Abstract:
A charged-particle beam lens includes a plate-like anode, a plate-like cathode, and an insulator disposed between the anode and the cathode. The insulator, the anode, and the cathode have a passage portion through which a charged beam is passed. A high-resistance film is formed on an inner side of the insulator, the inner side forming the passage portion, or an outermost side of insulator, and the anode and the cathode are electrically connected together via the high-resistance film. The anode and the high-resistance film, and the cathode and the high-resistance film each contain the same metal or semiconductor element and have different resistant values. This suppresses electric field concentration due to an increase in resistance and poor connection at the interface between the anode and the cathode and the high-resistance film or at the interface between the electroconductive film and the high-resistance film, thus suppressing generation of discharge.
Abstract:
The invention relates to a charged particle multi-beamlet system for exposing a target using a plurality of beamlets. The system has a charged particle source, an aperture array, a beamlet manipulator, a beamlet blanker, and an array of projection lens systems. The charged particle source is configured to generate a charged particle beam. The aperture array is configured to define separate beamlets from the generated beam. The beamlet manipulator is configured to converge groups of the beamlets towards a common point of convergence for each group. The beamlet blanker is configured to controllably blank beamlets in the groups of beamlets. Finally, the array of projection lens systems is configured to project unblanked beamlets of the groups of beamlets on to the surface of the target. The beamlet manipulator is further adapted to converge each of the groups of beamlets towards a point corresponding to one of the projection lens systems.
Abstract:
The invention relates to a charged particle based lithography system for projecting an image on a target using a plurality of charged particle beamlets for transferring said image to said target, said system comprising a charged particle column comprising:an electron optical subassembly comprising a charged particle source, a collimator lens, an aperture array, a blanking means and a beamstop for generating a plurality of charged particle beamlets; anda projector for projecting said plurality of charged particle beamlets on said target;said projector being moveably included in the system by means of at least one projector actuator for moving said projector relative to said electron optical subassembly;said projector actuator being included for mechanically actuating said projector and providing said projector with at least one degree of freedom of movement;wherein said degree of freedom relates to a movement around an optical axis of the system.
Abstract:
An electron-optical arrangement provides a primary beam path for a beam of primary electrons and a secondary beam path for secondary electrons. The electron-optical arrangement includes a magnet arrangement having first, second and third magnetic field regions. The first magnetic field region is traversed by the primary beam path and the secondary beam path. The second magnetic field region is arranged in the primary beam path upstream of the first magnetic field region and is not traversed by the secondary beam path. The first and second magnetic field regions deflect the primary beam path in substantially opposite directions. The third magnetic field region is arranged in the secondary beam path downstream of the first magnetic field region and is not traversed by the first beam path. The first and third magnetic field regions deflect the secondary beam path in a substantially same direction.
Abstract:
An in-lens type objective lens is separated into two parts along the plane perpendicular to the direction of electron or ion orbit, so that a target sample can placed between the upper part and the lower part of the lens. Coils for the two parts are serially connected so as to work as one coil. Each of the upper and lower parts of the lens is provided with a lens positioning device. If the in-lens type objective lens is of a three-piece electrostatic type, a structure is provided which enables a target sample to be placed between a first and second electrode group and the third electrode.
Abstract:
Provided is a charged particle beam device for which deterioration in throughput in the event of abnormality of multiple beams can be prevented. The charged particle beam device includes: a stage 11 on which a sample is mounted; a charged particle optical system configured to irradiate the sample with multiple beams including multiple primary beams; a detector 15 configured to detect secondary beams generated by interactions between the primary beams and the sample and output detection signals; and a control unit 17 configured to control the stage and the charged particle optical system to generate image data based on the detection signals from the detector obtained by scanning the sample with the multiple beams using a first scanning method. The control unit changes, when the abnormality of the multiple beams is detected based on the image data, the multiple beams to scan the sample using a second scanning method, and a scanning width of the multiple beams for scanning the sample is greater in the second scanning method than in the first scanning method.
Abstract:
A multi-beam particle beam system comprises a particle beam source for creating a beam of charged particles, and a beam splitter for splitting the beam into a bundle of particle beams. The beam splitter comprises a multi-aperture plate having openings. A particle optical unit is provided to focus each of the particle beams in an object plane. A correction optical unit is provided for compensating for at least one aberration of the particle optical unit and comprises three or five hexapod elements and a plurality of round lens elements. The hexapod elements are successively arranged between the particle source and the multi-aperture plate in the beam path. A round lens element is arranged between each pair of hexapod elements arranged directly in succession in the beam path.
Abstract:
A multi-beam electronics scanning system using swathing. The system includes an electron emitter source configured to emit an illumination beam. The illumination beam is split into multiple electron beams by a beam splitter lens array. The system also includes an electronic deflection system configured to deflect each of the electron beams in a plurality of directions, including a first direction, along two different axes. Last, a swathing stage is used to move a sample with a constant velocity in a second direction that is parallel to the first direction.
Abstract:
A multi-beam apparatus for observing a sample with high resolution and high throughput and in flexibly varying observing conditions is proposed. The apparatus uses a movable collimating lens to flexibly vary the currents of the plural probe spots without influencing the intervals thereof, a new source-conversion unit to form the plural images of the single electron source and compensate off-axis aberrations of the plural probe spots with respect to observing conditions, and a pre-beamlet-forming means to reduce the strong Coulomb effect due to the primary-electron beam.
Abstract:
As a device for correcting positive spherical aberration of an electromagnetic lens for a charged particle beam, a spherical aberration correction device combining a hole electrode and a ring electrode is known. In this spherical aberration correction device, when a voltage is applied between the hole electrode and the ring electrode, the focus of the charged particle beam device changes due to the convex lens effect generated in the hole electrode. Therefore, in a charged particle beam device including a charged particle beam source which generates a charged particle beam, a charged particle beam aperture having a ring shape, and a charged particle beam aperture power supply which applies a voltage to the charged particle beam aperture, the charged particle beam aperture power supply is configured to apply, to the charged particle beam aperture, a voltage having a polarity opposite to a polarity of charges of the charged particle beam.