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公开(公告)号：US20230057937A1
公开(公告)日：2023-02-23
申请号：US17981265
申请日：2022-11-04
IPC分类号： H01J37/32 , H01L21/683 , H01L21/687 , C23C16/458
摘要： A plasma processing apparatus includes a stage for supporting a target object in a chamber defined by a chamber body. The stage includes a lower electrode, an electrostatic chuck provided on the lower electrode, heaters provided in the electrostatic chuck, and terminals electrically connected to the heaters. A conductor pipe electrically connects a high frequency power supply and the lower electrode and extends from the lower electrode to the outside of the chamber body. Power supply lines supply power from a heater controller to the heaters. Filters partially forming the power supply lines prevent the inflow of high frequency power from the heaters to the heater controller. The power supply lines include wirings which respectively connect the terminals and the filters and extend to the outside of the chamber body through an inner bore of the conductor pipe.
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公开(公告)号：US20230055853A1
公开(公告)日：2023-02-23
申请号：US17820299
申请日：2022-08-17
发明人： Takashi Terada , Yuji Mimura , Hiroshi Maeda , Kazutaka Noda , Masaru Honda , Ryoichi Sakamoto , Yutaka Yamasaki , Tatsuya Kitayama , Akira Fukutomi
IPC分类号： B32B43/00
摘要： A separating method includes holding a combined substrate and separating a first substrate. In the holding of the combined substrate, the combined substrate in which the first substrate and a second substrate are bonded is held. In the separating of the first substrate, the first substrate is separated from the combined substrate, starting from a side surface of the combined substrate. The separating of the first substrate includes brining a fluid containing water into contact with the side surface.
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43.发明申请公开(公告)号：US20230055839A1
公开(公告)日：2023-02-23
申请号：US17889114
申请日：2022-08-16
发明人： Ivan MALEEV , Shin-Yee LU , Dimitri KLYACHKO , Ching Ling MENG , Xinkang TIAN
IPC分类号： H01L21/68 , H01J37/32 , H01L21/677
摘要： A method of manufacturing semiconductor devices includes repeatedly performing a transfer operation which transfers each of a plurality of semiconductor wafers between a substrate handling module and a processing chamber through a wafer access port, the processing chamber including at least one consumable component. Using the processing chamber, a semiconductor manufacturing process is performed on each of the plurality of semiconductor wafers; and detecting an optical signal from the at least one consumable component during a time when the processing chamber is not performing the semiconductor manufacturing process on the wafers.
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公开(公告)号：US20230053083A1
公开(公告)日：2023-02-16
申请号：US17882834
申请日：2022-08-08
IPC分类号： H01J37/32 , C23C16/34 , C23C16/509 , C23C16/44
摘要： A plasma processing apparatus includes: a reaction tube provided in a processing container; a boat that holds a substrate, and is carried into and out from the reaction tube in order to form a film on the substrate; a plasma generation tube that communicates with the reaction tube, and generates plasma from a gas; a gas supply that supplies the gas to the plasma generation tube; electrode installation columns provided to sandwich the plasma generation tube therebetween, and including electrodes, respectively; an RF power supply that is connected to the electrodes, and supplies a radio frequency to the electrodes; a coil provided to be spaced apart from the electrodes in the electrode installation columns; and a DC power supply that is connected to the coil, and supplies a direct current to the coil.
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公开(公告)号：US20230052800A1
公开(公告)日：2023-02-16
申请号：US17519292
申请日：2021-11-04
发明人： Daniel Fulford , Jodi Grzeskowiak , H. Jim Fulford , Sean Smith , Partha Mukhopadhyay , Michael Murphy , Anton deVilliers
IPC分类号： G03F7/20 , H01L21/027 , H01L21/033
摘要： A method of forming sub-resolution features that includes: exposing a photoresist layer formed over a substrate to a first ultraviolet light (UV) radiation having a first wavelength of 365 nm or longer through a mask configured to form features at a first critical dimension, the photoresist layer including first portions exposed to the first UV radiation and second portions unexposed to the first UV radiation after exposing with the first UV radiation; exposing the first portions and the second portions to a second UV radiation; and developing the photoresist layer after exposing the photoresist layer to the second UV radiation to form the sub-resolution features having a second critical dimension less than the first critical dimension.
