公开(公告)号：US20140349092A1

公开(公告)日：2014-11-27

申请号：US14453065

申请日：2014-08-06

Applicant: APPLE INC.

Inventor： Rudolf Beckmann ,  Markus Kress

IPC: C23C16/513 ,  C23C14/34 ,  C23C14/58 ,  C03C17/245

CPC classification number: C23C16/513 ,  C03C17/245 ,  C23C14/081 ,  C23C14/34 ,  C23C14/582 ,  C23C16/403 ,  C30B29/20 ,  Y10T428/24942 ,  Y10T428/265 ,  Y10T428/266

Abstract: A surface-tensioned sapphire plate and a corresponding manufacturing process. The plate may include a planar sapphire substrate and at least one layer disposed on the surface of the substrate for tensing the substrate. The layer may include at least 50 wt.-% of aluminum oxide (Al2O3). The manufacturing process for producing of a sapphire plate may include providing a planar sapphire substrate, and coating at least one surface of the substrate with a layer tensing the substrate. The layer may include at least 50 wt.-% of aluminum oxide (Al2O3).

Abstract translation: 表面张力蓝宝石板和相应的制造工艺。 板可以包括平面蓝宝石衬底和设置在衬底的表面上的用于张紧衬底的至少一层。 该层可以包括至少50重量％的氧化铝（Al 2 O 3）。 用于制造蓝宝石板的制造方法可以包括提供平面蓝宝石衬底，以及使衬底的至少一个表面涂覆有使衬底拉紧的层。 该层可以包括至少50重量％的氧化铝（Al 2 O 3）。

公开(公告)号：US20140249620A1

公开(公告)日：2014-09-04

申请号：US13668241

申请日：2012-11-03

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Gregory P. Carman ,  Daniel S. Levi ,  Youngjae Chun ,  Fernando Vinuela

IPC: A61F2/07 ,  C23C14/58 ,  C23C14/34

CPC classification number: A61F2/07 ,  A61F2/90 ,  A61F2002/068 ,  A61F2002/075 ,  A61F2002/077 ,  A61F2002/823 ,  A61F2230/0054 ,  A61L31/022 ,  A61L31/14 ,  C23C14/0005 ,  C23C14/18 ,  C23C14/185 ,  C23C14/30 ,  C23C14/34 ,  C23C14/345 ,  C23C14/5806 ,  C23C14/5873 ,  C23C16/402 ,  C23C16/513 ,  C23C28/321 ,  C23C28/345

Abstract: A flow diverter is described and fabricated using ultra-thin porous thin-film Nitinol, and is configured for implantation to a treatment site within a vessel for significant reduction in an intra-aneurismal flow velocity and vorticity. Using small size pores in a coverage area of only 10%, a 90% reduction in flow velocity into a pseudo-aneurysm can be achieved, with an almost immediate cessation of flow into an anatomical feature such as aneurysm sac in vivo. The size of the holes can be tailored to be any shape and range in size from 1-400 μm using photolithography and from 5-1000 nm using ebeam lithography.

Abstract translation: 使用超薄多孔薄膜镍钛诺描述和制造流量分流器，并且被配置为植入血管内的治疗部位以显着降低动脉内流速和涡度。 在覆盖面积仅为10％的小尺寸孔隙中，可以实现90％的流入模拟动脉瘤的流速，其中几乎立即停止流入解剖学特征如动脉瘤囊体内。 孔的尺寸可以使用光刻法定制成尺寸为1-400μm的任何形状和范围，并且使用ebeam光刻可以被定制为5-1000nm。

公开(公告)号：US08795771B2

公开(公告)日：2014-08-05

申请号：US11588595

申请日：2006-10-27

Applicant: Sean T. Barry ,  Yamile A. M. Wasslen ,  Antti H. Rahtu

Inventor： Sean T. Barry ,  Yamile A. M. Wasslen ,  Antti H. Rahtu

IPC: C23C16/00

CPC classification number: C23C16/45553 ,  C23C16/18 ,  C23C16/32 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/513

Abstract: Atomic layer deposition (ALD) type processes for producing metal containing thin films comprise feeding into a reaction space vapor phase pulses of metal containing cyclopentadienyl precursors as a metal source material. In preferred embodiments the metal containing cyclopentadienyl reactant comprises a metal atom that is not directly bonded to an oxygen or halide atom. In other embodiments the metal atom is bonded to a cyclopentadienyl compound and separately bonded to at least one ligand via a nitrogen atom. In still other embodiments the metal containing cyclopentadienyl compound comprises a nitrogen-bridged ligand.

