利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

121 条记录 (耗时 0.039 秒)

    Plasma shutter forming apparatus and forming method
    51.
    发明授权
    Plasma shutter forming apparatus and forming method 失效
    等离子体快门成型装置和成型方法

    公开(公告)号：US08755103B2

    公开(公告)日：2014-06-17

    申请号：US12910089

    申请日：2010-10-22

    申请人： Masayuki Suzuki ,  Hiromitsu Kiriyama ,  Izuru Daito ,  Hajime Okada ,  Hironori Sugiyama ,  Shinichi Matsuoka ,  Hirofumi Kan

    发明人： Masayuki Suzuki ,  Hiromitsu Kiriyama ,  Izuru Daito ,  Hajime Okada ,  Hironori Sugiyama ,  Shinichi Matsuoka ,  Hirofumi Kan

    IPC分类号： G02B26/04

    CPC分类号： H05H15/00 ,  A61N2005/1088 ,  H01S3/005

    摘要： A plasma shutter forming apparatus for forming a plasma shutter used in a system configured to generate and accelerate radiations by irradiating a target with a laser pulse and generating a high-density plasma for blocking the laser pulse which is returned as a feedback light to upstream of the system without being absorbed by the high-density plasma, including a plasma shutter generating target, and a plasma shutter triggering laser irradiator, wherein the laser pulse from the plasma shutter triggering laser irradiator is directed to the plasma shutter generating target to generate the high-density plasma and form the plasma shutter, thereby blocking the laser pulse which is returned as the feedback light. Optics are prevented from becoming damaged by feedback light reflecting when generating the high-density plasma in a laser-driven radiation generating system and returning back to the upstream of the laser system.

    摘要翻译： 一种等离子体快门形成装置，用于形成用于系统的等离子体快门，其被配置为通过用激光脉冲照射目标产生和加速辐射，并产生用于阻挡作为反馈光返回到上游的激光脉冲的高密度等离子体 该系统不被高密度等离子体吸收，包括等离子体快门产生靶和等离子体快门触发激光照射器，其中来自等离子体快门触发激光照射器的激光脉冲被引导到等离子体快门产生目标以产生高 形成等离子体快门，从而阻挡作为反馈光返回的激光脉冲。 在激光驱动辐射发生系统中产生高密度等离子体并返回到激光系统的上游时，防止光反射的反射光被损坏。

    SEMICONDUCTOR LASER APPARATUS
    53.
    发明申请
    SEMICONDUCTOR LASER APPARATUS 有权
    半导体激光设备

    公开(公告)号：US20110206083A1

    公开(公告)日：2011-08-25

    申请号：US12676313

    申请日：2010-03-03

    申请人： Yujin ZHENG ,  Hirofumi Kan ,  Xin Gao

    发明人： Yujin ZHENG ,  Hirofumi Kan ,  Xin Gao

    IPC分类号： H01S5/00

    CPC分类号： G02B19/0057 ,  G02B19/0028 ,  G02B27/0961 ,  G02B27/0977 ,  H01S5/005 ,  H01S5/4012 ,  H01S5/4025 ,  H01S5/4062

    摘要： This invention relates to semiconductor laser apparatus with a structure for reducing the divergence angle of output light and for narrowing the spectral width. The semiconductor laser apparatus has at least a semiconductor laser array, a collimator lens, a path rotator, and an optical element with a reflecting function. The collimator lens collimates a plurality of laser beams from the semiconductor laser array, in a predetermined direction. The path rotator outputs each beam collimated in the predetermined direction, with a predetermined divergence angle in the predetermined direction in a state in which a transverse section of the beam is rotated by about 90°. The optical element is arranged at a position where at least a part of each beam from the path rotator arrives, and constitutes at least a part of an external resonator. This optical element reflects a part of each beam from the path rotator to return the reflected part of each beam to the active layer in the semiconductor laser array.

    摘要翻译： 本发明涉及一种半导体激光装置，其具有用于减小输出光的发散角并缩小光谱宽度的结构。 半导体激光装置至少具有半导体激光器阵列，准直透镜，路径旋转器和具有反射功能的光学元件。 准直透镜沿预定方向准直来自半导体激光器阵列的多个激光束。 在光束的横截面旋转大约90°的状态下，路径旋转器输出沿预定方向准直的每个光束，在预定方向上具有预定的发散角。 光学元件被布置在来自路径旋转器的每个光束的至少一部分到达的位置，并且构成外部谐振器的至少一部分。 该光学元件反射来自路径旋转器的每个光束的一部分，以将每个光束的反射部分返回到半导体激光器阵列中的有源层。

    Solid laser module, optical amplifier, and laser oscillator
    55.
    发明授权
    Solid laser module, optical amplifier, and laser oscillator 有权
    固体激光模块，光放大器和激光振荡器

    公开(公告)号：US07653100B2

    公开(公告)日：2010-01-26

    申请号：US11663960

    申请日：2005-11-24

    申请人： Yasukazu Izawa ,  Masayuki Fujita ,  Shigeki Tokita ,  Tadashi Ikegawa ,  Toshiyuki Kawashima ,  Hirofumi Kan

