公开(公告)号：US07581314B2

公开(公告)日：2009-09-01

申请号：US11358823

申请日：2006-02-21

申请人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Paivikki Buchwalter ,  John M. Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John H. Magerlein ,  Kenneth Stein ,  Richard P. Volant ,  James A. Tornello ,  Jennifer Lund

发明人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Paivikki Buchwalter ,  John M. Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John H. Magerlein ,  Kenneth Stein ,  Richard P. Volant ,  James A. Tornello ,  Jennifer Lund

IPC分类号： H01K3/10

CPC分类号： H01H59/0009 ,  H01H2001/0052 ,  Y10T29/49156 ,  Y10T29/49165 ,  Y10T29/49204

摘要： A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400° C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.

摘要翻译： 描述了提供有作为铜电极的氧阻隔的贵金属触点的半导体微机电系统（MEMS）开关。 MEMS开关完全集成到CMOS半导体制造线中。 集成技术，材料和工艺完全兼容铜芯片金属化工艺，通常是低成本和低温工艺（低于400℃）。 MEMS开关包括：在空腔内的可移动光束，可移动光束在光束的一端或两端锚定到空腔的壁; 嵌入可移动光束中的第一电极; 以及第二电极，其嵌入在所述空腔的壁中并且面向所述第一电极，其中所述第一和第二电极分别被所述贵金属接触物覆盖。

公开(公告)号：US20080319565A1

公开(公告)日：2008-12-25

申请号：US11767686

申请日：2007-06-25

申请人： David P. Colon ,  Bradley P. Jones ,  Jason J. Mazzotti ,  Richard P. Volant

发明人： David P. Colon ,  Bradley P. Jones ,  Jason J. Mazzotti ,  Richard P. Volant

IPC分类号： G06F19/00

CPC分类号： G06Q10/06

摘要： A computer program product for performing automated error checking in an automated production line, includes instructions for: receiving change information for changing a production process; comparing the change information to standard information for the production process; and reporting information from the comparing. Manufacturing execution software and a system for employing the manufacturing execution software are provided.

摘要翻译： 一种用于在自动化生产线中执行自动错误检查的计算机程序产品，包括：用于接收改变生产过程的变更信息的指令; 将变更信息与生产过程的标准信息进行比较; 并从比较报告信息。 提供制造执行软件和采用制造执行软件的系统。

公开(公告)号：US20080306797A1

公开(公告)日：2008-12-11

申请号：US11761081

申请日：2007-06-11

申请人： Mohammed F. Fayaz ,  Bradley P. Jones ,  Debra C. Leach ,  Richard P. Volant

发明人： Mohammed F. Fayaz ,  Bradley P. Jones ,  Debra C. Leach ,  Richard P. Volant

IPC分类号： G05B19/00

CPC分类号： G06Q10/109 ,  G06Q10/02 ,  G06Q10/06312 ,  G06Q10/06315 ,  G06Q10/06393

摘要： A method for automated resource management and optimization, the method includes: monitoring one or more of the following: resource usage, level of resource utilization, and resource amenities; receiving a request for reserving a resource; determining whether the request for the resource is granted as originally requested; wherein the determining of whether to grant the request for resources as originally requested is based one or more thresholds and conditions; wherein the one or more thresholds and conditions are based on the monitoring of at least one of the following: resource usage, the level of resource utilization; and resource amenities; and wherein if the request for reserving a resource fails to meet the one or more thresholds and conditions the request is either denied or modified.

摘要翻译： 一种自动资源管理和优化的方法，所述方法包括：监视以下一个或多个：资源使用，资源利用水平和资源设施; 接收保留资源的请求; 确定资源请求是否按原始请求被授予; 其中确定是否基于一个或多个阈值和条件基于原始请求来准许资源请求; 其中所述一个或多个阈值和条件基于以下至少一个的监视：资源使用，资源利用水平; 资源设施; 并且其中如果所述预留资源的请求不能满足所述一个或多个阈值并且所述请求被拒绝或修改。

公开(公告)号：US20080167743A1

公开(公告)日：2008-07-10

申请号：US11868739

申请日：2007-10-08

申请人： Richard P. Volant ,  Bradley P. Jones ,  Sameer T. Shikalgar ,  Michael J. Toner ,  Yutong Wu

发明人： Richard P. Volant ,  Bradley P. Jones ,  Sameer T. Shikalgar ,  Michael J. Toner ,  Yutong Wu