Abstract translation: 用于制备含金属薄膜的原子层沉积（ALD）型方法包括将含有环戊二烯基前体的金属脉冲作为金属源材料进料到反应空间中。 在优选的实施方案中，含金属环戊二烯基反应物的金属原子不直接键合到氧或卤素原子上。 在其它实施方案中，金属原子键合到环戊二烯基化合物上，并通过氮原子分别与至少一个配体结合。 在其它实施方案中，含有环戊二烯基化合物的金属包含氮桥连配体。

公开(公告)号：US20140170410A1

公开(公告)日：2014-06-19

申请号：US14234811

申请日：2012-07-25

Applicant: Markus Rupprecht ,  Christian Wolfrum ,  Marco Greb ,  Eckart Theophile

Inventor： Markus Rupprecht ,  Christian Wolfrum ,  Marco Greb ,  Eckart Theophile

IPC: C23C16/513

CPC classification number: C23C16/513 ,  C23C4/00 ,  C23C4/04 ,  C23C4/12 ,  C23C4/134 ,  Y10T428/254

Abstract: The present invention relates to a method for applying a coating to a substrate using cold plasma, wherein particles provided with a polymer coating are fed into a cold plasma at less than 3,000 K and the particles activated by this are deposited on a substrate. The present invention furthermore relates to a substrate coating which can be obtained by the methods according to the invention. The present invention furthermore relates to the use of platelet-shaped particles with a polymer coating with an average thickness of less than 2 μm in the coating of a substrate using a cold plasma.

Abstract translation: 本发明涉及一种使用冷等离子体将涂层施加到基板上的方法，其中提供有聚合物涂层的颗粒在低于3,000K的条件下进料到冷等离子体中，并且由此激活的颗粒沉积在基材上。 本发明还涉及可以通过根据本发明的方法获得的基底涂层。 本发明还涉及在使用冷等离子体的基板的涂层中使用具有平均厚度小于2μm的聚合物涂层的片状颗粒。

公开(公告)号：US20130250017A1

公开(公告)日：2013-09-26

申请号：US13843470

申请日：2013-03-15

Applicant: Haruki SAITOH ,  Hijiri Ogata ,  Takehiro Nakamura ,  Masaru Hoshina

Inventor： Haruki SAITOH ,  Hijiri Ogata ,  Takehiro Nakamura ,  Masaru Hoshina

IPC: C23C16/513 ,  B41M5/50 ,  B41J11/00 ,  C23C16/52

CPC classification number: C23C16/513 ,  B41J11/0015 ,  B41M5/0011 ,  B41M5/502 ,  C08J7/00 ,  C23C16/52 ,  H01J37/32935

Abstract: A recording medium surface property modifying apparatus is disclosed. The recording medium surface property modifying apparatus includes a conveying unit which conveys a recording medium in a predetermined direction; a discharging electrode which rotates and comes into contact with a face to be treated of the recording medium which is conveyed by the conveying unit to cause the face to be treated to be in contact with plasma to modify a surface property of the recording medium; and a hollow-shaped cover member which covers a plasma treatment unit which includes the discharging electrode, the recording medium surface property modifying apparatus further including a humidity control unit which controls, in advance, humidity of the plasma treatment unit in alignment with acidity of the recording medium which undergoes the surface property modifying treatment.

Abstract translation: 公开了一种记录媒体表面特性修改装置。 记录媒体表面特性修改装置包括：传送单元，其沿预定方向传送记录介质; 与由所述输送单元输送的所述记录介质的被处理面接触的放电电极，使所述面部进行处理以与等离子体接触以改变所述记录介质的表面性质; 以及覆盖包括排出电极的等离子体处理单元的中空形盖构件，所述记录介质表面特性修改装置还包括湿度控制单元，其预先控制等离子体处理单元的湿度与所述等离子体处理单元的酸度相一致 进行表面性质改性处理的记录介质。

公开(公告)号：US20130224393A1

公开(公告)日：2013-08-29

申请号：US13768040

申请日：2013-02-15

Applicant: Forschungszentrum Julich GmbH ,  Sulzer Metco AG

Inventor： Andreas Hospach ,  Robert Vassen ,  Georg Mauer ,  Karl-Heinz Rauwald ,  Detlev Stöver ,  Konstantin von Niessen ,  Malko Gindrat

