公开(公告)号：US20130119020A1

公开(公告)日：2013-05-16

申请号：US13308989

申请日：2011-12-01

申请人： Eric Hudson

发明人： Eric Hudson

IPC分类号： H05H1/48 ,  C23F1/00 ,  C23F1/08

CPC分类号： H01J37/32532 ,  H01J37/32091 ,  H01J37/32623 ,  H01J37/32651

摘要： A plasma process chamber includes a top electrode, a bottom electrode disposed opposite the top electrode, the bottom electrode capable of supporting a substrate. The plasma process chamber also includes a plasma containment structure defining a plasma containment region, the plasma containment region being less than an entire surface of the substrate. The plasma containment structure rotates relative to the substrate and wherein the plasma containment region includes a center point of the substrate throughout the rotation of the plasma containment structure relative to the substrate. The plasma containment structure includes multiple gaps. A vacuum source is coupled to the gaps in the plasma containment structure. A method of processing a substrate is also described.

摘要翻译： 等离子体处理室包括顶电极，与顶电极相对设置的底电极，能够支撑衬底的底电极。 等离子体处理室还包括限定等离子体容纳区域的等离子体容纳结构，等离子体容纳区域小于衬底的整个表面。 等离子体容纳结构相对于衬底旋转，并且其中等离子体容纳区域包括在等离子体容纳结构相对于衬底的旋转期间衬底的中心点。 等离子体容纳结构包括多个间隙。 真空源耦合到等离子体容纳结构中的间隙。 还描述了处理衬底的方法。

公开(公告)号：US20130023064A1

公开(公告)日：2013-01-24

申请号：US13188421

申请日：2011-07-21

申请人： Alexei Marakhtanov ,  Mirzafer K. Abatchev ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

发明人： Alexei Marakhtanov ,  Mirzafer K. Abatchev ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

IPC分类号： H01L21/66 ,  H01L21/3065

CPC分类号： H01L21/67069 ,  C23C14/345 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/32137 ,  H01J2237/334 ,  H01J2237/3343 ,  H01J2237/3348 ,  H01L21/3065 ,  H01L21/31116 ,  H01L22/20 ,  H05H2001/4675

摘要： Apparatus, methods, and computer programs for semiconductor processing in a capacitively-coupled plasma chamber are provided. A chamber includes a bottom radio frequency (RF) signal generator, a top RF signal generator, and an RF phase controller. The bottom RF signal generator is coupled to the bottom electrode in the chamber, and the top RF signal generator is coupled to the top electrode. Further, the bottom RF signal is set at a first phase, and the top RF signal is set at a second phase. The RF phase controller is operable to receive the bottom RF signal and operable to set the value of the second phase. Additionally, the RF phase controller is operable to track the first phase and the second phase to maintain a time difference between the maximum of the top RF signal and the minimum of the bottom RF signal at approximately a predetermined constant value, resulting in an increase of the negative ion flux to the surface of the wafer.

摘要翻译： 提供了在电容耦合等离子体室中用于半导体处理的装置，方法和计算机程序。 腔室包括底部射频（RF）信号发生器，顶部RF信号发生器和RF相位控制器。 底部RF信号发生器耦合到室中的底部电极，并且顶部RF信号发生器耦合到顶部电极。 此外，底部RF信号被设置在第一相位，并且顶部RF信号被设置在第二阶段。 RF相位控制器可操作以接收底部RF信号并且可操作以设置第二相位的值。 此外，RF相位控制器可操作以跟踪第一相位和第二相位，以保持最大RF信号的最大值与底部RF信号的最小值之间的时间差大约为预定的常数值，导致增加 到晶片表面的负离子通量。

公开(公告)号：US08357434B1

公开(公告)日：2013-01-22

申请号：US11304223

申请日：2005-12-13

申请人： Dae-han Choi ,  Jisoo Kim ,  Eric Hudson ,  Sangheon Lee ,  Conan Chiang ,  S. M. Reza Sadjadi

