公开(公告)号：USRE36836E

公开(公告)日：2000-08-29

申请号：US510422

申请日：1995-08-02

申请人： Yutaka Hayashi ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Hiroaki Takasu

发明人： Yutaka Hayashi ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Hiroaki Takasu

IPC分类号： G02F1/136 ,  G02F1/1335 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L21/86 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L29/04 ,  H01L27/01

CPC分类号： G02F1/13454 ,  G02F1/136209 ,  G02F1/1368 ,  H01L21/84 ,  H01L21/86 ,  H01L27/1203 ,  H01L27/1214 ,  H01L29/66772 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78654 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  Y10S148/012 ,  Y10S148/15 ,  Y10S438/977

摘要： The invention provides a semi-conductor light valve device and a process for fabricating the same. The device comprises a composite substrate having a supporte substrate, a light-shielding thin film formed on said supporte substrate and semiconductive thin film disposed on the light-shielding thin film with interposing an insulating thin film. A switching element made of a transistor and a transparent electrode for driving light valve are formed on the semiconductive thin film, and the switching element and the transparent electrode are connected electrically with each other. The transistor includes a channel region in the semiconductive thin film and a main gate electrode for controlling the conduction in the channel region, and the light-shielding thin film layer is so formed as to cover the channel region on the side opposite to said channel region, so as to prevent effectively a back channel and shut off the incident light.

摘要翻译： 本发明提供一种半导体光阀装置及其制造方法。 该装置包括具有支撑衬底的复合衬底，在所述支撑衬底上形成的遮光薄膜和设置在遮光薄膜上并具有绝缘薄膜的半导体薄膜。 在半导体薄膜上形成由晶体管构成的开关元件和用于驱动光阀的透明电极，并且开关元件和透明电极彼此电连接。 晶体管包括半导体薄膜中的沟道区域和用于控制沟道区域中的导通的主栅电极，并且遮光薄膜层形成为覆盖与所述沟道区域相对的一侧上的沟道区域 ，以便有效地防止背部通道并且切断入射光。

公开(公告)号：US6054734A

公开(公告)日：2000-04-25

申请号：US964726

申请日：1997-11-05

申请人： Hiroshi Aozasa ,  Yutaka Hayashi

发明人： Hiroshi Aozasa ,  Yutaka Hayashi

IPC分类号： H01L21/8246 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/76 ,  H01L29/788

CPC分类号： H01L27/11526 ,  H01L27/112 ,  H01L27/115 ,  H01L27/11543 ,  H01L29/42336

摘要： A non-volatile memory device in which gate electrodes are formed on an upper surface and a lower surface of the channel via insulating layers, respectively, one of them is used as a read electrode and the other is used as a write electrode, whereby, at a read operation, the reading is carried out with a reduced influence upon stored charges stored at the time of writing. Particularly, it has a structure in which a source and drain region of the non-volatile semiconductor memory device is formed in the semiconductor layer formed on the insulating layer and, at the same time, one of the read electrode and write electrode is buried in the insulating layer.

摘要翻译： 一种非易失性存储器件，其中分别通过绝缘层在沟道的上表面和下表面上形成栅电极，其中一个用作读电极，另一个用作写电极， 在读取操作时，对写入时存储的存储的电荷的影响减小进行读取。 特别是具有在形成于绝缘层上的半导体层中形成非易失性半导体存储元件的源极和漏极区域的结构，同时将读取电极和写入电极中的一个埋入 绝缘层。

公开(公告)号：US6012697A

公开(公告)日：2000-01-11

申请号：US826381

申请日：1997-04-09

申请人： Toshiya Ohtomo ,  Yutaka Hayashi

发明人： Toshiya Ohtomo ,  Yutaka Hayashi

IPC分类号： G02B7/182 ,  A47G1/24

CPC分类号： G02B7/1822 ,  Y10S148/102

摘要： A movable mirror supporting mechanism for supporting a movable mirror forming a part of an interferometric measurement system and having a rectangular cross-section onto an object, with a reflecting surface of said movable mirror being arranged normal to a measuring direction. The movable mirror supporting mechanism includes at least two fixtures for securing the movable mirror from above onto respective movable mirror supporting portions provided on the object. Positions on the movable mirror at which the movable mirror is secured onto the measuring object by the fixtures are defined to be out of that area of the reflecting surface of the movable mirror which is utilized for interferometric measurement.

