公开(公告)号：US08610106B2

公开(公告)日：2013-12-17

申请号：US13213821

申请日：2011-08-19

申请人： Tomonari Shioda ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Tomonari Shioda ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L33/06

CPC分类号： H01L33/40 ,  H01L33/06 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting part. The light emitting part is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, a first n-side intermediate layer and a first p-side intermediate layer. The barrier layer, the well layer, the n-side layer and the p-side intermediate layer include a nitride semiconductor. An In composition ratio in the n-side layer decreases along a first direction from the n-type layer toward the p-type layer. An In composition ratio in the p-side layer decreases along the first direction. An average change rate of the In ratio in the p-side layer is lower than an average change rate of the In ratio in the n-side layer.

摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光部分。 发光部分设置在n型半导体层和p型半导体层之间，并且包括第一发光层。 第一发光层包括第一阻挡层，第一阱层，第一n侧中间层和第一p侧中间层。 阻挡层，阱层，n侧层和p侧中间层包括氮化物半导体。 n侧层的An组成比沿着从n型层向p型层的第一方向减小。 P侧层的In组成比沿着第一方向减小。 p侧的In比的平均变化率低于n侧层的In比的平均变化率。

公开(公告)号：US08598605B2

公开(公告)日：2013-12-03

申请号：US13601454

申请日：2012-08-31

申请人： Naoharu Sugiyama ,  Taisuke Sato ,  Kotaro Zaima ,  Jumpei Tajima ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Hisashi Yoshida ,  Shinya Nunoue

发明人： Naoharu Sugiyama ,  Taisuke Sato ,  Kotaro Zaima ,  Jumpei Tajima ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Hisashi Yoshida ,  Shinya Nunoue

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/32 ,  H01L33/06 ,  H01L33/12

摘要： According to one embodiment, a semiconductor light-emitting device includes: a first conductivity type first semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in a (0001) surface; a second conductivity type second semiconductor layer containing a nitride semiconductor crystal and having a tensile stress in the (0001) surface; a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, containing a nitride semiconductor crystal, and having an average lattice constant larger than the lattice constant of the first semiconductor layer; and a first stress application layer provided on a side opposite to the light emitting layer of the first semiconductor layer and applying a compressive stress to the first semiconductor layer.

摘要翻译： 根据一个实施例，半导体发光器件包括：包含氮化物半导体晶体并且在（0001）表面中具有拉伸应力的第一导电类型的第一半导体层; 含有氮化物半导体晶体并在（0001）表面具有拉伸应力的第二导电类型的第二半导体层; 设置在所述第一半导体层和所述第二半导体层之间的包含氮化物半导体晶体并且具有大于所述第一半导体层的晶格常数的平均晶格常数的发光层; 以及第一应力施加层，其设置在与所述第一半导体层的所述发光层相对的一侧上，并向所述第一半导体层施加压缩应力。

公开(公告)号：US20120138890A1

公开(公告)日：2012-06-07

申请号：US13213821

申请日：2011-08-19

申请人： Tomonari SHIODA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

发明人： Tomonari SHIODA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC分类号： H01L33/06

CPC分类号： H01L33/40 ,  H01L33/06 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting part. The light emitting part is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, a first n-side intermediate layer and a first p-side intermediate layer. The barrier layer, the well layer, the n-side layer and the p-side intermediate layer include a nitride semiconductor. An In composition ratio in the n-side layer decreases along a first direction from the n-type layer toward the p-type layer. An In composition ratio in the p-side layer decreases along the first direction. An average change rate of the In ratio in the p-side layer is lower than an average change rate of the In ratio in the n-side layer.

摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光部分。 发光部分设置在n型半导体层和p型半导体层之间，并且包括第一发光层。 第一发光层包括第一阻挡层，第一阱层，第一n侧中间层和第一p侧中间层。 阻挡层，阱层，n侧层和p侧中间层包括氮化物半导体。 n侧层的An组成比沿着从n型层向p型层的第一方向减小。 P侧层的In组成比沿着第一方向减小。 p侧的In比的平均变化率低于n侧层的In比的平均变化率。

公开(公告)号：US20130069098A1

公开(公告)日：2013-03-21

申请号：US13677828

申请日：2012-11-15

申请人： Toshiki Hikosaka ,  Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

发明人： Toshiki Hikosaka ,  Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

IPC分类号： H01L33/50

CPC分类号： H01L33/50 ,  H01L24/29 ,  H01L24/32 ,  H01L33/44 ,  H01L33/504 ,  H01L33/58 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： According to one embodiment, a light emitting device includes a semiconductor light emitting element to emit a first light, a mounting member, first and second wavelength conversion layers and a transparent layer. The first wavelength conversion layer is provided between the element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The semiconductor light emitting element is disposed between the second wavelength conversion layer and the first wavelength conversion layer. The second wavelength conversion layer absorbs the first light and emits a third light having a wavelength longer than the wavelength of the first light. The transparent layer is provided between the element and the second wavelength conversion layer. The transparent layer is transparent to the first, second, and third lights.