发明人： Dae-han Choi ,  Jisoo Kim ,  Eric Hudson ,  Sangheon Lee ,  Conan Chiang ,  S. M. Reza Sadjadi

IPC分类号： H05H1/24

CPC分类号： H01L21/0338 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32724 ,  H01J37/32834

摘要： A method for depositing a conformal film on a substrate in a plasma processing chamber of a plasma processing system, the substrate being disposed on a chuck, the chuck being coupled to a cooling apparatus, is disclosed. The method includes flowing a first gas mixture into the plasma processing chamber at a first pressure, wherein the first gas mixture includes at least carbon, and wherein the first gas mixture has a condensation temperature. The method also includes cooling the chuck below the condensation temperature using the cooling apparatus thereby allowing at least some of the first gas mixture to condense on a surface of the substrate. The method further includes venting the first gas mixture from the processing chamber; flowing a second gas mixture into the plasma processing chamber, the second gas mixture being different in composition from the first gas mixture; and striking a plasma to form the conformal film.

摘要翻译： 公开了一种在等离子体处理系统的等离子体处理室中的基板上沉积保形膜的方法，该基板设置在卡盘上，该卡盘与冷却装置连接。 该方法包括在第一压力下将第一气体混合物流入等离子体处理室，其中第一气体混合物至少包括碳，并且其中第一气体混合物具有冷凝温度。 该方法还包括使用冷却装置将夹盘冷却至冷凝温度以下，从而允许至少一些第一气体混合物在基板的表面上冷凝。 该方法还包括从处理室排出第一气体混合物; 将第二气体混合物流入等离子体处理室，第二气体混合物的组成与第一气体混合物不同; 并冲击等离子体以形成保形膜。

公开(公告)号：US07994794B2

公开(公告)日：2011-08-09

申请号：US12786405

申请日：2010-05-24

申请人： Christopher Kimball ,  Eric Hudson ,  Douglas Keil ,  Alexei Marakhtanov

发明人： Christopher Kimball ,  Eric Hudson ,  Douglas Keil ,  Alexei Marakhtanov

IPC分类号： G01N27/26 ,  H05B31/26

CPC分类号： H01J37/32431 ,  H01J37/32935 ,  H05H1/0081 ,  Y10T29/49002

摘要： Methods using a probe apparatus configured to measure a set of electrical characteristics in a plasma include providing a chamber wall including at least a set of plasma chamber surfaces configured to be exposed to a plasma, the plasma having a set of electrical characteristics. The method includes installing a collection disk structure configured to be exposed to the plasma, wherein the collection disk structure having at least a body disposed within the chamber wall and a collection disk structure surface that is either coplanar or recessed with at least one of the set of plasma chamber surfaces and providing a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers. The method may include coupling a thermal grounding element with the conductive path for providing thermal grounding to at least the conductive path and may alternatively or additionally include disposing an insulation barrier configured to substantially electrically separate at least one of the collection disk and the conductive path.

摘要翻译： 使用构造成测量等离子体中的一组电特性的探针装置的方法包括提供包括至少一组被配置为暴露于等离子体的等离子体室表面的室壁，所述等离子体具有一组电特性。 该方法包括安装被配置为暴露于等离子体的收集盘结构，其中所述收集盘结构具有至少一个设置在所述室壁内的主体和与所述集合中的至少一个共面或凹入的收集盘结构表面 的等离子体室表面，并且提供导电路径，其被配置为将所述一组电特性从所述收集盘结构传输到一组换能器。 该方法可以包括将热接地元件与导电路径耦合，以便至少提供导电路径的热接地，并且可替代地或另外地包括设置绝缘屏障，该隔离屏障构造成基本上电分离收集盘和导电路径中的至少一个。

公开(公告)号：US20110059615A1

公开(公告)日：2011-03-10

申请号：US12945314

申请日：2010-11-12

申请人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andreas Fischer

发明人： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andreas Fischer

IPC分类号： H01L21/3065

CPC分类号： H01J37/321 ,  H01J37/32091 ,  H01J2237/03

摘要： A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.

