公开(公告)号：US09461091B2

公开(公告)日：2016-10-04

申请号：US14551808

申请日：2014-11-24

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Yeo Jin Yoon ,  Jong Kyu Kim ,  Jun Hee Lee

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/38 ,  H01L33/62

CPC classification number: H01L27/15 ,  H01L27/156 ,  H01L33/385 ,  H01L33/387 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: AC LED according to the present invention comprises a substrate, and at least one serial array having a plurality of light emitting cells connected in series on the substrate. Each of the light emitting cells comprises a lower semiconductor layer consisting of a first conductive compound semiconductor layer formed on top of the substrate, an upper semiconductor layer consisting of a second conductive compound semiconductor layer formed on top of the lower semiconductor layer, an active layer interposed between the lower and upper semiconductor layers, a lower electrode formed on the lower semiconductor layer exposed at a first corner of the substrate, an upper electrode layer formed on the upper semiconductor layer, and an upper electrode pad formed on the upper electrode layer exposed at a second corner of the substrate. The upper electrode pad and the lower electrode are respectively disposed at the corners diagonally opposite to each other, and the respective light emitting cells are arranged so that the upper electrode pad and the lower electrode of one of the light emitting cells are symmetric with respect to those of adjacent another of the light emitting cells.

Abstract translation: 根据本发明的AC LED包括衬底和至少一个具有串联连接在衬底上的多个发光单元的串联阵列。 每个发光单元包括由形成在基板顶部上的第一导电化合物半导体层构成的下半导体层，由形成于下半导体层顶部的第二导电化合物半导体层构成的上半导体层，活性层 介于下半导体层和上半导体层之间的下电极，形成在衬底的第一角上露出的下半导体层上的下电极，形成在上半导体层上的上电极层和形成在上电极层上的上电极焊盘 在基片的第二个角落。 上电极焊盘和下电极分别设置在彼此对角相对的角上，并且各发光单元被布置成使得一个发光单元的上电极焊盘和下电极相对于 相邻另一个发光单元的那些。

公开(公告)号：US20160218096A1

公开(公告)日：2016-07-28

申请号：US14991829

申请日：2014-07-10

Applicant: SEOUL VIOSYS CO., LTD

Inventor： Seom Geun Lee ,  Yeo Jin Yoon ,  Jae Kwon Kim ,  So Ra Lee ,  Myoung Hak Yang

IPC: H01L27/02 ,  H01L25/16 ,  H01L33/40 ,  H01L33/62 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L27/0255 ,  H01L25/167 ,  H01L27/15 ,  H01L33/06 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed herein is a light emitting diode chip having ESD protection. An exemplary embodiment provides a flip-chip type light emitting diode chip, which includes a light emitting diode part aligned on a substrate, and a reverse-parallel diode part disposed on the substrate and connected to the light emitting diode part. Within the flip-chip type light emitting diode chip, the light emitting diode part is placed together with reverse-parallel diode part, thereby providing a light emitting diode chip exhibiting strong resistance to electrostatic discharge.

Abstract translation: 这里公开了具有ESD保护的发光二极管芯片。 示例性实施例提供了一种倒装芯片型发光二极管芯片，其包括在基板上对准的发光二极管部件和设置在基板上并连接到发光二极管部件的反并联二极管部件。 在倒装芯片型发光二极管芯片内，发光二极管部分与反并联二极管部分一起放置，从而提供显示出对静电放电具有很强抵抗力的发光二极管芯片。

公开(公告)号：US09337175B2

公开(公告)日：2016-05-10

申请号：US14229773

申请日：2014-03-28

Applicant: Seoul Viosys Co., Ltd.

Inventor： Won Cheol Seo ,  Joon Hee Lee ,  Jong Kyun You ,  Chang Youn Kim ,  Jin Cheul Shin ,  Hwa Mok Kim ,  Jang Woo Lee ,  Yeo Jin Yoon ,  Jong Kyu Kim

IPC: H01L25/075 ,  H01L27/15 ,  H01L33/62 ,  H01L33/00 ,  H01L33/46

CPC classification number: H01L33/60 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A light emitting device and a method of fabricating the same. The light emitting device includes a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells includes a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.

