公开(公告)号：US09245776B2

公开(公告)日：2016-01-26

申请号：US12979875

申请日：2010-12-28

申请人： Shinji Himori ,  Daisuke Hayashi ,  Akitaka Shimizu

发明人： Shinji Himori ,  Daisuke Hayashi ,  Akitaka Shimizu

IPC分类号： H01J37/32 ,  H01L21/67

CPC分类号： H01L21/67069 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/3255 ,  H01J37/32577 ,  H01J37/32605

摘要： A plasma processing apparatus includes a processing chamber in which a target substrate is processed; an application electrode and a facing electrode provided to face each other in the processing chamber, a plasma generation space being formed between the application electrode and the facing electrode; and an RF power supply connected to the application electrode, an RF power being supplied from the RF power supply to the application electrode. At least one of the application electrode and the facing electrode includes a base formed of a metal, and a dielectric body inserted into the base, one or more metal plate electrodes being buried in the dielectric body.

摘要翻译： 等离子体处理装置包括：处理室，其中处理目标基板; 在处理室中设置成面对的施加电极和对置电极，在施加电极和对置电极之间形成等离子体产生空间; 以及连接到施加电极的RF电源，RF电力从RF电源提供给施加电极。 施加电极和对置电极中的至少一个包括由金属形成的基底和插入到基底中的电介质体，一个或多个金属板电极被埋在电介质体内。

公开(公告)号：US09038566B2

公开(公告)日：2015-05-26

申请号：US13278228

申请日：2011-10-21

申请人： Shinji Himori ,  Tatsuo Matsudo

发明人： Shinji Himori ,  Tatsuo Matsudo

IPC分类号： H01J7/24 ,  H05B31/26 ,  C23C16/00 ,  H01L21/306 ,  C23F1/00 ,  H01J37/32

CPC分类号： H01J37/32082 ,  H01J37/32091 ,  H01J37/32532 ,  H01J37/32568

摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. The second electrode includes a plurality of conductive segments separated from each other and facing the first electrode. An RF power supply is configured to apply an RF power to the first electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma by the RF electric field. A DC power supply is configured to apply a DC voltage to at least one of the segments of the second electrode.

摘要翻译： 电容耦合等离子体处理装置包括被配置为具有真空气氛的处理室和被配置为将处理气体供应到室中的处理气体供给部。 在腔室中，第一电极和第二电极相对设置。 第二电极包括彼此分离并面向第一电极的多个导电段。 RF电源被配置为向第一电极施加RF功率以在第一和第二电极之间的等离子体产生区域内形成RF电场，以便通过RF电场将处理气体转化成等离子体。 DC电源被配置为向第二电极的至少一个段施加DC电压。

公开(公告)号：US08888951B2

公开(公告)日：2014-11-18

申请号：US12718544

申请日：2010-03-05

申请人： Shinji Himori

发明人： Shinji Himori

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

CPC分类号： H01J37/32577 ,  H01J37/3255 ,  H01J2237/03

摘要： A plasma processing apparatus includes a processing chamber that plasma processes a target object therein, first and second electrodes that are provided in the processing chamber to face each other and have a processing space therebetween, and a high frequency power source that is connected to at least one of the first and second electrodes to supply high frequency power to the processing chamber. At least one of the first and second electrodes includes a base formed of a metal, a dielectric material provided at a central portion of a plasma side of the base, and a first resistor provided between the dielectric material and plasma, and formed of a metal with a predetermined pattern.

摘要翻译： 一种等离子体处理装置包括：处理室，其中处理目标物体;设置在处理室中的第一和第二电极彼此面对并具有其间的处理空间;以及高频电源，至少连接至 第一和第二电极之一，以向处理室提供高频功率。 第一电极和第二电极中的至少一个包括由金属形成的基底，设置在基底的等离子体侧的中心部分处的电介质材料和设置在电介质材料和等离子体之间的第一电阻器，并且由金属 具有预定的图案。

公开(公告)号：US08821684B2

公开(公告)日：2014-09-02

申请号：US12363070

申请日：2009-01-30

申请人： Akio Ui ,  Naoki Tamaoki ,  Takashi Ichikawa ,  Hisataka Hayashi ,  Takeshi Kaminatsui ,  Shinji Himori ,  Norikazu Yamada ,  Takeshi Ohse ,  Jun Abe

发明人： Akio Ui ,  Naoki Tamaoki ,  Takashi Ichikawa ,  Hisataka Hayashi ,  Takeshi Kaminatsui ,  Shinji Himori ,  Norikazu Yamada ,  Takeshi Ohse ,  Jun Abe

IPC分类号： C23F1/00 ,  C23C16/50 ,  H01L21/306 ,  H01J37/32

CPC分类号： H01J37/32027 ,  H01J37/32045 ,  H01J37/32091

摘要： A substrate plasma processing apparatus includes a substrate holding electrode and a counter electrode which are arranged in a chamber, a high frequency generating device which applies a high frequency of 50 MHZ or higher to the substrate holding electrode, a DC negative pulse generating device which applies a DC negative pulse voltage in a manner of superimposing on the high frequency, and a controller controlling to cause intermittent application of the high frequency and cause intermittent application of the DC negative pulse voltage according to the timing of on or off of the high frequency.

