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1.发明授权公开(公告)号：US06818990B2
公开(公告)日：2004-11-16
申请号：US09542095
申请日：2000-04-03
申请人： Mark J. DelaRosa , Toh-Ming Lu , Atul Kumar
发明人： Mark J. DelaRosa , Toh-Ming Lu , Atul Kumar
IPC分类号： H01L23485
CPC分类号： H01L21/76829 , H01L21/0212 , H01L21/02131 , H01L21/3127 , H01L21/31629 , H01L21/76828 , H01L21/76834 , H01L21/76864 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2221/1078 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： Structures and methods for preventing fluorine diffusion from a fluorinated dielectric material having a low dielectric constant are disclosed. Various fluorine diffusion barriers are described, each of which comprises doped or undoped silicon in combination with tantalum, tantalum nitride, tantalum silicide, cobalt, cobalt silicide, or mixtures thereof. Fluorine diffusion from fluorinated dielectrics is stopped by the barriers at temperatures as high as 450° C. In practice, one of the disclosed fluorine diffusion barriers is positioned between a fluorine-containing insulator and a conductive metal interconnect or metal interconnect diffusion barrier, thereby preventing diffusion of the fluorine atoms into the adjacent interconnect/barrier.
摘要翻译： 公开了用于防止氟扩散从具有低介电常数的氟化介电材料的结构和方法。 描述了各种氟扩散阻挡层，其各自包括与钽，氮化钽，硅化钽，钴，硅化钴或其混合物组合的掺杂或未掺杂的硅。 氟化电介质的氟扩散在高达450℃的温度下被阻挡层阻止。实际上，所公开的氟扩散阻挡层之一位于含氟绝缘体和导电金属互连或金属互连扩散屏障之间，从而防止 氟原子扩散到相邻的互连/屏障中。
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公开(公告)号：US06527855B2
公开(公告)日：2003-03-04
申请号：US09974178
申请日：2001-10-10
申请人： Mark J. DelaRosa , Toh-Ming Lu , Atul Kumar
发明人： Mark J. DelaRosa , Toh-Ming Lu , Atul Kumar
IPC分类号： C30B2500
CPC分类号： C23C16/18
摘要： Cobalt thin films were prepared by atomic layer deposition (ALD). The precursor cobalt(II) acetylacetonate [Co(C5H7O2)2] was used to selectively deposit films onto iridium substrates using hydrogen reduction. Cobalt growth was observed on SiO2, silicon, fluorinated silica glass (FSG), and tantalum when silane was used as a reducing agent.
摘要翻译： 通过原子层沉积（ALD）制备钴薄膜。 使用乙酸丙酮前体钴（II）[Co（C 5 H 7 O 2）2]使用氢还原将膜选择性地沉积在铱底物上。 当使用硅烷作为还原剂时，在SiO2，硅，氟化石英玻璃（FSG）和钽上观察到钴生长。
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公开(公告)号：US08623491B2
公开(公告)日：2014-01-07
申请号：US13617249
申请日：2012-09-14
申请人： Toh-Ming Lu , Gwo-Ching Wang , Fu Tang , Thomas Parker
发明人： Toh-Ming Lu , Gwo-Ching Wang , Fu Tang , Thomas Parker
CPC分类号： C01B3/0084 , B22F1/0018 , B22F2001/0033 , B82Y30/00 , C01B3/0026 , C23C14/16 , C23C14/226 , C23C14/24 , C30B23/00 , C30B29/02 , C30B29/60 , Y02E60/327 , Y10T428/23993 , Y10T428/24174
摘要： A nanostructure includes a plurality of metal nanoblades positioned with one edge on a substrate. Each of the plurality of metal nanoblades has a large surface area to mass ratio and a width smaller than a length. A method of storing hydrogen includes coating a plurality of magnesium nanoblades with a hydrogen storage catalyst and storing hydrogen by chemically forming magnesium hydride with the plurality of magnesium nanoblades.