摘要翻译： 一种可移动镜支撑机构，用于支撑形成干涉测量系统的一部分并且具有矩形截面的物体的可移动镜，其中所述可移动镜的反射表面垂直于测量方向布置。 可移动镜支撑机构包括用于将可动镜从上方固定到设置在物体上的相应可移动镜支撑部分上的至少两个固定装置。 将可动镜由夹具固定在测量对象上的可移动镜上的位置被定义为在用于干涉测量的可移动镜的反射表面的区域之外。

公开(公告)号：US5982461A

公开(公告)日：1999-11-09

申请号：US834288

申请日：1992-02-14

申请人： Yutaka Hayashi ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Hiroaki Takasu

发明人： Yutaka Hayashi ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Hiroaki Takasu

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09G3/20 ,  G09G3/36 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC分类号： G02F1/13454 ,  G02F1/1362 ,  G02F2202/105

摘要： A light valve device has a drive substrate integrated with a drive electrode. A transistor is connected to the drive electrode and a driving circuit energizes the drive electrode through the transistor. An opposed substrate is provided opposed to the drive electrode, and an electrooptical material layer is disposed between the drive substrate and the opposed substrate. The drive substrate has a structure comprising a substrate layer and a semiconductor single crystal thin film layer. The semiconductor single crystal thin film layer is made by thinning a semiconductor single crystal wafer which has been bonded to the substrate layer. The light valve device has a small size and high pixel density and can be formed using miniaturization technology. The light valve can be used for a small size, high resolution video projector and a color matrix display device.

摘要翻译： PCT No.PCT / JP91 / 00580 Sec。 371日期：1992年2月14日 102（e）日期1992年2月14日PCT 1991年4月26日PCT PCT。 WO91 / 17471 PCT出版物 日期1991年11月14日光阀装置具有与驱动电极集成的驱动基板。 晶体管连接到驱动电极，驱动电路通过晶体管对驱动电极通电。 相对的基板与驱动电极相对设置，电光材料层设置在驱动基板和相对的基板之间。 驱动基板具有包括基板层和半导体单晶薄膜层的结构。 半导体单晶薄膜层通过使已结合到基底层的半导体单晶晶片变薄来制造。 光阀装置具有小尺寸和高像素密度，并且可以使用小型化技术形成。 光阀可用于小尺寸，高分辨率的视频投影机和彩色矩阵显示设备。

公开(公告)号：US5770899A

公开(公告)日：1998-06-23

申请号：US934815

申请日：1997-09-22

申请人： Yutaka Hayashi

发明人： Yutaka Hayashi

IPC分类号： H01L21/027 ,  G03F7/20 ,  H02K9/00 ,  H02K9/19 ,  H02K11/00 ,  H02K41/02 ,  H02K41/00 ,  H02K41/035

CPC分类号： G03F7/70716 ,  G03F7/70866 ,  H02K41/031 ,  H02K9/19 ,  H02K11/00 ,  H02K9/005

摘要： A linear motor has two relatively members moveable a coil mounted to one of the two members, a magnet mounted to the other of the two members, a circulating pump for circulating a cooling medium via a circulating pipe in an outer tube surrounding the coil, a pressure detecting device for detecting the pressure of the cooling medium, and a control system for controlling the operation of the circulating pump based on the detected pressure value from the pressure detecting device.

摘要翻译： 线性电动机具有两个相对的构件，可移动安装到两个构件中的一个的线圈，安装到两个构件中的另一个的磁体;循环泵，用于通过围绕线圈的外管中的循环管循环冷却介质， 用于检测冷却介质的压力的压力检测装置，以及根据来自压力检测装置的检测压力值来控制循环泵的运转的控制系统。

公开(公告)号：US5698874A

公开(公告)日：1997-12-16

申请号：US742445

申请日：1996-11-01

申请人： Yutaka Hayashi

发明人： Yutaka Hayashi

IPC分类号： H01L27/146 ,  H01L27/148 ,  H01L31/10 ,  H01L31/06

CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H01L27/14831

摘要： A photoelectric cell of the present invention comprises a first conduction type first semiconductor region; a second conduction type second semiconductor region formed in the surface of the first semiconductor region so as to form a pn junction together with the first semiconductor region; a first conductive region formed in the surface of the first semiconductor region so as to be separated from the second semiconductor region and to form a first rectifier junction together with the first semiconductor region; a second conductive region formed in the surface of the first semiconductor region so as to be separated from the first conductive region and to be electrically connected to the second semiconductor region to form a second rectifier junction together with the first semiconductor region; a third conductive region formed in the surface of the second semiconductor region so as to form a third rectifier junction together with the second semiconductor region; a first insulated gate formed on a first channel forming region in the surface of the first semiconductor region defined between the first conductive region and the second conductive region on and a second insulated gate formed on a second channel forming region in the surface of the second semiconductor region defined between the first semiconductor region and the third conductive region.