摘要翻译： 根据一个实施例，发光器件包括发射第一光的半导体发光元件，安装构件，第一和第二波长转换层以及透明层。 第一波长转换层设置在与安装构件接触的元件和安装构件之间。 第一波长转换层吸收第一光并发射波长比第一光的波长长的第二光。 半导体发光元件设置在第二波长转换层和第一波长转换层之间。 第二波长转换层吸收第一光并发射波长比第一光的波长长的第三光。 透明层设置在元件和第二波长转换层之间。 透明层对于第一，第二和第三光是透明的。

公开(公告)号：US08368104B2

公开(公告)日：2013-02-05

申请号：US12874413

申请日：2010-09-02

申请人： Toshiki Hikosaka ,  Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

发明人： Toshiki Hikosaka ,  Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

IPC分类号： H01L33/00

CPC分类号： H01L33/50 ,  H01L24/29 ,  H01L24/32 ,  H01L33/44 ,  H01L33/504 ,  H01L33/58 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： According to one embodiment, a light emitting device includes a semiconductor light emitting element to emit a first light, a mounting member, first and second wavelength conversion layers and a transparent layer. The first wavelength conversion layer is provided between the element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The semiconductor light emitting element is disposed between the second wavelength conversion layer and the first wavelength conversion layer. The second wavelength conversion layer absorbs the first light and emits a third light having a wavelength longer than the wavelength of the first light. The transparent layer is provided between the element and the second wavelength conversion layer. The transparent layer is transparent to the first, second, and third lights.

公开(公告)号：US20120056526A1

公开(公告)日：2012-03-08

申请号：US13034120

申请日：2011-02-24

申请人： Iwao MITSUISHI ,  Shinya Nunoue ,  Takahiro Sato ,  Yumi Fukuda ,  Aoi Okada ,  Naotoshi Matsuda ,  Toshiki Hikosaka

发明人： Iwao MITSUISHI ,  Shinya Nunoue ,  Takahiro Sato ,  Yumi Fukuda ,  Aoi Okada ,  Naotoshi Matsuda ,  Toshiki Hikosaka

IPC分类号： H01J1/62

CPC分类号： C09K11/7734 ,  C09K11/0883 ,  H01L33/502 ,  H01L33/504 ,  H01L33/505 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 380 nm to 470 nm; a CASN first red phosphor that is disposed on the light emitting element; a sialon second red phosphor that is disposed on the light emitting element; and a sialon green phosphor that is disposed on the light emitting element.

公开(公告)号：US08461611B2

公开(公告)日：2013-06-11

申请号：US13208658

申请日：2011-08-12

申请人： Hiroshi Ono ,  Toshiki Hikosaka ,  Tomoko Morioka ,  Toshiyuki Oka ,  Shinya Nunoue

发明人： Hiroshi Ono ,  Toshiki Hikosaka ,  Tomoko Morioka ,  Toshiyuki Oka ,  Shinya Nunoue

IPC分类号： H01L33/22

CPC分类号： H01L33/22 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/06 ,  H01L33/20

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer and a light emitting part. The first semiconductor layer includes an n-type semiconductor layer. The second semiconductor layer includes a p-type semiconductor layer. The light emitting part is provided between the first semiconductor layer and the second semiconductor layer, and includes a plurality of barrier layers and a well layer provided between the plurality of barrier layers. The first semiconductor layer has a first irregularity and a second irregularity. The first irregularity is provided on a first major surface of the first semiconductor layer on an opposite side to the light emitting part. The second irregularity is provided on a bottom face and a top face of the first irregularity, and has a level difference smaller than a level difference between the bottom face and the top face.