摘要翻译： 纳米结构包括多个金属纳米棒，其位于基底上的一个边缘。 多个金属纳米棒中的每一个具有大的表面积与质量比，并且宽度小于长度。 一种储存氢的方法包括用储氢催化剂涂覆多个镁纳米薄片并通过与多个镁纳米薄层化学形成氢化镁来储存氢。
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4.发明授权Enhanced step coverage of thin films on patterned substrates by oblique angle PVD 有权通过斜角PVD增强图案化基板上的薄膜的阶跃覆盖公开(公告)号：US07244670B2
公开(公告)日：2007-07-17
申请号：US10872083
申请日：2004-06-18
CPC分类号： H01L21/76843 , C23C14/046 , C23C14/505 , H01L21/2855
摘要： A method and an apparatus for fabricating an integrated circuit entail directing a vapor flux toward a substrate surface from a plurality of directions associated with a plurality of azimuth angles, and selecting a deposition angle of the vapor flux, relative to a normal incidence, to obtain a substantially conformal film. The surface feature can be associated with, for example, one or more vias and/or one or more trenches.
摘要翻译： 用于制造集成电路的方法和装置需要从与多个方位角相关联的多个方向将蒸汽通量引向衬底表面，并且相对于法向入射选择蒸气通量的沉积角度，以获得 基本上保形膜。 表面特征可以与例如一个或多个通孔和/或一个或多个沟槽相关联。
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公开(公告)号：US20060099819A1
公开(公告)日：2006-05-11
申请号：US11219211
申请日：2005-09-02
申请人： Leonard Interrante , Zhizhong Wu , Pei-I Wang , Toh-Ming Lu
发明人： Leonard Interrante , Zhizhong Wu , Pei-I Wang , Toh-Ming Lu
IPC分类号： H01L21/31
CPC分类号： H01L21/02123 , H01L21/02282 , H01L21/3121
摘要： Low dielectric compositions and methods of use thereof in integrated circuits are disclosed. The low dielectric compositions are derived from carbosilane polymers and oligomers containing imbedded sila- or disilacyclobutane rings and, after heating to induce cross-linking, may be used as an interlayer dielectric as well as a capping layer within an integrated circuit.
摘要翻译： 公开了低介电常数组合物及其在集成电路中的使用方法。 低电介质组合物衍生自碳硅烷聚合物和含有嵌入的硅或二环丁烷环的低聚物，并且在加热诱导交联之后，可以用作集成电路内的层间电介质以及覆盖层。
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6.发明授权
公开(公告)号：US6022595A
公开(公告)日：2000-02-08
申请号：US792044
申请日：1997-01-31
申请人： John F. McDonald , Toh-Ming Lu , Bin Wang , Guang Rong Yang
发明人： John F. McDonald , Toh-Ming Lu , Bin Wang , Guang Rong Yang
摘要： A method of depositing a polymer film onto a semiconductor wafer is provided which includes the steps of connecting the wafer to one terminal of a voltage source, connecting an electrode to an other pole of the voltage source and placing the electrode and substrate in superposed orientation to form a parallel plate capacitor, wherein an electric field is produced between the electrode and substrate. The parallel plate capacitor is placed in a chamber where pressure andc temperature are maintained at predetermined levels and gaseous monomers of the desired film to be polymerized are introduced into the chamber. The gaseous monomers are then permitted to flow between the electrode and wafer while the voltage of the electric field is maintained at a level sufficient to polarize the monomers without breaking their chemical bonds wherein the polarized monomers react to form a polymer film on the wafer at an enhanced rate.
