Abstract:
A plating apparatus (1) includes: a holding member (2) that holds a plated object (W); a spacer (4) that is stacked on the holding member (2) via a first seal member (3) in an annular shape surrounding the plated object (W), and has a through portion (45) from which the plated object (W) is exposed and which stores a plating solution; and an anode member (6) that is stacked on the spacer (4) via a second seal member (3) in an annular shape surrounding the through portion (45), and has an anode layer (62) arranged to face the plated object (W) which is exposed from the through portion (45).
Abstract:
In a processing system for electroplating semiconductor wafers and similar substrates, the contact ring of the electroplating processor is removed from the rotor of the processor and replaced with a previously deplated contact ring. This allows the contact ring to be deplated in ring service module of the system, while the processor continues to operate. Wafer throughput is improved. The contact ring may be attached to a chuck for moving the contact ring between the processors and the ring service module, with the chuck quickly attachable and releasable to the rotor.
Abstract:
A plating apparatus includes a processing bath configured to store a processing liquid therein, a transporter configured to immerse a substrate holder, holding a substrate, in the processing liquid, raise the substrate holder out of the processing bath, and transport the substrate holder in a horizontal direction, and a gas flow generator configured to generate a clean gas flow forward of the substrate with respect to a direction in which the substrate holder is transported. The transporter moves the gas flow generator together with the substrate holder in the horizontal direction while transporting the substrate holder in the horizontal direction.
Abstract:
A method and device for vertical galvanic metal deposition on a substrate, the device including at least first and second device elements arranged vertically parallel to each other, the first device element including at least a first anode element having a plurality of through-going conduits and at least a first carrier element having a plurality of through-going conduits, the at least first anode element and the at least first carrier element firmly connected to each other; and the second device element including at least a first substrate holder adapted to receive at least one substrate to be treated, the at least one substrate holder at least partially surrounding the at least one substrate along its outer frame after receiving it; the distance between the first anode element and the at least first substrate holder ranging from 2 to 15 mm.
Abstract:
Apparatus and methods for electroplating are described. Apparatus described herein include anode supports including positioning mechanisms that maintain a consistent distance between the surface of the wafer and the surface of a consumable anode during plating. Greater uniformity control is achieved.
Abstract:
Providing an anode capable of desirably performing plating for a long period of time. An anode is cylindrical and forms a space between an article to be plated and itself. A plating solution flows in the space. Positive voltage is applied to the anode. The anode includes an outer cylinder and an inner cylinder welded to be in contact with an inner surface of the outer cylinder. The inner cylinder is formed of a plate material made from platinum.
Abstract:
Techniques disclosed herein include an electro-chemical deposition apparatus that provides an efficient circulation system, chemical management that provides reliable and uniform plating, and a configuration that provides short maintenance times and greater tool availability. Techniques include a processing tank containing an anolyte fluid, and one or more plating cells each having a catholyte fluid compartment with a circulation path that connects to a separate or remote catholyte reservoir. Thus, with such a configuration, a single pump can be used to flow catholyte (via manifolds) through one or more plating cells. Thus, with the catholyte reservoir maintained off board, instead of dumping catholyte over a weir into a reservoir, catholyte fluid—after flowing through a plating cell—is returned to the catholyte reservoir.
Abstract:
A device is for treating and packaging implants. The device includes a container including a chamber therein. The chamber is closed by a removable seal. The device also includes a carrier sized and shaped to be inserted into the chamber. The carrier includes a carrying structure configured to connect an implant thereto. A portion of the carrier may be formed of an electrically conductive material.
Abstract:
An electric plating hanging rod assembly for supporting a work piece to be plated, comprises a hanging rod having an upper retaining bar and a lower retaining bar; a distal end of the upper retaining bar far away from the hanging rod being pointed upwards; and a distal end of the lower retaining bar far away from the hanging rod being pointed downwards. The hanging rod extended with at least one upper supporting rod and at least one lower supporting rod which are alternatively arranged; at a distal end of the upper supporting rod far away from the hanging rod is fixed with an upper retaining bar and at a distal end of the lower supporting rod far away from the hanging rod is fixed with a lower retaining bar. A distal end of each of the upper and lower retaining is formed as a tapered reduced end.
Abstract:
The present invention relates to applying at least one ultra/mega sonic device and its reflection plate for forming standing wave in a metallization apparatus to achieve highly uniform metallic film deposition at a rate far greater than conventional film growth rate in electrolyte. In the present invention, the substrate is dynamically controlled so that the position of the substrate passing through the entire acoustic field with different power intensity in each motion cycle. This method guarantees each location of the substrate to receive the same amount of total sonic energy dose over the interval of the process time, and to accumulatively grow a uniform deposition thickness at a rapid rate.