公开(公告)号：US20110163402A1

公开(公告)日：2011-07-07

申请号：US13061299

申请日：2009-08-13

申请人： Shunsuke Fukami ,  Nobuyuki Ishiwata ,  Tetsuhiro Suzuki ,  Kiyokazu Nagahara ,  Norikazu Oshima

发明人： Shunsuke Fukami ,  Nobuyuki Ishiwata ,  Tetsuhiro Suzuki ,  Kiyokazu Nagahara ,  Norikazu Oshima

IPC分类号： H01L29/82

CPC分类号： G11C19/0808 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0841 ,  H01L27/228 ,  H01L43/08

摘要： A magnetic memory according to the present invention has: a first underlayer; a second underlayer so formed on the first underlayer as to be in contact with the first underlayer; and a data storage layer so formed on the second underlayer as to be in contact with the second underlayer. The data storage layer is made of a ferromagnetic material having perpendicular magnetic anisotropy. A magnetization state of the data storage layer is changed by current driven domain wall motion.

摘要翻译： 根据本发明的磁存储器具有：第一底层; 第二底层如此形成在第一底层上以与第一底层接触; 以及形成在第二底层上以与第二底层接触的数据存储层。 数据存储层由具有垂直磁各向异性的铁磁材料制成。 数据存储层的磁化状态由电流驱动畴壁运动改变。

公开(公告)号：US20110116306A1

公开(公告)日：2011-05-19

申请号：US13054577

申请日：2009-07-02

申请人： Tetsuhiro Suzuki ,  Shunsuke Fukami ,  Kiyokazu Nagahara ,  Norikazu Oshima ,  Nobuyuki Ishiwata

发明人： Tetsuhiro Suzuki ,  Shunsuke Fukami ,  Kiyokazu Nagahara ,  Norikazu Oshima ,  Nobuyuki Ishiwata

IPC分类号： G11C11/22 ,  H01L29/82

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1675 ,  H01L29/66984 ,  H01L29/82 ,  H01L43/10

摘要： A domain wall motion type MRAM has: a magnetic recording layer 10 being a ferromagnetic layer having perpendicular magnetic anisotropy; a pair of current supply terminals 14a and 14b connected to the magnetic recording layer 10 for supplying a current to the magnetic recording layer 10; and an anti-ferromagnetic layer 45 being in contact with a first region R1 of the magnetic recording layer 10. The first region R1 includes a part of a current supply region RA of the magnetic recording layer 10 that is between the pair of current supply terminals 14a and 14b.

摘要翻译： 畴壁运动型MRAM具有：具有垂直磁各向异性的铁磁层的磁记录层10; 连接到用于向磁记录层10提供电流的磁记录层10的一对电流供给端子14a和14b; 以及与磁记录层10的第一区域R1接触的反铁磁层45.第一区域R1包括在一对电流供给端子之间的磁记录层10的电流供应区域RA的一部分 14a和14b。

公开(公告)号：US20110292718A1

公开(公告)日：2011-12-01

申请号：US13144480

申请日：2010-01-21

申请人： Tetsuhiro Suzuki ,  Shunsuke Fukami ,  Kiyokazu Nagahara ,  Nobuyuki Ishiwata ,  Tadahiko Sugibayashi ,  Noburu Sakimura ,  Ryusuke Nebashi

发明人： Tetsuhiro Suzuki ,  Shunsuke Fukami ,  Kiyokazu Nagahara ,  Nobuyuki Ishiwata ,  Tadahiko Sugibayashi ,  Noburu Sakimura ,  Ryusuke Nebashi

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C11/5607 ,  H01L43/08 ,  H03K19/1776 ,  H03K19/1778 ,  H03K19/18 ,  H03K19/20

摘要： A non-volatile logic circuit includes an input section, a control section and an output section. The input section has perpendicular magnetic anisotropy and has a ferromagnetic layer whose magnetization state is changeable. The control section includes a ferromagnetic layer. The output section is provided in a neighborhood of the input section and the control section and includes a magnetic tunnel junction element whose magnetization state is changeable. The magnetization state of the input section is changed based on the magnetization state. A magnetization state of the magnetic tunnel junction element of the output section which state is changed based on the magnetization state of the ferromagnetic material of the control section and the magnetization state of the ferromagnetic material of the input section.

