LIGHT-EMITTING DIODE ARRAY
    45.
    发明申请

    公开(公告)号:US20180108704A1

    公开(公告)日:2018-04-19

    申请号:US15835326

    申请日:2017-12-07

    IPC分类号: H01L27/15

    摘要: A light emitting diode array is provide to include: a substrate; light emitting diodes positioned over the substrate, each including a first semiconductor layer, an active layer, and a second semiconductor layer, wherein each light emitting diode is disposed to form a first via hole structure exposing a portion of the corresponding first semiconductor layer; lower electrodes disposed over the second semiconductor layer; a first interlayer insulating layer disposed over the lower electrodes and configured to expose the portion of the first semiconductor layer of corresponding light emitting diodes; upper electrodes electrically connected to the first semiconductor layer through the first via hole structure, wherein the first via hole structure is disposed in parallel with one side of the corresponding second semiconductor layer and the first interlayer insulating layer is disposed to form a second via hole structure exposing a portion of the lower electrodes.

    WAFER LEVEL LIGHT-EMITTING DIODE ARRAY
    49.
    发明申请

    公开(公告)号:US20160211410A1

    公开(公告)日:2016-07-21

    申请号:US15081134

    申请日:2016-03-25

    IPC分类号: H01L33/08 H01L33/38 H01L33/62

    摘要: A light emitting diode array is provide to include: a substrate; light emitting diodes positioned over the substrate, each including a first semiconductor layer, an active layer, and a second semiconductor layer, wherein each light emitting diode is disposed to form a first via hole structure exposing a portion of the corresponding first semiconductor layer; lower electrodes disposed over the second semiconductor layer; a first interlayer insulating layer disposed over the lower electrodes and configured to expose the portion of the first semiconductor layer of corresponding light emitting diodes; upper electrodes electrically connected to the first semiconductor layer through the first via hole structure, wherein the first via hole structure is disposed in parallel with one side of the corresponding second semiconductor layer and the first interlayer insulating layer is disposed to form a second via hole structure exposing a portion of the lower electrodes.

    LIGHT EMITTING DIODE, METHOD OF FABRICATING THE SAME AND LED MODULE HAVING THE SAME
    50.
    发明申请
    LIGHT EMITTING DIODE, METHOD OF FABRICATING THE SAME AND LED MODULE HAVING THE SAME 有权
    发光二极管,其制造方法和具有该发光二极管的LED模块

    公开(公告)号:US20160111600A1

    公开(公告)日:2016-04-21

    申请号:US14985162

    申请日:2015-12-30

    IPC分类号: H01L33/38 H01L33/24 H01L33/40

    摘要: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.

    摘要翻译: 提供发光二极管以包括第一导电型半导体层; 包括设置在第一导电型半导体层上的第二导电型半导体层和介于第一和第二导电型半导体层之间的有源层的台面; 以及设置在所述台面上的第一电极,其中所述第一导电型半导体层包括沿所述第一导电型半导体层的外周设置在所述台面周围的第一接触区域; 以及至少部分地被所述台面包围的第二接触区域,所述第一电极电连接到所述第一接触区域的至少一部分和所述第二接触区域的至少一部分,以及所述第一接触区域的所述第一接触区域之间的相邻区域的线宽 接触区域和第一电极大于第二接触区域和第一电极之间的邻接区域的线宽。