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    Sputtering Apparatus, Thin-Film Forming Method, and Manufacturing Method for a Field Effect Transistor
    42.
    发明申请
    Sputtering Apparatus, Thin-Film Forming Method, and Manufacturing Method for a Field Effect Transistor 审中-公开
    溅射装置，薄膜​​形成方法和场效应晶体管的制造方法

    公开(公告)号：US20110201150A1

    公开(公告)日：2011-08-18

    申请号：US13123728

    申请日：2009-10-09

    申请人： Takaomi Kurata ,  Junya Kiyota ,  Makoto Arai ,  Yasuhiko Akamatsu ,  Satoru Ishibashi ,  Kazuya Saito

    发明人： Takaomi Kurata ,  Junya Kiyota ,  Makoto Arai ,  Yasuhiko Akamatsu ,  Satoru Ishibashi ,  Kazuya Saito

    IPC分类号： H01L21/36 ,  C23C14/34 ,  C23C14/08

    CPC分类号： C23C14/352 ,  C23C14/568 ,  H01J37/32752 ,  H01J37/3408

    摘要： [Object] To provide a sputtering apparatus, a thin-film forming method, and a manufacturing method for a field effect transistor, which are capable of reducing damage of a base layer.[Solving Means] The sputtering apparatus 100 includes a conveying mechanism, a first target Tc1, a second target (Tc2 to Tc5), and a sputtering means. The conveying mechanism conveys a supporting portion, which is arranged in an inside of a vacuum chamber and supports a substrate, linearly along a conveying surface parallel to the surface to be processed of the substrate. The first target Tc1 is opposed to the conveying surface with a first space therebetween. The second target (Tc2 to Tc5) is arranged on a downstream side in a conveying direction of the substrate with respect to the first target Tc1, and is opposed to the conveying surface with a second space smaller than the first space therebetween. The sputtering means sputters each target. According to this sputtering apparatus 100, the damage received by the base layer is small, and hence it is possible to form a thin-film having good film-forming properties.

    摘要翻译： 本发明提供能够降低基底层损伤的溅射装置，薄膜​​形成方法和场效晶体管的制造方法。 [解决方案]溅射装置100包括传送机构，第一目标Tc1，第二目标（Tc2至Tc5）和溅射装置。 传送机构传送支撑部分，其布置在真空室的内部并且沿着平行于待处理基板的表面的输送表面线性地支撑基板。 第一目标Tc1与其间具有第一空间的输送表面相对。 第二靶（Tc2〜Tc5）相对于第一靶Tc1布置在基板的输送方向的下游侧，并且与输送面相对，第二空间小于第一空间。 溅射意味着喷射每个目标。 根据该溅射装置100，由基底层接收的损伤小，因此可以形成具有良好成膜性能的薄膜。

    METHOD FOR PRODUCING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR
    43.
    发明申请
    METHOD FOR PRODUCING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR 有权
    生产薄膜晶体管和薄膜晶体管的方法

    公开(公告)号：US20110068338A1

    公开(公告)日：2011-03-24

    申请号：US12881652

    申请日：2010-09-14

    申请人： Satoru TAKASAWA ,  Satoru Ishibashi ,  Tadashi Masuda

    发明人： Satoru TAKASAWA ,  Satoru Ishibashi ,  Tadashi Masuda

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L23/53238 ,  H01L23/53233 ,  H01L27/124 ,  H01L29/458 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A metallic wiring film, which is not exfoliated even when exposed to plasma of hydrogen, is provided. A metallic wiring film is constituted by an adhesion layer in which Al is added to copper and a metallic low-resistance layer which is disposed on the adhesion layer and made of pure copper. When a copper alloy including Al and oxygen are included in the adhesion layer and a source electrode and a drain electrode are formed from it, copper does not precipitate at an interface between the adhesion layer and the silicon layer even when being exposed to the hydrogen plasma, which prevents the occurrence of exfoliation between the adhesion layer and the silicon layer. If the amount of Al increases, since widths of the adhesion layer and the metallic low-resistance layer largely differ after etching, the maximum addition amount for permitting the etching to be performed is the upper limit.

