公开(公告)号：US20090039739A1

公开(公告)日：2009-02-12

申请号：US12078050

申请日：2008-03-26

申请人： Kenichi Tochi ,  Tatsuo Namikawa ,  Ken Unno ,  Takao Noguchi

发明人： Kenichi Tochi ,  Tatsuo Namikawa ,  Ken Unno ,  Takao Noguchi

IPC分类号： G01C19/56

CPC分类号： G01C19/5628 ,  B81B2201/025 ,  B81C1/0023 ,  G01C25/00 ,  H01L41/1132

摘要： The present invention provides an angular velocity sensor in which higher sensitivity for sensors is available even with a smaller base portion. The angular velocity sensor includes a fixed portion fixed to the top surface of a sensor element supporting portion of a casing, an upper detection arm and a lower detection arm, each of them being connected to the fixed portion on sides opposite to each other and extending along a plane parallel to the top surface of the sensor element supporting portion, and a pair of upper vibration arms connected to the fixed portion in such a manner as to form a pair of arms with the upper detection arm in between and extending in a direction parallel to the extending direction of the upper detection arm.

摘要翻译： 本发明提供了一种角速度传感器，其中传感器的更高的灵敏度即使在较小的基部也可获得。 角速度传感器包括固定到壳体的传感器元件支撑部分的上表面的固定部分，上检测臂和下检测臂，它们各自连接到彼此相对的侧面上的固定部分，并且延伸 沿着平行于传感器元件支撑部分的顶表面的平面，以及一对上部振动臂，其以固定部分的方式连接，以便形成一对臂，其中上部检测臂在其中并且在方向 平行于上检测臂的延伸方向。

公开(公告)号：US20060205225A1

公开(公告)日：2006-09-14

申请号：US11360394

申请日：2006-02-24

申请人： Kenichi Tochi ,  Masahiro Miyazaki ,  Takao Noguchi ,  Hiroshi Yamazaki ,  Ken Unno ,  Hirofumi Sasaki

发明人： Kenichi Tochi ,  Masahiro Miyazaki ,  Takao Noguchi ,  Hiroshi Yamazaki ,  Ken Unno ,  Hirofumi Sasaki

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L41/332 ,  Y10T29/42 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49126 ,  Y10T29/49155

摘要： The present invention provides an electronic device with improved characteristics and a method of making the electronic device. In a method of making an electronic device (piezoelectric device) 74 according to the present invention, an outer edge R1 of a piezoelectric film 52A formed on an electrode film 46A of a laminate 60 is located inside an outer edge R2 of the electrode film 46A. For this reason, in removal of a monocrystalline Si substrate 14 from a multilayer board 61, where an etching solution permeates between polyimide 72 and laminate 60, the etching solution circumvents the electrode film 46A before it reaches the piezoelectric film 52A. Namely, a route A of the etching solution to the piezoelectric film 52A is significantly extended by the electrode film 46A. In the method of making the electronic device 74, therefore, the etching solution is less likely to reach the piezoelectric film 52A. It significantly suppresses a situation of dissolution of the piezoelectric film 52A and realizes improvement in characteristics of the piezoelectric device 74 made.

摘要翻译： 本发明提供了具有改进特性的电子设备和制造该电子设备的方法。 在制造根据本发明的电子设备（压电器件）74的方法中，形成在层压体60的电极膜46A上的压电膜52A的外边缘R 1位于 电极膜46A。为此，为了从多层基板61去除单晶硅基板14，其中蚀刻溶液渗透在聚酰亚胺72和层压体60之间，蚀刻溶液在其到达压电体之前绕过电极膜46A 也就是说，通过电极膜46A，使压电膜52A的蚀刻溶液的路线A显着延长。因此，在制造电子器件74的方法中，蚀刻溶液不太可能达到 压电膜52A。显着抑制压电膜52A的溶解的情况，实现了制造的压电元件74的特性的提高。

公开(公告)号：US20050212389A1

公开(公告)日：2005-09-29

申请号：US11078565

申请日：2005-03-14

申请人： Kenichi Tochi ,  Takao Noguchi ,  Hiroshi Yamazaki ,  Ken Unno ,  Masahiro Miyazaki ,  Shigeru Shoji

