公开(公告)号：US20110049593A1

公开(公告)日：2011-03-03

申请号：US12861153

申请日：2010-08-23

申请人： Hans-Joachim Schulze ,  Frank Pfirsch

发明人： Hans-Joachim Schulze ,  Frank Pfirsch

IPC分类号： H01L29/78

CPC分类号： H01L29/7802 ,  H01L29/51 ,  H01L29/513 ,  H01L29/516 ,  H01L29/517 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component comprising a semiconductor body, a channel zone in the semiconductor body, a channel control electrode adjacent to the channel zone, and a dielectric layer between the channel zone and the channel control electrode, wherein the dielectric layer has a relative dielectric constant εr with a negative temperature coefficient.

摘要翻译： 一种半导体元件，包括半导体本体，半导体主体中的沟道区，与沟道区相邻的沟道控制电极，以及沟道区和沟道控制电极之间的介电层，其中介电层具有相对介电常数ε ; r具有负温度系数。

公开(公告)号：US20110024791A1

公开(公告)日：2011-02-03

申请号：US12512285

申请日：2009-07-30

申请人： Hans-Joachim Schulze ,  Frank Pfirsch ,  Franz-Josef Niedemostheide

发明人： Hans-Joachim Schulze ,  Frank Pfirsch ,  Franz-Josef Niedemostheide

IPC分类号： H01L29/70 ,  H01L29/861 ,  H01L21/8222

CPC分类号： H01L29/861 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/0834 ,  H01L29/402 ,  H01L29/407 ,  H01L29/66136 ,  H01L29/7395

摘要： A bipolar semiconductor device and method are provided. One embodiment provides a bipolar semiconductor device including a first semiconductor region of a first conductivity type having a first doping concentration, a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region, and a plurality of third semiconductor regions of the first conductivity type at least partially arranged in the first semiconductor region and having a doping concentration which is higher than the first doping concentration. Each of the third semiconductor regions is provided with at least one respective junction termination structure.

摘要翻译： 提供了一种双极半导体器件和方法。 一个实施例提供一种双极半导体器件，包括具有第一掺杂浓度的第一导电类型的第一半导体区域，形成与第一半导体区域的pn结的第二导电类型的第二半导体区域，以及多个第三半导体区域 所述第一导电类型至少部分地布置在所述第一半导体区域中并且具有高于所述第一掺杂浓度的掺杂浓度。 每个第三半导体区域设置有至少一个相应的连接端接结构。

公开(公告)号：US07791138B2

公开(公告)日：2010-09-07

申请号：US12261838

申请日：2008-10-30

申请人： Frank Pfirsch

发明人： Frank Pfirsch

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L27/095

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/7806 ,  H01L29/7825 ,  H01L29/872

摘要： A semiconductor component and method of making a semiconductor component. One embodiment provides a first metallization structure electrically coupled to charge compensation zones via an ohmic contact and to drift zones via a Schottky contact. A second metallization structure, which is arranged opposite the first metallization structure, is electrically coupled to the charge compensation zones via a Schottky contact and to drift zones via an ohmic contact.

摘要翻译： 一种制造半导体元件的半导体元件和方法。 一个实施例提供了电耦合到电荷补偿区经由欧姆接触并通过肖特基接触漂移区的第一金属化结构。 与第一金属化结构相对布置的第二金属化结构通过肖特基接触电耦合到电荷补偿区，并通过欧姆接触漂移区。

公开(公告)号：US20090218621A1

公开(公告)日：2009-09-03

申请号：US11996906

申请日：2006-07-27

申请人： Frank Pfirsch ,  Anton Mauder ,  Armin Willmeroth ,  Hans-Joachim Schulze ,  Stefan Sedlmaier ,  Markus Zundel ,  Franz Hirler ,  Arunjai Mittal

发明人： Frank Pfirsch ,  Anton Mauder ,  Armin Willmeroth ,  Hans-Joachim Schulze ,  Stefan Sedlmaier ,  Markus Zundel ,  Franz Hirler ,  Arunjai Mittal

IPC分类号： H01L29/78 ,  H01L27/06 ,  H01L29/739

CPC分类号： H01L29/7803 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4916 ,  H01L29/66734 ,  H01L29/7802 ,  H01L29/7804 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872

摘要： A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.

