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    Semiconductor light emitting device
    41.
    发明授权
    Semiconductor light emitting device 失效
    半导体发光器件

    公开(公告)号：US08436395B2

    公开(公告)日：2013-05-07

    申请号：US13405961

    申请日：2012-02-27

    申请人： Takahiro Sato ,  Shigeya Kimura ,  Taisuke Sato ,  Toshihide Ito ,  Koichi Tachibana ,  Shinya Nunoue

    发明人： Takahiro Sato ,  Shigeya Kimura ,  Taisuke Sato ,  Toshihide Ito ,  Koichi Tachibana ,  Shinya Nunoue

    IPC分类号： H01L33/36

    CPC分类号： H01L33/24 ,  H01L33/382 ,  H01L33/42

    摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure unit, a transparent, p-side and n-side electrodes. The unit includes n-type semiconductor layer, a light emitting portion provided on a part of the n-type semiconductor layer and p-type semiconductor layer provided on the light emitting portion. The transparent electrode is provided on the p-type semiconductor layer. The p-side electrode is provided on the transparent electrode. The n-side electrode is provided on the n-type semiconductor layer. The transparent electrode has a hole provided between the n-side and p-side electrodes. A width of the hole along an axis perpendicular to an axis from the p-side electrode toward the n-side electrode is longer than widths of the n-side and p-side electrodes. A distance between the hole and the n-side electrode is not longer than a distance between the hole and the p-side electrode.

    摘要翻译： 根据一个实施例，半导体发光器件包括堆叠结构单元，透明的p侧和n侧电极。 该单元包括n型半导体层，设置在n型半导体层的一部分上的发光部分和设置在发光部分上的p型半导体层。 透明电极设置在p型半导体层上。 p侧电极设置在透明电极上。 n侧电极设置在n型半导体层上。 透明电极具有设置在n侧和p侧电极之间的孔。 沿着与p侧电极朝向n侧电极的轴垂直的轴的孔的宽度比n侧电极和p侧电极的宽度长。 孔和n侧电极之间的距离不大于孔和p侧电极之间的距离。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    42.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
    半导体发光器件

    公开(公告)号：US20130001584A1

    公开(公告)日：2013-01-03

    申请号：US13405961

    申请日：2012-02-27

    申请人： Takahiro SATO ,  Shigeya Kimura ,  Taisuke Sato ,  Toshihide Ito ,  Koichi Tachibana ,  Shinya Nunoue

    发明人： Takahiro SATO ,  Shigeya Kimura ,  Taisuke Sato ,  Toshihide Ito ,  Koichi Tachibana ,  Shinya Nunoue

    IPC分类号： H01L33/32

    CPC分类号： H01L33/24 ,  H01L33/382 ,  H01L33/42

    摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure unit, a transparent, p-side and n-side electrodes. The unit includes n-type semiconductor layer, a light emitting portion provided on a part of the n-type semiconductor layer and p-type semiconductor layer provided on the light emitting portion. The transparent electrode is provided on the p-type semiconductor layer. The p-side electrode is provided on the transparent electrode. The n-side electrode is provided on the n-type semiconductor layer. The transparent electrode has a hole provided between the n-side and p-side electrodes. A width of the hole along an axis perpendicular to an axis from the p-side electrode toward the n-side electrode is longer than widths of the n-side and p-side electrodes. A distance between the hole and the n-side electrode is not longer than a distance between the hole and the p-side electrode.

    摘要翻译： 根据一个实施例，半导体发光器件包括堆叠结构单元，透明的p侧和n侧电极。 该单元包括n型半导体层，设置在n型半导体层的一部分上的发光部分和设置在发光部分上的p型半导体层。 透明电极设置在p型半导体层上。 p侧电极设置在透明电极上。 n侧电极设置在n型半导体层上。 透明电极具有设置在n侧和p侧电极之间的孔。 沿着与p侧电极朝向n侧电极的轴垂直的轴的孔的宽度比n侧电极和p侧电极的宽度长。 孔和n侧电极之间的距离不大于孔和p侧电极之间的距离。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS
    43.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS 失效
    半导体发光装置和发光装置

