Method of fabricating a semiconductor device
    41.
    发明授权
    Method of fabricating a semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US06613593B2

    公开(公告)日:2003-09-02

    申请号:US09942862

    申请日:2001-08-31

    IPC分类号: G01R3126

    CPC分类号: G01N23/2251

    摘要: A method and apparatus for inspecting a semiconductor device in which failure occurrence conditions on a whole wafer are estimated by calculating the statistic of potential contrasts in pattern sections from sampled images to implement higher throughput, and defective conditions of a process are detected at an early stage with the help of time series data of the estimated result.

    摘要翻译: 通过从采样图像中计算图案部分中的潜在对比度的统计量来估计半导体装置的检查方法和装置,其中通过计算采样图像中的图形部分的电位对比度的统计量来估计整个晶片的故障发生状况,以实现更高的吞吐量, 在估计结果的时间序列数据的帮助下。

    Method and its system for calibrating measured data between different measuring tools
    42.
    发明授权
    Method and its system for calibrating measured data between different measuring tools 有权
    用于校准不同测量工具之间测量数据的方法及其系统

    公开(公告)号:US08214166B2

    公开(公告)日:2012-07-03

    申请号:US12137779

    申请日:2008-06-12

    IPC分类号: G01P21/00

    摘要: A method, and a corresponding system, are provided for calibrating data of an object measured by different measuring tools, including measuring a Critical-Dimension (CD) and roughness of an object by using a CD-SEM tool, calculating a number of cross section measurement points required for calibration, by statistically processing the roughness of the object, measuring the cross section of the object by using a cross section measuring tool to obtain cross section data at the calculated number of cross section measurement points, calculating the average measurement of the cross section measurement height, and calculating a calibration correction value that is a function of a difference between the average CD measurement of the object and the average measurement of the cross section measurement height of the object.

    摘要翻译: 提供了一种方法和相应的系统,用于校准由不同测量工具测量的物体的数据,包括通过使用CD-SEM工具测量物体的临界尺寸(CD)和粗糙度,计算横截面数 校准所需的测量点,通过统计学处理物体的粗糙度,通过使用横截面测量工具测量物体的横截面,以在计算出的横截面测量点的数量上获得横截面数据,计算平均测量值 横截面测量高度,以及计算作为对象的平均CD测量与对象的横截面测量高度的平均测量之间的差的函数的校准校正值。

    Pattern Shape Estimation Method and Pattern Measuring Device
    43.
    发明申请
    Pattern Shape Estimation Method and Pattern Measuring Device 有权
    图案形状估计方法和图案测量装置

    公开(公告)号:US20120151428A1

    公开(公告)日:2012-06-14

    申请号:US13390354

    申请日:2010-07-15

    IPC分类号: G06F17/50

    摘要: The present invention aims at proposing a library creation method and a pattern shape estimation method in which it is possible, when estimating a shape based on comparison between an actual waveform and a library, to appropriately estimate the shape.As an illustrative embodiment to achieve the object, there are proposed a method of selecting a pattern by referring to a library, a method of creating a library by use of pattern cross-sectional shapes calculated through an exposure process simulation in advance, and a method for selecting a pattern shape stored in the library.

    摘要翻译: 本发明旨在提出一种库创建方法和图案形状估计方法,其中当基于实际波形和库之间的比较来估计形状时,可以适当地估计形状。 作为实现该目的的说明性实施例,提出了通过参照库来选择图案的方法,通过使用预先通过曝光处理模拟计算的图案横截面形状来创建库的方法,以及方法 用于选择存储在库中的图案形状。

    Sample and method for evaluating resolution of scanning electron microscope, and electron scanning microscope
    44.
    发明申请
    Sample and method for evaluating resolution of scanning electron microscope, and electron scanning microscope 有权
    扫描电子显微镜和电子扫描显微镜的分辨率评估样本和方法

    公开(公告)号:US20100133426A1

    公开(公告)日:2010-06-03

    申请号:US12588517

    申请日:2009-10-19

    IPC分类号: G01D18/00 G01N23/00

    CPC分类号: G01N23/225 H01J2237/2823

    摘要: A method of evaluating a resolution of a scanning electron microscope includes picking up a first image of a concave and convex pattern formed on a surface of a sample utilizing a first scanning electron microscope, picking up a second image of the concave and convex pattern on the sample utilizing a second scanning electron microscope, respectively processing the first image and the second image in order to evaluate unevenness in resolution between the first scanning electron microscope and the second scanning electron microscope, and determining whether a height of the concave and convex pattern as measured from a bottom thereof is sufficient so that no affection by a secondary electron emitted from the bottom of the concave and convex pattern is exhibited.