Abstract translation: 发光器件及其制造方法。 发光器件包括衬底。 多个发光单元设置在基板的顶部上以彼此间隔开。 每个发光单元包括第一上半导体层，有源层和第二下半导体层。 反射金属层位于基板和发光单元之间。 防止反射金属层暴露于外部。

公开(公告)号：US20160118564A1

公开(公告)日：2016-04-28

申请号：US14984829

申请日：2015-12-30

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang Hyun Oh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong ,  Sang Won Woo

IPC: H01L33/62 ,  H01L33/32 ,  H01L33/24 ,  H01L33/14 ,  H01L33/52

CPC classification number: H01L33/36 ,  H01L33/08 ,  H01L33/145 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62

Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

公开(公告)号：US20160087003A1

公开(公告)日：2016-03-24

申请号：US14958253

申请日：2015-12-03

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Lam Lee ,  Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Dae Won Kim

IPC: H01L27/15 ,  H01L33/62

CPC classification number: H01L27/15 ,  H01L27/153 ,  H01L27/3281 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/28 ,  H01L33/32 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L51/5253 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and the second semiconductors, a conductive material on the second semiconductor layer, an inclined surface, a first insulation layer overlaps each light emitting cell, an electrically conductive material overlaps the first insulation layer to couple two of the plurality of light emitting cells, and a second insulation layer overlaps the electrically conductive material. A light-transmitting material is used in both the first insulation layer and the second insulation layer. The inclined surface is continuous and has a slope of approximately 20° to approximately 80° from a horizontal plane based on the substrate.

Abstract translation: 发光器件包括衬底和设置在衬底上的多个发光单元。 每个发光单元包括第一半导体层和第二半导体层，第一和第二半导体之间的有源层，第二半导体层上的导电材料，倾斜表面，与每个发光单元重叠的第一绝缘层， 导电材料与第一绝缘层重叠以耦合多个发光单元中的两个，并且第二绝缘层与导电材料重叠。 在第一绝缘层和第二绝缘层中都使用透光材料。 倾斜表面是连续的，并且具有基于基底的水平面大约20°至大约80°的斜率。

公开(公告)号：US09287462B2

公开(公告)日：2016-03-15

申请号：US14791824

申请日：2015-07-06

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seom Geun Lee ,  Jong Kyu Kim ,  Yeo Jin Yoon ,  Jae Kwon Kim ,  Mae Yi Kim

IPC: H01L29/18 ,  H01L33/42 ,  H01L33/62 ,  H01L27/15 ,  H01L33/08 ,  H01L33/46 ,  H01L33/14 ,  H01L33/44

CPC classification number: H01L27/15 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/08 ,  H01L33/10 ,  H01L33/14 ,  H01L33/145 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

Abstract: An exemplary embodiment discloses a light emitting diode including a first light emitting cell and a second light emitting cell disposed on a substrate, the first light emitting cell and the second light emitting cell being spaced apart from each other. The light emitting diode also includes a first zinc oxide (ZnO) layer disposed on the first light emitting cell, the first ZnO layer being electrically connected to the first light emitting cell. The light emitting diode also includes a current blocking layer disposed between a portion of the first light emitting cell and the first ZnO layer, an interconnection electrically connecting the first light emitting cell and the second light emitting cell, and an insulation layer disposed between the interconnection and a side surface of the first light emitting cell. The current blocking layer and a first side of insulation layer are connected to each other.

Abstract translation: 示例性实施例公开了一种包括第一发光单元和设置在基板上的第二发光单元的发光二极管，第一发光单元和第二发光单元彼此间隔开。 发光二极管还包括设置在第一发光单元上的第一氧化锌（ZnO）层，第一ZnO层电连接到第一发光单元。 发光二极管还包括设置在第一发光单元的一部分和第一ZnO层之间的电流阻挡层，电连接第一发光单元和第二发光单元的互连以及设置在互连之间的绝缘层 和第一发光单元的侧面。 电流阻挡层和绝缘层的第一侧彼此连接。

公开(公告)号：US09093627B2

公开(公告)日：2015-07-28

申请号：US14135925

申请日：2013-12-20

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seom Geun Lee ,  Jong Kyu Kim ,  Yeo Jin Yoon ,  Jae Kwon Kim ,  Mae Yi Kim

IPC: H01L33/00 ,  H01L33/62 ,  H01L27/15 ,  H01L33/14

CPC classification number: H01L27/15 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/08 ,  H01L33/10 ,  H01L33/14 ,  H01L33/145 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

Abstract: Exemplary embodiments of the present invention provide a light emitting diode including a first light emitting cell and a second light emitting cell disposed on a substrate and spaced apart from each other, a first transparent electrode layer disposed on the first light emitting cell and electrically connected to the first light emitting cell, a current blocking layer disposed between a portion of the first light emitting cell and the first transparent electrode layer, an interconnection electrically connecting the first light emitting cell and the second light emitting cell, and an insulation layer disposed between the interconnection and a side surface of the first light emitting cell. The current blocking layer and the insulation layer are connected to each other.