摘要翻译： 非易失性逻辑电路包括输入部分，控制部分和输出部分。 输入部具有垂直的磁各向异性，并具有磁化状态可变的铁磁层。 控制部分包括铁磁层。 输出部分设置在输入部分和控制部分的附近，并且包括磁化状态可变的磁性隧道结元件。 基于磁化状态改变输入部的磁化状态。 输出部分的磁性隧道结元件的磁化状态基于控制部分的铁磁材料的磁化状态和输入部分的铁磁材料的磁化状态而改变。

公开(公告)号：US08503222B2

公开(公告)日：2013-08-06

申请号：US13144480

申请日：2010-01-21

申请人： Tetsuhiro Suzuki ,  Shunsuke Fukami ,  Kiyokazu Nagahara ,  Nobuyuki Ishiwata ,  Tadahiko Sugibayashi ,  Noboru Sakimura ,  Ryusuke Nebashi

发明人： Tetsuhiro Suzuki ,  Shunsuke Fukami ,  Kiyokazu Nagahara ,  Nobuyuki Ishiwata ,  Tadahiko Sugibayashi ,  Noboru Sakimura ,  Ryusuke Nebashi

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C11/5607 ,  H01L43/08 ,  H03K19/1776 ,  H03K19/1778 ,  H03K19/18 ,  H03K19/20

摘要： A non-volatile logic circuit includes an input section, a control section and an output section. The input section has perpendicular magnetic anisotropy and has a ferromagnetic layer whose magnetization state is changeable. The control section includes a ferromagnetic layer. The output section is provided in a neighborhood of the input section and the control section and includes a magnetic tunnel junction element whose magnetization state is changeable. The magnetization state of the input section is changed based on the magnetization state. A magnetization state of the magnetic tunnel junction element of the output section which state is changed based on the magnetization state of the ferromagnetic material of the control section and the magnetization state of the ferromagnetic material of the input section.

摘要翻译： 非易失性逻辑电路包括输入部分，控制部分和输出部分。 输入部具有垂直的磁各向异性，并具有磁化状态可变的铁磁层。 控制部分包括铁磁层。 输出部分设置在输入部分和控制部分的附近，并且包括磁化状态可变的磁性隧道结元件。 基于磁化状态改变输入部的磁化状态。 输出部分的磁性隧道结元件的磁化状态基于控制部分的铁磁材料的磁化状态和输入部分的铁磁材料的磁化状态而改变。

公开(公告)号：US09379312B2

公开(公告)日：2016-06-28

申请号：US13518974

申请日：2010-12-14

申请人： Tadahiko Sugibayashi ,  Eiji Kariyada ,  Kaoru Mori ,  Norikazu Ohshima ,  Shunsuke Fukami ,  Tetsuhiro Suzuki ,  Hironobu Tanigawa ,  Sadahiko Miura ,  Nobuyuki Ishiwata

发明人： Tadahiko Sugibayashi ,  Eiji Kariyada ,  Kaoru Mori ,  Norikazu Ohshima ,  Shunsuke Fukami ,  Tetsuhiro Suzuki ,  Hironobu Tanigawa ,  Sadahiko Miura ,  Nobuyuki Ishiwata

IPC分类号： H01L29/82 ,  H01L43/02 ,  B82Y25/00 ,  G11C11/14 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  G11C11/16 ,  G11C19/08 ,  H01L27/22

CPC分类号： H01L43/02 ,  B82Y25/00 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  G11C19/0841 ,  G11C2213/74 ,  G11C2213/79 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： A magnetoresistive effect element of the present invention includes: a domain wall motion layer, a spacer layer and a reference layer. The domain wall motion layer is made of ferromagnetic material with perpendicular magnetic anisotropy. The spacer layer is formed on the domain wall motion layer and made of non-magnetic material. The reference layer is formed on the spacer layer and made of ferromagnetic material, magnetization of the reference layer being fixed. The domain wall motion layer includes at least one domain wall, and stores data corresponding to a position of the domain wall. An anisotropy magnetic field of the domain wall motion layer is larger than a value in which the domain wall motion layer can hold the perpendicular magnetic anisotropy, and smaller than an essential value of an anisotropy magnetic field of the ferromagnetic material of the domain wall motion layer.

摘要翻译： 本发明的磁阻效应元件包括：畴壁运动层，间隔层和参考层。 畴壁运动层由具有垂直磁各向异性的铁磁材料制成。 间隔层形成在畴壁运动层上，由非磁性材料制成。 参考层形成在间隔层上，由铁磁材料制成，参考层的磁化被固定。 畴壁运动层包括至少一个畴壁，并存储对应于畴壁位置的数据。 畴壁运动层的各向异性磁场大于畴壁运动层能够保持垂直磁各向异性的值，并且小于畴壁运动层的铁磁材料的各向异性磁场的基本值 。

