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公开(公告)号：US09362842B2
公开(公告)日：2016-06-07
申请号：US14364857
申请日：2012-11-06
Applicant: STMicroelectronics (Tours) SAS
Inventor： Benoit Renard , Laurent Gonthier
CPC classification number: H02M7/1555 , H02M7/06 , H02M7/217 , H03K17/567 , H05B39/08
Abstract: A control circuit varies the power of a load powered by an alternating voltage, comprising: a first thyristor and a first diode connected in antiparallel between first and second nodes, the cathode of the first diode being on the side of the first node; a second thyristor and a second diode connected in antiparallel between the second node and a third node, the cathode of the second diode being on the side of the third node; third and fourth diodes connected in antiseries between the first and third nodes, the cathodes of the third and fourth diodes being connected to a fourth node; a transistor between the second and fourth nodes; and a control unit for controlling the first and second thyristors and the transistor.
Abstract translation: 控制电路改变由交流电压供电的负载的功率，包括：第一晶闸管和连接在第一和第二节点之间的反平行的第一二极管，第一二极管的阴极位于第一节点的侧面; 在第二节点和第三节点之间反并联连接的第二晶闸管和第二二极管，第二二极管的阴极位于第三节点的一侧; 连接在第一和第三节点之间的反电容中的第三和第四二极管，第三和第四二极管的阴极连接到第四节点; 第二和第四节点之间的晶体管; 以及用于控制第一和第二晶闸管和晶体管的控制单元。
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公开(公告)号：US20160111969A1
公开(公告)日：2016-04-21
申请号：US14826627
申请日：2015-08-14
Applicant: STMicroelectronics (Tours) SAS
Inventor： Laurent Gonthier
CPC classification number: H02M7/06 , H02M1/081 , H02M7/155 , H02M7/1623
Abstract: A rectifying circuit includes a first diode coupled between a first terminal configured to receive application of an A.C. voltage and a first terminal configured to deliver a rectified voltage; and an anode-gate thyristor coupled between a second terminal configured to receive application of the A.C. voltage and a second terminal configured to deliver the rectified voltage, wherein an anode of the anode-gate thyristor is connected to the second terminal configured to deliver the rectified voltage.
Abstract translation: 整流电路包括耦合在被配置为接收交流电压的施加的第一端子和被配置为传送整流电压的第一端子之间的第一二极管; 以及耦合在被配置为接收所述AC电压的施加的第二端子和被配置为传送整流电压的第二端子之间的阳极栅极晶闸管，其中所述阳极栅极晶闸管的阳极连接到所述第二端子，所述第二端子被配置为传送整流的 电压。
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公开(公告)号：US09240766B2
公开(公告)日：2016-01-19
申请号：US14227532
申请日：2014-03-27
Applicant: STMicroelectronics (Tours) SAS
Inventor： Claire Laporte , Hilal Ezzeddine
CPC classification number: H03H7/468 , H01P5/18 , H03F3/195 , H03F3/24 , H03F3/245 , H03F2200/171 , H03F2200/204 , H03F2200/207 , H03F2200/414 , H04B2001/0408
Abstract: A coupling circuit, including: a coupler including a first conductive line and a second conductive line coupled to the first one; at each end of the second line of the coupler, a two-output signal splitter; and at each output of each splitter, a filtering function.
Abstract translation: 一种耦合电路，包括：耦合器，包括耦合到第一导线的第一导线和耦合到第一导线的第二导线; 在耦合器的第二线的每一端处有两个输出信号分离器; 并且在每个分离器的每个输出处，具有滤波功能。
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54.发明申请INCREASE OF EPITAXY RESISTIVITY AND DECREASE OF JUNCTION CAPACITANCE BY ADDITION OF PBURIED LAYER 有权外延电阻的增加和通过添加层的接合电容的降低公开(公告)号：US20150221628A1
公开(公告)日：2015-08-06
申请号：US14171931
申请日：2014-02-04
Applicant: STMicroelectronics (Tours) SAS
Inventor： Aurelie Arnaud
CPC classification number: H01L27/0248 , H01L27/0259 , H01L27/0814
Abstract: An overvoltage protection device including: a doped substrate of a first conductivity type having a first doping level, coated with a doped epitaxial layer of the second conductivity type having a second doping level; a first doped buried region of the second conductivity type having a third doping level greater than the second level, located at the interface between the substrate and the epitaxial layer in a first portion of the device; and a second doped buried region of the first conductivity type having a fourth doping level greater than the first level, located at the interface between the substrate and the epitaxial layer in a second portion of the device.