发明人： Kenichi Tochi ,  Takao Noguchi ,  Hiroshi Yamazaki ,  Ken Unno ,  Masahiro Miyazaki ,  Shigeru Shoji

IPC分类号： H01L41/083 ,  H01L41/047 ,  H01L41/18 ,  H01L41/187 ,  H01L41/22 ,  H01L41/29 ,  H01L41/313 ,  H01L41/316

CPC分类号： H01L41/0471 ,  H01L41/0477 ,  H01L41/083 ,  H01L41/1875 ,  H01L41/27 ,  H01L41/316

摘要： Provided is a thin-film piezoelectric element which reduces the influence of an oxide film left on the electrode film on the degradation of element characteristics, and a method of making the thin-film piezoelectric element. The thin-film piezoelectric element has ZrO2 as the main component of the outermost layer of the oxide film which covers the laminate. Young's modulus of the ZrO2 is 190 GPa, giving a significantly low value compared with Young's modulus of MgO, 245 GPa. Consequently, the influence of the oxide film on the reduction in the displacement magnitude of the piezoelectric film is smaller than the influence of the MgO thin film left in the conventional thin-film piezoelectric element. As a result, the thin-film piezoelectric element decreases the influence of the oxide film on the degradation of element characteristics compared with the conventional thin-film piezoelectric element.

摘要翻译： 本发明提供一种能够减少留在电极膜上的氧化膜对元件特性劣化的影响的薄膜压电元件，以及制造该薄膜压电元件的方法。 薄膜压电元件以覆盖层叠体的氧化膜的最外层的主要成分为ZrO 2。 ZrO 2的杨氏模量为190GPa，与MgO的杨氏模量245GPa相比，显着低得多。 因此，氧化膜对压电膜的位移幅度的减小的影响小于常规薄膜压电元件中残留的MgO薄膜的影响。 结果，与传统的薄膜压电元件相比，薄膜压电元件降低了氧化膜对元件特性的降低的影响。

公开(公告)号：US06855996B2

公开(公告)日：2005-02-15

申请号：US10650764

申请日：2003-08-29

申请人： Takao Noguchi ,  Hisatoshi Saitou ,  Hidenori Abe ,  Yoshinari Yamashita

发明人： Takao Noguchi ,  Hisatoshi Saitou ,  Hidenori Abe ,  Yoshinari Yamashita

IPC分类号： C30B29/68 ,  H01L21/20 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/365 ,  H01L29/04 ,  H01L41/08 ,  H01L41/09 ,  H01L41/18 ,  H01L41/22 ,  H01L41/29 ,  H01L41/316 ,  H01L41/319 ,  H01L41/39 ,  H03H3/02 ,  H03H9/17 ,  H01S3/19

CPC分类号： H03H3/02 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02609 ,  H01L21/2855 ,  H01L21/32051 ,  H01L29/045 ,  H01L41/0477 ,  H01L41/0815 ,  H01L41/29 ,  H01L41/316 ,  H01L41/319 ,  H01L2224/48091 ,  H03H9/02015 ,  H03H9/02133 ,  H03H9/174 ,  H03H9/176 ,  H01L2924/00014

摘要： An electronic device substrate structure including a substrate 2, a metal thin film 4 as a (111)-oriented film of a face-centered cubic structure or as a (0001)-oriented film of a hexagonal closest packed structure formed on the substrate 2, and a wurtzite type thin film 5 as a (0001)-oriented film of a wurtzite crystal structure formed on the metal thin film 4, wherein: each of the two thin films is a polycrystalline film containing at least two kinds of crystal grains different in direction of crystal orientation in the plane; when the metal thin film 4 is a (111)-oriented film, axes in the plane of the wurtzite type thin film 5 are parallel to axes in the plane of the metal thin film 4; and when the metal thin film 4 is a (0001)-oriented film, axes in the plane of the wurtzite type thin film 5 are parallel to axes in the plane of the metal thin film 4.

