公开(公告)号：US20050286287A1

公开(公告)日：2005-12-29

申请号：US11154941

申请日：2005-06-17

Applicant: Yoon-dong Park ,  Jo-won Lee ,  Chung-woo Kim ,  Eun-hong Lee ,  Sun-ae Seo ,  Woo-joo Kim ,  Hee-soon Chae ,  Soo-doo Chae ,  I-hun Song

Inventor： Yoon-dong Park ,  Jo-won Lee ,  Chung-woo Kim ,  Eun-hong Lee ,  Sun-ae Seo ,  Woo-joo Kim ,  Hee-soon Chae ,  Soo-doo Chae ,  I-hun Song

IPC: G11C11/56 ,  G11C16/04 ,  G11C16/28 ,  H01L21/8247 ,  H01L27/06 ,  H01L27/115 ,  G11C5/06

CPC classification number: G11C11/5621 ,  H01L27/0688 ,  H01L27/11521 ,  H01L27/11551

Abstract: Provided are a complementary nonvolatile memory device, methods of operating and manufacturing the same, a logic device and semiconductor device having the same, and a reading circuit for the same. The complementary nonvolatile memory device includes a first nonvolatile memory and a second nonvolatile memory which are sequentially stacked and have a complementary relationship. The first and second nonvolatile memories are arranged so that upper surfaces thereof are contiguous.

Abstract translation: 提供了一种互补的非易失性存储器件，其操作和制造方法，逻辑器件和具有该非易失性存储器件的半导体器件及其读取电路。 互补非易失性存储器件包括顺序堆叠并具有互补关系的第一非易失性存储器和第二非易失性存储器。 第一和第二非易失性存储器被布置成使得其上表面相邻。

公开(公告)号：US20050158882A1

公开(公告)日：2005-07-21

申请号：US11033830

申请日：2005-01-13

Applicant: Soon-won Hwang ,  I-hun Song ,  Geun-young Yeom ,  Seok-jae Chung

Inventor： Soon-won Hwang ,  I-hun Song ,  Geun-young Yeom ,  Seok-jae Chung

IPC: H01L21/28 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L43/00 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/12 ,  G11C11/16

Abstract: Provided is a method of manufacturing a nano-sized MTJ cell in which a contact in the MTJ cell is formed without forming a contact hole. The method of forming the MTJ cell includes forming an MTJ layer on a substrate, forming an MTJ cell region by patterning the MTJ layer, sequentially depositing an insulating layer and a mask layer on the MTJ layer, exposing an upper surface of the MTJ cell region by etching the mask layer and the insulating layer at the same etching rate, and depositing a metal layer on the insulating layer and the MTJ layer.

Abstract translation: 提供一种制造其中形成MTJ电池中的接触而不形成接触孔的纳米尺寸的MTJ电池的方法。 形成MTJ单元的方法包括在基板上形成MTJ层，通过图案化MTJ层形成MTJ单元区域，在MTJ层上依次沉积绝缘层和掩模层，暴露MTJ单元区域的上表面 通过以相同的蚀刻速率蚀刻掩模层和绝缘层，并在绝缘层和MTJ层上沉积金属层。

公开(公告)号：US06894920B2

公开(公告)日：2005-05-17

申请号：US10465602

申请日：2003-06-20

Applicant: Tae-wan Kim ,  Kee-won Kim ,  Wan-jun Park ,  I-hun Song ,  Sang-jin Park

Inventor： Tae-wan Kim ,  Kee-won Kim ,  Wan-jun Park ,  I-hun Song ,  Sang-jin Park

IPC: H01L27/105 ,  G11C11/15 ,  G11C11/18 ,  H01L21/8246 ,  H01L43/06 ,  G11C11/00

CPC classification number: G11C11/18 ,  G11C11/1675

Abstract: A magnetic RAM (MRAM) using a thermo-magnetic spontaneous Hall effect includes a MOS transistor formed on a substrate; a heating layer formed above the MOS transistor and connected to a source region of the MOS transistor; a memory layer having a data write area to which data is written, the data write area being formed on the heating means; a bit line formed on the data write area; an upper insulating film formed on the bit line and the memory layer; and a write line formed on the upper insulating film so that a magnetic field necessary for writing data is generated in at least the data write area of the memory layer. The MRAM writes or reads data using the fact that a spontaneous Hall voltage greatly differs according to the magnetization state of a memory layer, thereby providing the device a high data sensing margin.

