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    Semiconductor light emitting device and fabrication method thereof
    51.
    发明授权
    Semiconductor light emitting device and fabrication method thereof 有权
    半导体发光器件及其制造方法

    公开(公告)号：US07030417B2

    公开(公告)日：2006-04-18

    申请号：US10633040

    申请日：2003-08-04

    申请人： Akihiko Ishibashi ,  Toshiya Yokogawa ,  Kiyoshi Ohnaka ,  Susumu Koike

    发明人： Akihiko Ishibashi ,  Toshiya Yokogawa ,  Kiyoshi Ohnaka ,  Susumu Koike

    IPC分类号： H01L21/00

    CPC分类号： H01L33/32 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/10 ,  H01L33/46 ,  H01L2224/48463 ,  H01L2224/49107

    摘要： The present invention relates to a semiconductor light emitting device comprising a sapphire substrate 11; a u-GaN layer 12 that is formed on top of the substrate 11 and that comprises a plurality of concave portions 121 formed into band-like shapes with predetermined intervals therebetween; a regrown u-GaN layer 13 formed on the u-Ga layer 12; a layered structure that is formed on the u-GaN layer 13 comprises an n-GaN layer 15, an active layer 16, and a p-GaN layer 19; an n-type electrode 24 formed on the n-GaN layer 15 exposed by removing a potion of the layered structure; and a transparent p-type electrode 20 formed on the p-GaN layer 19, wherein the p-type electrode 20 is an emission detection surface, and an air layer S is formed between the bottom surface of the u-GaN layer 13 and the concave portions 121.

    摘要翻译： 本发明涉及一种包括蓝宝石衬底11的半导体发光器件; 形成在基板11的顶部并且包括多个形成为具有预定间隔的带状形状的凹部121的u-GaN层12; 形成在u-Ga层12上的再生U-GaN层13; 形成在u-GaN层13上的分层结构包括n-GaN层15，有源层16和p-GaN层19; 形成在n-GaN层15上的n型电极24通过去除层状结构的一部分而暴露; 以及形成在p-GaN层19上的透明p型电极20，其中p型电极20是发射检测表面，并且在u-GaN层13的底表面和 凹部121。

    Nitride semiconductor light-emitting device
    54.
    发明授权
    Nitride semiconductor light-emitting device 有权
    氮化物半导体发光器件

    公开(公告)号：US07852891B2

    公开(公告)日：2010-12-14

    申请号：US12258881

    申请日：2008-10-27

    申请人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Akihiko Ishibashi

    发明人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Akihiko Ishibashi

    IPC分类号： H01S5/00

    CPC分类号： B82Y20/00 ,  H01S5/0425 ,  H01S5/2004 ,  H01S5/22 ,  H01S5/2205 ,  H01S5/34333 ,  H01S2301/173

    摘要： A nitride semiconductor light-emitting device is provided including: a substrate made of a nitride semiconductor; a semiconductor layer made of a nitride semiconductor containing a p-type impurity, the semiconductor layer being formed as contacting an upper surface of the substrate; a first cladding layer made of a nitride semiconductor containing an impurity of a first conductivity type, the first cladding layer being formed on the semiconductor layer; an active layer formed on the first cladding layer; and a second cladding layer made of a nitride semiconductor containing an impurity of a second conductivity type, the second cladding layer being formed on the active layer.

    摘要翻译： 提供了一种氮化物半导体发光器件，包括：由氮化物半导体制成的衬底; 由包含p型杂质的氮化物半导体制成的半导体层，所述半导体层形成为与所述衬底的上表面接触; 由包含第一导电类型的杂质的氮化物半导体制成的第一包层，所述第一包层形成在所述半导体层上; 形成在所述第一包层上的有源层; 以及由包含第二导电类型的杂质的氮化物半导体制成的第二覆层，所述第二覆层形成在所述有源层上。