IPC分类号： G06F19/00

CPC分类号： G06Q50/04 ,  G06Q10/06 ,  Y02P80/40 ,  Y02P90/30 ,  Y02P90/86

摘要： Methods, systems, and computer program products for managing movement of work-in-process materials (WIPs) between processing units are provided. A system includes a host system and an application executing thereon. The application implements a method that includes receiving a list of WIP lots, and indexing a list of routes with raw process time by process steps and with safe holding points. The method also includes indexing a scheduled start time of shutdown for the process units and calculating transport time for moving each of the lots to the next nearest safe holding point in the route. For each lot, the method includes determining whether the lot is at a safe holding point, and assigning a dispatch priority to the lot if it is not at the safe holding point. The method further includes sending a list of assigned dispatch priorities to a dispatcher for transporting the lots to corresponding safe holding points prior to initiating the shutdown.

摘要翻译： 提供了用于管理处理单元之间的在制品（WIP）的移动的方法，系统和计算机程序产品。 系统包括主机系统和在其上执行的应用。 应用程序实现了一种方法，包括接收WIP批次的列表，并通过流程步骤和安全的保留点对原始进程时间的路由索引进行索引。 该方法还包括为处理单元索引预定的关闭开始时间，并计算将每个批次移动到路线中的下一个最近的安全保持点的运输时间。 对于每个批次，该方法包括确定批次是否处于安全的保持点，以及如果批次不在安全保存点，则向批次分配调度优先级。 该方法还包括将发送分配优先级的列表发送到调度器，用于在开始关闭之前将批量传送到相应的安全保持点。

公开(公告)号：US20080167733A1

公开(公告)日：2008-07-10

申请号：US11939792

申请日：2007-11-14

申请人： Richard P. Volant ,  Bradley P. Jones ,  Sameer T. Shikalgar ,  Michael J. Toner ,  Yutong Wu

发明人： Richard P. Volant ,  Bradley P. Jones ,  Sameer T. Shikalgar ,  Michael J. Toner ,  Yutong Wu

IPC分类号： G05B13/02

CPC分类号： G06Q50/04 ,  G06Q10/06 ,  Y02P80/40 ,  Y02P90/30 ,  Y02P90/86

摘要： Methods, systems, and computer program products for managing movement of work-in-process materials between processing units in an automated manufacturing environment are provided. A system includes a host system in communication with a work-in-process (WIP) material lot. The system also includes an application executing on the host. The application implements a method that includes tracking a position of the WIP material lot, receiving a list of the processing units designated to be inoperative during a down time, and receiving a start time and a duration of the down time. The method also includes determining a maximum dwell time for each of the designated processing units and scheduling movement of the WIP material lot during an interim between a current time and the start time of the down time based on current position of the work-in-process material lot, the current time, the start time and duration of the down time, and the maximum dwell time.

摘要翻译： 提供了用于管理在自动化制造环境中的处理单元之间的在制品材料的移动的方法，系统和计算机程序产品。 系统包括与工件在制品（WIP）材料批次通信的主机系统。 该系统还包括在主机上执行的应用程序。 应用程序实现一种方法，其包括跟踪WIP物料批次的位置，接收在停机期间被指定为不起作用的处理单元的列表，以及接收停机时间的开始时间和持续时间。 该方法还包括确定每个指定处理单元的最大驻留时间，并根据当前工作中的位置在当前时间与停机时间的开始时间间隔期间调度WIP材料批次的移动 材料批次，当前时间，停机时间的开始时间和持续时间以及最长停留时间。

公开(公告)号：US07005371B2

公开(公告)日：2006-02-28

申请号：US10709357

申请日：2004-04-29

申请人： Anil K. Chinthakindi ,  Robert A. Groves ,  Youri V. Tretiakov ,  Kunal Vaed ,  Richard P. Volant

发明人： Anil K. Chinthakindi ,  Robert A. Groves ,  Youri V. Tretiakov ,  Kunal Vaed ,  Richard P. Volant

IPC分类号： H01L21/4763

CPC分类号： H01P11/003 ,  H01L21/7682 ,  H01L21/76838 ,  H01L23/5222 ,  H01L23/5225 ,  H01L23/53238 ,  H01L2223/6622 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903 ,  H01L2924/3011 ,  H01L2924/00

摘要： A method for forming a transmission line structure for a semiconductor device includes forming an interlevel dielectric layer over a first metallization level, removing a portion of the interlevel dielectric layer and forming a sacrificial material within one or more voids created by the removal of the portion of the interlevel dielectric layer. A signal transmission line is formed in a second metallization level formed over the interlevel dielectric layer, the signal transmission line being disposed over the sacrificial material. A portion of dielectric material included within the second metallization level is removed so as to expose the sacrificial material, wherein a portion of the sacrificial material is exposed through a plurality of access holes formed through the signal transmission line. The sacrificial material is removed so as to create an air gap beneath the signal transmission line.