    摘要翻译： 提供即使暴露于氢等离子体时也不会剥离的金属布线膜。 金属布线膜由其中添加有Al的粘合层和设置在粘合层上并由纯铜制成的金属低电阻层构成。 当包含Al和氧的铜合金包括在粘合层中并且由其形成源电极和漏电极时，即使当暴露于氢等离子体时，铜也不会在粘附层和硅层之间的界面处析出 ，其防止粘附层和硅层之间的剥离的发生。 如果Al的量增加，由于粘合层和金属低电阻层的宽度在蚀刻之后大大不同，所以允许进行蚀刻的最大添加量是上限。

    Process for producing transparent conductive film comprising indium oxide
    44.
    发明授权
    Process for producing transparent conductive film comprising indium oxide 失效
    用于制造包含氧化铟的透明导电膜的方法

    公开(公告)号：US5116479A

    公开(公告)日：1992-05-26

    申请号：US524768

    申请日：1990-05-17

    申请人： Kyuzo Nakamura ,  Satoru Ishibashi ,  Yoshifumi Ota ,  Yasushi Higuchi

    发明人： Kyuzo Nakamura ,  Satoru Ishibashi ,  Yoshifumi Ota ,  Yasushi Higuchi

    IPC分类号： C08J7/06 ,  C23C14/08 ,  C23C14/34 ,  C23C14/35 ,  H01B5/14 ,  H01J37/34

    CPC分类号： H01J37/3458 ,  C23C14/086 ,  C23C14/35 ,  H01J37/3405

    摘要： A process and apparatus for producing an In-O or In-Sn-O based transparent conductive film by a sputtering process is provided. The sputtering voltage is kept constant at 350V or less by maintaining the intensity of the magnetic field on the surface of the target at 400 Oe or greater. The apparatus contains a vacuum chamber wherein the substrate and target are mounted in opposite to each other. An electromagnet, used for adjusting the intensity of the magnetic field is located on the rear surface of the target. Additionally provided is a controller for the electric current supplied to the electromagnet. The controller is also connected to a DC power supply for the electromagnet.

    摘要翻译： 提供了一种通过溅射工艺制造In-O或In-Sn-O系透明导电膜的方法和装置。 通过将目标表面上的磁场强度保持在400Oe以上，将溅射电压保持在350V以下。 该装置包含真空室，其中基板和靶相互相对地安装。 用于调整磁场强度的电磁铁位于目标的后表面。 另外提供了用于供应到电磁体的电流的控制器。 控制器也连接到电磁铁的直流电源。

    Wiring layer, semiconductor device and liquid crystal display device
    46.
    发明授权
    Wiring layer, semiconductor device and liquid crystal display device 有权
    接线层，半导体器件和液晶显示器件

    公开(公告)号：US08400594B2

    公开(公告)日：2013-03-19

    申请号：US13403145

    申请日：2012-02-23

    申请人： Satoru Takasawa ,  Masanori Shirai ,  Satoru Ishibashi

    发明人： Satoru Takasawa ,  Masanori Shirai ,  Satoru Ishibashi

    IPC分类号： G02F1/1335

    CPC分类号： H01L27/124 ,  C22C9/00 ,  C22C9/01 ,  H01L21/32051 ,  H01L23/53238 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided is an electrode layer and a wiring layer, which are free from peeling from a glass substrate. A wiring layer and a gate electrode layer are constituted by an adhering film which is a thin film made of Cu—Mg—Al formed on a surface of a glass substrate, and a copper film formed on the adhering film. When the adhering film includes Mg in a range of at least 0.5 atom % and at most 5 atom %, and aluminum in a range of at least 5 atom % and at most 15 atom %, assuming that the total number of atoms of copper, magnesium and aluminum is taken as 100 atom %, adhesion of the adhering film to the glass substrate becomes high, and the copper thin film is not peeled from the glass substrate. The wiring layer is electrically connected to a pixel electrode of a liquid crystal display device.