公开(公告)号：US20130175645A1

公开(公告)日：2013-07-11

申请号：US13518974

申请日：2010-12-14

申请人： Tadahiko Sugibayashi ,  Eiji Kariyada ,  Kaoru Mori ,  Norikazu Ohshima ,  Shunsuke Fukami ,  Tetsuhiro Suzuki ,  Hironobu Tanigawa ,  Sadahiko Miura ,  Nobuyuki Ishiwata

发明人： Tadahiko Sugibayashi ,  Eiji Kariyada ,  Kaoru Mori ,  Norikazu Ohshima ,  Shunsuke Fukami ,  Tetsuhiro Suzuki ,  Hironobu Tanigawa ,  Sadahiko Miura ,  Nobuyuki Ishiwata

IPC分类号： H01L43/02

CPC分类号： H01L43/02 ,  B82Y25/00 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  G11C19/0841 ,  G11C2213/74 ,  G11C2213/79 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/3295 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： A magnetoresistive effect element of the present invention includes: a domain wall motion layer, a spacer layer and a reference layer. The domain wall motion layer is made of ferromagnetic material with perpendicular magnetic anisotropy. The spacer layer is formed on the domain wall motion layer and made of non-magnetic material. The reference layer is formed on the spacer layer and made of ferromagnetic material, magnetization of the reference layer being fixed. The domain wall motion layer includes at least one domain wall, and stores data corresponding to a position of the domain wall. An anisotropy magnetic field of the domain wall motion layer is larger than a value in which the domain wall motion layer can hold the perpendicular magnetic anisotropy, and smaller than an essential value of an anisotropy magnetic field of the ferromagnetic material of the domain wall motion layer.

摘要翻译： 本发明的磁阻效应元件包括：畴壁运动层，间隔层和参考层。 畴壁运动层由具有垂直磁各向异性的铁磁材料制成。 间隔层形成在畴壁运动层上，由非磁性材料制成。 参考层形成在间隔层上，由铁磁材料制成，参考层的磁化被固定。 畴壁运动层包括至少一个畴壁，并存储对应于畴壁位置的数据。 畴壁运动层的各向异性磁场大于畴壁运动层能够保持垂直磁各向异性的值，并且小于畴壁运动层的铁磁材料的各向异性磁场的基本值 。

公开(公告)号：US07929342B2

公开(公告)日：2011-04-19

申请号：US11996711

申请日：2006-08-04

申请人： Hideaki Numata ,  Norikazu Ohshima ,  Tetsuhiro Suzuki ,  Tadahiko Sugibayashi ,  Nobuyuki Ishiwata ,  Shunsuke Fukami

发明人： Hideaki Numata ,  Norikazu Ohshima ,  Tetsuhiro Suzuki ,  Tadahiko Sugibayashi ,  Nobuyuki Ishiwata ,  Shunsuke Fukami

IPC分类号： G11C11/14

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  H01L27/228

摘要： The present invention provides a new data writing method for an MRAM which can suppress deterioration of a tunnel barrier layer.A magnetic memory cell 1 has a magnetic recording layer 10 and a pinned layer 30 connected to the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 includes a magnetization switching region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization switching region 13 has reversible magnetization and faces the pinned layer 30. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization direction is fixed to a first direction. The second magnetization fixed region 12 is connected to a second boundary B2 of the magnetization switching region 13 and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching region 13 or away from the magnetization switching region 13.

摘要翻译： 本发明提供了一种能够抑制隧道势垒层劣化的MRAM的新数据写入方法。 磁存储单元1具有通过非磁性层20连接到磁记录层10的磁记录层10和钉扎层30.磁记录层10包括磁化切换区13，第一磁化固定区11和 第二磁化固定区域12.磁化切换区域13具有可逆磁化并面向被钉扎层30.第一磁化固定区域11连接到磁化转换区域13的第一边界B1，并且其磁化方向被固定到第一磁化固定区域 方向。 第二磁化固定区域12与磁化切换区域13的第二边界B2连接，其磁化方向固定在第二方向。 第一方向和第二方向都朝向磁化开关区域13或远离磁化开关区域13。

公开(公告)号：US20100142264A1

公开(公告)日：2010-06-10

申请号：US11996711

申请日：2006-08-04

申请人： Hideaki Numata ,  Norikazu Ohshima ,  Tetsuhiro Suzuki ,  Tadahiko Sugibayashi ,  Nobuyuki Ishiwata ,  Shunsuke Fukami

发明人： Hideaki Numata ,  Norikazu Ohshima ,  Tetsuhiro Suzuki ,  Tadahiko Sugibayashi ,  Nobuyuki Ishiwata ,  Shunsuke Fukami

IPC分类号： G11C11/14 ,  H01L29/82 ,  G11C7/00

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1675 ,  G11C19/0808 ,  H01L27/228

摘要： The present invention provides a new data writing method for an MRAM which can suppress deterioration of a tunnel barrier layer.A magnetic memory cell 1 has a magnetic recording layer 10 and a pinned layer 30 connected to the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 includes a magnetization switching region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization switching region 13 has reversible magnetization and faces the pinned layer 30. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization direction is fixed to a first direction. The second magnetization fixed region 12 is connected to a second boundary B2 of the magnetization switching region 13 and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching region 13 or away from the magnetization switching region 13.

