公开(公告)号：US20050221626A1

公开(公告)日：2005-10-06

申请号：US11020422

申请日：2004-12-21

Applicant: Chung Lee ,  Atul Kumar

Inventor： Chung Lee ,  Atul Kumar

IPC: B05D3/02 ,  B05D7/24 ,  B29C71/02 ,  C08G61/02 ,  C08J5/18 ,  H01L21/312 ,  H01L21/469 ,  H01L21/31

CPC classification number: B05D1/60 ,  B05D3/0254 ,  B29C71/02 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  H01L21/0212 ,  H01L21/02271 ,  H01L21/31058 ,  H01L21/3127 ,  Y10T428/269 ,  Y10T428/3154 ,  Y10T428/31544 ,  Y10T428/31855

Abstract: A method of stabilizing a poly(paraxylylene) dielectric thin film after forming the dielectric thin film via transport polymerization is disclosed, wherein the method includes annealing the dielectric thin film under at least one of a reductive atmosphere and a vacuum at a temperature above a reversible solid phase transition temperature of the dielectric film to convert the film from a lower temperature phase to a higher temperature phase, and cooling the dielectric thin film at a sufficient rate to a temperature below the solid phase transition temperature of the dielectric thin film to trap substantial portions of the film in the higher temperature phase.

Abstract translation: 公开了一种在通过传输聚合形成电介质薄膜之后稳定聚（对二甲苯）电介质薄膜的方法，其中该方法包括在至少一种还原性气氛和真空中在高于可逆的温度下退火介电薄膜 电介质膜的固相转变温度，以将膜从较低温度相转变为较高温度相，并将电介质薄膜以足够的速率冷却至低于介电薄膜的固相转变温度的温度，以捕获相当大的 在较高温度阶段的薄膜部分。

公开(公告)号：US20050218481A1

公开(公告)日：2005-10-06

申请号：US10816205

申请日：2004-03-31

Applicant: Chung Lee ,  Atul Kumar

Inventor： Chung Lee ,  Atul Kumar

IPC: H01L21/4763 ,  H01L23/58

CPC classification number: H01L21/3122 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02263 ,  H01L21/02348 ,  H01L21/3127

Abstract: An integrated circuit including a composite polymer dielectric layer formed on a substrate is disclosed, wherein the composite polymer dielectric layer includes a first silane-containing layer formed on the substrate, wherein the first silane-containing layer is formed at least partially from an organosilane material, a polymer dielectric layer formed on the first silane-containing layer, and a second silane-containing layer formed on the polymer dielectric layer. In some embodiments, the first silane-containing layer and second silane-containing layer may be formed from organosilane materials having at least one unsaturated bond capable of free radical polymerization. Systems and methods for making the disclosed integrated circuits are also provided.

Abstract translation: 公开了一种集成电路，其包括在基板上形成的复合聚合物电介质层，其中所述复合聚合物电介质层包括在所述基板上形成的第一含硅烷层，其中所述第一含硅烷层至少部分地由有机硅烷材料形成 ，形成在第一含硅烷层上的聚合物电介质层和形成在聚合物电介质层上的第二含硅烷层。 在一些实施方案中，第一含硅烷层和第二含硅烷层可以由具有至少一个能够进行自由基聚合的不饱和键的有机硅烷材料形成。 还提供了用于制造所公开的集成电路的系统和方法。

公开(公告)号：US20050174045A1

公开(公告)日：2005-08-11

申请号：US11071764

申请日：2005-03-02

Applicant: Chung Lee ,  Atul Kumar ,  Chieh Chen ,  Yuri Pikovsky

Inventor： Chung Lee ,  Atul Kumar ,  Chieh Chen ,  Yuri Pikovsky

IPC: B05D3/02 ,  B05D7/24 ,  B29C71/02 ,  C08G61/02 ,  C08J5/18 ,  H01L21/312 ,  H01J1/62

CPC classification number: B29C71/02 ,  B05D1/60 ,  B05D3/0254 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  H01L21/0212 ,  H01L21/3127

Abstract: An organic light-emitting display is disclosed, wherein the organic light-emitting display includes a thin film transistor portion including an array of thin film transistors, and a light-emitting portion including an array of organic light-emitting elements in electrical communication with the array of thin film transistors, wherein the light-emitting portion is formed from a plurality of layers of materials, and wherein the plurality of layers of materials in the light-emitting portion includes a plurality of passive polymer layers each formed from a single polymer material. Systems and methods for forming organic light-emitting displays are also disclosed.

