公开(公告)号：US20220108917A1

公开(公告)日：2022-04-07

申请号：US17487123

申请日：2021-09-28

Applicant: Applied Materials, Inc.

Inventor： Roey Shaviv ,  Suketu Arun Parikh ,  Feng Chen ,  Lu Chen

IPC: H01L21/768 ,  H01L21/02

Abstract: Provided are methods of forming vias with decreased resistance by selectively depositing a barrier layer on an insulating layer and not on a metallic surface. Some embodiments of the disclosure utilize a planar hydrocarbon to form a blocking layer on metallic surfaces. Deposition is performed to selectively deposit on the unblocked insulating surfaces.

公开(公告)号：US11047039B2

公开(公告)日：2021-06-29

申请号：US16232496

申请日：2018-12-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Alexander Lerner ,  Kim Vellore ,  Ami Sade ,  Steven Sansoni ,  Andrew Constant ,  Kevin Moraes ,  Roey Shaviv ,  Niranjan Kumar ,  Jeffrey Brodine ,  Michael Karazim

IPC: C23C14/50 ,  C23C14/04 ,  C23C14/24

Abstract: Substrate carrier apparatus having a hard mask are disclosed herein. In some embodiments, a substrate carrier apparatus includes a carrier body having a support surface to support a substrate; and a mask assembly disposed above the support surface. The mask assembly includes an annular frame disposed atop the support surface; and a hard mask coupled to and disposed within the annular frame above the support surface, wherein the hard mask includes one or more openings arranged in a predetermined pattern and disposed through the hard mask, and wherein the hard mask includes a plurality of spacer elements extending from a bottom surface of the hard mask.

公开(公告)号：US10950500B2

公开(公告)日：2021-03-16

申请号：US15971573

申请日：2018-05-04

Applicant: APPLIED MATERIALS, INC.

Inventor： Roey Shaviv ,  Xikun Wang ,  Ismail Emesh ,  Jianxin Lei ,  Wenting Hou

IPC: H01L21/768 ,  H01L21/67 ,  H01L21/285 ,  H01L21/3213 ,  H01L21/02 ,  H01L23/532

Abstract: Embodiments of methods and apparatus for filling a feature disposed in a substrate are disclosed herein. In some embodiments, a method for filling a feature disposed in a substrate includes (a) depositing a metal within the feature to a first predetermined thickness in a first process chamber; (b) depositing the metal within the feature to a second predetermined thickness in a second process chamber; (c) etching the metal deposited in (b) to remove an overhang of the metal at a top of the feature in a third process chamber different than the first and second process chambers; and (d) subsequent to (c), filling the feature with the metal in a fourth process chamber different than the first and third process chambers.

公开(公告)号：US20180323103A1

公开(公告)日：2018-11-08

申请号：US15971573

申请日：2018-05-04

Applicant: APPLIED MATERIALS, INC.

Inventor： Roey Shaviv ,  Xikun Wang ,  Ismail Emesh ,  Jianxin Lei ,  Wenting Hou

IPC: H01L21/768 ,  H01L21/285 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/76883 ,  H01L21/02068 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/32135 ,  H01L21/67207 ,  H01L21/76843 ,  H01L21/76895

Abstract: Embodiments of methods and apparatus for filling a feature disposed in a substrate are disclosed herein. In some embodiments, a method for filling a feature disposed in a substrate includes (a) depositing a metal within the feature to a first predetermined thickness in a first process chamber; (b) depositing the metal within the feature to a second predetermined thickness in a second process chamber; (c) etching the metal deposited in (b) to remove an overhang of the metal at a top of the feature in a third process chamber different than the first and second process chambers; and (d) subsequent to (c), filling the feature with the metal in a fourth process chamber different than the first and third process chambers.

公开(公告)号：US10062607B2

公开(公告)日：2018-08-28

申请号：US15243600

申请日：2016-08-22

Applicant: APPLIED Materials, Inc.