    公开(公告)号：US20120217524A1

    公开(公告)日：2012-08-30

    申请号：US13206649

    申请日：2011-08-10

    申请人： Taisuke Sato ,  Shigeya Kimura ,  Kotaro Zaima ,  Koichi Tachibana ,  Shinya Nunoue

    发明人： Taisuke Sato ,  Shigeya Kimura ,  Kotaro Zaima ,  Koichi Tachibana ,  Shinya Nunoue

    IPC分类号： H01L33/50 ,  H01L33/40

    CPC分类号： H01L33/02 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L33/44 ,  H01L33/50 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012

    摘要： According to one embodiment, a semiconductor light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, a light emitting layer, a p-side electrode and an n-side electrode. The p-type semiconductor layer includes a nitride semiconductor and has a first major surface. The n-type semiconductor layer includes a nitride semiconductor and has a second major surface. The light emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer. The p-side electrode contacts a part of the p-type semiconductor layer on the first major surface. The n-side electrode contacts a part of the n-type semiconductor layer on the second major surface. The n-side electrode is provided outside and around the p-side electrode in a plan view along a direction from the p-type semiconductor layer to the n-type semiconductor layer.

    摘要翻译： 根据一个实施例，半导体发光器件包括p型半导体层，n型半导体层，发光层，p侧电极和n侧电极。 p型半导体层包括氮化物半导体，并且具有第一主表面。 n型半导体层包括氮化物半导体，并具有第二主表面。 发光层设置在n型半导体层和p型半导体层之间。 p侧电极与第一主表面上的p型半导体层的一部分接触。 n侧电极与第二主表面上的n型半导体层的一部分接触。 n侧电极沿着从p型半导体层到n型半导体层的方向的平面图设置在p侧电极的外侧和周围。

    Semiconductor light emitting device
    44.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US08704268B2

    公开(公告)日：2014-04-22

    申请号：US13404531

    申请日：2012-02-24

    申请人： Shigeya Kimura ,  Koichi Tachibana ,  Shinya Nunoue

    发明人： Shigeya Kimura ,  Koichi Tachibana ,  Shinya Nunoue

    IPC分类号： H01L33/30

    CPC分类号： H01L33/06 ,  H01L33/32

    摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer. The emitting layer is provided between the n-type layer and the p-type layer, and includes a plurality of barrier layers and a plurality of well layers, being alternately stacked. The p-side barrier layer being closest to the p-type layer among the plurality of barrier layer includes a first layer and a second layer, containing group III elements. An In composition ratio in the group III elements of the second layer is higher than an In composition ratio in the group III elements of the first layer. An average In composition ratio of the p-side layer is higher than an average In composition ratio of an n-side barrier layer that is closest to the n-type layer among the plurality of barrier layers.

    摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光层。 发光层设置在n型层和p型层之间，并且包括交替层叠的多个势垒层和多个阱层。 在多个阻挡层中最靠近p型层的p侧阻挡层包括含有III族元素的第一层和第二层。 第二层的III族元素中的In组成比高于第一层的III族元素中的In组成比。 p侧层的平均In组成比高于多个势垒层中最靠近n型层的n侧阻挡层的平均In组成比。

    Semiconductor light emitting device and light emitting apparatus
    47.
    发明授权
    Semiconductor light emitting device and light emitting apparatus 失效
    半导体发光器件和发光装置

    公开(公告)号：US08766311B2

    公开(公告)日：2014-07-01

    申请号：US13206649

    申请日：2011-08-10

    申请人： Taisuke Sato ,  Shigeya Kimura ,  Kotaro Zaima ,  Koichi Tachibana ,  Shinya Nunoue

    发明人： Taisuke Sato ,  Shigeya Kimura ,  Kotaro Zaima ,  Koichi Tachibana ,  Shinya Nunoue

    IPC分类号： H01L33/00 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L33/40

    CPC分类号： H01L33/02 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L33/44 ,  H01L33/50 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012

    摘要： According to one embodiment, a semiconductor light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, a light emitting layer, a p-side electrode and an n-side electrode. The p-type semiconductor layer includes a nitride semiconductor and has a first major surface. The n-type semiconductor layer includes a nitride semiconductor and has a second major surface. The light emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer. The p-side electrode contacts a part of the p-type semiconductor layer on the first major surface. The n-side electrode contacts a part of the n-type semiconductor layer on the second major surface. The n-side electrode is provided outside and around the p-side electrode in a plan view along a direction from the p-type semiconductor layer to the n-type semiconductor layer.