摘要翻译： 用于感应地限制在等离子体处理装置中形成的电容耦合RF等离子体等离子体的装置。 该装置包括上电极和下电极，其适于支撑衬底并在衬底和上电极之间产生等离子体。 该装置包括同心地围绕上电极的电介质支撑环和安装在电介质支撑环上的多个线圈单元。 每个线圈单元包括沿着电介质支撑环的径向定位的铁磁芯和缠绕在每个铁磁芯周围的至少一个线圈。 线圈单元在从RF电源接收到RF功率时产生电场和磁场，其减少等离子体的带电粒子的数量远离等离子体扩散。

公开(公告)号：US07892445B1

公开(公告)日：2011-02-22

申请号：US11853968

申请日：2007-09-12

申请人： David Wei ,  Howard Dang ,  Masahiro Watanabe ,  Sean Kang ,  Kenji Takeshita ,  Mayumi Block ,  Stephen Sirard ,  Eric Hudson

发明人： David Wei ,  Howard Dang ,  Masahiro Watanabe ,  Sean Kang ,  Kenji Takeshita ,  Mayumi Block ,  Stephen Sirard ,  Eric Hudson

IPC分类号： B44C1/22

CPC分类号： H01L21/67069 ,  H01L21/6831

摘要： A method of dechucking a wafer, with a low-k dielectric layer, held onto an electrostatic chuck by an electrostatic charge in a plasma chamber is provided. The electrostatic clamping voltage is removed. An essentially argon free dechucking gas is provided into the plasma chamber. A dechucking plasma is formed from the dechucking gas in the plasma chamber. The dechucking plasma is stopped.

摘要翻译： 提供了通过在等离子体室中的静电电荷将具有低k电介质层的晶片脱扣保持在静电卡盘上的方法。 静电钳位电压被去除。 在等离子体室中提供基本上无氩的脱扣气体。 从等离子体室中的脱扣气体形成脱扣等离子体。 脱扣等离子体停止。

公开(公告)号：US20110024046A1

公开(公告)日：2011-02-03

申请号：US12905046

申请日：2010-10-14

申请人： Douglas Keil ,  Lumin Li ,  Reza Sadjadi ,  Eric Hudson ,  Eric Lenz ,  Rajinder Dhindsa

发明人： Douglas Keil ,  Lumin Li ,  Reza Sadjadi ,  Eric Hudson ,  Eric Lenz ,  Rajinder Dhindsa

IPC分类号： H01L21/306

CPC分类号： H01J37/32183 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32532

摘要： An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The lower electrode is also defined to support a semiconductor wafer in exposure to the plasma. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is defined by a doped semiconductor material. A doping concentration within the upper electrode varies radially from a center to a periphery of the upper electrode. The electric potential of the upper electrode influences an electric potential of the plasma within the chamber.

摘要翻译： 提供了一种用于半导体晶片等离子体处理的装置。 该装置包括具有下电极和设置在其中的上电极的腔室。 下电极被定义为传输射频电流通过腔室以在腔室内产生等离子体。 下电极也被限定为支持暴露于等离子体的半导体晶片。 上电极设置在下电极的上方并与之隔开的关系。 上电极由掺杂的半导体材料限定。 上电极内的掺杂浓度从上电极的中心向周边径向变化。 上电极的电位影响室内等离子体的电位。

公开(公告)号：US07829468B2

公开(公告)日：2010-11-09

申请号：US11447946

申请日：2006-06-07

申请人： Douglas Keil ,  Eric Hudson ,  Chris Kimball ,  Andreas Fischer

发明人： Douglas Keil ,  Eric Hudson ,  Chris Kimball ,  Andreas Fischer

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： C23C16/52 ,  C23C16/509 ,  H01J37/32935 ,  H01J37/3299

摘要： A method of fault detection for use in a plasma processing chamber is provided. The method comprises monitoring plasma parameters within a plasma chamber with a single planar ion flux (PIF) probe, analyzing the resulting information, measuring the plasma parameters as a function of time and analyzing the resulting data. The data can be observed, characterized, compared with reference data, digitized, processed, or analyzed to reveal a specific fault. The PIF probe is preferably positioned at a grounded surface within the reactor. Chamber faults that can be detected include a build-up of process by-products in the process chamber, a helium leak, a match re-tuning event, a poor stabilization rate, and a loss of plasma confinement.