    摘要翻译： 设置有不从玻璃基板剥离的电极层和布线层。 布线层和栅极电极层由在玻璃基板的表面上形成的由Cu-Mg-Al构成的薄膜和形成在粘合膜上的铜膜的粘合膜构成。 当粘合膜包含至少0.5原子％至多5原子％范围内的Mg，至少5原子％至多15原子％的铝时，假设铜的原子总数， 镁和铝为100原子％，粘合膜对玻璃基板的粘附性变高，铜薄膜不会从玻璃基板剥离。 布线层与液晶显示装置的像素电极电连接。

    Methods for enhancing survival and/or proliferation of neural stem cells and neurite extension enhancers therefor pharmaceutical compostions containing neural stem cells assay methods and screening methods
    47.
    发明申请
    Methods for enhancing survival and/or proliferation of neural stem cells and neurite extension enhancers therefor pharmaceutical compostions containing neural stem cells assay methods and screening methods 有权
    用于增强神经干细胞和神经突延伸增强剂的存活和/或增殖的方法，用于含有神经干细胞的药物组合物测定方法和筛选方法

    公开(公告)号：US20070098701A1

    公开(公告)日：2007-05-03

    申请号：US10571277

    申请日：2004-09-08

    申请人： Hideyuki Okano ,  James Okano ,  Masanori Sakaguchi ,  Hidehiro Mizusawa ,  Satoru Ishibashi

    发明人： Hideyuki Okano ,  James Okano ,  Masanori Sakaguchi ,  Hidehiro Mizusawa ,  Satoru Ishibashi

    IPC分类号： A61K48/00 ,  C12N5/08

    CPC分类号： C12N5/0623 ,  A61K35/30 ,  C12N2501/59

    摘要： Problems to be Solved Methods for enhancing survival and/or proliferation of neural stem cells and pharmaceutical compositions containing neural stem cells prepared by such methods, together with methods for assaying factors enhancing survival and/or proliferation of neural stem cells and methods for screening for such factors. Means for Solving the Problem Either Galectin-1 is overexpressed in neural stem cells or neural stem cells are cultured in a liquid medium containing Galectin-1. Pharmaceutical compositions containing Galectin-1-overexpressing neural stem cells and pharmaceutical composition containing Galectin-1, prepared by the aforementioned methods, improve higher cerebral functions damaged by cerebral ischemia. Further, by seeding neural stem cells at clonal concentrations and determining whether the seeded neural stem cells are capable of proliferating in an assay medium to be assayed, whether the factor enhances survival and/or proliferation of neural stem cells is assayed and a factor enhancing survival and/or proliferation of neural stem cells are identified using this assay method.

    摘要翻译： 要解决的问题增强神经干细胞的存活和/或增殖的方法和通过这些方法制备的含有神经干细胞的药物组合物以及用于测定增强神经干细胞的存活和/或增殖的因子的方法以及用于筛选这些方法的方法 因素 解决问题的方法将Galectin-1在神经干细胞或神经干细胞中过表达，在含有Galectin-1的液体培养基中培养。 含有Galectin-1-过表达神经干细胞的药物组合物和含有通过上述方法制备的Galectin-1的药物组合物改善了由脑缺血损伤的较高脑功能。 此外，通过以克隆浓度接种神经干细胞并确定接种的神经干细胞是否能够在要测定的测定培养基中增殖，测定该因子是否增强神经干细胞的存活和/或增殖，并且提高生存的因子 和/或使用该测定方法鉴定神经干细胞的增殖。

    Method for producing a thin film transistor, and a thin film transistor
    48.
    发明申请
    Method for producing a thin film transistor, and a thin film transistor 有权
    薄膜晶体管的制造方法以及薄膜晶体管

