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    Radioactive ray detector and radioactive ray detecting apparatus
    44.
    发明授权
    Radioactive ray detector and radioactive ray detecting apparatus 有权
    放射线检测器和放射线检测装置

    公开(公告)号：US09171987B2

    公开(公告)日：2015-10-27

    申请号：US13813335

    申请日：2011-08-01

    申请人： Isao Takahashi ,  Yoshinori Sunaga ,  Hidetaka Kawauchi

    发明人： Isao Takahashi ,  Yoshinori Sunaga ,  Hidetaka Kawauchi

    IPC分类号： H01L31/118 ,  G01T1/24

    CPC分类号： H01L31/118 ,  G01T1/241 ,  G01T1/243

    摘要： An object of the present invention is to provide a radioactive ray detector for enabling to reduce the parasitic capacity lower than that of the conventional art, which is generated between the semiconductor elements of the radioactive ray detectors neighboring with, and a radioactive ray detecting apparatus applying that therein. The radioactive ray detector, comprises a substrate, a first semiconductor element and a second semiconductor element, which are provided to face to each other with positioning the substrate therebetween, a first electrode pattern, which is electrically connected with the first semiconductor element on a surface facing to an opposite side of the substrate, and a second electrode pattern, which is electrically connected with the second semiconductor element on a surface facing to an opposite side of the substrate, wherein the first electrode pattern and the second electrode pattern are arranged not to overlap with each other, when seeing through the substrate in a direction of thickness thereof.

    摘要翻译： 本发明的目的是提供一种放射线检测器，其能够降低与在与其相邻的放射线检测器的半导体元件之间产生的常规技术的寄生电容，并且使用放射线检测装置 在那里。 放射线检测器包括基板，第一半导体元件和第二半导体元件，它们通过将基板定位在彼此之间而彼此面对;第一电极图案，其在表面上与第一半导体元件电连接 面向基板的相对侧的第二电极图案以及与所述第二半导体元件在与所述基板相对的一侧的表面上电连接的第二电极图案，其中，所述第一电极图案和所述第二电极图案配置为不 当通过基板的厚度方向观察时，彼此重叠。

    Semiconductor radiation detector having voltage application means comprises InxCdyTez on CdTe semiconductor substrate
    45.
    发明授权
    Semiconductor radiation detector having voltage application means comprises InxCdyTez on CdTe semiconductor substrate 有权
    具有电压施加装置的半导体辐射检测器包括CdTe半导体衬底上的InxCdyTez

    公开(公告)号：US06975012B2

    公开(公告)日：2005-12-13

    申请号：US10697129

    申请日：2003-10-29

    申请人： Miki Moriyama ,  Masaki Murakami ,  Atsushi Kyan ,  Ryoichi Ohno

    发明人： Miki Moriyama ,  Masaki Murakami ,  Atsushi Kyan ,  Ryoichi Ohno

    IPC分类号： G01T1/24 ,  H01L27/14 ,  H01L31/0224 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/09 ,  H01L31/108 ,  H01L31/118 ,  H01L31/07 ,  H01L31/105 ,  H01L31/117

    CPC分类号： H01L31/022408 ,  H01L31/0296 ,  H01L31/032 ,  H01L31/118

    摘要： Disclosed is a semiconductor radiation detector element of Schottky barrier type, comprising: a compound semiconductor crystal including cadmium and tellurium as main components; and voltage application means for applying voltage to the compound semiconductor crystal. According to the present invention, said voltage application means includes a compound of indium, cadmium and tellurium: InxCdyTez formed on one surface of the compound semiconductor crystal. Preferably, the rate “z” of occupation of tellurium in the compound InxCdyTez is in the range of not less than 42.9%, but not greater than 50% by ratio of number of atoms. Furthermore, preferably, the rate “y” of occupation of cadmium in the compound InxCdyTez is in the range of not less than 0%, but not greater than 10% by ratio of number of atoms.