Abstract translation: 使用热磁自发霍尔效应的磁性RAM（MRAM）包括形成在基板上的MOS晶体管; 形成在所述MOS晶体管的上方并与所述MOS晶体管的源极区连接的加热层; 存储层，具有写入数据的数据写入区域，所述数据写入区域形成在所述加热装置上; 形成在数据写入区上的位线; 形成在位线和存储层上的上绝缘膜; 以及形成在上绝缘膜上的写入线，使得至少在存储层的数据写入区域中产生写入数据所需的磁场。 MRAM使用自发霍尔电压根据存储器层的磁化状态大大不同的事实来写入或读取数据，从而为器件提供高数据感测余量。

公开(公告)号：US20050036399A1

公开(公告)日：2005-02-17

申请号：US10950584

申请日：2004-09-28

Applicant: Wan-jun Park ,  Taek-dong Lee ,  Byeong-kook Park ,  Tae-wan Kim ,  I-hun Song ,  Sang-jin Park

Inventor： Wan-jun Park ,  Taek-dong Lee ,  Byeong-kook Park ,  Tae-wan Kim ,  I-hun Song ,  Sang-jin Park

IPC: H01L27/105 ,  G11C11/15 ,  G11C11/34 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/82 ,  H01L43/08

CPC classification number: H01L27/228 ,  B82Y10/00

Abstract: A magneto-resistive random access memory includes a MOS transistor having a first gate and source and drain junctions on a substrate, a lower electrode connected to the source junction, a first magnetic layer on the lower electrode, a dielectric barrier layer including aluminum and hafnium on the first magnetic layer which, together with the first magnetic layer, form a potential well, a second magnetic layer on the dielectric barrier layer opposite the first magnetic layer, an upper electrode on the second magnetic layer, a second gate interposed between the first gate and the lower electrode to control the magnetic data of one of the first and second magnetic layers, and a bit line positioned orthogonal to the first gate and electrically connected to the upper electrode. Improved characteristics of the barrier layer increase a magnetic resistance ratio and improve data storage capacity of the magneto-resistive random access memory.

Abstract translation: 磁阻随机存取存储器包括MOS晶体管，其具有第一栅极和衬底上的源极和漏极结，连接到源极结的下部电极，下部电极上的第一磁性层，包括铝和铪的介电阻挡层 在与第一磁性层一起形成势阱的第一磁性层上，与第一磁性层相对的介电阻挡层上的第二磁性层，第二磁性层上的上部电极，位于第一磁性层之间的第二栅极 栅极和下部电极，以控制第一和第二磁性层之一的磁性数据，以及与第一栅极正交并电连接到上部电极的位线。 阻挡层的改进的特性提高了磁阻比并提高了磁阻随机存取存储器的数据存储容量。

公开(公告)号：US5248660A

公开(公告)日：1993-09-28

申请号：US814874

申请日：1991-12-31

Applicant: Een H. Lee ,  I. Hun Song ,  Seok Y. Yoon

Inventor： Een H. Lee ,  I. Hun Song ,  Seok Y. Yoon

IPC: C01G1/00 ,  C01G3/00 ,  C04B35/45 ,  C04B35/653 ,  C22C1/10 ,  C30B29/22 ,  H01L39/24

CPC classification number: C04B35/653 ,  C04B35/4508 ,  H01L39/2419 ,  H01L39/2483 ,  Y10S505/733 ,  Y10S505/742

Abstract: A process of preparing a yttrium based superconductor including partial melting a body of YBa.sub.2 Cu.sub.3 O.sub.y compound which is stacked on a Y.sub.2 BaCuO.sub.5 plate, to produce a liquid phase, BaCu.sub.2.CuO which flows down into the Y.sub.2 BaCuO.sub.5 plate, a peritectic reaction of the Y.sub.2 BaCuO.sub.5 of the plate, with the liquid phase, BaCuO.sub.2.CuO, to form a YBa.sub.2 Cu.sub.3 O.sub.y phase, and cooling and annealing the resulting YBa.sub.2 Cu.sub.3 O.sub.y to gain superconducting properties, in which weak-links are reduced by the well oriented-grains with few voids, and the grains of the fine grained Y.sub.2 BaCuO.sub.5 phase act as flux pinning centers, which increases the critical current density.