IPC: C23C4/12

CPC classification number: C23C4/137 ,  B22F1/0018 ,  B22F9/14 ,  B22F2202/13 ,  B82Y30/00 ,  C01B21/076 ,  C01B21/0821 ,  C01B21/0828 ,  C22C14/00 ,  C22C16/00 ,  C22C27/00 ,  C22C29/06 ,  C22C29/16 ,  C23C4/08 ,  C23C4/134 ,  C23C14/0021 ,  C23C14/14 ,  C23C14/228 ,  C23C16/06 ,  C23C16/513

Abstract: The invention relates to a plasma spray method which can serve as a starting point for a manufacture of metal nanopowder, nitride nanopowder or carbide nanopowder or metal films, nitride films or carbide films. To achieve an inexpensive manufacture of the nanopowder or of the film, in the plasma spray in accordance with the invention a starting material (P) which contains a metal or silicon oxide is introduced into a plasma jet (113) at a process pressure of at most 1000 Pa, in particular at most 400 Pa. The starting material (P) contains a metal or silicon oxide which vaporizes in the plasma jet (113) and is reduced in so doing. After the reduction, the metal or silicon which formed the metal or silicon oxide in the starting material is thus present in pure form or in almost pure form. The metal or silicon can be deposited in the form of nanopowder or of a film (124). Nitride nanoparticles or films or carbide nanoparticles or films can be generated inexpensively by addition of a reactant (R) containing nitrogen or carbon.

Abstract translation: 本发明涉及一种等离子喷涂方法，其可以用作制造金属纳米粉末，氮化物纳米粉末或碳化物纳米粉末或金属膜，氮化物膜或碳化物膜的起点。 为了实现廉价的纳米粉末或薄膜的制造，在根据本发明的等离子体喷涂中，将含有金属或氧化硅的起始材料（P）以过程压力引入等离子体射流（113） 最大1000Pa，特别是400Pa以下，起始原料（P）含有在等离子体射流（113）中蒸发的金属或氧化硅，并在此减少。 在还原之后，起始材料中形成金属或氧化硅的金属或硅因此以纯形式或几乎纯净的形式存在。 金属或硅可以以纳米粉末或薄膜（124）的形式沉积。 通过加入含有氮或碳的反应物（R）可以廉价地生成氮化物纳米颗粒或膜或碳化物纳米颗粒或膜。

公开(公告)号：US20130196080A1

公开(公告)日：2013-08-01

申请号：US13751282

申请日：2013-01-28

Applicant: ASM IP Holding B.V.

Inventor： Hyun-Kyu CHO

IPC: C23C16/52

CPC classification number: C23C16/513 ,  C23C16/45536 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32899

Abstract: A deposition apparatus according to an exemplary embodiment of the present invention includes a plurality of reactors; a plurality of gas supply units connected to the plurality of reactors; and a plurality of plasma supply units connected to the plurality of reactors. Each of the plasma supply units includes: a plasma power supplier; a plurality of diodes connected to the plasma power supplier; and a reverse voltage driver connected to the plurality of diodes through respectively corresponding switches.

Abstract translation: 根据本发明的示例性实施例的沉积设备包括多个反应器; 连接到所述多个反应器的多个气体供给单元; 以及与多个反应器连接的多个等离子体供给单元。 每个等离子体供应单元包括：等离子体供电器; 连接到等离子体电源的多个二极管; 以及通过分别对应的开关连接到所述多个二极管的反向电压驱动器。

公开(公告)号：US08389071B2

公开(公告)日：2013-03-05

申请号：US13149352

申请日：2011-05-31

Applicant: Naruhisa Nagata

Inventor： Naruhisa Nagata

IPC: H05H1/24 ,  C23C16/00 ,  C23C16/26

CPC classification number: G11B5/8408 ,  C23C16/26 ,  C23C16/45591 ,  C23C16/513 ,  H01J37/09 ,  H01J37/32431 ,  H01J2237/026 ,  H01J2237/3321

Abstract: An apparatus and method for forming a carbon protective layer on a substrate using a plasma CVD method allows a more uniform in-plane distribution of the carbon protective layer thickness. The apparatus includes an annular anode that generates a plasma beam and a disk-shaped shield disposed between the anode and the substrate. The anode, the shield, and the substrate are concentrically arranged so that a straight line connecting the centers of the anode and the substrate is perpendicular to the deposition surface of the substrate where the carbon protective layer is to be formed. The center of the shield is also on the straight line.

