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41.发明申请MULTI-FACTOR ADVANCED PROCESS CONTROL METHOD AND SYSTEM FOR INTEGRATED CIRCUIT FABRICATION 有权用于集成电路制造的多因素高级过程控制方法和系统公开(公告)号：US20130110276A1
公开(公告)日：2013-05-02
申请号：US13286337
申请日：2011-11-01
CPC分类号： G06F17/5063 , G06F2217/10
摘要： A method and system for integrated circuit fabrication is disclosed. In an example, the method includes determining a first process parameter of a wafer and a second process parameter of the wafer, the first process parameter and the second process parameter corresponding to different wafer characteristics; determining a variation of a device parameter of the wafer based on the first process parameter and the second process parameter; constructing a model for the device parameter as a function of the first process parameter and the second process parameter based on the determined variation of the device parameter of the wafer; and performing a fabrication process based on the model.
摘要翻译： 公开了一种用于集成电路制造的方法和系统。 在一个示例中，该方法包括确定晶片的第一工艺参数和晶片的第二工艺参数，对应于不同晶片特性的第一工艺参数和第二工艺参数; 基于所述第一处理参数和所述第二处理参数确定所述晶片的设备参数的变化; 基于确定的晶片的器件参数的变化，构造作为第一工艺参数和第二工艺参数的函数的器件参数的模型; 并基于该模型执行制造过程。
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公开(公告)号：US20130075624A1
公开(公告)日：2013-03-28
申请号：US13241392
申请日：2011-09-23
IPC分类号： H01J3/26
CPC分类号： H01J37/244 , H01J37/3171 , H01J2237/024 , H01J2237/24405 , H01J2237/24528 , H01J2237/24542
摘要： A beam monitoring device, method, and system is disclosed. An exemplary beam monitoring device includes a one dimensional (1D) profiler. The 1D profiler includes a Faraday having an insulation material and a conductive material. The beam monitoring device further includes a two dimensional (2D) profiler. The 2D profiler includes a plurality of Faraday having an insulation material and a conductive material. The beam monitoring device further includes a control arm. The control arm is operable to facilitate movement of the beam monitoring device in a longitudinal direction and to facilitate rotation of the beam monitoring device about an axis.
摘要翻译： 公开了一种光束监测装置，方法和系统。 示例性束监测装置包括一维（1D）轮廓仪。 1D轮廓仪包括具有绝缘材料和导电材料的法拉第。 光束监测装置还包括二维（2D）轮廓仪。 2D轮廓仪包括具有绝缘材料和导电材料的多个法拉第。 光束监视装置还包括控制臂。 控制臂可操作以便于在纵向方向上使光束监视装置的移动，并且便于光束监视装置围绕轴的旋转。
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公开(公告)号：US20130068248A1
公开(公告)日：2013-03-21
申请号：US13233568
申请日：2011-09-15
CPC分类号： H01L21/02057 , H01L21/67051
摘要： The present disclosure provides a method including providing a chamber having a first inlet and a second inlet. A solution of a de-ionized (DI) water and an acid (e.g., a dilute acid) is provided to the chamber via the first inlet. A carrier gas (e.g., N2) is provided to the chamber via the second inlet. The solution and the carrier gas are in the chamber and then from the chamber onto a single semiconductor wafer. In an embodiment, the solution includes a dilute HCl and DI water.
摘要翻译： 本公开提供了一种方法，包括提供具有第一入口和第二入口的室。 通过第一入口向腔室提供去离子（DI）水和酸（例如稀酸）的溶液。 载气（例如，N2）经由第二入口提供给腔室。 溶液和载气在室中，然后从室到单个半导体晶片。 在一个实施方案中，溶液包括稀HCl和去离子水。
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公开(公告)号：US20120181669A1
公开(公告)日：2012-07-19
申请号：US13409517
申请日：2012-03-01
申请人： Chin-Ming LIN , Chia-hung Huang , Chi-Ming Yang , Chin-Hsiang Lin , Yung-Cheng Chen , Chih-Wei Lin
发明人： Chin-Ming LIN , Chia-hung Huang , Chi-Ming Yang , Chin-Hsiang Lin , Yung-Cheng Chen , Chih-Wei Lin
IPC分类号： H01L23/544 , G06F17/50
CPC分类号： G03F7/70433
摘要： A method includes establishing an initial shot layout in which a number of shots are arranged in vertically aligned columns and horizontally aligned rows to cover a semiconductor wafer. At least one of a row of shots or a column of shots is shifted relative to an adjacent row or column of shots to establish at least one additional shot layout that differs from the initial shot layout in that shots in the at least one shifted row or column of shots are not aligned with the shots in the adjacent row or column of shots with which they were aligned in the initial shot layout. One of the initial shot layout and the at least one additional shot layout is selected as a final shot layout. The wafer is exposed to light using the final shot layout.