    摘要翻译: 评价扫描型电子显微镜的分辨率的方法包括利用第一扫描电子显微镜拾取形成在样品表面上的凹凸图案的第一图像,在第二图像上拾取凹凸图案的第二图像 分别处理第一图像和第二图像以评估第一扫描电子显微镜和第二扫描电子显微镜之间的分辨率的不均匀性,以及确定测量的凹凸图案的高度是否为第二扫描电子显微镜 从底部开始就足够了,从而不会发生由凹凸图案的底部发射的二次电子的影响。

    Method and Its System for Calibrating Measured Data Between Different Measuring Tools
    45.
    发明申请
    Method and Its System for Calibrating Measured Data Between Different Measuring Tools 有权
    用于校准不同测量工具之间测量数据的方法及其系统

    公开(公告)号:US20080319696A1

    公开(公告)日:2008-12-25

    申请号:US12137779

    申请日:2008-06-12

    IPC分类号: G01C25/00

    摘要: The present invention relates to a method and its system for calibrating measured data between different measuring tools. A method of calibrating measured data between different measuring tools includes the steps of: measuring the CD average dimension and roughness of an object to be measured using a CD-SEM tool; calculating the number of the cross section measurement points required for calibration by statistically processing the roughness; measuring the cross section of the object to be measured using the cross section measuring tool to satisfy the number of the cross section measurement points, thereby calculating the CD average dimension of the cross section measurement height specified in the obtained cross section measurement result; and calculating a calibration correction value being a difference between the CD average dimension of the object and the CD average dimension of the cross section measurement height of the object.

    摘要翻译: 本发明涉及用于校准不同测量工具之间的测量数据的方法及其系统。 在不同测量工具之间校准测量数据的方法包括以下步骤:使用CD-SEM工具测量待测物体的CD平均尺寸和粗糙度; 通过统计处理粗糙度来计算校准所需的横截面测量点的数量; 使用截面测量工具测量被测量物体的横截面以满足横截面测量点的数量,从而计算得到的横截面测量结果中规定的横截面测量高度的CD平均尺寸; 并且计算校正校正值,该校正校正值是对象的CD平均尺寸与对象的横截面测量高度的CD平均尺寸之间的差。

    Pattern inspection method and system therefor
    49.
    发明申请
    Pattern inspection method and system therefor 审中-公开
    图案检验方法及系统

    公开(公告)号:US20070131877A9

    公开(公告)日:2007-06-14

    申请号:US10062666

    申请日:2002-02-05

    IPC分类号: G01N23/00

    摘要: Conventionally, defect data outputted by an inspection system comprised only characteristic quantitative data, such as coordinate data, area, and projected length, and only the coordinate data for moving to a defect location could be utilized effectively. By contrast, the present invention, by using image data in addition to characteristic quantitative data as the defect data for an inspection system, enables the retrieval of image data via an outside results confirmation system. Further, in the case of defect data of a plurality of substrates, it is enabled to display a defect image during inspection by the fact that similar defects are retrieved via images and retrieval results are displayed as trends makes it possible to display a defect image during inspection by searching similar defects on images and displaying them as a trend, designating a substrate on the trend, thereby displaying the defect map thereof and designating a defect on the defect map.

    摘要翻译: 通常,由检查系统输出的缺陷数据仅包括诸如坐标数据,面积和投影长度的特征定量数据,并且仅有用于移动到缺陷位置的坐标数据可以被有效地利用。 相比之下,本发明通过使用除了特征定量数据之外的图像数据作为检查系统的缺陷数据,能够经由外部结果确认系统检索图像数据。 此外,在多个基板的缺陷数据的情况下,能够通过图像检索相似缺陷的事实在检查期间显示缺陷图像,并且检索结果被显示为趋势,使得可以在显示缺陷图像期间显示缺陷图像 通过搜索图像上的类似缺陷并将其显示为趋势,指定趋势上的基板,从而显示其缺陷图并指定缺陷图上的缺陷来进行检查。

    Method and apparatus for inspecting a semiconductor device
    50.
    发明授权
    Method and apparatus for inspecting a semiconductor device 有权
    用于检查半导体器件的方法和装置

    公开(公告)号:US07116817B2

    公开(公告)日:2006-10-03

    申请号:US11235136

    申请日:2005-09-27

    IPC分类号: G06K9/00

    CPC分类号: G01N23/2251

    摘要: A method and apparatus for inspecting a wafer in which a focused charged particle beam is irradiated onto a surface of a wafer on which patterns are formed through a semiconductor device fabrication process, a secondary charged particle image of a desired area of the wafer is obtained by detecting secondary charged particles emitted from the surface of the wafer, and information about image feature amount of each pattern within the desired area from the obtained secondary charged particle beam image. The information about image feature amount is compared with a preset value, and on the basis of a result of the comparison, a quality of patterns which have been formed around the desired area is estimated, and information of a result of the estimation is outputted.

    摘要翻译: 一种用于通过半导体器件制造工艺检查其中聚焦的带电粒子束照射到其上形成有图案的晶片的表面上的晶片的方法和装置,通过以下方式获得晶片的期望区域的二次带电粒子图像: 从所获得的二次带电粒子束图像中检测从所述晶片的表面发射的次级带电粒子和关于期望区域内的每个图案的图像特征量的信息。 将关于图像特征量的信息与预设值进行比较,并且基于比较结果,估计在期望区域周围形成的图案的质量,并且输出估计结果的信息。