摘要翻译： 用于形成用于半导体器件的传输线结构的方法包括在第一金属化层上形成层间电介质层，去除层间电介质层的一部分，并在通过去除部分的部分产生的一个或多个空隙内形成牺牲材料 层间电介质层。 信号传输线形成在层间电介质层上形成的第二金属化层，信号传输线设置在牺牲材料之上。 包括在第二金属化水平内的电介质材料的一部分被去除以暴露牺牲材料，其中牺牲材料的一部分通过穿过信号传输线形成的多个访问孔而露出。 去除牺牲材料，以在信号传输线下方产生气隙。

公开(公告)号：US06834671B2

公开(公告)日：2004-12-28

申请号：US10743155

申请日：2003-12-22

申请人： John Michael Cotte ,  Kenneth John McCullough ,  Wayne Martin Moreau ,  John P. Simons ,  Charles J. Taft ,  Richard P. Volant

发明人： John Michael Cotte ,  Kenneth John McCullough ,  Wayne Martin Moreau ,  John P. Simons ,  Charles J. Taft ,  Richard P. Volant

IPC分类号： F16K1502

CPC分类号： F16K99/0001 ,  F15C5/00 ,  F16K15/023 ,  F16K99/0005 ,  F16K99/0007 ,  F16K99/0057 ,  F16K2099/0094 ,  Y10T137/7783 ,  Y10T137/7849 ,  Y10T137/7904

摘要： A check valve for micro electro mechanical structure devices (MEMS), and in particular pertains to a check valve which is adapted to be employed in connection with micro electro mechanical structure devices which are intended to be employed with supercritical fluids constituting working fluids. In a preferred embodiment, the check valve is equipped with a bypass channel including a freely moveable plug structure which, in the open position of the valve enables the ingress of supercritical fluids under high superatmospheric pressures, and subsequent to the filling of the system, let down to atmospheric pressure, causes the plug to be moved into a permanent valve-closed position.

摘要翻译： 一种用于微机电结构装置（MEMS）的止回阀，并且特别涉及一种适于与旨在与构成工作流体的超临界流体一起使用的微机电结构装置结合使用的止回阀。 在优选实施例中，止回阀配备有包括可自由移动的塞子结构的旁通通道，其在阀的打开位置使得能够在高超大气压下进入超临界流体，并且在系统的填充之后，让 降至大气压力，使插头移动到永久性阀关闭位置。

公开(公告)号：US06831363B2

公开(公告)日：2004-12-14

申请号：US10319032

申请日：2002-12-12

申请人： Timothy J. Dalton ,  Sanjit K. Das ,  Brett H. Engel ,  Brian W. Herbst ,  Habib Hichri ,  Bernd E. Kastenmeier ,  Kelly Malone ,  Jeffrey R. Marino ,  Arthur Martin ,  Vincent J. McGahay ,  Ian D. Melville ,  Chandrasekhar Narayan ,  Kevin S. Petrarca ,  Richard P. Volant

发明人： Timothy J. Dalton ,  Sanjit K. Das ,  Brett H. Engel ,  Brian W. Herbst ,  Habib Hichri ,  Bernd E. Kastenmeier ,  Kelly Malone ,  Jeffrey R. Marino ,  Arthur Martin ,  Vincent J. McGahay ,  Ian D. Melville ,  Chandrasekhar Narayan ,  Kevin S. Petrarca ,  Richard P. Volant

IPC分类号： H01L2348

CPC分类号： H01L21/76808 ,  H01L21/76801 ,  H01L21/76831 ,  H01L23/5226 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： An interconnect structure for a semiconductor device includes an organic, low dielectric constant (low-k) dielectric layer formed over a lower metallization level. A via formed is within the low-k dielectric layer, the via connecting a lower metallization line formed in the lower metallization level with an upper metallization line formed in an upper metallization level. The via is surrounded by a structural collar selected from a material having a coefficient of thermal expansion (CTE) so as to protect the via from shearing forces following a thermal expansion of the low-k dielectric layer.