摘要翻译： 一种方法包括建立初始照片布局，其中多个照片布置在垂直排列的列和水平排列的行中以覆盖半导体晶片。 一排照片或一列照片中的至少一列相对于相邻的行或列发射位移，以建立与至少一个移位行中的拍摄中的初始镜头布局不同的至少一个附加镜头布局，或 一列照片不与在初始镜头布局中对齐的相邻行或照片列中的镜头对齐。 选择初始镜头布局和至少一个附加镜头布局之一作为最终镜头布局。 使用最终镜头布局将晶片曝光。
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公开(公告)号：US09138861B2
公开(公告)日：2015-09-22
申请号：US13396854
申请日：2012-02-15
申请人： Jiann Lih Wu , Bo-I Lee , Huang Soon Kang , Chi-Ming Yang , Chin-Hsiang Lin
发明人： Jiann Lih Wu , Bo-I Lee , Huang Soon Kang , Chi-Ming Yang , Chin-Hsiang Lin
IPC分类号： B24B53/00 , B24B53/017
CPC分类号： B24B53/017
摘要： The present disclosure relates to a two-phase cleaning element that enhances polishing pad cleaning so as to prevent wafer scratches and contamination in chemical mechanical polishing (CMP) processes. In some embodiments, the two-phase pad cleaning element comprises a first cleaning element and a second cleaning element configured to successively operate upon a section of a CMP polishing pad. The first cleaning element comprises a megasonic cleaning jet configured to utilize cavitation energy to dislodge particles embedded in the CMP polishing pad without damaging the surface of the polishing pad. The second cleaning element is configured to apply a high pressure mist, comprising two fluids, to remove by-products from the CMP polishing pad. By using megasonic cleaning to dislodge embedded particles a two-fluid mist to flush away by-products (e.g., including the dislodged embedded particles), the two-phase pad cleaning element enhances polishing pad cleaning.
摘要翻译： 本公开内容涉及增强抛光垫清洁以防止晶片划伤和化学机械抛光（CMP）工艺中的污染的两相清洁元件。 在一些实施例中，两相垫清洁元件包括第一清洁元件和第二清洁元件，其被配置为在CMP抛光垫的一部分上连续操作。 第一清洁元件包括配置为利用空穴能量去除嵌入在CMP抛光垫中的颗粒而不损坏抛光垫的表面的兆声波清洗喷嘴。 第二清洁元件构造成施加包括两种流体的高压雾以从CMP抛光垫移除副产物。 通过使用兆声波清洗来移除嵌入式颗粒的双液雾以冲走副产物（例如，包括移出的嵌入颗粒），两相垫清洁元件增强了抛光垫清洁。
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46.发明授权Ion beam dimension control for ion implantation process and apparatus, and advanced process control 有权离子束尺寸控制用于离子注入工艺和设备，以及先进的工艺控制公开(公告)号：US09070534B2
公开(公告)日：2015-06-30
申请号：US13463942
申请日：2012-05-04
IPC分类号： H01J37/317 , H01J37/147 , H01J37/08 , H01J37/30 , H01L21/265 , H01L21/67 , H01J37/302 , H01L21/687
CPC分类号： H01J37/3171 , H01J37/1474 , H01J37/20 , H01J37/3023 , H01J37/3172 , H01J2237/12 , H01J2237/20228 , H01J2237/30477 , H01J2237/30483 , H01L21/265 , H01L21/68764
摘要： A process control method is provided for ion implantation methods and apparatuses, to produce a high dosage area on a substrate such as may compensate for noted non-uniformities. In an ion implantation tool, separately controllable electrodes are provided as multiple sets of opposed electrodes disposed outside an ion beam. Beam blockers are positionable into the ion beam. Both the electrodes and beam blockers are controllable to reduce the area of the ion beam that is incident upon a substrate. The electrodes and beam blockers also change the position of the reduced-area ion beam incident upon the surface. The speed at which the substrate scans past the ion beam may be dynamically changed during the implantation process to produce various dosage concentrations in the substrate.