摘要翻译： 一种电子器件基板结构，其包括基板2，作为面心立方结构的（111）取向膜的金属薄膜4或形成在基板2上的作为（0001）取向的六方孔密堆积结构的膜 ，以及形成在金属薄膜4上的纤锌矿晶体结构的（0001）取向膜的纤锌矿型薄膜5，其中：两个薄膜中的每一个是含有至少两种不同晶粒的多晶薄膜 在平面中的晶体取向方向; 当金属薄膜4为（111）取向膜时，纤锌矿型薄膜5的平面中的<11-20>轴在金属薄膜4的平面上平行于<1-10>轴; 并且当金属薄膜4为（0001）取向膜时，纤锌矿型薄膜5的平面内的<11-20>轴在金属薄膜4的平面上平行于<11-20> 。

公开(公告)号：US5810923A

公开(公告)日：1998-09-22

申请号：US644829

申请日：1996-05-10

申请人： Yoshihiko Yano ,  Takao Noguchi ,  Katsuto Nagano

发明人： Yoshihiko Yano ,  Takao Noguchi ,  Katsuto Nagano

IPC分类号： C30B23/02 ,  H01L21/28 ,  H01L21/316 ,  H01L21/336 ,  H01L29/51 ,  C03B25/02

CPC分类号： H01L21/28194 ,  C30B23/02 ,  C30B29/22 ,  H01L21/316 ,  H01L29/517 ,  H01L29/66575

摘要： The invention provides an oxide thin film in the form of an epitaxial film of the composition: Zr.sub.1-x R.sub.x O.sub.2-.delta. wherein R is a rare earth metal inclusive of Y, x=0 to 0.75, preferably x=0.20 to 0.50, formed on a surface of a single crystal silicon substrate. A rocking curve of the film has a half-value width of up to 1.50.degree.. The film has a ten point mean roughness Rz of up to 0.60 nm across a reference length of 500 nm. An epitaxial film of the composition ZrO.sub.2 is constructed by unidirectionally oriented crystals. When a functional film is to be formed on the oxide thin film serving as a buffer film, an adequately epitaxially grown functional film of quality is available. Particularly when the single crystal substrate is rotated within its plane, an oxide thin film of uniform high quality having an area as large as 10 cm.sup.2 or more is obtained.

摘要翻译： 本发明提供了一种组成为Zr1-xRxO2-δ的外延膜形式的氧化物薄膜，其中R是含有Y，x = 0至0.75，优选x = 0.20至0.50的稀土金属，优选x = 0.20至0.50，形成于 单晶硅衬底的表面。 薄膜的摇摆曲线半值宽度可达1.50度。 该膜在500nm的参考长度上具有高达0.60nm的十点平均粗糙度Rz。 组成ZrO2的外延膜由单向取向晶体构成。 当在用作缓冲膜的氧化物薄膜上形成功能膜时，可以获得质量良好的外延生长的功能膜。 特别是当单晶基板在其平面内旋转时，获得具有10cm 2或更大面积的均匀高质量的氧化物薄膜。

公开(公告)号：US5081858A

公开(公告)日：1992-01-21

申请号：US717028

申请日：1991-06-18

申请人： Yukio Ito ,  Tadashi Akazawa ,  Takao Noguchi

发明人： Yukio Ito ,  Tadashi Akazawa ,  Takao Noguchi

IPC分类号： B21F5/00 ,  B05D1/06 ,  B21J3/00 ,  C10N40/24 ,  F16N15/00

CPC分类号： F16N15/00 ,  B21J3/00

摘要： A method for forming a lubricant coat on a surface of steel slug to be forged and a forging device provided with a lubricant coat forming system. The method makes possible the forging of hard to work material, such as stainless steel. Highly durable parts can be manufactured easily. The durability of the metal molds of the forging device is increased, thereby decreasing the cost for the manufacture of the parts. In the method, the uniformly thick lubricant coat can be formed easily even on the transformed end surfaces of the material being worked, providing effective lubrication. The lubricant coat forming member can replace the oil lubrication of the related-art forging device of the inline type, in which the cut end surfaces of the material are not lubricated, without modifying the structure of the related-art forging device especially. The forging device of this invention continuously forges the material, lengthening the interval for replacing metal molds and decreasing the cost for the manufacture of the parts.