摘要翻译： 本发明的光电池包括第一导电型第一半导体区域; 第二导电型第二半导体区域，形成在第一半导体区域的表面中，以便与第一半导体区域一起形成pn结; 形成在所述第一半导体区域的表面中以与所述第二半导体区域分离并与所述第一半导体区域一起形成第一整流器结的第一导电区域; 第二导电区域，形成在第一半导体区域的表面中，以与第一导电区域分离，并与第二半导体区域电连接，以与第一半导体区域一起形成第二整流器结; 形成在所述第二半导体区域的表面中的第三导电区域，以与所述第二半导体区域一起形成第三整流器结; 形成在第一导电区域和第二导电区域之间的第一半导体区域的表面上的第一沟道形成区域上的第一绝缘栅极和形成在第二半导体的表面中的第二沟道形成区域上的第二绝缘栅极 区域限定在第一半导体区域和第三导电区域之间。

公开(公告)号：US5578853A

公开(公告)日：1996-11-26

申请号：US541172

申请日：1995-10-11

申请人： Yutaka Hayashi ,  Takeshi Matsushita

发明人： Yutaka Hayashi ,  Takeshi Matsushita

IPC分类号： G11C11/405 ,  G11C11/404 ,  H01L21/8238 ,  H01L21/8242 ,  H01L27/092 ,  H01L27/108 ,  H01L29/786 ,  H01L27/01 ,  H01L27/12 ,  H01L29/76 ,  H01L31/0392

CPC分类号： H01L27/108 ,  G11C11/404

摘要： A semiconductor memory cell, or a semiconductor memory cell for ASICs, of the structure is provided which ensures stable transistor operation, which does not require a large-capacitance capacitor as required in conventional DRAMs, which ensures reliable reading and writing of information, that permits short-channel design, and that allows the cell area to be reduced. The semiconductor memory cell includes: an information storage transistor TR.sub.1 comprising a semiconductor channel layer Ch.sub.1, first and second conductive gates G.sub.1, G.sub.2, and first and second conductive layers L.sub.1, L.sub.2 ; and a switching transistor TR.sub.2 comprising a semiconductor channel forming region Ch.sub.2, a third conductive gate G.sub.3, and third and fourth conductive layers L.sub.3, L.sub.4, wherein the fourth conductive layer L.sub.4 is connected to the second conductive gate G.sub.2, the first conductive gate G.sub.1 and the third conductive gate G.sub.3 are connected to a first memory-cell-selection line, the first conductive layer L.sub.1 and the third conductive layer L.sub.3 are connected to a second memory-cell-selection line, the second conductive layer L.sub.2 is connected to a fixed potential, and the semiconductor channel forming region Ch.sub.2 is connected to a read/write selection line.

摘要翻译： 提供了一种结构的半导体存储单元或用于ASIC的半导体存储单元，其确保稳定的晶体管操作，其不需要常规DRAM中所需的大容量电容器，这确保可靠地读取和写入信息，这允许 短通道设计，并且可以减小单元格区域。 半导体存储单元包括：包括半导体沟道层Ch1，第一和第二导电栅极G1，G2以及第一和第二导电层L1，L2的信息存储晶体管TR1; 以及包括半导体沟道形成区域Ch2，第三导电栅极G3以及第三和第四导电层L3，L4的开关晶体管TR2，其中第四导电层L4连接到第二导电栅极G2，第一导电栅极G1和 第三导电栅极G3连接到第一存储单元选择线，第一导电层L1和第三导电层L3连接到第二存储单元选择线，第二导电层L2连接到固定 电位，并且半导体沟道形成区域Ch2连接到读/写选择线。

公开(公告)号：US5558493A

公开(公告)日：1996-09-24

申请号：US477653

申请日：1995-06-07

申请人： Yutaka Hayashi ,  Mitsuo Miyamoto ,  Michihito Watarai ,  Takayuki Atarashi ,  Tetsuya Tanaka ,  Toshio Hatada ,  Yoshihiro Takada ,  Takahiro Daikoku

发明人： Yutaka Hayashi ,  Mitsuo Miyamoto ,  Michihito Watarai ,  Takayuki Atarashi ,  Tetsuya Tanaka ,  Toshio Hatada ,  Yoshihiro Takada ,  Takahiro Daikoku

IPC分类号： F25D1/00 ,  C04B28/18 ,  F04D29/42 ,  H05K7/20 ,  F04D29/66

CPC分类号： F04D29/4213

摘要： A forced air cooling apparatus having a blower for blowing air taken in from an intake surface or inlet of the blower to be blown against an electronic device in an installation wherein the blower is mounted for operation on a casing or a rack, and in which the apparatus has a flow regulating plate vertically intersecting the intake surface that is installed immediately before the intake surface. With this construction, eddy air current flow in the vicinity of the intake surface is prevented and the cooling ability obtained from the blower is optimized to thereby attain the effect that the electronic devices can be efficiently cooled without requiring the same separation distance between an intake surface of the blower and a wall surface of the frame or casing in which the blower is installed, as compared with a conventional installation of the same equipment in the same casing without the flow regulating plate.