Abstract translation: 使用等离子体CVD法在基板上形成碳保护层的装置和方法允许碳保护层厚度的更均匀的面内分布。 该装置包括产生等离子体束的环形阳极和设置在阳极和衬底之间的盘形屏蔽。 阳极，屏蔽体和基板同心配置，使得连接阳极和基板的中心的直线垂直于要形成碳保护层的基板的沉积表面。 盾牌的中心也在直线上。

公开(公告)号：US20130017342A1

公开(公告)日：2013-01-17

申请号：US13512557

申请日：2010-11-30

Applicant: Claudia Riccardi ,  Moreno Piselli ,  Francesco Sirio Fumagalli ,  Fabio Di Fonzo ,  Carlo Enrico Bottani

Inventor： Claudia Riccardi ,  Moreno Piselli ,  Francesco Sirio Fumagalli ,  Fabio Di Fonzo ,  Carlo Enrico Bottani

IPC: C23C16/513 ,  C23C16/511 ,  C23C14/34 ,  C23C16/505

CPC classification number: C23C16/513

Abstract: A method for producing, by means of plasma, nanostructured thin layers particularly of the hierarchically organized type, and an apparatus for implementing the method, are described. At least a first chamber (10) is provide in which are present an injector (14) of a reagent gas, means (31, 31′) for feeding inert gases, and an antenna (16) for the creation of a plasma in said first chamber. Enclosing said first chamber is a second chamber (11) to which a pumping system is connected, containing a housing for the substrate (35) on which the nanostructured film is produced. A wall (12) separates said first chamber from said second chamber and has at least one opening (13). The injector and antenna are arranged in the first chamber with a geometry such that the distance between the outlet of said injector is at a distance of no more than 5 cm from the plane of the surface of said antenna farther from said wall, and said surface is at a distance of no more than 5 cm from said opening.

Abstract translation: 描述了通过等离子体生产特别是分层组织型纳米结构薄层的方法和用于实现该方法的装置。 至少提供第一室（10），其中存在反应气体的喷射器（14），用于供给惰性气体的装置（31,31'），以及用于在所述第一腔室中产生等离子体的天线（16） 第一室。 封闭所述第一室是第二室（11），泵送系统连接到所述第二室（11），所述第二室包含用于制造所述纳米结构膜的所述基板（35）的壳体。 壁（12）将所述第一室与所述第二室分开并具有至少一个开口（13）。 注射器和天线布置在第一腔室中，其几何形状使得所述喷射器的出口之间的距离距离所述天线的离所述壁的表面的平面不超过5cm的距离，并且所述表面 距离所述开口不超过5cm的距离。

公开(公告)号：US08281741B2

公开(公告)日：2012-10-09

申请号：US13019269

申请日：2011-02-01

Applicant: Chia-Chiang Chang ,  Chin-Jyi Wu ,  Shin-Chih Liaw ,  Chun-Hung Lin

Inventor： Chia-Chiang Chang ,  Chin-Jyi Wu ,  Shin-Chih Liaw ,  Chun-Hung Lin

IPC: C23C16/455 ,  C23C16/452 ,  C23C16/50 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC classification number: C23C16/402 ,  C23C16/345 ,  C23C16/45563 ,  C23C16/45595 ,  C23C16/513

Abstract: A plasma deposition apparatus is provided. The plasma deposition apparatus comprises a chamber. A pedestal is placed in the chamber. A plasma generator is placed in the chamber and over the pedestal. The plasma generator comprises a plasma jet for plasma thin film deposition having a discharge direction angle θ1 larger than 0° and less than 90° between a normal direction of the pedestal and the discharge direction of the plasma jet. A gas-extracting pipe extends into the chamber and over the pedestal. The gas-extracting pipe provides a pumping path for particles and side-products having a pumping direction angle θ2 larger than 0° and less than 90° between the normal direction of the pedestal and the pumping direction of the gas-extracting pipe. The chamber is kept at an ambient atmospheric pressure.

Abstract translation: 提供了一种等离子体沉积装置。 等离子体沉积设备包括一个室。 底座放置在腔室中。 等离子体发生器放置在腔室中并在基座上方。 等离子体发生器包括用于等离子体薄膜沉积的等离子体射流，其具有放电方向角度θ;在基座的法线方向与等离子体射流的排出方向之间大于0°且小于90°的1。 气体提取管延伸到腔室中并且在基座上。 气体提取管为具有泵送方向角度的颗粒和副产物提供泵送路径; 2在基座的法线方向与气体提取管的泵送方向之间大于0°且小于90°。 室保持在环境大气压力。