Abstract translation: 一种过电压保护装置，包括：具有第一掺杂水平的第一导电类型的掺杂衬底，涂覆有具有第二掺杂水平的第二导电类型的掺杂外延层; 所述第二导电类型的第一掺杂掩埋区具有大于所述第二电平的第三掺杂水平，位于所述器件的第一部分中的所述衬底和所述外延层之间的界面处; 以及第一导电类型的第二掺杂掩埋区，其具有大于所述第一电平的第四掺杂水平，位于所述器件的第二部分中的所述衬底和所述外延层之间的界面处。
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公开(公告)号：US09070738B2
公开(公告)日：2015-06-30
申请号：US14494692
申请日：2014-09-24
Applicant: STMicroelectronics (Tours) SAS
Inventor： Samuel Menard
IPC: H01L29/74 , H01L29/16 , H01L29/66 , H01L21/02 , H01L21/322 , H01L29/08 , H01L21/306
CPC classification number: H01L29/74 , H01L21/2807 , H01L21/306 , H01L29/0692 , H01L29/0834 , H01L29/0839 , H01L29/102 , H01L29/32 , H01L29/513 , H01L29/517 , H01L29/66363 , H01L29/66545 , H01L29/7408
Abstract: An SCR-type component of vertical structure has a main upper electrode formed on a silicon region of a first conductivity type which is formed in a silicon layer of a second conductivity type. The silicon region is interrupted in first areas where the material of the silicon layer comes into contact with the upper electrode, and is further interrupted in second areas filled with resistive porous silicon extending between the silicon layer and the main upper electrode.
Abstract translation: 垂直结构的SCR型分量具有形成在第二导电类型的硅层中的形成在第一导电类型的硅区上的主上电极。 在硅层的材料与上电极接触的第一区域中，硅区被中断，并且在硅层和主上电极之间延伸的第二区填充有电阻性多孔硅，进一步中断。
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Patent Agency Ranking
56.发明申请公开(公告)号：US20150137880A1
公开(公告)日：2015-05-21
申请号：US14548386
申请日：2014-11-20
Applicant: STMICROELECTRONICS (TOURS) SAS
Inventor： Bertrand RIVET , David JOUVE
CPC classification number: G05F1/613 , G05F1/468 , H03K17/102
Abstract: A circuit for balancing a voltage across a semiconductor element series-connected with other semiconductor elements of the same type may include a comparator configured to compare data representative of a voltage across the semiconductor element with a reference voltage, and a resistive element of adjustable value and configured to be controlled by the comparator.
Abstract translation: 用于平衡与相同类型的其它半导体元件串联连接的半导体元件上的电压的电路可以包括比较器，其被配置为将表示半导体元件两端的电压的参考电压与可调整值的电阻元件进行比较， 配置为由比较器控制。
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57.发明授权Dielectric thin film-forming composition, method of forming dielectric thin film and dielectric thin film formed by the method 有权介电薄膜形成组合物，通过该方法形成介电薄膜和介电薄膜的方法公开(公告)号：US09018118B2
公开(公告)日：2015-04-28
申请号：US13716544
申请日：2012-12-17
Inventor： Toshiaki Watanabe , Hideaki Sakurai , Nobuyuki Soyama , Guillaume Guegan
Abstract: A liquid composition is provided for forming a thin film in the form of a mixed composite metal oxide in which a composite oxide B containing copper (Cu) and a composite oxide C containing manganese (Mn) are mixed into a composite metal oxide A represented with the general formula: Ba1-xSrxTiyO3, wherein the molar ratio B/A of the composite oxide B to the composite metal oxide A is within the range of 0.002
Abstract translation: 提供一种液体组合物，用于形成混合复合金属氧化物形式的薄膜，其中将含有铜（Cu）和含有锰（Mn）的复合氧化物C的复合氧化物B混合到由 通式为Ba1-xSrxTiyO3，其中复合氧化物B与复合金属氧化物A的摩尔比B / A在0.002
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公开(公告)号：US08953290B2
公开(公告)日：2015-02-10
申请号：US13955112
申请日：2013-07-31
Applicant: STMicroelectronics (Tours) SAS
Inventor： Olivier Ory , Eric Laconde
CPC classification number: H01L23/62 , H01L27/0255 , H01L2924/0002 , H01L2924/00
Abstract: A device for protecting an integrated circuit against overvoltages, the device being formed inside and on top of a semiconductor substrate of a first conductivity type and including: a capacitor including a well of the second conductivity type penetrating into the substrate and trenches with insulated walls formed in the well and filled with a conductive material; and a zener diode formed by the junction between the substrate and the well.