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公开(公告)号：US20230051865A1
公开(公告)日：2023-02-16
申请号：US17975619
申请日：2022-10-28
发明人： Takuya SEINO , Yasushi KODASHIMA , Naoki WATANABE , Hiroyuki TOSHIMA , Masato SHINADA , Tetsuya MIYASHITA
摘要： The PVD apparatus includes a chamber, a plurality of stages, a first target holder, a power supply mechanism, and a shield. The plurality of stages are provided inside the chamber, and each of the plurality of stages is configured to place at least one substrate on an upper surface thereof. The first target holder is configured to hold at least one target provided for one stage, the target being exposed to a space inside the chamber. The power supply mechanism supplies power to the target via the first target holder. The shield is provided inside the chamber and a part of the shield is disposed between a first stage and a second stage in the plurality of stages, and between a first processing space on the first stage and a second processing space on the second stage.
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公开(公告)号：US11582854B2
公开(公告)日：2023-02-14
申请号：US16688667
申请日：2019-11-19
发明人： Takehiro Ueda
IPC分类号： H05F3/06 , H01L21/683 , H01L21/67 , H01J37/32 , H01L21/687
摘要： A mounting table is provided. The mounting table includes an electrostatic chuck configured to mount thereon a target object and attract and hold the target object using an electrostatic force, and a gas supply line configured to supply a gas to a gap between the target object mounted on the electrostatic chuck and the electrostatic chuck via the electrostatic chuck. The mounting table further includes at least one irradiation unit configured to irradiate light having a predetermined wavelength to the gas flowing through the gas supply line or to the gas supplied to the gap between the target object and the electrostatic chuck to ionize the gas.
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公开(公告)号：US11581242B2
公开(公告)日：2023-02-14
申请号：US17344259
申请日：2021-06-10
发明人： Daniel Chanemougame , Lars Liebmann , Jeffrey Smith , Paul Gutwin
IPC分类号： H01L23/473 , H01L25/00 , H01L25/065 , H01L23/00 , H01L25/18
摘要： A microfabrication device is provided. The microfabrication device includes a combined substrate including a first substrate connected to a second substrate, the first substrate having first devices and the second substrate having second devices; fluidic passages formed at a connection point between the first substrate and the second substrate, the connection point including a wiring structure that electrically connects first devices to second devices and physically connects the first substrate to the second substrate; dielectric fluid added to the fluidic passages; and a circulating mechanism configured to circulate the dielectric fluid through the fluidic passages to transfer heat.
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公开(公告)号：US11581201B2
公开(公告)日：2023-02-14
申请号：US16820898
申请日：2020-03-17
发明人： Kazuteru Obara , Tatsuya Yamaguchi , Yasuaki Kikuchi , Ryuji Kusajima , Shinya Nasukawa , Kazuyuki Kikuchi
IPC分类号： H01L21/67 , C23C16/455 , H01L21/324 , H01L21/677 , C23C16/34
摘要： A heat treatment apparatus includes: a processing container configured to accommodate and process a plurality of substrates in multiple tiers under a reduced-pressure environment; a first heater configured to heat the plurality of substrates accommodated in the processing container; a plurality of gas supply pipes configured to supply a gas to positions having different heights in the processing container; and a second heater provided on a gas supply pipe that supplies a gas to a lowermost position among the plurality of gas supply pipes, and configured to heat the gas in the gas supply pipe.
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公开(公告)号：US11581192B2
公开(公告)日：2023-02-14
申请号：US17211393
申请日：2021-03-24
发明人： Takehiko Orii , Nobuhiro Takahashi
IPC分类号： H01L21/311 , H01L21/02 , H01L21/306 , H01L21/67 , H01L21/3213
摘要： An etching method is provided. In the etching method, a protective film-forming gas including an amine gas is supplied to a substrate having a surface on which a first film and a second film are formed, the first film and the second film having respective properties of being etched by an etching gas, and a protective film is formed to cover the first film such that the first film is selectively protected between the first film and the second film when the etching gas is supplied. Further, the second film is selectively etched by supplying the etching gas to the substrate after the protective film is formed.
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