公开(公告)号：US08264224B2

公开(公告)日：2012-09-11

申请号：US12606852

申请日：2009-10-27

Applicant: Doyeol Ahn

Inventor： Doyeol Ahn

IPC: G01V3/00

CPC classification number: G01R33/3415 ,  G01R33/3806

Abstract: Magnetic field detection techniques and devices are provided. In one embodiment, a device configured to detect a magnetic field includes a first set of nano-magnets and a second set of nano-magnets. The first set of nano-magnets is operable to induce a RF magnetic field, and the second set of nano-magnets is operable to induce a first electrical signal in response to magnetic resonance signals caused by the RF magnetic field.

Abstract translation: 提供磁场检测技术和设备。 在一个实施例中，被配置为检测磁场的装置包括第一组纳米磁体和第二组纳米磁体。 第一组纳米磁体可操作以感应RF磁场，并且第二组纳米磁体可操作以响应于由RF磁场引起的磁共振信号而感应第一电信号。

公开(公告)号：US08227793B2

公开(公告)日：2012-07-24

申请号：US12498204

申请日：2009-07-06

Applicant: Doyeol Ahn

Inventor： Doyeol Ahn

IPC: H01L29/06 ,  H01L31/00

CPC classification number: H01L31/0232 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/035227 ,  H01L31/1013 ,  H01L31/113

Abstract: Apparatuses capable of and techniques for detecting the visible light spectrum are provided.

Abstract translation: 提供了能够检测可见光谱的装置和技术。

公开(公告)号：US20120185607A1

公开(公告)日：2012-07-19

申请号：US13352932

申请日：2012-01-18

Applicant: Sung-Ryeul Rhyu ,  Yong-Han Kim ,  Seo-Young Hwang

Inventor： Sung-Ryeul Rhyu ,  Yong-Han Kim ,  Seo-Young Hwang

IPC: G06F15/16

CPC classification number: H04L65/4084 ,  H04N21/6125 ,  H04N21/8456 ,  H04N21/85406

Abstract: To store and play contents streamed in a multimedia streaming system, an operating method of a server in the multimedia streaming system includes receiving a transmission request for a Media Presentation Description (MPD) file; and transmitting the MPD file including a flag indicating whether it is possible to generate a media file that is playable by a media file player by concatenating transmitted segments.

Abstract translation: 为了存储和播放在多媒体流系统中流传输的内容，多媒体流系统中的服务器的操作方法包括接收媒体呈现描述（MPD）文件的传输请求; 并且发送MPD文件，其包括指示是否可以通过连接传输的段来生成媒体文件播放器可播放的媒体文件的标志。

公开(公告)号：US20120086515A1

公开(公告)日：2012-04-12

申请号：US13005054

申请日：2011-01-12

Applicant: Jeong Mo YANG ,  Changsik YOO ,  Young-Jin MOON ,  Yong-Seong ROH ,  Joong Ho CHOI ,  Jae Shin LEE ,  Jung Chul GONG ,  Yu Jin JANG

Inventor： Jeong Mo YANG ,  Changsik YOO ,  Young-Jin MOON ,  Yong-Seong ROH ,  Joong Ho CHOI ,  Jae Shin LEE ,  Jung Chul GONG ,  Yu Jin JANG

IPC: H03K3/353

CPC classification number: H03K3/354 ,  H03K3/0231 ,  H03K3/03 ,  H03K5/1534

Abstract: There is provided relaxation oscillator. The relaxation oscillator includes: a ramp wave generator generating ramp waves by a complementary operation between a first capacitor module charged and discharged according to a first switching signal and a second capacitor module charged and discharged according to a second switching signal; a negative feedback circuit unit generating a compensation voltage for compensating errors with reference voltage by being fedback with the ramp waves; and a switching signal generator generating the first switching signal controlling the charging and discharging of the first capacitor module and the second switching signal controlling the charging and discharging of the second capacitor module from the compensation voltage and the ramp waves. As a result, the present invention can generate ramp waves having a stable frequency while preventing a frequency from being changed due to a delay or an offset of the comparator.

Abstract translation: 提供放松振荡器。 张弛振荡器包括：斜波发生器，通过根据第一开关信号充电和放电的第一电容器模块与根据第二开关信号充放电的第二电容器模块之间的互补操作产生斜波; 负反馈电路单元，通过与斜波反馈产生用于通过参考电压补偿误差的补偿电压; 以及切换信号发生器，其产生控制第一电容器模块的充电和放电的第一开关信号和控制第二电容器模块从补偿电压和斜波的充电和放电的第二开关信号。 结果，本发明可以产生具有稳定频率的斜坡波，同时防止频率由于比较器的延迟或偏移而改变。

公开(公告)号：US20110043884A1

公开(公告)日：2011-02-24

申请号：US12545678

申请日：2009-08-21

Applicant: Doyeol AHN

Inventor： Doyeol AHN

IPC: G02F1/017 ,  B29D11/00

CPC classification number: G02F1/017 ,  B82Y20/00 ,  G02F1/01 ,  G02F2202/32 ,  G02F2203/10

Abstract: Devices, methods, and techniques for frequency-dependent optical switching are provided. In one embodiment, a device includes a substrate, a first optical-field confining structure located on the substrate, a second optical-field confining structure located on the substrate, and a composite structure located between the first and second optical-field confining structures. The second optical-field confining structure may be spaced apart from the first optical-field confining structure. The composite structure may include an embedding structure with a surface to receive photons and multiple quantum structures located in the embedding structure.