摘要翻译： 提供了一种用于等离子体处理室的故障检测方法。 该方法包括使用单个平面离子通量（PIF）探针监测等离子体室内的等离子体参数，分析所得信息，测量作为时间的函数的等离子体参数并分析所得数据。 数据可以观察，表征，与参考数据进行比较，数字化，处理或分析，以显示特定故障。 PIF探针优选地位于反应器内的接地表面上。 可以检测到的室内故障包括处理室中的过程副产物的积聚，氦泄漏，匹配重新调谐事件，差的稳定化速率和等离子体约束的损失。

公开(公告)号：US07479207B2

公开(公告)日：2009-01-20

申请号：US11377074

申请日：2006-03-15

申请人： Christopher Kimball ,  Eric Hudson ,  Douglas Keil ,  Alexei Marakhtanov

发明人： Christopher Kimball ,  Eric Hudson ,  Douglas Keil ,  Alexei Marakhtanov

IPC分类号： C23F1/02

CPC分类号： H01J37/32935

摘要： A plasma probe assembly for use in a plasma processing chamber is provided. A semiconductor probe element with a probe surface at a first end of the semiconductor probe element is provided. An electrical connector is electrically connected to the semiconductor probe element. An electrically insulating sleeve surrounds at least part of the probe element. An adjustment device is connected to the semiconductor probe so that the probe surface is coplanar with an interior chamber surface of the plasma processing chamber.

摘要翻译： 提供了一种用于等离子体处理室的等离子体探针组件。 提供了在半导体探针元件的第一端具有探针表面的半导体探针元件。 电连接器电连接到半导体探针元件。 电绝缘套管围绕探头元件的至少一部分。 调整装置连接到半导体探针，使得探针表面与等离子体处理室的内部腔室表面共面。

公开(公告)号：US20080066861A1

公开(公告)日：2008-03-20

申请号：US11948926

申请日：2007-11-30

申请人： Christopher Kimball ,  Eric Hudson ,  Douglas Keil ,  Alexei Marakhtanov

发明人： Christopher Kimball ,  Eric Hudson ,  Douglas Keil ,  Alexei Marakhtanov

IPC分类号： C23F1/00 ,  C23C16/448

CPC分类号： H01J37/32431 ,  H01J37/32935 ,  H05H1/0081 ,  Y10T29/49002

摘要： A probe apparatus configured to measure a set of electrical characteristics in a plasma processing chamber, the plasma processing chamber including a set of plasma chamber surfaces configured to be exposed to a plasma is disclosed. Tile probe apparatus includes a collection disk structure configured to be exposed to the plasma, whereby the collection disk stricture is coplanar with at least one of the set of plasma chamber surfaces. The probe apparatus also includes a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers, wherein the set of electrical characteristics is generated by an ion flux of the plasma. The probe apparatus further includes an insulation barrier configured to substantially electrically separate the collection disk and the conductive path from the set of plasma chamber surfaces.

摘要翻译： 公开了一种被配置为测量等离子体处理室中的一组电特性的探针装置，所述等离子体处理室包括被配置为暴露于等离子体的一组等离子体室表面。 平铺探针装置包括构造成暴露于等离子体的收集盘结构，由此收集盘狭窄与所述一组等离子体腔表面中的至少一个共面。 探针装置还包括导电路径，该导电路径被配置为将该组特征从收集盘结构发送到一组换能器，其中该组电特性由等离子体的离子通量产生。 探针装置还包括绝缘屏障，其被配置为基本上将采集盘和导电路径与该组等离子体腔表面电分离。