摘要翻译： 提供了一种在半导体晶片上沉积聚合物膜的方法，其包括以下步骤：将晶片连接到电压源的一个端子，将电极连接到电压源的另一个极，并将电极和衬底放置成叠置的方向 形成平行板电容器，其中在电极和基板之间产生电场。 将平行板电容器放置在压力和温度保持在预定水平的室中，并将待聚合的所需膜的气态单体引入室中。 然后允许气态单体在电极和晶片之间流动，同时电场的电压保持在足以使单体极化的水平，而不破坏其化学键，其中极化单体在晶片上反应形成聚合物膜， 增加率。
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公开(公告)号：US07501154B2
公开(公告)日：2009-03-10
申请号：US11061853
申请日：2005-02-18
CPC分类号： B05D1/60 , C08G61/025 , C08G2261/3424 , C09D165/00 , C09D165/04 , H01L21/02118 , H01L21/02271 , H01L21/312 , H01L21/76828 , H01L21/76829 , Y10T428/24959 , Y10T428/26 , Y10T428/265 , Y10T428/31678
摘要： The present invention relates to a method for forming a conformal coating having a reactive surface. In the method, an ultrathin layer composed of a polymer having repeating units derived from unsubstituted p-xylylene, substituted p-xylylene, phenylene vinylene, phenylene ethynylene, 1,4-methylene naphthalene, 2,6-methylene naphthalene, 1,4-vinylene naphthalene, 2,6-vinylene naphthalene, 1,4-ethynylene naphthalene, 2,6-ethynylene naphthalene, combinations thereof, precursors therefor or combinations of precursors therefor, is deposited on a substrate by a thermal CVD process. The ultrathin layer is optionally exposed to a source of oxygen and then exposed to a reagent selected from ammonium hydroxide, tetramethylammonium hydroxide, ammonium sulfide, dimethyl sulfide, thioacetic acid, sodium hydrosulfide, sodium sulfide, hydrazine, acetamide and combinations thereof. The surface may be modified readily after the treatment.
摘要翻译： 本发明涉及形成具有反应性表面的保形涂层的方法。 在该方法中，由具有由未取代的对二甲苯衍生的重复单元的聚合物构成的超薄层，取代的对二甲苯，亚苯基亚乙烯基，亚苯基亚乙炔基，1,4-亚甲基萘，2,6-亚甲基萘， 亚乙烯基萘，2,6-亚乙烯基萘，1,4-亚乙炔基萘，2,6-亚乙炔基萘，其组合，其前体或其前体的组合通过热CVD法沉积在基材上。 超薄层任选地暴露于氧源，然后暴露于选自氢氧化铵，四甲基氢氧化铵，硫化铵，二甲基硫醚，硫代乙酸，氢硫化钠，硫化钠，肼，乙酰胺及其组合的试剂。 处理后表面可以容易地修饰。
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公开(公告)号：US07019386B2
公开(公告)日：2006-03-28
申请号：US10832515
申请日：2004-04-27
申请人： Ramkrishna Ghoshal , Pei-I Wang , Toh-Ming Lu , Shyam P. Murarka
发明人： Ramkrishna Ghoshal , Pei-I Wang , Toh-Ming Lu , Shyam P. Murarka
IPC分类号： H01L23/58
CPC分类号： C09D183/06 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： Semiconductor devices employing siloxane epoxy polymers as low-κ dielectric films are disclosed. The devices include a semiconductor substrate, one or more metal layers or structures and one or more dielectric films, wherein at least one dielectric film in the devices is a siloxane epoxy polymer. Use of siloxane epoxy polymers is advantageous, in part, because the polymers adhere well to metals and have dielectric constants as low as 1.8. Thus, the disclosed semiconductor devices offer much better performance than devices fabricated using conventional dielectric materials. Furthermore, the siloxane epoxy polymer dielectrics are fully curable at low temperatures, exhibit low leakage currents, and remain stable at temperatures greater than 400° C. making them particularly attractive for use in the semiconductor industry
