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162 条记录 (耗时 0.042 秒)

    System and methods for high rate hardware-accelerated network protocol processing
    52.
    发明授权
    System and methods for high rate hardware-accelerated network protocol processing 有权
    高速率硬件加速网络协议处理的系统和方法

    公开(公告)号：US07389462B1

    公开(公告)日：2008-06-17

    申请号：US10781553

    申请日：2004-02-17

    申请人： Linghsiao Wang ,  Li Xu

    发明人： Linghsiao Wang ,  Li Xu

    IPC分类号： H04L1/18 ,  G08C25/02

    CPC分类号： H04L1/188

    摘要： Disclosed is a system and methods for accelerating network protocol processing for devices configured to process network traffic at relatively high data rates. The system incorporates a hardware-accelerated protocol processing module that handles steady state network traffic and a software-based processing module that handles infrequent and exception cases in network traffic processing.

    摘要翻译： 公开了一种用于加速网络协议处理的系统和方法，该设备被配置为以相对高的数据速率处理网络流量。 该系统包含处理稳态网络流量的硬件加速协议处理模块，以及处理网络流量处理中不频繁和异常情况的基于软件的处理模块。

    Diamond coated parts in a plasma reactor
    56.
    发明授权
    Diamond coated parts in a plasma reactor 失效
    在等离子体反应器中的金刚石涂层部件

    公开(公告)号：US06508911B1

    公开(公告)日：2003-01-21

    申请号：US09375243

    申请日：1999-08-16

    申请人： Nianci Han ,  Hong Shih ,  Jennifer Y. Sun ,  Li Xu

    发明人： Nianci Han ,  Hong Shih ,  Jennifer Y. Sun ,  Li Xu

    IPC分类号： H05H100

    CPC分类号： H01J37/32467 ,  C23C16/27 ,  H01J37/32477

    摘要： A diamond coating formed on a bulk member used in a plasma processing chamber for processing a substrate such as a semiconductor wafer. The coating is particularly useful in a plasma etching chamber using a chlorine-based chemistry to etch metal. One class of such parts includes a dielectric chamber wall, in particular, a chamber wall through which RF or microwave energy is coupled into the chamber to support the plasma. For example, an RF inductive coil is positioned outside the chamber wall and inductively couples energy into the chamber. Exemplary substrates for the diamond coating include alumina, silicon nitride, silicon carbide, polysilicon, and a SiC/Si composite. Amorphous carbon may be substituted for diamond.

    摘要翻译： 在用于处理诸如半导体晶片的基板的等离子体处理室中的主体部件上形成的金刚石涂层。 该涂层在使用氯基化学蚀刻金属的等离子体蚀刻室中特别有用。 一类这样的部件包括电介质室壁，特别是室壁，RF或微波能量通过室壁耦合到室中以支撑等离子体。 例如，RF感应线圈定位在室壁外部并且将能量感应地耦合到腔室中。 用于金刚石涂层的示例性基底包括氧化铝，氮化硅，碳化硅，多晶硅和SiC / Si复合材料。 无定形碳可以代替金刚石。

    Beam automation in charged-particle-beam systems
    57.
    发明授权
    Beam automation in charged-particle-beam systems 有权
    带束粒子束系统中的束自动化

    公开(公告)号：US06476398B1

    公开(公告)日：2002-11-05

    申请号：US09514080

    申请日：2000-02-26

    申请人： Li Xu ,  Richard Barnard

    发明人： Li Xu ,  Richard Barnard

    IPC分类号： G21K108

    CPC分类号： H01J37/21 ,  H01J37/28 ,  H01J2237/1532 ,  H01J2237/216

    摘要： Embodiments in accordance with the invention provide respectively for auto-focus, auto-contrast, and auto-correction of astigmatism in both x and y directions, are independent of focus-induced-image-rotation, sample feature orientation and image deformation, and focus-induced-image magnification change, and are insensitive to various kinds of noise. Poor image contrast is handled by an auto-contrast capability. Embodiments in accordance with the invention can achieve high reliability and repeatability, while providing for faster operation than most prior-art methods.