摘要翻译： 根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层和发光部分。 第一半导体层包括n型半导体层。 第二半导体层包括p型半导体层。 发光部分设置在第一半导体层和第二半导体层之间，并且包括多个势垒层和设置在多个势垒层之间的阱层。 第一半导体层具有第一不规则性和第二不规则性。 第一不规则性设置在第一半导体层的与发光部相反的一侧的第一主表面上。 第二不规则性设置在第一凹凸的底面和顶面上，并且具有小于底面与顶面之间的水平差的水平差。

公开(公告)号：US08310145B2

公开(公告)日：2012-11-13

申请号：US13034120

申请日：2011-02-24

申请人： Iwao Mitsuishi ,  Shinya Nunoue ,  Takahiro Sato ,  Yumi Fukuda ,  Aoi Okada ,  Naotoshi Matsuda ,  Toshiki Hikosaka

发明人： Iwao Mitsuishi ,  Shinya Nunoue ,  Takahiro Sato ,  Yumi Fukuda ,  Aoi Okada ,  Naotoshi Matsuda ,  Toshiki Hikosaka

IPC分类号： H01J1/62 ,  H01L33/50

CPC分类号： C09K11/7734 ,  C09K11/0883 ,  H01L33/502 ,  H01L33/504 ,  H01L33/505 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emitting device according to one embodiment includes a light emitting element that emits light having a wavelength of 380 nm to 470 nm; a CASN first red phosphor that is disposed on the light emitting element; a sialon second red phosphor that is disposed on the light emitting element; and a sialon green phosphor that is disposed on the light emitting element.

摘要翻译： 根据一个实施例的发光器件包括发射波长为380nm至470nm的光的发光元件; 设置在发光元件上的CASN第一红色荧光体; 设置在发光元件上的赛隆第二红色磷光体; 以及设置在发光元件上的赛隆绿荧光体。

公开(公告)号：US08809085B2

公开(公告)日：2014-08-19

申请号：US13222238

申请日：2011-08-31

申请人： Taisuke Sato ,  Naoharu Sugiyama ,  Tomonari Shioda ,  Toshiki Hikosaka ,  Shinya Nunoue

发明人： Taisuke Sato ,  Naoharu Sugiyama ,  Tomonari Shioda ,  Toshiki Hikosaka ,  Shinya Nunoue

IPC分类号： H01L33/00 ,  H01L33/22

CPC分类号： H01L33/0079 ,  H01L33/22

摘要： According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor device. The method can include removing a growth substrate from a structure body by using a first treatment material. The structure body has the growth substrate, a buffer layer formed on the growth substrate, and the nitride semiconductor layer formed on the buffer layer. A support substrate is bonded to the nitride semiconductor layer. The method can include reducing thicknesses of the buffer layer and the nitride semiconductor layer by using a second treatment material different from the first treatment material after removing the growth substrate.

摘要翻译： 根据一个实施例，公开了一种用于制造氮化物半导体器件的方法。 该方法可以包括通过使用第一处理材料从结构体移除生长衬底。 结构体具有生长衬底，形成在生长衬底上的缓冲层和形成在缓冲层上的氮化物半导体层。 支撑基板结合到氮化物半导体层。 该方法可以包括在除去生长衬底之后使用与第一处理材料不同的第二处理材料来减小缓冲层和氮化物半导体层的厚度。

公开(公告)号：US08395169B2

公开(公告)日：2013-03-12

申请号：US12874839

申请日：2010-09-02

申请人： Toshiki Hikosaka ,  Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

发明人： Toshiki Hikosaka ,  Takahiro Sato ,  Iwao Mitsuishi ,  Shinya Nunoue

IPC分类号： H01L33/00

CPC分类号： H01L33/504 ,  H01L24/29 ,  H01L33/507 ,  H01L33/508 ,  H01L2224/14 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/00

摘要： According to one embodiment, a light emitting device includes a semiconductor light emitting element, a mounting member, a first wavelength conversion layer, and a first transparent layer. The semiconductor light emitting element emits a first light. The semiconductor light emitting element is placed on the mounting member. The first wavelength conversion layer is provided between the semiconductor light emitting element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The first transparent layer is provided between the semiconductor light emitting element and the first wavelength conversion layer in contact with the semiconductor light emitting element and the first wavelength conversion layer. The first transparent layer is transparent to the first light and the second light.

摘要翻译： 根据一个实施例，发光器件包括半导体发光元件，安装构件，第一波长转换层和第一透明层。 半导体发光元件发射第一光。 半导体发光元件被放置在安装构件上。 第一波长转换层设置在与安装构件接触的半导体发光元件和安装构件之间。 第一波长转换层吸收第一光并发射波长比第一光的波长长的第二光。 第一透明层设置在与半导体发光元件和第一波长转换层接触的半导体发光元件和第一波长转换层之间。 第一透明层对于第一光和第二光是透明的。