    摘要翻译： 公开了一种肖特基势垒型半导体辐射检测元件，其特征在于，包括：以镉和碲为主要成分的化合物半导体晶体; 以及用于向化合物半导体晶体施加电压的电压施加装置。 根据本发明，所述电压施加装置包括铟，镉和碲的化合物：在一个上形成的一个或多个Cd 化合物半导体晶体的表面。 优选地，化合物中的碲的占据率“z”在不小于42.9的范围内 ％，但不大于50％的原子数比。 此外，优选地，化合物中的Cd的占据的比率“y”在不小于 超过原子数的0％，但不大于10％。

    Semiconductor radioactive ray detector
    46.
    发明授权
    Semiconductor radioactive ray detector 失效
    半导体放射线检测器

    公开(公告)号：US4692782A

    公开(公告)日：1987-09-08

    申请号：US613890

    申请日：1984-05-24

    申请人： Yasukazu Seki ,  Noritada Sato ,  Masaya Yabe

    发明人： Yasukazu Seki ,  Noritada Sato ,  Masaya Yabe

    IPC分类号： G01T1/24 ,  H01L31/09 ,  H01L31/115 ,  H01L31/118 ,  H01L27/14 ,  G01T1/22

    CPC分类号： H01L31/1185 ,  H01L31/115 ,  H01L31/118

    摘要： In the representative radiation detectors described in the specification, an amorphous silicon layer is grown on one or both of the opposed electrode surfaces of a single crystal silicon substrate and the amorphous silicon layer extends to the side surface of the substrate. The corresponding electrode is deposited on the amorphous silicon layer. Detectors may also be made using a single crystal of Ge, GeAs or CdTe with an amorphous layer of the same or another semiconductor material.

    摘要翻译： 在本说明书中描述的代表性辐射探测器中，在单晶硅衬底的一个或两个相对的电极表面上生长非晶硅层，并且非晶硅层延伸到衬底的侧表面。 相应的电极沉积在非晶硅层上。 也可以使用具有相同或另一种半导体材料的非晶层的Ge，GeAs或CdTe的单晶制造检测器。

    Epitaxial integrated E-dE solid state detector telescope
    47.
    发明授权
    Epitaxial integrated E-dE solid state detector telescope 失效
    外延集成E-DE固态探测望远镜

    公开(公告)号：US4340899A

    公开(公告)日：1982-07-20

    申请号：US117352

    申请日：1980-01-31

    申请人： Kazuo Husimi ,  Chisu Kim

    发明人： Kazuo Husimi ,  Chisu Kim

    IPC分类号： G01T1/24 ,  H01L31/09 ,  H01L31/118 ,  H01L27/14

    CPC分类号： H01L31/118

    摘要： An epitaxial integrated E-dE solid state detector telescope comprising a dE detector produced on an epitaxial layer and a E detector produced on a high purity silicon layer, both of which are fabricated on a single silicon wafer having N-N.sup.+ -N type complex structure. Said dE and E detectors are electrically isolated by a very low resistive N.sup.+ type silicon layer, which is produced on the high purity N type silicon substrate by impurity diffusion technique and is buried under the epitaxial silicon layer. Electrodes of dE and E detectors are produced on both sides of the silicon wafer by means of evaporation of gold in a vacuum. Said electrodes are reverse biased and depletion layers which act as active regions of dE and E detectors are extended from outsides toward said buried layer, providing independent charge collections of carries produced by incident charged particles in dE and E detectors by said electrodes.