    摘要翻译： 根据一个实施例，半导体发光器件包括p型半导体层，n型半导体层，发光层，p侧电极和n侧电极。 p型半导体层包括氮化物半导体，并且具有第一主表面。 n型半导体层包括氮化物半导体，并具有第二主表面。 发光层设置在n型半导体层和p型半导体层之间。 p侧电极与第一主表面上的p型半导体层的一部分接触。 n侧电极与第二主表面上的n型半导体层的一部分接触。 n侧电极沿着从p型半导体层到n型半导体层的方向的平面图设置在p侧电极的外侧和周围。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    48.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20120061713A1

    公开(公告)日：2012-03-15

    申请号：US13222912

    申请日：2011-08-31

    申请人： Koichi Tachibana ,  Shigeya Kimura ,  Toshiki Hikosaka ,  Taisuke Sato ,  Toshiyuki Oka ,  Shinya Nunoue

    发明人： Koichi Tachibana ,  Shigeya Kimura ,  Toshiki Hikosaka ,  Taisuke Sato ,  Toshiyuki Oka ,  Shinya Nunoue

    IPC分类号： H01L33/42

    CPC分类号： H01L33/42

    摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structure body, first and second electrodes, and a pad layer. The body includes first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of second conductivity type. The first semiconductor layer has first and second portions. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode is provided on the first portion. The second electrode is provided on the second semiconductor layer and is transmittable to light emitted from the light emitting layer. The pad layer is connected to the second electrode. A transmittance of the pad layer is lower than that of the second electrode. A sheet resistance of the second electrode increases continuously along a direction from the pad layer toward the first electrode.

    摘要翻译： 根据一个实施例，半导体发光器件包括：堆叠结构体，第一和第二电极以及衬垫层。 主体包括第一导电类型的第一半导体层，发光层和第二导电类型的第二半导体层。 第一半导体层具有第一和第二部分。 发光层设置在第二部分上。 第二半导体层设置在发光层上。 第一电极设置在第一部分上。 第二电极设置在第二半导体层上，并且可透射到从发光层发射的光。 焊盘层连接到第二电极。 焊盘层的透射率低于第二电极的透射率。 第二电极的薄层电阻沿着从衬垫层向第一电极的方向连续地增加。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    49.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号：US20120032209A1

    公开(公告)日：2012-02-09

    申请号：US13032934

    申请日：2011-02-23

    申请人： Tomonari SHIODA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Koichi Tachibana ,  Shinya Nunoue

    发明人： Tomonari SHIODA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Koichi Tachibana ,  Shinya Nunoue

    IPC分类号： H01L33/32

    CPC分类号： H01L33/06 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/04 ,  H01L33/32

    摘要： According to one embodiment, a semiconductor light emitting device includes: semiconductor layers; a multilayered structural body; and a light emitting portion. The multilayered structural body is provided between the semiconductor layers, and includes a first layer and a second layer including In. The light emitting portion is in contact with the multilayered structural body between the multilayered structural body and p-type semiconductor layer, and includes barrier layers and a well layer including In with an In composition ratio among group III elements higher than an In composition ratio among group III elements in the second layer. An average lattice constant of the multilayered structural body is larger than that of the n-type semiconductor layer. Difference between the average lattice constant of the multilayered structural body and that of the light emitting portion is less than difference between that of the multilayered structural body and that of the n-type semiconductor layer.

    摘要翻译： 根据一个实施例，半导体发光器件包括：半导体层; 多层结构体; 和发光部分。 多层结构体设置在半导体层之间，并且包括第一层和包括In的第二层。 发光部分与多层结构体和p型半导体层之间的多层结构体接触，并且包括阻挡层和包括In的阱层，III族元素中的In组成比高于In组成比中的In组成比 第三组元素在第二层。 多层结构体的平均晶格常数大于n型半导体层的平均晶格常数。 多层结构体的平均晶格常数与发光部的平均晶格常数之差小于多层结构体与n型半导体层的平均晶格常数之差。