摘要翻译： 用于半导体器件的互连结构包括在较低金属化水平上形成的有机低介电常数（低k）电介质层。 形成的通孔在低k电介质层内，通孔连接在下金属化层形成的下金属化线与上金属化层形成的上金属化线。 通孔被选自具有热膨胀系数（CTE）的材料的结构轴环包围，以便在低k电介质层的热膨胀之后保护通孔不受剪切力的影响。

公开(公告)号：US06815813B1

公开(公告)日：2004-11-09

申请号：US10604211

申请日：2003-07-01

申请人： Timothy J. Dalton ,  Kevin S. Petrarca ,  Michelle L. Steen ,  Cornelia K. Tsang ,  Richard P. Volant

发明人： Timothy J. Dalton ,  Kevin S. Petrarca ,  Michelle L. Steen ,  Cornelia K. Tsang ,  Richard P. Volant

IPC分类号： H01L2334

CPC分类号： H01L23/58 ,  H01L23/3677 ,  H01L2924/0002 ,  H01L2924/00

摘要： A system and method are provided for thermal dissipation from a heat producing electronic device. The system includes a substrate for fabricating integrated circuits, the substrate having a first face and a second face. The second face is disposed substantially parallel to the first face having an electronic device disposed therein. A metallized crack stop is disposed in the first face surrounding the electronic device. A plurality of first metal conduits extend through the substrate from the second face thereof to the crack stop, wherein each first metal conduit is in thermal contact with the crack stop to provide a thermal drain from the electronic device to the second face.

摘要翻译： 提供了一种从制热电子设备散热的系统和方法。 该系统包括用于制造集成电路的基板，该基板具有第一面和第二面。 第二面基本上平行于第一面设置，其中设置有电子装置。 在电子设备周围的第一面设有金属化的裂纹停止件。 多个第一金属导管从其第二面延伸穿过基板到裂缝停止部，其中每个第一金属导管与裂纹停止件热接触以提供从电子装置到第二面的热耗散。

公开(公告)号：US06798029B2

公开(公告)日：2004-09-28

申请号：US10434999

申请日：2003-05-09

申请人： Richard P. Volant ,  John C. Bisson ,  Donna R. Cote ,  Timothy J. Dalton ,  Robert A. Groves ,  Kevin S. Petrarca ,  Kenneth J. Stein ,  Seshadri Subbanna

发明人： Richard P. Volant ,  John C. Bisson ,  Donna R. Cote ,  Timothy J. Dalton ,  Robert A. Groves ,  Kevin S. Petrarca ,  Kenneth J. Stein ,  Seshadri Subbanna

IPC分类号： H01L2982

CPC分类号： H01H59/0009 ,  H01H2059/0018 ,  H01H2059/0072

摘要： A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.

摘要翻译： 描述了使用兼容工艺和材料制造与常规半导体互连级别集成的微机电开关（MEMS）的方法。 该方法基于制造容易修改以产生用于接触切换和任何数量的金属 - 介电金属开关的各种配置的电容开关。 该过程开始于铜镶嵌互连层，由金属导体嵌入电介质中。 铜互连的全部或部分凹陷到足以在开关处于闭合状态时提供电容气隙的程度，并为例如Ta / TaN的保护层提供空间。 在为开关指定的区域内限定的金属结构用作致动器电极以下拉可移动光束并且提供一个或多个路径用于开关信号横越。 气隙的优点是空气不会受到可能导致可靠性和电压漂移问题的电荷储存或捕集。 代替使电极凹陷以提供间隙，可以仅在电极上或周围添加电介质。 下一层是另一介质层，其被沉积到形成在下电极和形成开关器件的可移动梁之间的间隙的期望厚度上。 通过该电介质制造通孔以提供金属互连层和还包含可切换光束的下一个金属层之间的连接。 然后对通孔层进行图案化和蚀刻以提供包含下部激活电极以及信号路径的空腔区域。 然后用牺牲脱模材料填充空腔。 然后将该释放材料与电介质的顶部平坦化，由此提供构造波束层的平坦表面。