    Nitride semiconductor light-emitting device
    56.
    发明授权
    Nitride semiconductor light-emitting device 有权
    氮化物半导体发光器件

    公开(公告)号：US07501667B2

    公开(公告)日：2009-03-10

    申请号：US11084526

    申请日：2005-03-21

    申请人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Akihiko Ishibashi

    发明人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Akihiko Ishibashi

    IPC分类号： H01L33/00

    CPC分类号： B82Y20/00 ,  H01S5/0425 ,  H01S5/2004 ,  H01S5/22 ,  H01S5/2205 ,  H01S5/34333 ,  H01S2301/173

    摘要： A nitride semiconductor light-emitting device is provided including: a substrate made of a nitride semiconductor; a semiconductor layer made of a nitride semiconductor containing a p-type impurity, the semiconductor layer being formed as contacting an upper surface of the substrate; a first cladding layer made of a nitride semiconductor containing an impurity of a first conductivity type, the first cladding layer being formed on the semiconductor layer; an active layer formed on the first cladding layer; and a second cladding layer made of a nitride semiconductor containing an impurity of a second conductivity type, the second cladding layer being formed on the active layer.

    摘要翻译： 提供了一种氮化物半导体发光器件，包括：由氮化物半导体制成的衬底; 由包含p型杂质的氮化物半导体制成的半导体层，所述半导体层形成为与所述衬底的上表面接触; 由包含第一导电类型的杂质的氮化物半导体制成的第一包层，所述第一包层形成在所述半导体层上; 形成在所述第一包层上的有源层; 以及由包含第二导电类型的杂质的氮化物半导体制成的第二覆层，所述第二覆层形成在所述有源层上。

    Semiconductor light emitting device and fabrication method thereof
    58.
    发明申请
    Semiconductor light emitting device and fabrication method thereof 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20060145165A1

    公开(公告)日：2006-07-06

    申请号：US11359480

    申请日：2006-02-23

    申请人： Akihiko Ishibashi ,  Toshiya Yokogawa ,  Kiyoshi Ohnaka ,  Susumu Koike

    发明人： Akihiko Ishibashi ,  Toshiya Yokogawa ,  Kiyoshi Ohnaka ,  Susumu Koike

    IPC分类号： H01L33/00

    CPC分类号： H01L33/32 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/10 ,  H01L33/46 ,  H01L2224/48463 ,  H01L2224/49107

    摘要： The present invention relates to a semiconductor light emitting device comprising a sapphire substrate 11; a u-GaN layer 12 that is formed on top of the substrate 11 and that comprises a plurality of concave portions 121 formed into band-like shapes with predetermined intervals therebetween; a regrown u-GaN layer 13 formed on the u-Ga layer 12; a layered structure that is formed on the u-GaN layer 13 comprises an n-GaN layer 15, an active layer 16, and a p-GaN layer 19; an n-type electrode 24 formed on the n-GaN layer 15 exposed by removing a potion of the layered structure; and a transparent p-type electrode 20 formed on the p-GaN layer 19, wherein the p-type electrode 20 is an emission detection surface, and an air layer S is formed between the bottom surface of the u-GaN layer 13 and the concave portions 121.

    摘要翻译： 本发明涉及一种包括蓝宝石衬底11的半导体发光器件; 形成在基板11的顶部并且包括多个形成为具有预定间隔的带状形状的凹部121的u-GaN层12; 形成在u-Ga层12上的再生U-GaN层13; 形成在u-GaN层13上的分层结构包括n-GaN层15，有源层16和p-GaN层19; 形成在n-GaN层15上的n型电极24通过去除层状结构的一部分而暴露; 以及形成在p-GaN层19上的透明p型电极20，其中p型电极20是发射检测表面，并且在u-GaN层13的底表面和 凹部121。

