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51.发明授权公开(公告)号：US07709344B2
公开(公告)日：2010-05-04
申请号：US11164423
申请日：2005-11-22
IPC分类号： H01L21/76
CPC分类号： H01L21/32136 , H01L21/31116 , H01L21/76802 , H01L21/7684
摘要： A method comprises depositing a dielectric film layer, a hard mask layer, and a patterned photo resist layer on a substrate. The method further includes selectively etching the dielectric film layer to form sub-lithographic features by reactive ion etch processing and depositing a barrier metal layer and a copper layer. The method further includes etching the barrier metal layer and hard mask layer by gas cluster ion beam (GCIB) processing.
摘要翻译： 一种方法包括在衬底上沉积电介质膜层，硬掩模层和图案化光刻胶层。 该方法还包括通过反应离子蚀刻处理选择性地蚀刻电介质膜层以形成亚光刻特征，并沉积阻挡金属层和铜层。 该方法还包括通过气体簇离子束（GCIB）处理蚀刻阻挡金属层和硬掩模层。
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公开(公告)号：US07691736B2
公开(公告)日：2010-04-06
申请号：US11352047
申请日：2006-02-10
IPC分类号： H01L21/4763
CPC分类号： H01L21/3105 , H01L21/02074 , H01L21/31058 , H01L21/76814 , H01L21/76826 , H01L21/76834
摘要： Embodiments of the invention provide a semiconductor device having dielectric material and its method of manufacture. A method comprises a short (≦2 sec) flash activation of an ILD surface followed by flowing a precursor such as silane, DEMS, over the activated ILD surface. The precursor reacts with the activated ILD surface thereby selectively protecting the ILD surface. The protected ILD surface is resistant to plasma processing damage. The protected ILD surface eliminates the requirement of using a hard mask to protect a dielectric from plasma damage.
摘要翻译： 本发明的实施例提供一种具有介电材料的半导体器件及其制造方法。 一种方法包括ILD表面的短（＆nlE; 2秒）闪光激活，随后在活化的ILD表面上流动诸如硅烷DEMS之类的前体。 前体与活化的ILD表面反应，从而有选择地保护ILD表面。 受保护的ILD表面耐等离子体处理损伤。 受保护的ILD表面消除了使用硬掩模来保护电介质免受等离子体损伤的要求。
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公开(公告)号：US20100013104A1
公开(公告)日：2010-01-21
申请号：US12567490
申请日：2009-09-25
申请人： Wuping Liu , Michael Beck , John A. Fitzsimmons
发明人： Wuping Liu , Michael Beck , John A. Fitzsimmons
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L21/76804 , H01L21/02063 , H01L21/76814 , H01L21/76835
摘要： An integrated circuit processing system is provided including a substrate having an integrated circuit; an interconnect layer over the integrated circuit; a low-K dielectric layer over the interconnect layer; a hard mask layer over the low-K dielectric layer; a via opening through the hard mask layer and the low-K dielectric layer to the interconnect layer; and an interconnect metal in the via opening.
摘要翻译： 提供一种集成电路处理系统，其包括具有集成电路的基板; 集成电路上的互连层; 互连层上的低K电介质层; 在低K电介质层上的硬掩模层; 穿过所述硬掩模层和所述低K电介质层到所述互连层的通孔; 和通孔开口中的互连金属。
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公开(公告)号：US07480990B2
公开(公告)日：2009-01-27
申请号：US11306668
申请日：2006-01-06
IPC分类号： H05K3/02 , H01L21/302
CPC分类号： H01L21/76826 , H01L21/76802 , H01L21/76807 , H01L21/76825 , Y10T29/49117 , Y10T29/49155 , Y10T29/49165
摘要： Methods for forming conductor contacts provide for etching through a capping layer located upon a conductor contact region within a substrate. A first pair of methods provide for etching through at least a lower thickness of the capping layer with other than a reactive ion etch to provide an exposed conductor contact region. A partially overlapping second pair of methods provides for converting at least an upper thickness of the capping layer to a converted material layer that is removed incident to providing an exposed conductor contact region. As adjunct to any of the methods, a liner layer is formed and located upon the exposed conductor contact region in absence of an undesirable reactive environment.
摘要翻译： 用于形成导体触点的方法提供了通过位于衬底内的导体接触区域上的覆盖层的蚀刻。 第一对方法提供用除了反应离子蚀刻之外的至少较薄厚度的覆盖层的蚀刻以提供暴露的导体接触区域。 部分重叠的第二对方法提供了将覆盖层的至少上部厚度转换成被去除的转换材料层，以提供暴露的导体接触区域。 作为任何方法的辅助，在没有不期望的反应性环境的情况下，形成衬里层并且位于暴露的导体接触区域上。
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公开(公告)号：US07354333B2
公开(公告)日：2008-04-08
申请号：US10905816
申请日：2005-01-21
CPC分类号： B24B53/017
摘要： Methods for reconditioning a polishing pad and detecting diamond contamination of the polishing pad, are disclosed. In particular, the methods include the step of exposing the reconditioned polishing pad to an energy source to induce the diamond contamination to fluoresce. Detection of the diamond contamination is then made by detecting the fluorescence. Removal of the diamond contamination results in an improved reconditioned polishing pad. A reconditioning system for reconditioning a damaged polishing pad is also disclosed. The reconditioning system includes a reconditioning disk including a plurality of diamonds for reconditioning the polishing pad, wherein each diamond fluoresces when exposed to an energy source.