摘要翻译： 具有漂移区域和漂移控制区域的半导体部件。 一个实施例包括半导体本体中具有第一导电类型的漂移区的半导体本体。 由半导体材料组成的漂移控制区域至少部分地布置成与半导体本体中的漂移区域相邻。 在漂移区域和漂移控制区域之间布置积累电介质。

公开(公告)号：US07538412B2

公开(公告)日：2009-05-26

申请号：US11480150

申请日：2006-06-30

申请人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Helmut Strack ,  Carsten Schaeffer ,  Frank Pfirsch

发明人： Hans-Joachim Schulze ,  Franz-Josef Niedernostheide ,  Helmut Strack ,  Carsten Schaeffer ,  Frank Pfirsch

IPC分类号： H01L27/082

CPC分类号： H01L29/861 ,  H01L29/7396

摘要： A semiconductor device includes a semiconductor material, the semiconductor material including a base region and a field stop zone including a first side adjacent the base region and a second side opposite the first side. The field stop zone includes a first dopant implant and a second dopant implant. The first dopant implant has a first dopant concentration maximum and the second dopant implant has a second dopant concentration maximum with the first dopant concentration maximum being less than the second dopant concentration maximum, and being located closer to the second side than the second dopant concentration maximum.

摘要翻译： 一种半导体器件包括半导体材料，该半导体材料包括一个基极区域和一个具有邻近基极区域的第一侧面和与第一侧相对的第二侧面的场阻挡区域。 场停止区包括第一掺杂剂注入和第二掺杂剂注入。 第一掺杂剂注入具有最大的第一掺杂剂浓度，并且第二掺杂剂注入具有最大的第二掺杂剂浓度，其中第一掺杂剂浓度最大值小于第二掺杂剂浓度最大值，并且位于比第二掺杂剂浓度最大值更靠近第二侧 。

公开(公告)号：US07436023B2

公开(公告)日：2008-10-14

申请号：US11464004

申请日：2006-08-11

申请人： Franz Hirler ,  Anton Mauder ,  Frank Pfirsch

发明人： Franz Hirler ,  Anton Mauder ,  Frank Pfirsch

IPC分类号： H01L23/58

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/8083 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component having a drift path (2) which is formed in a semiconductor body (1), is composed of a semiconductor material of first conductance type. The drift path (2) is arranged between at least one first and one second electrode (3, 4) and has a trench structure in the form of at least one trench (18). A dielectric material which is referred to as a high-k material and has a relative dielectric constant εr where εr≧20 is arranged in the trench structure such that at least one high-k material region (5) and one semiconductor material region (6) of the first conductance type are arranged in the area of the drift path (2).

摘要翻译： 具有形成在半导体本体（1）中的漂移路径（2）的半导体部件由第一导电型半导体材料构成。 漂移路径（2）布置在至少一个第一和第二电极（3,4）之间，并具有至少一个沟槽（18）形式的沟槽结构。 被称为高k材料并且具有相对介电常数εε的电介质材料，其中ε= r / O 2 = 20布置在沟槽结构中，使得在 第一电导型的至少一个高k材料区域（5）和一个半导体材料区域（6）被布置在漂移路径（2）的区域中。

公开(公告)号：US20080197405A1

公开(公告)日：2008-08-21

申请号：US11677430

申请日：2007-02-21

申请人： Frank Pfirsch ,  Walter Rieger

发明人： Frank Pfirsch ,  Walter Rieger

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/0634 ,  H01L29/66727

摘要： A semiconductor structure comprises a plurality of columns doped with alternating dopants. The columns are separated by trenches, and the dopant is diffused in the doped columns. The trenches are filled with semiconductor material. Other embodiments may be described and claimed.