公开(公告)号：US08183749B2

公开(公告)日：2012-05-22

申请号：US12458274

申请日：2009-07-07

申请人： Kenichi Tochi ,  Masahiro Miyazaki ,  Takao Noguchi ,  Hiroshi Yamazaki ,  Ken Unno ,  Hirofumi Sasaki

发明人： Kenichi Tochi ,  Masahiro Miyazaki ,  Takao Noguchi ,  Hiroshi Yamazaki ,  Ken Unno ,  Hirofumi Sasaki

IPC分类号： H01L41/22

CPC分类号： H01L41/332 ,  Y10T29/42 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49126 ,  Y10T29/49155

摘要： The present invention provides an electronic device with improved characteristics and a method of making the electronic device. In a method of making an electronic device (piezoelectric device) 74 according to the present invention, an outer edge R1 of a piezoelectric film 52A formed on an electrode film 46A of a laminate 60 is located inside an outer edge R2 of the electrode film 46A. For this reason, in removal of a monocrystalline Si substrate 14 from a multilayer board 61, where an etching solution permeates between polyimide 72 and laminate 60, the etching solution circumvents the electrode film 46A before it reaches the piezoelectric film 52A. Namely, a route A of the etching solution to the piezoelectric film 52A is significantly extended by the electrode film 46A. In the method of making the electronic device 74, therefore, the etching solution is less likely to reach the piezoelectric film 52A. It significantly suppresses a situation of dissolution of the piezoelectric film 52A and realizes improvement in characteristics of the piezoelectric device 74 made.

摘要翻译： 本发明提供了具有改进特性的电子设备和制造该电子设备的方法。 在制造根据本发明的电子设备（压电器件）74的方法中，形成在层压体60的电极膜46A上的压电膜52A的外边缘R1位于电极膜46A的外边缘R2的内侧 。 因此，从蚀刻液在聚酰亚胺72和层叠体60之间渗透的多层基板61去除单晶Si基板14时，蚀刻液在其到达压电膜52A之前就绕过电极膜46A。 也就是说，通过电极膜46A显着地延长到压电膜52A的蚀刻溶液的路线A. 因此，在制造电子设备74的方法中，蚀刻溶液不太可能到达压电膜52A。 这显着地抑制了压电膜52A的溶解情况，并且实现了所制作的压电装置74的特性的改善。

公开(公告)号：US20090271962A1

公开(公告)日：2009-11-05

申请号：US12458274

申请日：2009-07-07

申请人： Kenichi Tochi ,  Masahiro Miyazaki ,  Takao Noguchi ,  Hiroshi Yamazaki ,  Ken Unno ,  Hirofumi Sasaki

发明人： Kenichi Tochi ,  Masahiro Miyazaki ,  Takao Noguchi ,  Hiroshi Yamazaki ,  Ken Unno ,  Hirofumi Sasaki

IPC分类号： H01L41/22 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L41/332 ,  Y10T29/42 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49126 ,  Y10T29/49155

摘要： The present invention provides an electronic device with improved characteristics and a method of making the electronic device. In a method of making an electronic device (piezoelectric device) 74 according to the present invention, an outer edge R1 of a piezoelectric film 52A formed on an electrode film 46A of a laminate 60 is located inside an outer edge R2 of the electrode film 46A. For this reason, in removal of a monocrystalline Si substrate 14 from a multilayer board 61, where an etching solution permeates between polyimide 72 and laminate 60, the etching solution circumvents the electrode film 46A before it reaches the piezoelectric film 52A. Namely, a route A of the etching solution to the piezoelectric film 52A is significantly extended by the electrode film 46A. In the method of making the electronic device 74, therefore, the etching solution is less likely to reach the piezoelectric film 52A. It significantly suppresses a situation of dissolution of the piezoelectric film 52A and realizes improvement in characteristics of the piezoelectric device 74 made.