摘要翻译： 公开了用于修复抛光垫并检测抛光垫的金刚石污染的方法。 特别地，所述方法包括将修复后的抛光垫暴露于能量源以引起金刚石污染物发荧光的步骤。 然后通过检测荧光来检测金刚石污染物。 去除金刚石污染导致改进的修复抛光垫。 还公开了一种用于修复损坏的抛光垫的修复系统。 修复系统包括修复盘，其包括用于修复抛光垫的多个金刚石，其中当暴露于能量源时，每个金刚石发荧光。
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56.发明授权Advanced BEOL interconnect structures with low-k PE CVD cap layer and method thereof 失效具有低k PE CVD覆盖层的高级BEOL互连结构及其方法公开(公告)号：US06939797B2
公开(公告)日：2005-09-06
申请号：US10706773
申请日：2003-11-12
申请人： Edward Barth , John A. Fitzsimmons , Stephen M. Gates , Thomas H. Ivers , Sarah L. Lane , Jia Lee , Ann McDonald , Vincent McGahay , Darryl D. Restaino
发明人： Edward Barth , John A. Fitzsimmons , Stephen M. Gates , Thomas H. Ivers , Sarah L. Lane , Jia Lee , Ann McDonald , Vincent McGahay , Darryl D. Restaino
IPC分类号： H01L21/311 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/768 , H01L23/532 , H01L21/4763 , H01L21/44 , H01L21/461
CPC分类号： H01L21/76834 , H01L21/31144 , H01L21/3148 , H01L21/31612 , H01L21/31633 , H01L21/3185 , H01L21/76801 , H01L21/76807 , H01L21/76832 , H01L21/76838 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a diffusion barrier or cap layer having a low dielectric constant (low-k), where the cap layer is formed of silicon nitride by a plasma-enhanced chemical vapor deposition (PE CVD) process. The metallization structure also includes an inter-layer dielectric (ILD) formed of a carbon-containing dielectric material having a dielectric constant of less than about 4, and a continuous hardmask layer overlying the ILD which is preferably formed of silicon nitride or silicon carbide. A method for forming the BEOL metallization structure is also disclosed. The method includes a pre-clean or pre-activation step to improve the adhesion of the cap layer to the underlying copper conductors. The pre-clean or pre-activation step comprises exposing the copper surface to a reducing plasma including hydrogen, ammonia, nitrogen and/or noble gases.
摘要翻译： 公开了一种先进的后端（BEOL）金属化结构。 该结构包括具有低介电常数（低-k）的扩散阻挡层或覆盖层，其中通过等离子体增强化学气相沉积（PE CVD）工艺，覆盖层由氮化硅形成。 金属化结构还包括由具有小于约4的介电常数的含碳电介质材料形成的层间电介质（ILD），以及优选由氮化硅或碳化硅形成的ILD上的连续硬掩模层。 还公开了一种用于形成BEOL金属化结构的方法。 该方法包括预清洁或预激活步骤，以改善盖层与下面的铜导体的粘合性。 预清洁或预活化步骤包括将铜表面暴露于包括氢，氨，氮和/或惰性气体的还原等离子体。
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公开(公告)号：US06737747B2
公开(公告)日：2004-05-18
申请号：US10047965
申请日：2002-01-15
申请人： Edward Barth , John A. Fitzsimmons , Stephen M. Gates , Thomas H. Ivers , Sarah L. Lane , Jia Lee , Ann McDonald , Vincent McGahay , Darryl D. Restaino
发明人： Edward Barth , John A. Fitzsimmons , Stephen M. Gates , Thomas H. Ivers , Sarah L. Lane , Jia Lee , Ann McDonald , Vincent McGahay , Darryl D. Restaino
IPC分类号： H01L2348
CPC分类号： H01L21/76834 , H01L21/31144 , H01L21/3148 , H01L21/31612 , H01L21/31633 , H01L21/3185 , H01L21/76801 , H01L21/76807 , H01L21/76832 , H01L21/76838 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a diffusion barrier or cap layer having a low dielectric constant (low-k), where the cap layer is formed of silicon nitride by a plasma-enhanced chemical vapor deposition (PE CVD) process. The metallization structure also includes an inter-layer dielectric (ILD) formed of a carbon-containing dielectric material having a dielectric constant of less than about 4, and a continuous hardmask layer overlying the ILD which is preferably formed of silicon nitride or silicon carbide. A method for forming the BEOL metallization structure is also disclosed. The method includes a pre-clean or pre-activation step to improve the adhesion of the cap layer to the underlying copper conductors. The pre-clean or pre-activation step comprises exposing the copper surface to a reducing plasma including hydrogen, ammonia, nitrogen and/or noble gases.