Abstract translation: 提供了用于频率相关光切换的设备，方法和技术。 在一个实施例中，器件包括衬底，位于衬底上的第一光场约束结构，位于衬底上的第二光场限制结构以及位于第一和第二光场约束结构之间的复合结构。 第二光场约束结构可以与第一光场约束结构间隔开。 复合结构可以包括具有表面以接收定位在嵌入结构中的光子和多个量子结构的嵌入结构。

公开(公告)号：US20110042721A1

公开(公告)日：2011-02-24

申请号：US12545713

申请日：2009-08-21

Applicant: Doyeol Ahn

Inventor： Doyeol Ahn

IPC: H01L29/205

CPC classification number: H01L31/035236 ,  B82Y20/00 ,  H01L31/03046 ,  H01L31/0735 ,  Y02E10/544

Abstract: Implementations of quantum well photovoltaic devices are provided. In one embodiment, a photovoltaic device includes an active layer that includes a first barrier layer, a well layer located on the first barrier layer and made of a nitride semiconductor, and a second barrier layer located on the well layer. A metal layer is located adjacent to the active layer.

Abstract translation: 提供量子阱光伏器件的实现。 在一个实施例中，光伏器件包括有源层，其包括第一势垒层，位于第一阻挡层上并由氮化物半导体制成的阱层以及位于阱层上的第二阻挡层。 金属层位于活性层附近。

公开(公告)号：US20110001125A1

公开(公告)日：2011-01-06

申请号：US12498228

申请日：2009-07-06

Applicant: Doyeol AHN

Inventor： Doyeol AHN

IPC: H01L31/112 ,  H01L31/18

CPC classification number: H01L31/112 ,  B82Y20/00 ,  G02B6/1226 ,  G02B6/131 ,  H01L31/0232 ,  H01L31/02327 ,  H01L31/1804 ,  H01L31/1828 ,  H01L31/184 ,  Y10S977/765

Abstract: Apparatuses capable of and techniques for detecting long wavelength radiation are provided.

Abstract translation: 提供了能够检测长波长辐射的装置和技术。

公开(公告)号：US20110001121A1

公开(公告)日：2011-01-06

申请号：US12498257

申请日：2009-07-06

Applicant: Doyeol AHN

Inventor： Doyeol AHN

IPC: H01L33/00

CPC classification number: H01L33/0041 ,  H01L33/025 ,  H01L33/06 ,  H01L33/14 ,  H01L33/18 ,  H01L33/28

Abstract: Semiconductor emitting devices that offset stresses applied to a quantum well region and reduce internal fields due to spontaneous and piezoelectric polarizations are disclosed. In one embodiment, a semiconductor emitting device includes a quantum well region comprising an active layer that emits light and at least one barrier layer disposed adjacent the active layer, a means for impressing an electric field across the quantum well region to inject carriers into the quantum well region, and a means for impressing an offset electric field across the quantum well region to offset the polarization field formed in the quantum well region.

Abstract translation: 公开了半导体发射器件，其抵消施加到量子阱区域的应力并减少由于自发和压电极化引起的内部场。 在一个实施例中，半导体发射器件包括量子阱区，该量子阱区包括发射光的有源层和邻近有源层设置的至少一个势垒层，用于在跨量子阱区域施加电场以将载流子注入 量子阱区，以及用于在量子阱区域上施加偏移电场的装置，以抵消在量子阱区域中形成的偏振场。

公开(公告)号：US20100301308A1

公开(公告)日：2010-12-02

申请号：US12472168

申请日：2009-05-26

Applicant: Doyeol AHN

Inventor： Doyeol AHN

IPC: H01L29/66 ,  H01L21/36

CPC classification number: H01L31/035209 ,  B82Y20/00 ,  H01L21/02554 ,  H01L21/02557 ,  H01L21/02565 ,  H01L21/02568 ,  H01L31/02327 ,  H01L31/035236 ,  H01L31/101

Abstract: Implementations of quantum well photodetectors are provided. In one embodiment, a quantum structure includes a first barrier layer, a well layer located on the first barrier layer, and a second barrier layer located on the well layer. A metal layer is located adjacent to the quantum structure.

Abstract translation: 提供了量子阱光电探测器的实现。 在一个实施例中，量子结构包括第一阻挡层，位于第一阻挡层上的阱层和位于阱层上的第二势垒层。 金属层位于量子结构附近。

公开(公告)号：US20100270592A1

公开(公告)日：2010-10-28

申请号：US12430406

申请日：2009-04-27

Applicant: Doyeol AHN

Inventor： Doyeol AHN

IPC: H01L29/205 ,  H01L21/20 ,  H01L29/225

CPC classification number: H01L31/035236 ,  B82Y20/00 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L31/0296 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521

Abstract: Semiconductor devices having at least one barrier layer with a wide energy band gap are disclosed. In some embodiments, a semiconductor device includes at least one active layer, and at least one barrier layer disposed on at least one surface of the at least one active layer. The at least one barrier layer has a wider energy band gap than the energy band gap of the at least one active layer. The compounds of the active layer and the barrier layer may be selected to reduce relaxation time of an electron or hole in the active layer.

Abstract translation: 公开了具有至少一个具有宽能带隙的阻挡层的半导体器件。 在一些实施例中，半导体器件包括至少一个有源层以及设置在至少一个有源层的至少一个表面上的至少一个势垒层。 所述至少一个阻挡层具有比所述至少一个有源层的能带隙更宽的能带隙。 可以选择有源层和阻挡层的化合物以减少有源层中电子或空穴的弛豫时间。