摘要翻译： 本发明提供了具有改进特性的电子设备和制造该电子设备的方法。 在制造根据本发明的电子设备（压电器件）74的方法中，形成在层压体60的电极膜46A上的压电膜52A的外边缘R1位于电极膜46A的外边缘R2的内侧 。 因此，从蚀刻液在聚酰亚胺72和层叠体60之间渗透的多层基板61去除单晶Si基板14时，蚀刻液在其到达压电膜52A之前就绕过电极膜46A。 也就是说，通过电极膜46A显着地延长到压电膜52A的蚀刻溶液的路线A. 因此，在制造电子设备74的方法中，蚀刻溶液不太可能到达压电膜52A。 这显着地抑制了压电膜52A的溶解情况，并且实现了所制作的压电装置74的特性的改善。

公开(公告)号：US20080236281A1

公开(公告)日：2008-10-02

申请号：US12078031

申请日：2008-03-26

申请人： Takao Noguchi ,  Kenichi Tochi ,  Ken Unno ,  Tatsuo Namikawa

发明人： Takao Noguchi ,  Kenichi Tochi ,  Ken Unno ,  Tatsuo Namikawa

IPC分类号： G01C19/56

CPC分类号： G01C19/5607

摘要： An angular velocity sensor of a horizontally located type, in which influence of a translational acceleration applied thereto from a lateral direction is readily removed and a fixed portion thereof is easily fixed, is provided. It includes a fixed portion fixed to the top surface of a sensor element supporting portion of a casing, an upper detection arm portion and a lower detection arm portion respectively connected to the fixed portion on sides opposite to each other and extending along a plane parallel to the top surface of the sensor element supporting portion, and a pair of upper vibration arms connected to the fixed portion with the upper detection arm portion in between. The fixed portion includes one or more slits extending at least in a direction intersecting with the extending direction of the upper detection arm portion.

摘要翻译： 提供了一种水平定位型的角速度传感器，其中容易地去除从横向施加到其上的平移加速度的影响并且其固定部分容易固定。 它包括固定到壳体的传感器元件支撑部分的顶表面的固定部分，上检测臂部分和下检测臂部分，其分别连接到彼此相对的侧面上的固定部分，并且沿平行于 传感器元件支撑部分的顶表面和连接到固定部分的上部振动臂，上部检测臂部分在其间。 固定部分包括至少沿与上检测臂部分的延伸方向交叉的方向延伸的一个或多个狭缝。

公开(公告)号：US20080148848A1

公开(公告)日：2008-06-26

申请号：US12004069

申请日：2007-12-20

申请人： Takao Noguchi ,  Kenichi Tochi ,  Ken Unno ,  Tatsuo Namikawa

发明人： Takao Noguchi ,  Kenichi Tochi ,  Ken Unno ,  Tatsuo Namikawa

IPC分类号： G01C19/56

CPC分类号： G01C19/5607

摘要： An angular velocity sensor of a horizontally located type, which can easily remove the translational acceleration influence thereto from the lateral direction, is provided. It includes a fixed portion fixed to the surface of a sensor element supporting portion of a casing, an upper detection arm and a lower detection arm, each of them being connected to the fixed portion on sides opposite to each other and extending along a plane parallel to the surface place of the sensor element supporting portion, and a pair of upper vibration arms connected to the fixed portion in such a manner as to form a pair of arms with the upper detection arm in between and extending in a direction parallel to the extending direction of the upper detection arm.

摘要翻译： 提供了一种水平定位型的角速度传感器，其可以容易地从横向方向去除对其的平移加速度影响。 它包括固定到壳体的传感器元件支撑部分的表面的固定部分，上检测臂和下检测臂，它们中的每一个连接到彼此相对的侧面上的固定部分，并且沿平行的平面延伸 到传感器元件支撑部分的表面位置，以及一对上部振动臂，其以固定部分的方式连接，以便形成一对臂，其中上部检测臂在与延伸部分平行的方向上延伸 上检测臂的方向。