摘要翻译： 公开了使用硅氧烷环氧聚合物作为低k电介质膜的半导体器件。 这些器件包括半导体衬底，一个或多个金属层或结构以及一个或多个介电膜，其中器件中的至少一个电介质膜是硅氧烷环氧聚合物。 硅氧烷环氧聚合物的使用部分是有利的，因为聚合物很好地粘附到金属上并具有低至1.8的介电常数。 因此，所公开的半导体器件比使用常规电介质材料制造的器件提供更好的性能。 此外，硅氧烷环氧聚合物电介质在低温下是完全可固化的，表现出低的漏电流，并且在高于400℃的温度下保持稳定，使得它们在半导体工业中特别有吸引力
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公开(公告)号：US20050239295A1
公开(公告)日：2005-10-27
申请号：US10832629
申请日：2004-04-27
申请人： Pei-l Wang , Toh-Ming Lu , Shyam Murarka , Ramkrishna Ghoshal
发明人： Pei-l Wang , Toh-Ming Lu , Shyam Murarka , Ramkrishna Ghoshal
IPC分类号： G02B6/138 , H01L21/3105 , H01L21/312 , H05K3/36
CPC分类号： H01L21/02126 , G02B6/138 , H01L21/02216 , H01L21/02282 , H01L21/02304 , H01L21/02307 , H01L21/31058 , H01L21/312 , H01L21/3121 , H01L21/3122
摘要： A method for treating the surfaces of materials to improve wettability and adhesion of subsequently deposited polymer layers is disclosed. Suitable materials for practice of the method include polymeric materials and silicon-containing materials is disclosed. The method involves contacting at least a portion of the surface of the material with an aqueous solution of sulfuric acid or phosphoric acid, followed by rinsing with water. After the acid treatment, the contact angle of the surface decreases, and subsequently deposited polymer coatings easily wet the material's surface and exhibit enhanced adhesion. The method may be used to fabricate useful structures, such as semiconductor structures, optical waveguide structures, and coated articles.
摘要翻译： 公开了一种用于处理材料表面以改善随后沉积的聚合物层的润湿性和粘附性的方法。 用于实施该方法的合适材料包括聚合材料和含硅材料。 该方法包括将材料表面的至少一部分与硫酸或磷酸的水溶液接触，然后用水冲洗。 在酸处理后，表面的接触角减小，随后沉积的聚合物涂层容易使材料的表面湿润并表现出增强的附着力。 该方法可用于制造有用的结构，例如半导体结构，光波导结构和涂覆制品。
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公开(公告)号：US20050236695A1
公开(公告)日：2005-10-27
申请号：US10832515
申请日：2004-04-27
申请人： Ramkrishna Ghoshal , Pei-I Wang , Toh-Ming Lu , Shyam Murarka
发明人： Ramkrishna Ghoshal , Pei-I Wang , Toh-Ming Lu , Shyam Murarka
IPC分类号： C08G77/04 , C09D183/06 , H01L23/532 , H01L23/58
CPC分类号： C09D183/06 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： Semiconductor devices employing siloxane epoxy polymers as low-κ dielectric films are disclosed. The devices include a semiconductor substrate, one or more metal layers or structures and one or more dielectric films, wherein at least one dielectric film in the devices is a siloxane epoxy polymer. Use of siloxane epoxy polymers is advantageous, in part, because the polymers adhere well to metals and have dielectric constants as low as 1.8. Thus, the disclosed semiconductor devices offer much better performance than devices fabricated using conventional dielectric materials. Furthermore, the siloxane epoxy polymer dielectrics are fully curable at low temperatures, exhibit low leakage currents, and remain stable at temperatures greater than 400° C. making them particularly attractive for use in the semiconductor industry
摘要翻译： 公开了使用硅氧烷环氧聚合物作为低k电介质膜的半导体器件。 这些器件包括半导体衬底，一个或多个金属层或结构以及一个或多个介电膜，其中器件中的至少一个电介质膜是硅氧烷环氧聚合物。 硅氧烷环氧聚合物的使用部分是有利的，因为聚合物很好地粘附到金属上并具有低至1.8的介电常数。 因此，所公开的半导体器件比使用常规电介质材料制造的器件提供更好的性能。 此外，硅氧烷环氧聚合物电介质在低温下是完全可固化的，表现出低的漏电流，并且在高于400℃的温度下保持稳定，使得它们在半导体工业中特别有吸引力
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