摘要翻译： 本发明提供了一种能够抑制隧道势垒层劣化的MRAM的新数据写入方法。 磁存储单元1具有通过非磁性层20连接到磁记录层10的磁记录层10和钉扎层30.磁记录层10包括磁化切换区13，第一磁化固定区11和 第二磁化固定区域12.磁化切换区域13具有可逆磁化并面向被钉扎层30.第一磁化固定区域11连接到磁化转换区域13的第一边界B1，并且其磁化方向被固定到第一磁化固定区域 方向。 第二磁化固定区域12与磁化切换区域13的第二边界B2连接，其磁化方向固定在第二方向。 第一方向和第二方向都朝向磁化开关区域13或远离磁化开关区域13。

公开(公告)号：US20130113058A1

公开(公告)日：2013-05-09

申请号：US13636280

申请日：2011-03-09

申请人： Shunsuke Fukami ,  Kiyokazu Nagahara ,  Tetsuhiro Suzuki

发明人： Shunsuke Fukami ,  Kiyokazu Nagahara ,  Tetsuhiro Suzuki

IPC分类号： H01L43/02 ,  H01L43/12

CPC分类号： H01L43/02 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： A magnetic memory element includes: a first magnetization free layer configured to be composed of ferromagnetic material with perpendicular magnetic anisotropy; a reference layer configured to be provided near the first magnetization free layer; a non-magnetic layer configured to be provided adjacent to the reference layer; and a step formation layer configured to be provided under the first magnetization free layer. The first magnetization free layer includes: a first magnetization fixed region of which magnetization is fixed, a second magnetization fixed region of which magnetization is fixed, and a magnetization free region configured to be connected with the first magnetization fixed region and the second magnetization fixed region. The first magnetization free layer has at least one of a step, a groove and a protrusion inside.

摘要翻译： 磁存储元件包括：第一磁化自由层，其被配置为由具有垂直磁各向异性的铁磁材料构成; 配置为设置在所述第一磁化自由层附近的参考层; 构造成邻近所述参考层设置的非磁性层; 以及台阶形成层，被配置为设置在所述第一磁化自由层的下方。 第一磁化自由层包括：固定磁化的第一磁化固定区域，固定磁化的第二磁化固定区域和被配置为与第一磁化固定区域和第二磁化固定区域连接的无磁化区域 。 第一磁化自由层具有台阶，凹槽和内部的突起中的至少一个。

公开(公告)号：US08884388B2

公开(公告)日：2014-11-11

申请号：US13636280

申请日：2011-03-09

申请人： Shunsuke Fukami ,  Kiyokazu Nagahara ,  Tetsuhiro Suzuki

发明人： Shunsuke Fukami ,  Kiyokazu Nagahara ,  Tetsuhiro Suzuki

IPC分类号： H01L29/82 ,  H01L43/08 ,  H01L43/12 ,  G11C11/16 ,  H01L43/02 ,  H01L27/22

CPC分类号： H01L43/02 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： A magnetic memory element includes: a first magnetization free layer configured to be composed of ferromagnetic material with perpendicular magnetic anisotropy; a reference layer configured to be provided near the first magnetization free layer; a non-magnetic layer configured to be provided adjacent to the reference layer; and a step formation layer configured to be provided under the first magnetization free layer. The first magnetization free layer includes: a first magnetization fixed region of which magnetization is fixed, a second magnetization fixed region of which magnetization is fixed, and a magnetization free region configured to be connected with the first magnetization fixed region and the second magnetization fixed region. The first magnetization free layer has at least one of a step, a groove and a protrusion inside.

摘要翻译： 磁存储元件包括：第一磁化自由层，其被配置为由具有垂直磁各向异性的铁磁材料构成; 配置为设置在所述第一磁化自由层附近的参考层; 构造成邻近所述参考层设置的非磁性层; 以及台阶形成层，被配置为设置在所述第一磁化自由层的下方。 第一磁化自由层包括：固定磁化的第一磁化固定区域，固定磁化的第二磁化固定区域和被配置为与第一磁化固定区域和第二磁化固定区域连接的无磁化区域 。 第一磁化自由层具有台阶，凹槽和内部的突起中的至少一个。