Abstract translation: 公开了一种有机发光显示器，其中所述有机发光显示器包括薄膜晶体管部分，所述薄膜晶体管部分包括薄膜晶体管阵列，以及发光部分，包括与所述有机发光元件电连通的有机发光元件阵列 薄膜晶体管阵列，其中所述发光部分由多层材料形成，并且其中所述发光部分中的所述多个材料层包括多个被动聚合物层，每个被动聚合物层由单一聚合物材料形成 。 还公开了用于形成有机发光显示器的系统和方法。

公开(公告)号：US20050047927A1

公开(公告)日：2005-03-03

申请号：US10820447

申请日：2004-04-07

Applicant: Chung Lee ,  Oanh Nguyen ,  Wei Lee ,  Michael Solomensky ,  Atul Kumar ,  James Chung Chang ,  Binh Nguyen

Inventor： Chung Lee ,  Oanh Nguyen ,  Wei Lee ,  Michael Solomensky ,  Atul Kumar ,  James Chung Chang ,  Binh Nguyen

IPC: B05D1/00 ,  B05D3/06 ,  B05D7/24 ,  C23C16/452 ,  H01L21/312 ,  F04B1/00

CPC classification number: B05D1/60 ,  B05D1/007 ,  B05D3/062 ,  C23C16/452 ,  H01L21/02118 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/02348 ,  H01L21/312 ,  H01L21/3127

Abstract: A Process Module (“PM”) is designed to facilitate Transport Polymerization (“TP”) of precursors that are useful for preparations of low Dielectric Constant (“∈”) films. The PM consists primarily of a Material Delivery System (“MDS”) with a high temperature Vapor Phase Controller (“VFC”), a TP Reactor, a Treatment Chamber, a Deposition Chamber and a Pumping System. The PM is designed to facilitate TP for new precursors and for film deposition and stabilization processes.

Abstract translation: 工艺模块（“PM”）被设计用于促进可用于制备低介电常数（“ε”）薄膜的前体的传输聚合（“TP”）。 PM主要由具有高温气相控制器（“VFC”），TP反应器，处理室，沉积室和泵送系统的物料输送系统（“MDS”）组成。 PM被设计为促进TP的新前体和薄膜沉积和稳定过程。

公开(公告)号：US20050000434A1

公开(公告)日：2005-01-06

申请号：US10897797

申请日：2004-07-22

Applicant: Chung Lee ,  Atul Kumar ,  Chieh Chen

Inventor： Chung Lee ,  Atul Kumar ,  Chieh Chen

IPC: B01J19/12 ,  B01J19/18 ,  B05D1/00 ,  B05D3/02 ,  B05D3/06 ,  B05D7/24 ,  B29C71/02 ,  C08G61/02 ,  C08J5/18 ,  C08L65/00 ,  C08L65/04 ,  C23C16/452 ,  F28D17/00 ,  H01L21/312 ,  H01L21/768 ,  H01L23/532 ,  C23C16/00

CPC classification number: H01L23/5329 ,  B01J19/123 ,  B01J19/1887 ,  B01J2219/00153 ,  B01J2219/00159 ,  B01J2219/0879 ,  B05D1/007 ,  B05D1/60 ,  B05D3/0254 ,  B05D3/061 ,  B05D3/062 ,  B29C71/02 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  C08J2365/04 ,  C08L65/00 ,  C08L65/04 ,  C23C16/452 ,  F28D17/005 ,  H01L21/0212 ,  H01L21/02263 ,  H01L21/312 ,  H01L21/3127 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

Abstract: A reactor for forming a reactive intermediate from a precursor having a general formula of Xm—Ar—(CZ′Z″Y)n is disclosed, wherein X and Y are leaving groups, wherein Ar is an aromatic moiety and wherein the reactive intermediate has at least two free radicals. The reactor includes an inlet for admitting a flow of the precursor into the reactor, an interior having a surface at least partially formed from a material M that reacts with at least one of X and Y to remove at least one of X and Y from the precursor and to form at least one of a compound MaYb and a compound McXd, an outlet for admitting a flow of the reactive intermediate out of the reactor.

