摘要:
The present invention discloses a method for fabricating a semiconductor device, comprising: providing a translucent portion; forming a covering layer comprised of one or more metals on the translucent portion by vapor deposition; providing kinetic energy to the covering layer for forming a periodic mask; forming a periodic structure on the translucent portion by using the periodic mask.
摘要:
A drawing processing apparatus and method wherein scrolling display which provides no sense of incongruity is achieved in 3D display. 3D information is produced using information in a drawing object range extracted as a predetermined range on map data. The drawing object range of an object of the 3D drawing process is moved in response to a scrolling operation. While the drawing object range is moved, 3D image data are successively produced using the drawing object range at every point of time and outputted to implement 3D display on a display screen. Thereupon, the drawing object range to be used for the 3D drawing is moved such that individual portions in the drawing object range are moved by movement amounts determined with reference to a distance in a perpendicular direction at a reference position in the drawing object range.
摘要:
With use of a simplified program or calculating device for motion compensation, a video decoding device decodes video data compressed by motion detection operations on macroblock units, as in the MPEG-4AVC standard. The video decoding device splits compressed data blocks of the prescribed size, 16×16 pixels for instance, to generate sub-blocks, which are smaller than the blocks and on which the video decoding device is able to execute motion compensation operations. The video decoding device duplicates a motion vector assigned to a given block to generate as many motion vectors as there are sub-blocks in the given block, and executes motion compensation on each sub-block using the corresponding duplicate motion vector. Data resulting from the motion compensation operation on each sub-block is combined to obtain a target block corresponding to the given block.
摘要:
A vehicle-mounted apparatus includes a radio frequency identification (RFID) reading unit for reading an RFID signal from an RFID tag attached to an article placed in a vehicle, a system controller for determining the nature of the article in the vehicle on the basis of the read RFID signal, and an user interface unit for outputting the nature. The system controller determines whether the article placed in the vehicle is dangerous or not. If the article is determined to be dangerous, the system controller outputs information for warning a user via the user interface unit.
摘要:
The present invention allows an existing single-sequentialized navigation main unit to be virtually multi-sequentialized with simple structure. An intervention device 3 receives from a front monitor 4 and a rear monitor 5 acquisition requests which request various kinds of screens from a navigation main unit 2. In response to the acquisition requests, the intervention device 3 performs a mediating process or an adjusting process for various kinds of screens which are received from the navigation main unit 2 and are scheduled to be output to the front monitor 4 and the rear monitor 5. Therefore, even if the intervention device 3 receives a plurality of acquisition requests from the front monitor 4 and the rear monitor 5, the intervention device 3 can sequentially send the acquisition requests one by one to the navigation main unit 2. Accordingly, this allows the navigation main unit 2 to be virtually multi-sequentialized.
摘要:
An apparatus is provided for controlling a synchronous motor. The apparatus comprises a first calculator calculating a voltage characteristic showing a characteristic of voltages to be applied to armature coils of a stator and a producer producing a command signal to provide the armature coils with the phase currents on the basis of the voltage characteristic. The apparatus still comprises a current detector detecting a signal depending on an amplitude of at least one of the phase currents, a second calculator calculating a rate of changes in a current amount indicating amplitudes of the phase currents, by using the signal from the current detector, and a feed-back member feed-backing the rate of changes in the current amount into the calculation of the voltage characteristic.
摘要:
An epitaxial substrate for manufacturing field effect transistor (FET) that has heterojunction structure consisting of at least a channel layer made of gallium nitride or gallium indium nitride and a barrier layer made of aluminum gallium nitride formed successively on the principal plane of the sapphire substrate, wherein the principal plane of the sapphire substrate semiconductor is inclined from (01-12) plane toward (0001) plane by an off-angle α that is in a range of 0°
摘要:
The overhead wire tensioning device of the present invention is improved in reliability and eliminates the need for constant maintenance work by protecting the slide mechanism between the cylinder case of the gas spring type overhead wire tensioning device and the cylinder rod, and the pivoting mechanism for the connecting rod connecting this cylinder with the overhead wire from external influences.
摘要:
An optical semiconductor device having a plurality of GaN-based semiconductor layers containing a strained quantum well layer in which the strained quantum well layer has a piezoelectric field that depends on the orientation of the strained quantum well layer when the quantum layer is grown. In the present invention, the strained quantum well layer is grown with an orientation at which the piezoelectric field is less than the maximum value of the piezoelectric field strength as a function of the orientation. In devices having GaN-based semiconductor layers with a wurtzite crystal structure, the growth orientation of the strained quantum well layer is tilted at least 1° from the {0001} direction of the wurtzite crystal structure. In devices having GaN-based semiconductor layers with a zincblende crystal structure, the growth orientation of the strained quantum well layer is tilted at least 1° from the {111} direction of the zincblende crystal structure. In the preferred embodiment of the present invention, the growth orientation is chosen to minimize the piezoelectric field in the strained quantum well layer.