摘要:
A warning against the possible failure is accurately sent from the magnetic disk device to a host device. In one embodiment, error indices per unit time are stored discontinuously/continuously for each magnetic head, and if the new index (partial integral error rate) updated with the stored multiple error indices as the items to be monitored satisfies required conditions, this state is diagnosed as an abnormality or a pseudo-abnormality, and reported to the host device. The partial integral error rate is updated with an increase in the number of sets of error indices. Each time a new set of error indices per unit time are stored, the oldest of the existing error indices to be monitored is discarded and one of the new error indexes is added. In this way, a new partial integral error rate is calculated from the fixed number of new sets of error indices to be monitored. When the partial integral error rate increases above a second required threshold, this state is reported as an abnormality to the host device since a failure is most likely to occur in the magnetic disk device.
摘要:
A seed layer as a laminate of a GaN layer (second seed layer) and an AlN buffer layer (first seed layer) is formed on a sapphire substrate. A front surface thereof is etched in the form of stripes with a stripe width (seed width) of about 5 μm, a wing width of about 15 μm and a depth of about 0.5 μm. As a result, mesa portions each shaped like nearly a rectangle in sectional view are formed. Non-etched portions each having the seed multilayer as its flat top portion are arranged at arrangement intervals of L≈20 μm. Part of the sapphire substrate is exposed in trough portions of wings. The ratio S/W of the seed width to the wing width is preferably selected to be in a range of from about ⅓ to about ⅕. Then, a semiconductor crystal A is grown to obtain a thickness of not smaller than 50 μm. The semiconductor crystal is separated from the starting substrate to thereby obtain a high-quality single crystal independent of the starting substrate. When a halide vapor phase epitaxy method is used in the condition that the V/III ratio is selected to be in a range of from 30 to 80, both inclusively, a semiconductor crystal free from cracks can be obtained.
摘要:
Heretofore, when an error occurs during data reproduction, a retry is repeated until the error is corrected, which leaves a possibility of data transfer being not completed within a specified time. Only one piece of error information on uncorrected errors is informed to a host system even if the errors have occurred in a plurality of unit data. To solve the problem, a magnetic disk drive is provided which can transfer data within a specified time because the number of retries executed when errors occur is limited to a range that data transfer can be finished within a specified time. The disk drive generates error information regarding all errors caused in reproduction and communicates error information along with reproduced data to a host system. The disk drive is capable of concurrent execution of data processing that allows of errors and data processing that does not allow of errors without demanding that the disk drive be furnished with high performance.
摘要:
Embodiments of the invention provide an external storage system having a plurality of magnetic disk units which include a history storing device that automatically stores update information about the magnetic disk units as a history, and that can perform data recovery with a high degree of accuracy whenever a failure occurs. In one embodiment, an external storage system comprises a plurality of magnetic disk units being connected to one another according to a fiber channel protocol. At least one of the plurality of magnetic disk units is a history storing device that monitors each frame being transmitted to the plurality of magnetic disk units, and has an update history storing mode in which update history information is automatically obtained and stored in a storage medium of the history storing device.
摘要:
By using a mask 4, a first Group III nitride compound semiconductor layer 31 is etched, to thereby form an island-like structure such as a dot-like, striped-shaped, or grid-like structure, so as to provide a trench/post. Thus, without removing the mask 4 formed on a top surface of the upper layer of the post, a second Group III nitride compound layer 32 can be epitaxially grown, vertically and laterally, with a sidewall/sidewalls of the trench serving as a nucleus, to thereby bury the trench and also grow the layer in the vertical direction. The second Group III nitride compound layer 32 does not grow epitaxially on the mask 4. In this case, propagation of threading dislocations contained in the first Group III nitride compound semiconductor layer 31 can be prevented in the upper portion of the second Group III nitride compound semiconductor 32 that is formed through lateral epitaxial growth and a region having less threading dislocations can be formed in the buried portion of the trench.
摘要:
Retrying processing in access of data having different properties required such as reliability and real time property of the access is optimized. In a magnetic disk apparatus connected to a host computer 10 through a connection interface and including a magnetic disk controller and a magnetic disk, the magnetic disk controller includes a retrying table in which an area address, an area size, a retrying limit value and the like are set for each of a plurality of storage areas A, B and the like of the magnetic disk and the retrying limit value set in the retrying table from the host computer is used to optimize the retrying processing for data having different reliability or real time property of access such as management data and image/audio data stored in each of the storage areas A, B and the like individually.
摘要:
A magnetic disk recording and reproducing apparatus comprising a unit for inserting an error correcting code related to control information into said control information on data; a recording control unit for recording in a plurality of sectors formed by dividing the recording area of a magnetic disk, each sector having an ID area for recording said control information and a data area, provided adjacent to and behind said ID area, for recording said data; and a error correcting unit for correcting said control information of said ID area by said error correcting code before data is read from said data area corresponding to said ID area or data is recorded in said data area corresponding to said ID area.
摘要:
An optical scanning apparatus is constructed to detect one or more defective or damaged light emitting devices of a light source unit and forms images having substantially the same quality as that of the images formed when all of a plurality of light emitting devices of a light source of the apparatus are functioning normally even when any one of the plurality of light emitting devices are damaged or broken, without decreasing the image forming performance of the apparatus. The optical scanning apparatus detects one or more damaged or broken light emitting devices and then compensates for the light omitted due to the damaged or broken light emitting devices using the normally functioning light emitting devices without decreasing the image forming speed or quality of the optical scanning apparatus. In order to compensate for a defective light emitting device, the optical scanning apparatus uses various solutions such as increasing the rotating speed of the deflector while increasing the modulation speed of the light emitting devices by the same amount, increasing beam spot diameter in the subscanning direction, changing the output power of the light emitting devices on a surface to be scanned in order to increase beam spot diameter in the main scanning direction and the subscanning direction, and changing the focal length of the line image forming optical apparatus and increasing either the rotation speed of the deflector or the rotation speed of the surface to be scanned or photoconductive drum.
摘要:
The present invention provides a method for plasma control, in which an electric field is generated in the direction perpendicular to the surface of an object to be processed in plasma atmosphere generated in a processing chamber and another electric field is generated in the direction parallel to the surface, and the direction of ion or electron in plasma atmosphere is controlled by controlling the composite electric field composed of both the electric fields. The invention provides also an apparatus for plasma control provided with a perpendicular electric field generating means for generating an electric field in the direction perpendicular to the surface of the object, and a parallel electric field generating means for generating an electric field in the direction parallel to the surface of the object.