摘要翻译： 提供了用于离子注入方法和装置的过程控制方法，以在衬底上产生高剂量区域，例如可以补偿所指出的不均匀性。 在离子注入工具中，分离的可控电极被设置为设置在离子束外部的多组相对的电极。 光束阻挡器可以定位到离子束中。 电极和光束阻挡器都是可控的，以减少入射到基板上的离子束的面积。 电极和光束阻挡器也改变入射在表面上的减小面积的离子束的位置。 衬底扫描通过离子束的速度可以在植入过程期间动态地改变，以在衬底中产生各种剂量浓度。
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47.发明授权Multi-factor advanced process control method and system for integrated circuit fabrication 有权多因素先进的集成电路制造过程控制方法和系统公开(公告)号：US09031684B2
公开(公告)日：2015-05-12
申请号：US13286337
申请日：2011-11-01
IPC分类号： G06F19/00 , G06F17/50 , H01L29/00 , H01L27/082 , H05K1/00
CPC分类号： G06F17/5063 , G06F2217/10
摘要： A method and system for integrated circuit fabrication is disclosed. In an example, the method includes determining a first process parameter of a wafer and a second process parameter of the wafer, the first process parameter and the second process parameter corresponding to different wafer characteristics; determining a variation of a device parameter of the wafer based on the first process parameter and the second process parameter; constructing a model for the device parameter as a function of the first process parameter and the second process parameter based on the determined variation of the device parameter of the wafer; and performing a fabrication process based on the model.
摘要翻译： 公开了一种用于集成电路制造的方法和系统。 在一个示例中，该方法包括确定晶片的第一工艺参数和晶片的第二工艺参数，对应于不同晶片特性的第一工艺参数和第二工艺参数; 基于所述第一处理参数和所述第二处理参数确定所述晶片的设备参数的变化; 基于确定的晶片的器件参数的变化，构造作为第一工艺参数和第二工艺参数的函数的器件参数的模型; 并基于该模型执行制造过程。
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公开(公告)号：US08922122B2
公开(公告)日：2014-12-30
申请号：US13308614
申请日：2011-12-01
IPC分类号： H01J7/24
CPC分类号： H01J37/026 , H01J3/02 , H01J3/022 , H01J3/26 , H01J37/06 , H01J37/3171 , H01J2237/0041 , H01J2237/31705
摘要： The present disclosure provides for various advantageous methods and apparatus of controlling electron emission. One of the broader forms of the present disclosure involves an electron emission element, comprising an electron emitter including an electron emission region disposed between a gate electrode and a cathode electrode. An anode is disposed above the electron emission region, and a voltage set is disposed above the anode. A first voltage applied between the gate electrode and the cathode electrode controls a quantity of electrons generated from the electron emission region. A second voltage applied to the anode extracts generated electrons. A third voltage applied to the voltage set controls a direction of electrons extracted through the anode.
摘要翻译： 本公开提供了控制电子发射的各种有利的方法和装置。 本公开的更广泛形式之一涉及电子发射元件，其包括电子发射器，其包括设置在栅电极和阴极之间的电子发射区。 阳极设置在电子发射区域的上方，并且在阳极上设置电压组。 施加在栅电极和阴极之间的第一电压控制从电子发射区产生的电子量。 施加到阳极的第二电压提取产生的电子。 施加到电压组的第三电压控制通过阳极提取的电子的方向。
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公开(公告)号：US08709528B2
公开(公告)日：2014-04-29
申请号：US13338885
申请日：2011-12-28
IPC分类号： C23C16/00
CPC分类号： H01L21/68785 , C23C14/50 , C23C14/54 , C23C16/4582 , C23C16/52 , H01L21/67098 , H01L21/67288 , H01L21/6831 , Y10T29/49998
摘要： In a wafer processing method and a wafer processing system, a first property on a back side of a wafer is measured. The back side of the wafer is supported on a multi-zone chuck having a plurality of zones with controllable clamping forces. The wafer is secured to the multi-zone chuck by controlling the clamping forces in the corresponding zones in accordance with measured values of the first property in the zones.
摘要翻译： 在晶片处理方法和晶片处理系统中，测量晶片背面的第一特性。 晶片的背面被支撑在具有可控夹紧力的多个区域的多区域卡盘上。 通过根据区域中的第一属性的测量值控制相应区域中的夹紧力将晶片固定到多区域卡盘。
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公开(公告)号：US08657963B2
公开(公告)日：2014-02-25
申请号：US13240583
申请日：2011-09-22
IPC分类号： B08B1/00
CPC分类号： H01L21/67046 , H01L21/67051
摘要： The present disclosure provides a method and apparatus for cleaning a semiconductor wafer. In an embodiment of the method, a single wafer cleaning apparatus is provided and a wafer is positioned in the apparatus. A first chemical spray is dispensed onto a front surface of the wafer. A back surface of the wafer is cleaned while dispensing the first chemical spray. The cleaning of the back surface may include a brush and spray of cleaning fluids. An apparatus operable to clean the front surface and the back surface of a single semiconductor wafer is also described.
摘要翻译： 本公开提供了一种用于清洁半导体晶片的方法和装置。 在该方法的一个实施例中，提供单个晶片清洁装置，并且将晶片定位在装置中。 将第一化学喷雾分配到晶片的前表面上。 在分配第一化学喷雾的同时清洁晶片的背面。 后表面的清洁可以包括刷子和喷射清洁流体。 还描述了可操作以清洁单个半导体晶片的前表面和后表面的装置。
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