Abstract translation: 本发明的示例性实施例提供一种发光二极管，其包括第一发光单元和布置在基板上并彼此间隔开的第二发光单元，第一透明电极层，设置在第一发光单元上并电连接到 第一发光单元，设置在第一发光单元的一部分和第一透明电极层之间的电流阻挡层，电连接第一发光单元和第二发光单元的互连以及设置在第一发光单元之间的绝缘层 互连和第一发光单元的侧表面。 电流阻挡层和绝缘层彼此连接。

公开(公告)号：US09012952B2

公开(公告)日：2015-04-21

申请号：US14229672

申请日：2014-03-28

Applicant: Seoul Viosys Co., Ltd.

Inventor： Won Cheol Seo ,  Dae Sung Cho ,  Kyung Hee Ye ,  Kyoung Wan Kim ,  Yeo Jin Yoon

IPC: H01L33/00 ,  H01L33/42 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62 ,  H01L33/08 ,  H01L33/20

CPC classification number: H01L33/387 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

Abstract: Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

Abstract translation: 本发明的示例性实施例涉及包括基板，布置在基板上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层之间的有源层 和第二导电型半导体层，电连接到第一导电类型半导体层的第一电极焊盘，布置在第二导电类型半导体层上的第二电极焊盘，设置在第二导电类型半导体层和第二电极之间的绝缘层 垫，以及电连接到第二电极焊盘的至少一个上延伸部，所述至少一个上延伸部电连接到第二导电型半导体层。

公开(公告)号：US20140367722A1

公开(公告)日：2014-12-18

申请号：US14368268

申请日：2012-12-21

Applicant: Seoul Viosys Co., Ltd.

Inventor： Tae Hyuk Im ,  Chang Yeon Kim ,  Yeo Jin Yoon ,  Joon Hee Lee ,  Ki Bum Nam ,  Da Hye Kim ,  Chang Ik Im ,  Young Wug Kim

IPC: H01L33/44 ,  H01L33/38 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/44 ,  H01L33/0008 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/387 ,  H01L33/405 ,  H01L33/60 ,  H01L2933/0083 ,  H01L2933/0091

Abstract: Disclosed are a light-emitting diode and a method for manufacturing the same. A light-emitting diode according to one aspect of the present invention includes: a first conductive clad layer; a light-scattering pattern configured, in the first conductive clad layer, having a refractive index different from that of the first conductive clad layer; an active layer located under the first conductive clad layer; a second conductive clad layer located under the active layer; a first electrode configured to be electrically connected to the first conductive clad layer; and a second electrode configured to be electrically connected to the second conductive clad layer. The light-scattering pattern can improve light extraction efficiency.

Abstract translation: 公开了一种发光二极管及其制造方法。 根据本发明的一个方面的发光二极管包括：第一导电覆层; 在第一导电覆层中配置的折射率不同于第一导电覆层的折射率的光散射图案; 位于第一导电覆层下方的有源层; 位于有源层下方的第二导电覆层; 第一电极，被配置为电连接到所述第一导电包覆层; 以及第二电极，被配置为电连接到第二导电包覆层。 光散射图可以提高光提取效率。

公开(公告)号：US08895957B2

公开(公告)日：2014-11-25

申请号：US14015411

申请日：2013-08-30

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Lam Lee ,  Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Dae Won Kim

IPC: H01L33/24 ,  H01L33/08 ,  H01L27/15 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L27/15 ,  H01L27/153 ,  H01L27/3281 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/28 ,  H01L33/32 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L51/5253 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2933/0066 ,  H01L2924/00

Abstract: The present invention relates to a light emitting device. The light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, a light emitting device comprises a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane.

Abstract translation: 本发明涉及一种发光装置。 发光器件包括衬底，形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层，其中包括N型或P型半导体层的侧表面 与水平面的斜率为20〜80°。 此外，发光器件包括形成有多个发光单元的衬底，每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层，其中，一个N型半导体层 发光单元和另一个相邻的发光单元的P型半导体层彼此连接，并且至少包括发光单元的P型半导体层的侧表面具有从80°到20°的斜率 水平面。