摘要翻译： 衬底等离子体处理装置包括布置在腔室中的衬底保持电极和对电极，向衬底保持电极施加50MHz以上的高频的高频发生装置，应用了DC负脉冲发生装置 以高频重叠的方式设置直流负脉冲电压，以及控制器，根据高频开启或关闭的定时控制高频频率的间歇施加，直流负脉冲电压的间歇施加。

公开(公告)号：US20140213055A1

公开(公告)日：2014-07-31

申请号：US14238860

申请日：2012-08-13

申请人： Shinji Himori ,  Yoshiyuki Kobayashi ,  Takehiro Kato ,  Etsuji Ito

发明人： Shinji Himori ,  Yoshiyuki Kobayashi ,  Takehiro Kato ,  Etsuji Ito

IPC分类号： H01L21/687 ,  H01L21/67 ,  H01L21/306

CPC分类号： H01L21/68742 ,  H01L21/30604 ,  H01L21/67063

摘要： A semiconductor manufacturing device includes a stage, a plurality of pins, and a driving unit. The stage includes a mounting surface. The mounting surface has a first region for mounting thereon a substrate, and a second region for mounting thereon a focus ring. The second region is provided to surround the first region. A plurality of holes is formed in the stage. The holes extend in a direction that intersects the mounting surface while passing through the boundary between the first region and the second region. The pins are provided in the respective holes. Each of the pins has a first and a second upper end surface. The second. upper end surface is provided above the first upper end surface, and is offset towards the first region with respect to the first upper end surface. The driving unit moves the pins up and down in the aforementioned direction.

摘要翻译： 半导体制造装置包括台，多个销和驱动单元。 舞台包括安装表面。 安装表面具有用于在其上安装基板的第一区域和用于在其上安装聚焦环的第二区域。 第二区域设置成围绕第一区域。 在台阶上形成多个孔。 这些孔在穿过第一区域和第二区域之间的边界的同时沿着与安装表面相交的方向延伸。 销设置在相应的孔中。 每个销具有第一和第二上端表面。 第二。 上端表面设置在第一上端表面上方，并且相对于第一上端表面偏移到第一区域。 驱动单元在上述方向上上下移动销。

公开(公告)号：US08512511B2

公开(公告)日：2013-08-20

申请号：US12560924

申请日：2009-09-16

申请人： Shinji Himori ,  Yasuharu Sasaki

发明人： Shinji Himori ,  Yasuharu Sasaki

IPC分类号： H01L21/3065 ,  C23C16/50 ,  C23C16/509

CPC分类号： H01L21/6833 ,  H01J37/32091

摘要： A mounting table for use in a plasma processing apparatus, on which a substrate is mounted, includes: a conductive member connected to a high frequency power supply and a high frequency power supply; a dielectric layer embedded in a central portion on an upper surface of the conductive member; and an electrostatic chuck mounted on the dielectric layer. Further, the electrostatic chuck is connected to a high voltage DC power supply and includes an electrode film satisfying following conditions: δ/z≧85 (where δ=(ρv/(μπf))1/2) and, a surface resistivity of the substrate>a surface resistivity of a central portion of the electrode film.

摘要翻译： 一种用于安装有基板的等离子体处理装置的安装台，包括：连接到高频电源和高频电源的导电构件; 介电层，其嵌入在所述导电部件的上表面的中央部; 以及安装在电介质层上的静电卡盘。 此外，静电卡盘连接到高压直流电源，并且包括满足以下条件的电极膜：δ/ z> = 85（其中δ=（rhov /（mupif））1/2），并且表面电阻率 衬底>电极膜的中心部分的表面电阻率。

公开(公告)号：US08070911B2

公开(公告)日：2011-12-06

申请号：US11392811

申请日：2006-03-30

申请人： Shinji Himori ,  Tatsuo Matsudo

发明人： Shinji Himori ,  Tatsuo Matsudo

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01J37/32082 ,  H01J37/32091 ,  H01J37/32532 ,  H01J37/32568

摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. The second electrode includes a plurality of conductive segments separated from each other and facing the first electrode. An RF power supply is configured to apply an RF power to the first electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma by the RF electric field. A DC power supply is configured to apply a DC voltage to at least one of the segments of the second electrode.