    摘要翻译： 根据本发明的实施例分别提供了在x和y方向上的像散的自动聚焦，自动对比度和自动校正，独立于聚焦感应图像旋转，样本特征取向和图像变形以及焦点 诱导图像放大变化，并且对各种噪声不敏感。 较差的图像对比度由自动对比度处理。 根据本发明的实施例可以实现高可靠性和重复性，同时提供比大多数现有技术方法更快的操作。

    Method of cleaning a semiconductor device processing chamber after a copper etch process
    58.
    发明授权
    Method of cleaning a semiconductor device processing chamber after a copper etch process 失效
    在铜蚀刻工艺之后清洁半导体器件处理室的方法

    公开(公告)号：US06352081B1

    公开(公告)日：2002-03-05

    申请号：US09350802

    申请日：1999-07-09

    申请人： Danny Chien Lu ,  Allen Zhao ,  Peter Hsieh ,  Hong Shih ,  Li Xu ,  Yan Ye

    发明人： Danny Chien Lu ,  Allen Zhao ,  Peter Hsieh ,  Hong Shih ,  Li Xu ,  Yan Ye

    IPC分类号： B08B900

    CPC分类号： H01L21/67028 ,  Y10S438/905

    摘要： The present invention is a method for removing deposited etch byproducts from surfaces of a semiconductor processing chamber after a copper etch process. The method of the invention comprises the following general steps: (a) an oxidation step, in which interior surfaces of the processing chamber are contacted with an oxidizing plasma; (b) a first non-plasma cleaning step, in which interior surfaces of the processing chamber are contacted with an H+hfac-comprising gas; and (c) a second cleaning step, in which interior surfaces of the processing chamber are contacted with a plasma containing reactive fluorine species, whereby at least a portion of the copper etch byproducts remaining after step (b) are volatilized into gaseous species, which are removed from the processing chamber. The method of the invention is preferably performed at a chamber wall temperature of at least 150° C. in order to achieve optimum cleaning of the chamber at the chamber operating pressures typically used during the cleaning process. The dry cleaning method of the invention can be performed between wafer processing runs without opening the processing chamber, thereby minimizing potential contamination to the chamber as well as chamber downtime.

    摘要翻译： 本发明是在铜蚀刻工艺之后从半导体处理室的表面去除沉积的蚀刻副产物的方法。 本发明的方法包括以下一般步骤：（a）氧化步骤，其中处理室的内表面与氧化等离子体接触; （b）第一非等离子体清洗步骤，其中处理室的内表面与含H + hfac的气体接触; 和（c）第二清洁步骤，其中处理室的内表面与含有反应性氟物质的等离子体接触，由此在步骤（b）之后残留的铜蚀刻副产物的至少一部分挥发成气态物质，其中 从处理室中取出。 本发明的方法优选在至少150℃的室壁温度下进行，以便在清洁过程中通常使用的室的操作压力下实现室的最佳清洁。 本发明的干式清洗方法可以在晶片处理运行之间进行，而不会打开处理室，从而最小化对室的潜在污染以及室停机时间。

    Optical beam shaping and polarization selection on LED with wavelength conversion
    59.
    发明授权
    Optical beam shaping and polarization selection on LED with wavelength conversion 有权

    公开(公告)号：US09759843B2

    公开(公告)日：2017-09-12

    申请号：US13807269

    申请日：2011-06-28

    申请人： Li Xu ,  Bo Pi

    发明人： Li Xu ,  Bo Pi

    IPC分类号： F21V9/00 ,  G02B5/04 ,  G02B5/02 ,  F21V9/14

    CPC分类号： G02B5/04 ,  F21V9/00 ,  F21V9/14 ,  G02B5/0231 ,  G02B5/0278

    摘要： Techniques, devices and materials for light source devices that convert excitation light into different light via wavelength conversion materials. One example of a light source includes an excitation light source; a wavelength conversion material that absorbs light from the excitation light source and emits a longer wavelength light; and a layer of a transparent material that has plural optical structures in contact to or in close proximity to the wavelength conversion material to receive the emitted light from the wavelength conversion material and to modify the received light to produce output light with a desired spatial pattern associated with the plural optical structures.