Inventor： Ismail T. Emesh ,  Roey Shaviv ,  Mehul Naik

IPC: H01L21/76 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L21/76879 ,  H01L21/76849 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76882 ,  H01L21/76883 ,  H01L23/53209 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming metallization in a workpiece includes electrochemically depositing a second metallization layer on the workpiece comprising a nonmetallic substrate having a dielectric layer disposed over a substrate and a continuous first metallization layer disposed on the dielectric layer and having at least one microfeature comprising a recessed structure, wherein the first metallization layer at least partially fills a feature on the workpiece, where the first metallization layer is a cobalt or nickel metal layer, and wherein the second metallization layer is a cobalt or nickel metal layer that is different from the metal of the first metallization layer, electrochemically depositing a copper cap layer after filling the feature, and annealing the workpiece to diffuse the metal of the second metallization layer into the metal of the first metallization layer.

公开(公告)号：US09840788B2

公开(公告)日：2017-12-12

申请号：US14637290

申请日：2015-03-03

Applicant: APPLIED Materials, Inc.

Inventor： Roey Shaviv ,  Ismail T. Emesh ,  Dimitrios Argyris ,  Serdar Aksu

IPC: H01L21/288 ,  C25D3/38 ,  C25D7/12 ,  H01L21/768 ,  H01L23/532 ,  H01L23/528 ,  C25D3/02

CPC classification number: C25D7/123 ,  C25D3/02 ,  C25D3/38 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76882 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In accordance with one embodiment of the present disclosure, a method for depositing metal on a reactive metal film on a workpiece includes electrochemically depositing a metallization layer on a seed layer formed on a workpiece using a plating electrolyte having at least one plating metal ion, a pH range of about 6 to about 11 and applying a cathodic potential in the range of about −1 V to about −6 V. The workpiece includes a barrier layer disposed between the seed layer and a dielectric surface of the workpiece, the barrier layer including a first metal having a standard electrode potential more negative than 0 V and the seed layer including a second metal having a standard electrode potential more positive than 0 V.

公开(公告)号：US20170047249A1

公开(公告)日：2017-02-16

申请号：US15243600

申请日：2016-08-22

Applicant: APPLIED Materials, Inc.

Inventor： Ismail T. Emesh ,  Roey Shaviv ,  Mehul Naik

IPC: H01L21/768

CPC classification number: H01L21/76879 ,  H01L21/76849 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76882 ,  H01L21/76883 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming metallization in a workpiece includes electrochemically depositing a second metallization layer on the workpiece comprising a nonmetallic substrate having a dielectric layer disposed over a substrate and a continuous first metallization layer disposed on the dielectric layer and having at least one microfeature comprising a recessed structure, wherein the first metallization layer at least partially fills a feature on the workpiece, where the first metallization layer is a cobalt or nickel metal layer, and wherein the second metallization layer is a cobalt or nickel metal layer that is different from the metal of the first metallization layer, electrochemically depositing a copper cap layer after filling the feature, and annealing the workpiece to diffuse the metal of the second metallization layer into the metal of the first metallization layer.

Abstract translation: 用于在工件中形成金属化的方法包括在工件上电化学沉积第二金属化层，该第二金属化层包括非金属基底，该非金属基底具有设置在基底上的电介质层和设置在电介质层上的连续的第一金属化层，并且具有至少一个微特征， 其中所述第一金属化层至少部分地填充所述工件上的特征，其中所述第一金属化层是钴或镍金属层，并且其中所述第二金属化层是钴或镍金属层，其不同于 所述第一金属化层在填充所述特征之后电化学沉积铜覆盖层，并且退火所述工件以将所述第二金属化层的金属扩散到所述第一金属化层的金属中。

公开(公告)号：US20160309596A1

公开(公告)日：2016-10-20

申请号：US14687755

申请日：2015-04-15

Applicant: APPLIED Materials, Inc.