    摘要翻译： 一种外延集成E-dE固态检测器望远镜，其包括在外延层上产生的dE检测器和在高纯度硅层上产生的E检测器，两者都制造在具有N-N + -N型复合结构的单个硅晶片上 。 所述dE和E检测器通过非常低电阻的N +型硅层电隔离，其通过杂质扩散技术在高纯N型硅衬底上产生，并被埋在外延硅层之下。 通过在真空中蒸发金，在硅晶片的两侧产生dE和E检测器的电极。 所述电极是反向偏置的，充当dE和E检测器的有源区的耗尽层从外部延伸到所述掩埋层，从而通过所述电极提供由dE和E检测器中的入射带电粒子产生的载体的独立电荷收集。

    Cadmium telluride photovoltaic radiation detector
    48.
    发明授权
    Cadmium telluride photovoltaic radiation detector 失效
    碲化镉光伏辐射探测器

    公开(公告)号：US4243885A

    公开(公告)日：1981-01-06

    申请号：US78759

    申请日：1979-09-25

    申请人： Dimitrios C. Agouridis ,  Richard J. Fox

    发明人： Dimitrios C. Agouridis ,  Richard J. Fox

    IPC分类号： G01T1/02 ,  G01T1/24 ,  H01L31/115 ,  H01L31/118

    CPC分类号： H01L31/118 ,  G01T1/026 ,  G01T1/24 ,  H01L31/115

    摘要： A dosimetry-type radiation detector is provided which employs a polycrystalline, chlorine-compensated cadmium telluride wafer fabricated to operate as a photovoltaic current generator used as the basic detecting element. A photovoltaic junction is formed in the wafer by painting one face of the cadmium telluride wafer with an n-type semiconductive material. The opposite face of the wafer is painted with an electrically conductive material to serve as a current collector. The detector is mounted in a hermetically sealed vacuum containment. The detector is operated in a photovoltaic mode (zero bias) while DC coupled to a symmetrical differential current amplifier having a very low input impedance. The amplifier converts the current signal generated by radiation impinging upon the barrier surface face of the wafer to a voltage which is supplied to a voltmeter calibrated to read quantitatively the level of radiation incident upon the detecting wafer.

    摘要翻译： 提供了一种剂量测定型辐射检测器，其使用制造成作为用作基本检测元件的光伏电流发生器操作的多晶氯氯化碲化镉晶片。 通过用n型半导体材料涂覆碲化镉晶片的一面，在晶片中形成光伏结。 用导电材料涂覆晶片的相对面以用作集电器。 检测器安装在气密密封的真空容器中。 检测器以光伏模式（零偏置）工作，而DC耦合到具有非常低的输入阻抗的对称差分电流放大器。 放大器将通过辐射照射在晶片的屏障表面上的辐射产生的电流信号转换成电压，该电压被提供给校准为定量读取入射在检测晶片上的辐射水平的电压表。

    Semiconductor detector for detecting ionizing radiation
    49.
    发明授权
    Semiconductor detector for detecting ionizing radiation 失效
    用于检测电离辐射的半导体检测器

    公开(公告)号：US4122345A

    公开(公告)日：1978-10-24

    申请号：US773834

    申请日：1977-03-02

    申请人： Henri Rougeot

    发明人： Henri Rougeot

    IPC分类号： G01T1/20 ,  H01G9/20 ,  H01L31/0232 ,  H01L31/0352 ,  H01L31/118 ,  G01T1/22

    CPC分类号： G01T1/2018 ,  H01G9/20 ,  H01L31/02322 ,  H01L31/035281 ,  H01L31/118 ,  Y02E10/50

    摘要： The invention relates to a semiconductor detector for detecting ionizing radiation. The surface barrier required for the formation of field zones in the semiconductor body (1) is created by contact between the semiconductor body (1) and an electrolyte (3) in which it is immersed. In addition, the body is cut out, in the form of a comb in the example, in such a way as to increase its active surface as much as possible. The source (8) maintains the potential difference V.sub.o between the contact (5) on the body (1) and the cathode (7). The output signal s is extracted at (6).

    摘要翻译： 本发明涉及一种用于检测电离辐射的半导体检测器。 在半导体本体（1）中形成场区所需的表面屏障是通过半导体本体（1）和浸入其中的电解质（3）之间的接触产生的。 此外，在实施例中以梳子的形式切割身体，以尽可能地增加其活动表面。 源极（8）保持主体（1）上的触点（5）与阴极（7）之间的电位差Vo。 在（6）处提取输出信号s。