摘要翻译： 一种强制用空气冷却装置，其特征在于，具有鼓风机，所述鼓风机用于将鼓风机从壳体或机架上进行操作的设备中，从鼓风机的进气表面或进气口吸入的空气吹向电子设备，其中， 装置具有垂直于入口表面垂直相交的流动调节板，其紧靠在进气表面之前安装。 通过这种结构，可以防止在进气表面附近的涡流流动，从鼓风机获得的冷却能力最优化，从而达到能够有效地冷却电子设备的效果，而不需要在进气表面 的鼓风机和安装有鼓风机的框架或壳体的壁面相比，与同一设备的常规安装相比，在没有流量调节板的情况下。

公开(公告)号：US5536934A

公开(公告)日：1996-07-16

申请号：US357273

申请日：1994-12-13

申请人： Yutaka Hayashi

发明人： Yutaka Hayashi

IPC分类号： G01R31/26 ,  G01J1/42 ,  G01R19/165 ,  H01L31/08 ,  H01S5/042 ,  H01S5/068 ,  H01J40/14

CPC分类号： H01S5/06825

摘要： A light intensity deterioration detecting circuit which includes a photodiode which receives light from a laser diode and having a cathode connected to a power supply and an anode connected to a first end of a resistor. A reference current source is connected between the power supply and a first input of a comparator which has the first input connected to a first end of a resistor and a second input connected to the first end of the resistor, and which compares a comparison voltage provided at the first end of the resistor and a comparison voltage provided at the second end of the resistor to output an output voltage on the basis of the comparison result. Errors of a resistance ratio are reduced to a negligible level if relatively large errors are produced in individual resistances, thus correctly detecting deterioration of a current to light output characteristic of the laser diode without an offset control.

摘要翻译： 一种光强度劣化检测电路，其包括光电二极管，其接收来自激光二极管的光，并且具有连接到电源的阴极和连接到电阻器的第一端的阳极。 参考电流源连接在电源和比较器的第一输入端之间，比较器的第一输入端连接到电阻器的第一端，第二输入端连接到电阻器的第一端，并且比较提供的比较电压 并且在电阻器的第二端提供比较电压，以根据比较结果输出输出电压。 如果在单个电阻中产生相对较大的误差，则电阻比的误差降低到可忽略的水平，从而正确地检测在没有偏移控制的情况下电流对激光二极管的光输出特性的劣化。

公开(公告)号：US5486709A

公开(公告)日：1996-01-23

申请号：US38623

申请日：1993-03-26

申请人： Yutaka Hayashi ,  Masaaki Sato ,  Yoshiki Maeyashiki

发明人： Yutaka Hayashi ,  Masaaki Sato ,  Yoshiki Maeyashiki

IPC分类号： H01L29/74 ,  H01L27/02 ,  H01L29/747 ,  H01L29/861 ,  H01L29/87

CPC分类号： H01L27/0248 ,  H01L29/87

摘要： In a breakover type surge protection device utilizing punch-through that comprises a second semiconductor region forming a first pn junction with a first semiconductor region, a third semiconductor region forming a second pn junction with the second semiconductor region and a fourth semiconductor region forming a third pn junction with the first semiconductor region at a place apart from the second semiconductor region, the second semiconductor region is constituted of a punch-through suppression region portion disposed to cover the corners of the third semiconductor region and a punch-through generation region portion disposed at a place where its thickness can be made uniform. Fabricating surge protection devices according to this configuration reduces variation among their breakover currents and hold currents and increases their surge absorption capacity.

摘要翻译： 在利用穿通的断路式浪涌保护装置中，包括形成与第一半导体区域的第一pn结的第二半导体区域，与第二半导体区域形成第二pn结的第三半导体区域和形成第三半导体区域的第三半导体区域 在与第二半导体区域隔开的位置处与第一半导体区域的pn结，第二半导体区域由设置成覆盖第三半导体区域的角部的穿通抑制区域部分和设置在穿孔产生区域部分 在其厚度可以均匀的地方。 根据这种配置制造浪涌保护装置可以减少其断流和保持电流之间的变化，并增加其浪涌吸收能力。