摘要翻译： 半导体结构包括掺杂有交替掺杂剂的多个列。 这些列由沟槽分开，并且掺杂剂在掺杂柱中扩散。 沟槽填充有半导体材料。 可以描述和要求保护其他实施例。

公开(公告)号：US20080179666A1

公开(公告)日：2008-07-31

申请号：US12019295

申请日：2008-01-24

申请人： Christian Foerster ,  Georg Ehrentraut ,  Frank Pfirsch ,  Thomas Raker

发明人： Christian Foerster ,  Georg Ehrentraut ,  Frank Pfirsch ,  Thomas Raker

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/4236 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/66348 ,  H01L29/66666 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7813 ,  H01L29/7827

摘要： A semiconductor device having a trench gate and method for manufacturing is disclosed. One embodiment includes a first semiconductor area and a second semiconductor area, a semiconductor body area between the first semiconductor area and the second semiconductor area, and a gate arranged in a trench and separated from the semiconductor body by an insulation layer, wherein the trench has a top trench portion which extends from the semiconductor surface at least to a depth which is greater than a depth of the first semiconductor area, wherein the trench further has a bottom trench portion extending subsequent to the top trench portion at least up to the second semiconductor area, and wherein the top trench portion has a first lateral dimension and the bottom trench portion has a second lateral dimension which is greater than the first lateral dimension.

摘要翻译： 公开了一种具有沟槽栅的半导体器件及其制造方法。 一个实施例包括第一半导体区域和第二半导体区域，第一半导体区域和第二半导体区域之间的半导体主体区域以及布置在沟槽中并且通过绝缘层与半导体本体分离的栅极，其中沟槽具有 至少从所述半导体表面延伸到比所述第一半导体区域的深度大的深度的顶部沟槽部分，其中所述沟槽还具有在所述顶部沟槽部分之后延伸的底部沟槽部分，所述顶部沟槽部分至少直到所述第二半导体 并且其中顶部沟槽部分具有第一横向尺寸，并且底部沟槽部分具有大于第一横向尺寸的第二横向尺寸。

公开(公告)号：US20080122001A1

公开(公告)日：2008-05-29

申请号：US11944903

申请日：2007-11-26

申请人： Frank Pfirsch ,  Hans-Joachim Schulze ,  Franz-Josef Niedernostheide

发明人： Frank Pfirsch ,  Hans-Joachim Schulze ,  Franz-Josef Niedernostheide

IPC分类号： H01L29/94 ,  H01L21/22

CPC分类号： H01L29/7802 ,  H01L21/263 ,  H01L21/266 ,  H01L21/322 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/66712

摘要： An integrated circuit and method for making an integrated circuit including doping a semiconductor body is disclosed. One embodiment provides defect-correlated donors and/or acceptors. The defects required for this are produced by electron irradiation of the semiconductor body. Form defect-correlated donors and/or acceptors with elements or element compounds are introduced into the semiconductor body.

摘要翻译： 公开了一种用于制造包括掺杂半导体本体的集成电路的集成电路和方法。 一个实施例提供缺陷相关的供体和/或受体。 所需的缺陷是通过半导体本体的电子照射产生的。 具有元素或元素化合物的形式缺陷相关的供体和/或受体被引入半导体体。

公开(公告)号：US20070190714A1

公开(公告)日：2007-08-16

申请号：US11606628

申请日：2006-11-30

申请人： Franz Hirler ,  Frank Pfirsch

发明人： Franz Hirler ,  Frank Pfirsch

IPC分类号： H01L21/8238 ,  H01L29/00

CPC分类号： H01L21/26513 ,  H01L29/0847 ,  H01L29/0878

摘要： A method is disclosed for fabricating a trench transistor, in which there are formed, within an epitaxial layer deposited above a substrate of a first conductivity type, a trench and, within the trench, a gate dielectric and a gate electrode and, in a body region of a second conductivity type adjoining the trench a source region of the first conductivity type, a drift region of the first conductivity type forming a drain zone being formed at the end of the junction between the substrate and the epitaxial layer by means of one or more high-energy implantations, the lower end of the trench projecting into said drift region, and to a trench transistor of this type formed as a low-voltage transistor.

摘要翻译： 公开了一种用于制造沟槽晶体管的方法，其中在形成于外延层内的外延层中形成第一导电类型的衬底，沟槽和沟槽内的栅极电介质和栅电极，并且在体内 第二导电类型的与第一导电类型的源极区相邻的第二导电类型的区域，形成漏极区的第一导电类型的漂移区域通过一个或多个第一导电类型的衬底和外延层之间的结的端部形成 更高能量的注入，突出到所述漂移区域的沟槽的下端，以及形成为低压晶体管的这种类型的沟槽晶体管。