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58.发明授权公开(公告)号：US06638878B2
公开(公告)日：2003-10-28
申请号：US09969361
申请日：2001-10-02
申请人： Darryl D. Restaino , Jeffrey C. Hedrick , John A. Fitzsimmons , Christy S. Tyberg , Chih-Chien Liu , Shahab Siddiqui
发明人： Darryl D. Restaino , Jeffrey C. Hedrick , John A. Fitzsimmons , Christy S. Tyberg , Chih-Chien Liu , Shahab Siddiqui
IPC分类号： H01L21461
CPC分类号： H01L21/02304 , H01L21/02118 , H01L21/02282 , H01L21/31051 , H01L21/31058 , H01L21/312 , Y10T428/29 , Y10T428/31504
摘要： A method for forming a planarized dielectric layer upon a semiconductor wafer is disclosed. In an exemplary embodiment of the invention, the method includes applying an adhesion promoter to the wafer, thereby forming an adhesion promoter layer. A dielectric material is applied in a spin-on fashion upon the adhesion promoter layer at a relative humidity of less than 40% and for a thickness setting duration of less than 30 seconds. Then, the dielectric material is dried by baking without additional spinning of the semiconductor wafer.
摘要翻译： 公开了一种在半导体晶片上形成平坦化电介质层的方法。 在本发明的一个示例性实施方案中，该方法包括将粘合促进剂施加到晶片上，从而形成粘附促进剂层。 将介电材料以相对湿度小于40％并且厚度设定持续时间小于30秒以旋涂方式施加到粘合促进剂层上。 然后，通过烘烤干燥电介质材料，而不需要半导体晶片的额外纺丝。
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公开(公告)号：US08791005B2
公开(公告)日：2014-07-29
申请号：US13525823
申请日：2012-06-18
IPC分类号： H01L23/532
CPC分类号： H05K3/423 , H01L21/76844 , H01L21/76846 , H01L21/76858 , H01L21/76898 , H01L23/481 , H01L23/53209 , H01L23/53214 , H01L23/53238 , H01L23/53242 , H01L23/53257 , H01L2924/0002 , Y10T428/12764 , H01L2924/00
摘要： A structure formed in an opening having a substantially vertical sidewall defined by a non-metallic material and having a substantially horizontal bottom defined by a conductive pad, the structure including a diffusion barrier covering the sidewall and a fill composed of conductive material. The structure including a first intermetallic compound separating the diffusion barrier from the conductive material, the first intermetallic compound comprises an alloying material and the conductive material, and is mechanically bound to the conductive material, the alloying material is at least one of the materials selected from the group of chromium, tin, nickel, magnesium, cobalt, aluminum, manganese, titanium, zirconium, indium, palladium, and silver; and a first high friction interface located between the diffusion barrier and the first intermetallic compound and parallel to the sidewall of the opening, wherein the first high friction interface results in a mechanical bond between the diffusion barrier and the first intermetallic compound.
摘要翻译： 一种形成在开口中的结构，其具有由非金属材料限定的基本上垂直的侧壁，并且具有由导电垫限定的基本上水平的底部，该结构包括覆盖侧壁的扩散阻挡层和由导电材料构成的填充物。 所述结构包括将所述扩散阻挡物与所述导电材料分离的第一金属间化合物，所述第一金属间化合物包括合金材料和所述导电材料，并且机械地结合到所述导电材料上，所述合金材料是选自以下的至少一种材料： 铬，锡，镍，镁，钴，铝，锰，钛，锆，铟，钯和银的组合; 以及位于所述扩散阻挡层和所述第一金属间化合物之间且平行于所述开口的侧壁的第一高摩擦界面，其中所述第一高摩擦界面导致所述扩散阻挡层和所述第一金属间化合物之间的机械结合。
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60.发明授权Detecting leaks in a fluid cooling system by sensing for a drop of fluid pressure in the system 有权通过感测系统中的一滴液压来检测流体冷却系统中的泄漏公开(公告)号：US08763445B2
公开(公告)日：2014-07-01
申请号：US13313046
申请日：2011-12-07
IPC分类号： G01M3/26
摘要： Embodiments of the present invention relate to detecting leaks in a fluid cooling system. One aspect of the present invention concerns an apparatus for detecting leaks in a fluid cooling system that includes a pressure exerting device for applying a pressure on a supply hose and a return hose of the cooling system, and a pressure gauge coupled to the pressure exerting device for detecting a drop of fluid pressure in the cooling system while the pressure is applied. The drop of fluid pressure indicates that there may be a leak in the cooling system.
摘要翻译： 本发明的实施例涉及检测流体冷却系统中的泄漏。 本发明的一个方面涉及一种用于检测流体冷却系统中的泄漏的装置，该装置包括用于对冷却系统的供应软管和回流软管施加压力的压力施加装置，以及耦合到压力施加装置的压力表 用于在施加压力时检测冷却系统中的液压的下降。 流体压力的下降表明冷却系统可能会有泄漏。
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