摘要翻译： 电容耦合等离子体处理装置包括被配置为具有真空气氛的处理室和被配置为将处理气体供应到室中的处理气体供给部。 在腔室中，第一电极和第二电极相对设置。 第二电极包括彼此分离并面向第一电极的多个导电段。 RF电源被配置为向第一电极施加RF功率以在第一和第二电极之间的等离子体产生区域内形成RF电场，以便通过RF电场将处理气体转化成等离子体。 DC电源被配置为向第二电极的至少一个段施加DC电压。

公开(公告)号：US07850174B2

公开(公告)日：2010-12-14

申请号：US10751898

申请日：2004-01-07

申请人： Shosuke Endoh ,  Shinji Himori

发明人： Shosuke Endoh ,  Shinji Himori

IPC分类号： C23F1/00

CPC分类号： H01L21/67069 ,  H01J37/32642 ,  Y10T279/23

摘要： A plasma processing apparatus and a focus ring enables to perform uniform plasma processing over the entire surface of a substrate to be processed to thereby improve in-surface uniformity of plasma processing compared with conventional cases. The focus ring is disposed on a susceptor 2, which serves to mount thereon a semiconductor wafer W and further functions as a lower electrode, to surround a periphery of the semiconductor wafer W. The focus ring 6 includes a ring member of a thin plate shape disposed to surround the periphery of the wafer W while maintaining a gap therebetween and a lower ring body installed below the semiconductor wafer and the ring member of the thin plate shape.

摘要翻译： 等离子体处理装置和聚焦环能够在待处理的基板的整个表面上进行均匀的等离子体处理，从而提高等离子体处理的表面均匀性，与常规情况相比。 聚焦环设置在基座2上，该基座2用于在其上安装半导体晶片W，并且还用作下部电极，以围绕半导体晶片W的周围。聚焦环6包括薄板形状的环形构件 设置成围绕晶片W的周边保持间隙，并且安装在半导体晶片下方的下环体和薄板形状的环构件。

公开(公告)号：US20090242135A1

公开(公告)日：2009-10-01

申请号：US12410943

申请日：2009-03-25

申请人： Chishio KOSHIMIZU ,  Shinji Himori

发明人： Chishio KOSHIMIZU ,  Shinji Himori

IPC分类号： H01L21/3065

CPC分类号： H01J37/32541 ,  H01J37/32091 ,  H01J37/32568 ,  H01J37/32577

摘要： A plasma processing apparatus includes: a vacuum-evacuable processing chamber; a lower central electrode; a lower peripheral electrode surrounding the lower central electrode in an annular shape; an upper electrode provided to face the lower central electrode and the lower peripheral electrode; a processing gas supply unit for supplying a processing gas into the processing chamber; an RF power supply for outputting an RF power for generating a plasma; and a power feed conductor connected to a rear surface of the lower peripheral electrode to supply the RF power to the lower peripheral electrode. The apparatus further includes a variable capacitance coupling unit for electrically connecting the lower central electrode with at least one of the power feed conductor and the lower peripheral electrode by capacitance coupling with a variable impedance in order to supply a part of the RF power from the RF power supply to the lower central electrode.

摘要翻译： 一种等离子体处理装置，包括：真空排空处理室; 下部中心电极; 围绕下部中心电极的下部周边电极为环状; 设置成面向下中央电极和下周边电极的上电极; 处理气体供应单元，用于将处理气体供应到处理室中; RF电源，用于输出用于产生等离子体的RF功率; 以及连接到下周边电极的后表面的供电导体，以向下周边电极提供RF功率。 该装置还包括可变电容耦合单元，用于通过与可变阻抗的电容耦合来将下部中心电极与馈电导体和下部外围电极中的至少一个电连接，以便从RF提供RF功率的一部分 向下中央电极供电。

公开(公告)号：US20090236043A1

公开(公告)日：2009-09-24

申请号：US12407922

申请日：2009-03-20

申请人： Tatsuo MATSUDO ,  Shinji Himori

发明人： Tatsuo MATSUDO ,  Shinji Himori

IPC分类号： C23F1/08 ,  C23C16/54

CPC分类号： H01L21/3065 ,  H01J37/32091 ,  H01J37/32577 ,  H01J37/32642

摘要： A plasma processing apparatus includes a processing gas supplying unit for supplying a desired processing gas to a processing space between an upper electrode and a lower electrode which are disposed facing each other in an evacuable processing chamber. The plasma processing apparatus further includes a radio frequency (RF) power supply unit for applying an RF power to one of the lower and the upper electrode to generate plasma of the processing gas by RF discharge and an electrically conductive RF ground member which covers a periphery portion of the electrode to which the RF power is applied to receive RF power emitted outwardly in radial directions from the periphery portion of the electrode to which the RF power is applied and send the received RF power to a ground line.

摘要翻译： 等离子体处理装置包括处理气体供给单元，用于将所需的处理气体供给到在可排气处理室中彼此面对地设置的上部电极和下部电极之间的处理空间。 等离子体处理装置还包括射频（RF）电源单元，用于向下电极和上电极之一施加RF功率，以通过RF放电产生处理气体的等离子体，以及覆盖周边的导电RF接地元件 施加RF功率的电极的部分，以接收从RF电源所施加的电极的周边部分沿径向向外发射的RF功率，并将接收到的RF功率发送到接地线。