Abstract translation: 公开了一种用于由具有通式Xm-Ar-（CZ'Z'Y）n的前体形成反应性中间体的反应器，其中X和Y是离去基团，其中Ar是芳族部分，其中反应性中间体 至少有两个自由基。 所述反应器包括用于允许前体流入反应器的入口，内部具有至少部分地由材料M形成的表面，所述材料M与X和Y中的至少一个反应以将X和Y中的至少一个从 前体，并形成化合物MaYb和化合物McXd中的至少一种，用于将反应性中间体流从反应器中引入的出口。

公开(公告)号：US06818990B2

公开(公告)日：2004-11-16

申请号：US09542095

申请日：2000-04-03

Applicant: Mark J. DelaRosa ,  Toh-Ming Lu ,  Atul Kumar

Inventor： Mark J. DelaRosa ,  Toh-Ming Lu ,  Atul Kumar

IPC: H01L23485

CPC classification number: H01L21/76829 ,  H01L21/0212 ,  H01L21/02131 ,  H01L21/3127 ,  H01L21/31629 ,  H01L21/76828 ,  H01L21/76834 ,  H01L21/76864 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

Abstract: Structures and methods for preventing fluorine diffusion from a fluorinated dielectric material having a low dielectric constant are disclosed. Various fluorine diffusion barriers are described, each of which comprises doped or undoped silicon in combination with tantalum, tantalum nitride, tantalum silicide, cobalt, cobalt silicide, or mixtures thereof. Fluorine diffusion from fluorinated dielectrics is stopped by the barriers at temperatures as high as 450° C. In practice, one of the disclosed fluorine diffusion barriers is positioned between a fluorine-containing insulator and a conductive metal interconnect or metal interconnect diffusion barrier, thereby preventing diffusion of the fluorine atoms into the adjacent interconnect/barrier.

Abstract translation: 公开了用于防止氟扩散从具有低介电常数的氟化介电材料的结构和方法。 描述了各种氟扩散阻挡层，其各自包括与钽，氮化钽，硅化钽，钴，硅化钴或其混合物组合的掺杂或未掺杂的硅。 氟化电介质的氟扩散在高达450℃的温度下被阻挡层阻止。实际上，所公开的氟扩散阻挡层之一位于含氟绝缘体和导电金属互连或金属互连扩散屏障之间，从而防止 氟原子扩散到相邻的互连/屏障中。

公开(公告)号：US09660751B2

公开(公告)日：2017-05-23

申请号：US14623515

申请日：2015-02-17

Applicant: Sanjay Batra ,  Atul Kumar

Inventor： Sanjay Batra ,  Atul Kumar

IPC: H04J13/16 ,  H04W72/00 ,  H04W12/02

CPC classification number: H04J13/16 ,  H04W12/02 ,  H04W72/00

Abstract: A wireless communication system includes a processor that receives a downlink control information (DCI) associated with a transmission channel used for transmitting a RF signal and a control channel element index associated with the DCI. The processor determines a scrambling code based on the control channel element index for the DCI, scrambles the DCI using the scrambling code, generates a scrambled DCI, and modulates the scrambled. DCI to generate a modulated symbol. The processor uses look-up tables to determine a resource element group (REG) based on the control channel element index, map the modulated symbol to the REG, and generate a transmission frame.