Abstract translation: 一种制备钇基超导体的方法，其包括部分熔融YBa2Cu3Oy化合物的本体，其堆叠在Y2BaCuO5板上以产生液相，向下流入Y2BaCuO5板的BaCu2.CuO，板的Y2BaCuO5的包晶反应 用液相BaCuO2.CuO形成YBa2Cu3Oy相，冷却和退火所得的YBa2Cu3Oy以获得超导特性，其中弱连接通过很少空隙的良好取向的晶粒减少，并且 细粒度的Y2BaCuO5相作为磁通钉扎中心，增加临界电流密度。

公开(公告)号：US09891102B2

公开(公告)日：2018-02-13

申请号：US13545623

申请日：2012-07-10

Applicant: Young Kim ,  I-hun Song ,  Seung-eon Ahn ,  Sang-hun Jeon ,  Chang-jung Kim ,  Sung-ho Park

Inventor： Young Kim ,  I-hun Song ,  Seung-eon Ahn ,  Sang-hun Jeon ,  Chang-jung Kim ,  Sung-ho Park

IPC: G09G3/36 ,  G01J1/44 ,  H01L27/146 ,  G06F3/038 ,  G06F3/041 ,  G06F3/042 ,  H01L27/12 ,  H01L31/113 ,  H04N5/3745

CPC classification number: G01J1/44 ,  G06F3/0386 ,  G06F3/0412 ,  G06F3/042 ,  G09G3/3648 ,  H01L27/1225 ,  H01L27/14609 ,  H01L27/14681 ,  H01L31/1136 ,  H04N5/3745

Abstract: In a simplified light sensing circuit, a light sensing apparatus including the light sensing circuit, a method of driving the light sensing apparatus, and an image acquisition apparatus and optical touch screen apparatus including the light sensing apparatus, the light sensing circuit includes an oxide semiconductor transistor including a channel layer including an oxide semiconductor material, for each pixel. The oxide semiconductor transistor is configured to operate as a light sensing device that senses light and a switch that outputs light sensing data.

公开(公告)号：US09268428B2

公开(公告)日：2016-02-23

申请号：US13465249

申请日：2012-05-07

Applicant: Young Kim ,  I-hun Song ,  Sang-hun Jeon ,  Seung-eon Ahn ,  Joon-chul Goh ,  Cheol-gon Lee

Inventor： Young Kim ,  I-hun Song ,  Sang-hun Jeon ,  Seung-eon Ahn ,  Joon-chul Goh ,  Cheol-gon Lee

IPC: G06F3/041 ,  G06F3/042

CPC classification number: G06F3/0412 ,  G06F3/042

Abstract: A light-sensing apparatus in which a light sensor transistor in a light-sensing pixel is formed of an oxide semiconductor transistor for sensing light, a method of driving the light-sensing apparatus, and an optical touch screen apparatus including the light-sensing apparatus. The light-sensing apparatus includes a light-sensing pixel array having a plurality of light-sensing pixels arranged in rows and columns, and a plurality of gate lines which are arranged in a row direction and respectively provide a gate voltage to the light-sensing pixel. Each of the light-sensing pixels includes a light sensor transistor for sensing light and a switch transistor for outputting a light-sensing signal from the light sensor transistor, and gates of the light sensor transistors of the light-sensing pixels arranged in an arbitrary row are connected to a gate line arranged in a row previous or next to the arbitrary row.

Abstract translation: 一种光感测装置，其中光感测像素中的光传感器晶体管由用于感测光的氧化物半导体晶体管形成，驱动光感测装置的方法以及包括光感测装置的光学触摸屏装置 。 感光装置包括具有排列成行和列的多个感光像素的光感测像素阵列，以及沿行方向排列并分别向光感测提供栅极电压的多条栅极线 像素。 每个感光像素包括用于感测光的光传感器晶体管和用于输出来自光传感器晶体管的光感测信号的开关晶体管，以及布置在任意行中的感光像素的光传感器晶体管的栅极 连接到布置在任意行之前或之后的行中的栅极线。

公开(公告)号：US09048163B2

公开(公告)日：2015-06-02

申请号：US13404136

申请日：2012-02-24

Applicant: Sang-hun Jeon ,  I-hun Song ,  Seung-eon Ahn ,  Chang-jung Kim ,  Young Kim

Inventor： Sang-hun Jeon ,  I-hun Song ,  Seung-eon Ahn ,  Chang-jung Kim ,  Young Kim

IPC: H01L29/12 ,  H01L27/146

CPC classification number: H01L27/14692 ,  H01L27/14612

Abstract: A transistor may include an active layer having a plurality of oxide semiconductor layers and an insulating layer disposed therebetween. The insulating layer may include a material that has higher etch selectivity with respect to at least one of the plurality of oxide semiconductor layers. The electronic device may include a first transistor and a second transistor connected to the first transistor. The second transistor may include an active layer having a different structure from that of the active layer included in the first transistor. The active layer of the second transistor may have the same structure as one of the plurality of oxide semiconductor layers constituting the active layer of the first transistor.