Abstract translation: 一种用于保护集成电路免受过电压的装置，该装置形成在第一导电类型的半导体衬底的内部和顶部，并且包括：电容器，包括穿透到衬底中的第二导电类型的阱和形成有绝缘壁的沟槽 在井中充满导电材料; 以及由衬底和阱之间的接合部形成的齐纳二极管。
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59.发明申请METHOD OF ENCAPSULATING AN ELECTRICAL ENERGY ACCUMULATION COMPONENT AND BATTERY 审中-公开封装电力能量积累组件和电池的方法公开(公告)号：US20140370373A1
公开(公告)日：2014-12-18
申请号：US14475018
申请日：2014-09-02
Applicant: STMicroelectronics (Tours) SAS
Inventor： Patrick Hougron
CPC classification number: B29C45/14336 , B29D99/0053 , B29L2031/3468 , H01M2/0207 , H01M2/0212 , H01M2/0215 , H01M2/026 , H01M2/0267 , H01M2/027 , H01M2/0275 , H01M2/0277 , H01M2/0404 , H01M10/0404 , H01M10/0436 , H01M2220/30
Abstract: A method for encapsulating a device, such as an battery, having two opposite and parallel main faces and a peripheral edge, wherein one main face includes an electrical contact zone, includes the steps of retaining the device within an injection chamber of a mold and injecting encapsulation material into the injection chamber to overmold an encapsulation block on the device. The injection chamber is configured to hold a portion of the device, adjacent its peripheral edge, so as to center the device within the injection chamber. The mold includes centering structures that at least partially cover the electrical contact zone. Opposite positioning studs protrude into the injection chamber and bear on the opposite main faces of the device. The resulting packaged device includes an overmolded encapsulation block enveloping the device except for portions covered by the centering structure.
Abstract translation: 一种用于封装诸如电池的装置的方法，其具有两个相对并且平行的主面和周边边缘，其中一个主面包括电接触区，包括以下步骤：将所述装置保持在模具的注射室内并注射 封装材料进入注射室以覆盖设备上的封装块。 注射室被构造成保持装置的一部分邻近其周边边缘，以使装置在注射室内居中。 模具包括至少部分地覆盖电接触区域的定心结构。 相对的定位柱突出到注射室中，并承载在装置的相对的主面上。 所得到的封装装置包括包覆成型的封装块，其包围该装置，除了由对中结构覆盖的部分。
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公开(公告)号：US20140021872A1
公开(公告)日：2014-01-23
申请号：US14032561
申请日：2013-09-20
Applicant: STMicroelectronics (Tours) SAS
Inventor： Laurent Gonthier , Antoine Passal
IPC: H05B33/08
CPC classification number: H05B33/0818 , H05B33/0815 , H05B39/044 , Y02B20/19 , Y02B20/348
Abstract: A circuit capable of receiving, in series with at least one light-emitting diode, a rectified A.C. voltage, comprising: a first gate turn-off thyristor connected to first and second terminals of the circuit; and a control circuit for turning off the first thyristor when the voltage between the first and second terminals exceeds a threshold.
Abstract translation: 一种能够与至少一个发光二极管串联接收整流的交流电压的电路，包括：连接到电路的第一和第二端子的第一栅极截止晶闸管; 以及用于当第一和第二端子之间的电压超过阈值时关闭第一晶闸管的控制电路。
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