Abstract:
A specially shaped laser pulse energy profile characterized by different laser wavelengths at different times of the profile provides reduced, controlled jitter to enable semiconductor device micromachining that achieves high quality processing and a smaller possible spot size.
Abstract:
A laser beam switching system employs a laser coupled to a beam switching device that causes a laser beam to switch between first and second beam positioning heads such that while the first beam positioning head is directing the laser beam to process a workpiece target location, the second beam positioning head is moving to another target location and vice versa. A preferred beam switching device includes first and second AOMs positioned such that the laser beam passes through the AOMs without being deflected. When RF is applied to the first AOM, the laser beam is diffracted toward the first beam positioning head, and when RF is applied to the second AOM, the laser beam is diffracted toward the second beam positioning head.
Abstract:
Ultraviolet (UV) laser output (88) exploits the absorption characteristics of the materials from which an electrically conductive link (42), an underlying semiconductor substrate (50), and passivation layers (48 and 54) are made to effectively remove the link (42) without damaging the substrate (50). The UV laser output (88) forms smaller than conventional IR laser link-blowing spot diameters (58) because of its shorter wavelength, thus permitting the implementation of greater circuit density. A passivation layer positioned between the link and the substrate can be formulated to be sufficiently absorptive to UV laser energy and sufficiently thick to attenuate the laser energy to prevent it from damaging the substrate (50) in the laser beam spot area (43) in both the off-link and link-overlapped portions. The UV laser output (88) can be employed to controllably ablate a depthwise portion of the passivation layer (54) underlying the link (42) to facilitate complete removal of the link (42). In addition, direct ablation of the passivation layer (48) with the UV laser output (88) facilitates predictable and consistent link severing profiles. The absorption characteristics of the passivation material also reduces the risk of damage to neighboring links or other active structures.
Abstract:
A laser system (50) and processing method exploit a wavelength range (40) in which devices, including any semiconductor material-based devices (10) affected by conventional laser wavelengths and devices having light-sensitive or photo-electronic portions integrated into their circuits, can be effectively functionally trimmed without inducing performance drift or malfunctions in the processed devices. True measurement values of operational parameters of the devices can, therefore, be obtained without delay for device recovery, i.e., can be obtained substantially instantaneously with laser impingement. Accordingly, the present invention allows faster functional laser processing, eases geometric restrictions on circuit design, and facilitates production of denser and smaller devices.
Abstract:
A laser system and power control have a polarization state changer that produces in response to an incident beam with selected polarization state at a first wavelength .lambda..sub.1 a beam at .lambda..sub.1 with a desired polarization state. A frequency converter responds to the beam at .lambda..sub.1 with the desired polarization state to produce a frequency converted beam at a second, different wavelength .lambda..sub.2. When the polarization state changer and the frequency converter are located within a laser cavity, the laser system is operable in three different states and produces an output beam at .lambda..sub.1 or .lambda..sub.2, or no output beam, depending on the polarization state changer. In this intracavity configuration the polarization state changer is also operable as a Q-switch. When the polarization state changer and the frequency converter are located outside a laser cavity, the polarization state changer is operable in the whole range between its first and third states; the device thus produces an output beam at .lambda..sub.2, an output beam including components at .lambda..sub.1 and .lambda..sub.2, or an output beam having no component at .lambda..sub.2, again depending on the polarization state changer. In the extracavity configuration the power in the output at .lambda..sub.2 is continuously controllable between a maximum and zero.
Abstract:
A series of laser pulse bundles or bursts are used for micromachining target structures. Each burst includes short laser pulses with temporal pulse widths that are less than approximately 1 nanosecond. A laser micromachining method includes generating a burst of laser pulses and adjusting an envelope of the burst of laser pulses for processing target locations. The method includes adjusting the burst envelope by selectively adjusting one or more first laser pulses within the burst to a first amplitude based on processing characteristics of a first feature at a target location, and selectively adjusting one or more second laser pulses within the burst to a second amplitude based on processing characteristics of a second feature at the target location. The method further includes directing the amplitude adjusted burst of laser pulses to the target location.
Abstract:
Systems and methods provide laser pulse equalization at different pulse repetition frequencies (PRFs). After initially pumping a lasing medium from a first pumping level to a peak pumping level, a controller may cause a pump source to continue pumping the lasing medium according to a pulse equalization pumping curve. The equalization pumping curve may be determined based on testing laser pulse parameters at different PRFs to achieve an optimal equalization result of the pulse parameters. The optimization metric used to evaluate various equalization pumping curves may include a consistency of the pulse energy level, peak power level, and/or pulse width of the laser under different PRFs. The equalization pumping curve may be a descending curve from the peak pumping level to the first pumping level. The equalization pumping curve may be a linearly declining curve, a substantially exponentially declining curve, a parametrically declining curve, or any other curve type.
Abstract:
UV laser cutting throughput through silicon and like materials is improved by dividing a long cut path (112) into short segments (122), from about 10 μm to 1 mm. The laser output (32) is scanned within a first short segment (122) for a predetermined number of passes before being moved to and scanned within a second short segment (122) for a predetermined number of passes. The bite size, segment size (126), and segment overlap (136) can be manipulated to minimize the amount and type of trench backfill. Real-time monitoring is employed to reduce rescanning portions of the cut path 112 (112) where the cut is already completed. Polarization direction of the laser output (32) is also correlated with the cutting direction to further enhance throughput. This technique can be employed to cut a variety of materials with a variety of different lasers and wavelengths. A multi-step process can optimize the laser processes for each individual layer.
Abstract:
UV laser cutting throughput through silicon and like materials is improved by dividing a long cut path (112) into short segments (122), from about 10 μm to 1 mm. The laser output (32) is scanned within a first short segment (122) for a predetermined number of passes before being moved to and scanned within a second short segment (122) for a predetermined number of passes. The bite size, segment size (126), and segment overlap (136) can be manipulated to minimize the amount and type of trench backfill. Real-time monitoring is employed to reduce rescanning portions of the cut path 112 (112) where the cut is already completed. Polarization direction of the laser output (32) is also correlated with the cutting direction to further enhance throughput. This technique can be employed to cut a variety of materials with a variety of different lasers and wavelengths. A multi-step process can optimize the laser processes for each individual layer.
Abstract:
An improved method and apparatus for drilling vias in electronic substrates with laser pulses is presented which uses one or more tailored pulses to reduce debris remaining in the via while maintaining system throughput and avoiding damage to the substrate. A tailored pulse is a laser pulse that features a power spike having a peak power 10% higher than the average power of the pulse and lasting less than 50% of the duration of the pulse. Methods and apparatuses for creating tailored pulses by slicing longer duration pulses are shown.