Abstract translation: 晶体管可以包括具有多个氧化物半导体层的有源层和设置在其间的绝缘层。 绝缘层可以包括相对于多个氧化物半导体层中的至少一个具有较高蚀刻选择性的材料。 电子设备可以包括连接到第一晶体管的第一晶体管和第二晶体管。 第二晶体管可以包括具有与包括在第一晶体管中的有源层的结构不同的结构的有源层。 第二晶体管的有源层可以具有与构成第一晶体管的有源层的多个氧化物半导体层中的一个相同的结构。

公开(公告)号：US09035910B2

公开(公告)日：2015-05-19

申请号：US13434164

申请日：2012-03-29

Applicant: Sang-hun Jeon ,  I-hun Song ,  Seung-eon Ahn ,  Young Kim ,  Chang-jung Kim ,  Yong-woo Jeon

Inventor： Sang-hun Jeon ,  I-hun Song ,  Seung-eon Ahn ,  Young Kim ,  Chang-jung Kim ,  Yong-woo Jeon

IPC: G06F3/042 ,  G06F3/038 ,  H01L27/146

CPC classification number: G06F3/042 ,  G06F3/0386 ,  H01L27/14679

Abstract: Optical touch screen apparatuses with remote sensing and touch sensing by using a light sensor transistor including an oxide semiconductor transistor. The optical touch screen apparatus includes a pixel array of a plurality of sensing pixels arranged in a plurality of rows and a plurality of columns. Each of the sensing pixels includes a light sensing pixel for sensing light that is irradiated by an external light source and a touch sensing pixel for sensing display light that is reflected by a screen touch. The light sensing pixel includes a first light sensor transistor and a first switch transistor connected each other in series, and the touch sensing pixel includes a second light sensor transistor and a second switch transistor connected each other in series.

Abstract translation: 通过使用包括氧化物半导体晶体管的光传感器晶体管，具有遥感和触摸感测的光学触摸屏设备。 光学触摸屏装置包括排列成多行和多列的多个感测像素的像素阵列。 每个感测像素包括用于感测由外部光源照射的光的感光像素和用于感测被屏幕触摸反射的显示光的触摸感测像素。 感光像素包括串联连接的第一光传感器晶体管和第一开关晶体管，并且触摸感测像素包括彼此串联连接的第二光传感器晶体管和第二开关晶体管。

公开(公告)号：US08928627B2

公开(公告)日：2015-01-06

申请号：US13165194

申请日：2011-06-21

Applicant: Sang-hun Jeon ,  I-hun Song ,  Seung-eon Ahn ,  Chang-jung Kim

Inventor： Sang-hun Jeon ,  I-hun Song ,  Seung-eon Ahn ,  Chang-jung Kim

IPC: G06F3/042 ,  G06F3/041 ,  G06F3/038

CPC classification number: G06F3/0412 ,  G06F3/0386 ,  G06F3/042 ,  G06F2203/04103

Abstract: A light sensing circuit using an oxide semiconductor transistor, a method of manufacturing the light sensing circuit, and an optical touch panel including the light sensing circuit. Because the light sensing circuit includes only one light sensor transistor and one switch transistor formed on the same substrate, a structure of the light sensing circuit is simplified. Furthermore, because the light sensor transistor and the switch transistor have the same structure, a method of manufacturing the light sensing circuit is also simplified. Also, since an optical touch panel or an image acquisition apparatus using the light sensing circuit uses the light sensing circuit having a simple structure and does not use a capacitor, the optical touch panel or the image acquisition apparatus may be made thinner and larger.

Abstract translation: 使用氧化物半导体晶体管的光感测电路，制造光感测电路的方法以及包括光感测电路的光学触摸面板。 由于光感测电路仅在一个基板上形成一个光传感器晶体管和一个开关晶体管，因此简化了光感测电路的结构。 此外，由于光传感器晶体管和开关晶体管具有相同的结构，因此也简化了光感测电路的制造方法。 此外，由于使用光感测电路的光学触摸面板或图像获取装置使用具有简单结构的光感测电路并且不使用电容器，所以可以使光学触摸面板或图像采集装置变得越来越薄。