Inventor： Roey Shaviv ,  John W. Lam ,  Timothy Bochman ,  Jennifer Meng Chu Tseng

IPC: H05K3/18 ,  C25D5/34 ,  C21D1/26 ,  C25D3/12 ,  C22F1/10 ,  C21D9/00 ,  C25D7/12 ,  C25D5/50

CPC classification number: C21D1/26 ,  C21D9/0062 ,  C22F1/10 ,  C23C18/1653 ,  C25D3/12 ,  C25D3/38 ,  C25D5/10 ,  C25D5/34 ,  C25D5/50 ,  C25D7/123 ,  C25D17/005 ,  H01L21/2885 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76882 ,  H01L21/76883 ,  H01L23/52 ,  H01L23/53209 ,  H01L23/53238

Abstract: A method for depositing metal in a feature on a workpiece includes forming a seed layer in a feature on a workpiece, wherein the seed layer includes a metal selected from the group consisting of cobalt and nickel; electrochemically depositing a first metallization layer on the seed layer, wherein electrochemically depositing the metallization layer includes using a plating electrolyte having a plating metal ion and a pH in the range of 6 to 13; and heat treating the workpiece after deposition of the first metallization layer.

Abstract translation: 用于在工件中的特征中沉积金属的方法包括在工件上的特征中形成晶种层，其中种子层包括选自钴和镍的金属; 在种子层上电化学沉积第一金属化层，其中电化学沉积金属化层包括使用具有电镀金属离子和pH在6至13范围内的电镀电解质; 以及在沉积第一金属化层之后对工件进行热处理。

公开(公告)号：US20160237587A1

公开(公告)日：2016-08-18

申请号：US14621155

申请日：2015-02-12

Applicant: APPLIED Materials, Inc.

Inventor： Roey Shaviv ,  John Lam ,  Timothy Bochman

IPC: C25D17/00 ,  H01L21/677 ,  C25D17/28 ,  C25D7/12 ,  C25D3/12

CPC classification number: C25D17/001 ,  C25D3/12 ,  C25D5/10 ,  C25D5/18 ,  C25D5/50 ,  C25D7/123 ,  H01L21/02074 ,  H01L21/6723 ,  H01L21/67276 ,  H01L21/67769

Abstract: A wafer electroplating system has at least one first electroplating chamber having a first electrolyte containing cobalt ions, and is adapted to electroplate a cobalt film onto a wafer at a first deposition rate. A second electroplating chamber has a second electrolyte containing cobalt ions, and is adapted to electroplate a cobalt film onto the wafer at a second deposition rate faster than the first deposition rate. The first and second electroplating chambers are within an enclosure of a processing system. A robot moves a wafer among the first and second electroplating chambers.

Abstract translation: 晶片电镀系统具有至少一个第一电镀室，其具有含有钴离子的第一电解质，并且适于以第一沉积速率将钴膜电镀到晶片上。 第二电镀室具有包含钴离子的第二电解质，并且适于以比第一沉积速率更快的第二沉积速率将钴膜电镀到晶片上。 第一和第二电镀室位于处理系统的外壳内。 机器人在第一和第二电镀室之间移动晶片。

公开(公告)号：US20160208402A1

公开(公告)日：2016-07-21

申请号：US14601989

申请日：2015-01-21

Applicant: APPLIED Materials, Inc.

Inventor： Paul R. McHugh ,  Gregory J. Wilson ,  Roey Shaviv

IPC: C25D5/00

CPC classification number: C25D17/008 ,  C25D5/00 ,  C25D17/001 ,  C25D17/007 ,  C25D17/12

Abstract: An electroplating apparatus has one or more membrane tube rings which act as electric field shields, to provide advantageous plating characteristics at the perimeter of a work piece. The membrane tube rings may be filled with fluids having different conductivity, to change the shielding effect as desired for electroplating different types of substrates. The membrane tube rings may optionally be provided in or on a diffuser plate in the vessel of the apparatus.

Abstract translation: 电镀设备具有一个或多个膜管环，其作为电场屏蔽，以在工件的周边提供有利的电镀特性。 膜管环可以填充具有不同导电性的流体，以根据需要改变电镀不同类型的基底的屏蔽效果。 膜管环可以可选地设置在装置的容器中的扩散器板中或其上。