    Television receiver
    59.
    发明申请
    Television receiver 有权
    电视接收机

    公开(公告)号：US20060066757A1

    公开(公告)日：2006-03-30

    申请号：US11235094

    申请日：2005-09-27

    申请人： Takehiko Numata ,  Shigero Kamise ,  Akihiko Ishibashi

    发明人： Takehiko Numata ,  Shigero Kamise ,  Akihiko Ishibashi

    IPC分类号： H04N3/24 ,  H04N5/63

    CPC分类号： H04N5/60 ,  H04N5/63 ,  H04N21/4436

    摘要： When the main power supply is turned off, the power supply of a video display unit is turned off and the audio signal is muted. At the same time, a time counting unit counts time, and before reaching a predetermined time, a display unit is lighted to notify a quick restart period. In the case where the main power supply is turned on during the predetermined time, the power supply of the video display unit is turned on to cancel the audio mute mode. In the case where the main power is not turned on upon lapse of the predetermined time, the power supply of the receiving unit is also turned off.

    摘要翻译： 当主电源关闭时，视频显示单元的电源关闭，音频信号静音。 同时，时间计数单元计数时间，并且在达到预定时间之前，点亮显示单元以通知快速重启周期。 在预定时间内主电源接通的情况下，视频显示单元的电源被接通以取消音频静音模式。 在经过预定时间后主电源未接通的情况下，接收单元的电源也被切断。

    Method of producing GaN-based semiconductor laser device and semiconductor substrate used therefor
    60.
    发明授权
    Method of producing GaN-based semiconductor laser device and semiconductor substrate used therefor 失效
    制造GaN基半导体激光器件的方法和用于其的半导体衬底

    公开(公告)号：US06855571B1

    公开(公告)日：2005-02-15

    申请号：US10366722

    申请日：2003-02-14

    申请人： Gaku Sugahara ,  Atsushi Yamada ,  Akihiko Ishibashi ,  Toshiya Yokogawa

    发明人： Gaku Sugahara ,  Atsushi Yamada ,  Akihiko Ishibashi ,  Toshiya Yokogawa

    IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L33/00 ,  H01S5/02 ,  H01S5/22 ,  H01S5/223 ,  H01S5/343

    CPC分类号： B82Y20/00 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/005 ,  H01S5/0213 ,  H01S5/0655 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2304/00 ,  H01S2304/12

    摘要： The present invention provides a method for fabricating a GaN-based semiconductor laser device comprising the steps of forming a GaN-based semiconductor layer 102 on a substrate 101; forming, on the surface of the first GaN-based semiconductor layer, a mask layer 103 that comprises a striped pattern composed of a plurality of band-like portions 103a that are regularly arranged in the width direction and an alignment pattern formed by altering the regularity of some portion of the plurality of band-like portions 103a; depositing a second GaN-based semiconductor layer 104 on the mask layer 103 by the selective lateral growth method with starting points at portions of the first GaN-based semiconductor layer 104 that are exposed from the mask layer 103; forming a multi-layered semiconductor that comprises an n-type GaN-based semiconductor layers 105 to 107, an active layer 108, and a p-type GaN-based semiconductor layers 109 to 111 on the second GaN-based semiconductor layer 104; and forming a current injection region 112 directly above the band-like portion 103a while using the alignment pattern as a reference to position the current injection region.

    摘要翻译： 本发明提供一种制造GaN基半导体激光器件的方法，包括以下步骤：在衬底101上形成GaN基半导体层102; 在第一GaN基半导体层的表面上形成掩模层103，掩模层103包括由在宽度方向上规则排列的多个带状部分103a组成的条纹图案和通过改变规则性而形成的取向图案 多个带状部分103a的一些部分; 通过选择性横向生长方法在从掩模层103暴露的第一GaN基半导体层104的部分处的起始点，在掩模层103上沉积第二GaN基半导体层104; 形成包含在第二GaN基半导体层104上的n型GaN基半导体层105至107，有源层108和p型GaN基半导体层109至111的多层半导体; 并且在使用对准图案作为基准的同时，在带状部分103a的正上方形成电流注入区域112来定位电流注入区域。