公开(公告)号：US09638720B2

公开(公告)日：2017-05-02

申请号：US14129513

申请日：2013-08-26

Applicant: Ramnarayanan Muthukaruppan ,  Srinivasulu Malepati ,  Atul Kumar ,  Santhosh Nen

Inventor： Ramnarayanan Muthukaruppan ,  Srinivasulu Malepati ,  Atul Kumar ,  Santhosh Nen

IPC: G01R15/14 ,  G01R19/252 ,  G05F1/565 ,  G06F1/26

CPC classification number: G01R15/146 ,  G01R15/207 ,  G01R19/252 ,  G05F1/565 ,  G06F1/26

Abstract: Described is a current sensor comprising: a main resistive branch having a target device coupled to a load at a first node; a replica resistive branch having a replica device which is a replica of the target device, the replica device coupled to a current digital to analog converter (DAC) at a second node; and an analog to digital converter (ADC) coupled directly or indirectly to the first and second nodes, the ADC to generate an output coupled to the current DAC.

公开(公告)号：US08232026B2

公开(公告)日：2012-07-31

申请号：US12904395

申请日：2010-10-14

Applicant: Atul Kumar ,  Mark Stephens Ricketts ,  Shinichi Hirano

Inventor： Atul Kumar ,  Mark Stephens Ricketts ,  Shinichi Hirano

IPC: H01M8/00

CPC classification number: H01M8/0206 ,  C22C1/02 ,  H01M8/0245 ,  H01M8/026

Abstract: In one embodiment, an electrochemical cell such as a fuel cell is provided to include a bipolar plate. The bipolar plate includes a metal substrate defining at least one flow channel having a channel span of no greater than 1.0 millimeter; and the metal substrate includes a stainless steel material less precious than stainless steel SS316L. In certain instances, the channel span is of 0.7 to 0.9 millimeters. In certain other instances, the flow channel has a channel depth of 0.3 to 0.5 millimeters. In yet other instances, the plate substrate includes stainless steel SS301, stainless steel SS302, or combinations thereof. In another embodiment, the electrochemical cell further includes a gas diffusion layer disposed next to the bipolar plate.

Abstract translation: 在一个实施例中，提供诸如燃料电池的电化学电池以包括双极板。 双极板包括限定至少一个具有不大于1.0毫米的通道跨度的流动通道的金属基板; 并且金属基板包括不锈钢材料，不锈钢SS316L不贵。 在某些情况下，通道跨度为0.7至0.9毫米。 在某些其他情况下，流动通道具有0.3至0.5毫米的通道深度。 在其他情况下，板基板包括不锈钢SS301，不锈钢SS302或其组合。 在另一个实施例中，电化学电池还包括邻近双极板设置的气体扩散层。

公开(公告)号：US07621794B2

公开(公告)日：2009-11-24

申请号：US11271410

申请日：2005-11-09

Applicant: Chung J. Lee ,  Atul Kumar ,  Chieh Chen

Inventor： Chung J. Lee ,  Atul Kumar ,  Chieh Chen

IPC: H05B33/10 ,  H01L51/56 ,  G02F1/335 ,  C03B27/00

CPC classification number: H01L51/5256 ,  Y10T428/1082 ,  Y10T428/2852

Abstract: A method of encapsulating an organic light-emitting device is disclosed, wherein the device includes a light-emitting portion and an electrical contact portion, the method including forming a polymer layer over the light-emitting portion and the electrical contact portion of the device; forming a separation in the polymer layer between a portion of the polymer layer disposed over the light-emitting portion of the device and a portion of the polymer layer disposed over the electrical contact portion of the device; adhering a film removal structure to the portion of the polymer layer disposed over the electrical contact portion of the device; and removing the film removal structure, thereby causing the removal of the portion of the polymer layer disposed over the electrical contact portion of the device.

Abstract translation: 公开了一种封装有机发光器件的方法，其中该器件包括发光部分和电接触部分，该方法包括在器件的发光部分和电接触部分上形成聚合物层; 在所述聚合物层的设置在所述器件的发光部分之上的部分和设置在所述器件的电接触部分之上的聚合物层的一部分之间的聚合物层中形成分离; 将膜去除结构粘附到设置在所述器件的电接触部分上方的聚合物层的部分; 并去除膜去除结构，从而导致去除设置在器件的电接触部分上的聚合物层的部分。