    公开(公告)号：US20110233550A1

    公开(公告)日：2011-09-29

    申请号：US13064858

    申请日：2011-04-21

    申请人： Satoru Takasawa ,  Satoru Ishibashi ,  Tadashi Masuda

    发明人： Satoru Takasawa ,  Satoru Ishibashi ,  Tadashi Masuda

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/66765 ,  C23C14/0036 ,  C23C14/185 ,  C23C14/5826 ,  H01L21/2855 ,  H01L23/53233 ,  H01L27/124 ,  H01L29/458 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided is a metallic wiring film which is not peeled away even when exposed to a hydrogen plasma. A metallic wiring film is constituted by an adhesion layer containing copper, Ca, and oxygen and a low-resistance metal layer (a layer of a copper alloy or pure copper) having a lower resistance than the adhesion layer. When the adhesion layer is composed of a copper alloy, which contains Ca and oxygen, and a source electrode film and a drain electrode film adhering to an ohmic contact layer are constituted by the adhesion layer, even if the adhesion layer is exposed to the hydrogen plasma, a Cu-containing oxide formed at an interface between the adhesion layer and the ohmic contact layer is not reduced, so that no peeling occurs between the adhesion layer and a silicon layer.

    摘要翻译： 提供即使暴露于氢等离子体也不会剥离的金属配线膜。 金属布线膜由包含铜，Ca和氧的粘合层和具有比粘合层低的电阻的低电阻金属层（铜合金或纯铜的一层）构成。 当粘合层由含有Ca和氧的铜合金构成，并且附着在欧姆接触层上的源电极膜和漏电极膜由粘合层构成时，即使粘附层暴露于氢 等离子体，在粘合层和欧姆接触层之间的界面处形成的含Cu氧化物不会降低，使得粘附层和硅层之间不会发生剥离。

    Sputtering Apparatus, Thin-Film Forming Method, and Manufacturing Method for a Field Effect Transistor
    49.
    发明申请
    Sputtering Apparatus, Thin-Film Forming Method, and Manufacturing Method for a Field Effect Transistor 审中-公开
    溅射装置，薄膜​​形成方法和场效应晶体管的制造方法

    公开(公告)号：US20110195562A1

    公开(公告)日：2011-08-11

    申请号：US13123727

    申请日：2009-10-14

    申请人： Takaomi Kurata ,  Junya Kiyota ,  Makoto Arai ,  Yasuhiko Akamatsu ,  Satoru Ishibashi ,  Kazuya Saito

    发明人： Takaomi Kurata ,  Junya Kiyota ,  Makoto Arai ,  Yasuhiko Akamatsu ,  Satoru Ishibashi ,  Kazuya Saito

    IPC分类号： H01L21/203 ,  C23C14/34

    CPC分类号： C23C14/083 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3455

    摘要： [Object] To provide a sputtering apparatus, a thin-film forming method, and a manufacturing method for a field effect transistor, which are capable of reducing damage of a base layer.[Solving Means] A sputtering apparatus according to an embodiment of the present invention is a sputtering apparatus for forming a thin-film on a surface to be processed of a substrate 10, and includes a vacuum chamber 61, a supporting portion 93, a target 80, and a magnet 83. The magnet 83 generates plasma forming a region to be sputtered 80a, and moves the region to be sputtered 80abetween a first position in which the region to be sputtered 80a is not opposed to the surface to be processed and a second position in which the region to be sputtered is opposed to the surface to be processed. With this, it is possible to weaken incident energy of sputtered particles incident on the surface to be processed of the substrate 10 from the region to be sputtered 80a, and to protect the base layer.

    摘要翻译： 本发明提供能够降低基底层损伤的溅射装置，薄膜​​形成方法和场效晶体管的制造方法。 本发明的实施方式的溅射装置是在基板10的被处理面上形成薄膜的溅射装置，具有真空室61，支撑部93，靶 80和磁体83.磁体83产生等离子体，形成要溅射的区域80a，并且在要溅射的区域80a与待处理的表面不相对的第一位置之间移动要溅射的区域80， 第二位置，其中要溅射的区域与待处理的表面相对。 由此，可以从入射到被溅射区域80a上的入射到待处理基板10的表面上的溅射粒子的入射能量减弱，从而保护基底层。