    发明人： Yasukazu Izawa ,  Masayuki Fujita ,  Shigeki Tokita ,  Tadashi Ikegawa ,  Toshiyuki Kawashima ,  Hirofumi Kan

    IPC分类号： H01S3/04

    CPC分类号： H01S3/0604 ,  H01S3/025 ,  H01S3/027 ,  H01S3/0405 ,  H01S3/042 ,  H01S3/08072 ,  H01S3/0816 ,  H01S3/09415 ,  H01S3/2308 ,  H01S3/235

    摘要： The present invention relates to a solid-state laser module, and so on, having a structure for enabling optical output of high quality to be obtained. The solid-state laser module includes a vacuum container with windows, and a heat sink, a solid-state laser medium, and a pair of transparent members are housed in the vacuum container in an integrally assembled state. The solid-state laser medium and the pair of transparent members respectively have disk shapes, and the pair of transparent members sandwich the solid-state laser medium. The thermal conductivity of each of the pair of transparent members is higher than the thermal conductivity of the solid-state laser medium. The heat sink has a shape that simultaneously clamps portions of the pair of transparent members that sandwich the solid-state laser medium in between, and a heat insulating region, with a thermal conductivity that is lower than the thermal conductivity of the solid-state laser medium, is provided between the heat sink and the solid-state laser medium.

    摘要翻译： 本发明涉及具有能够获得高质量的光输出的结构的固态激光器模块等。 固体激光器模块包括具有窗口的真空容器，并且散热器，固态激光介质和一对透明构件以整体组装的状态容纳在真空容器中。 固体激光介质和一对透明构件分别具有圆盘形状，并且一对透明构件夹着固态激光介质。 一对透明构件中的每一个的热导率高于固态激光介质的热导率。 散热器具有同时夹持固定状态的激光介质的一对透明构件的一部分与隔热区域的热传导率低于固体激光器的热导率的形状 介质，设置在散热器和固态激光介质之间。

    Heater-attached alkali-encapsulated cell and alkali laser apparatus
    56.
    发明授权
    Heater-attached alkali-encapsulated cell and alkali laser apparatus 失效
    加热器附着碱封装电池和碱激光设备

    公开(公告)号：US07586968B2

    公开(公告)日：2009-09-08

    申请号：US11878745

    申请日：2007-07-26

    申请人： Minoru Niigaki ,  You Wang ,  Yujin Zheng ,  Hirofumi Kan

    发明人： Minoru Niigaki ,  You Wang ,  Yujin Zheng ,  Hirofumi Kan

    IPC分类号： H01S3/22

    CPC分类号： H01S3/227 ,  H01S3/02 ,  H01S3/041 ,  H01S3/08054 ,  H01S3/0815 ,  H01S3/09415 ,  H01S3/1028 ,  H01S5/4062

    摘要： An alkali-encapsulated cell internally having an alkali metal vapor G encapsulated is provided with first and second heaters 11, 12. The alkali-encapsulated cell 10 has first and second end faces 10a, 10b opposed to each other, and a side face 10c connecting the two end faces 10a, 10b. Each of the first and second heaters 11, 12 has a covering portion 11B, 12B and an extending portion 11C, 12C. Some portions of the alkali-encapsulated cell 10 are inserted in the covering portions 11B, 12B. On the other hand, the extending portions 11C, 12C extend in directions away from the alkali-encapsulated cell 10. The first and second heaters 11, 12 are separated from each other with a distance d0 between them in an opposing direction of the first and second end faces 10a, 10b.

    摘要翻译： 在内部具有封入了碱金属蒸气G的碱封装的电池设置有第一和第二加热器11,12。碱封装的电池10具有彼此相对的第一和第二端面10a，10b，以及连接 两个端面10a，10b。 第一和第二加热器11,12中的每一个具有覆盖部分11B，12B和延伸部分11C，12C。 碱封装电池10的一部分插入到覆盖部11B，12B中。 另一方面，延伸部分11C，12C沿着远离碱封装的电池10的方向延伸。第一和第二加热器11,12彼此分开，在它们之间的距离d0在第一和第二加热器10的相反方向上 第二端面10a，10b。

    Semiconductor laser equipment
    57.
    发明授权
    Semiconductor laser equipment 失效
    半导体激光设备

    公开(公告)号：US07567598B2

    公开(公告)日：2009-07-28

    申请号：US10593033

    申请日：2005-03-08

    申请人： Hirofumi Miyajima ,  Hirofumi Kan

    发明人： Hirofumi Miyajima ,  Hirofumi Kan

    IPC分类号： H01S3/04

    CPC分类号： H01S5/405 ,  H01L23/473 ,  H01L2924/0002 ,  H01S5/024 ,  H01S5/02407 ,  H01L2924/00

    摘要： This invention relates to a semiconductor laser apparatus having a structure to prevent corrosion in a refrigerant flow path of a heat sink and cool stably a semiconductor laser array over a long period. The semiconductor laser apparatus has a semiconductor laser stack, a refrigerant supplier, an insulating piping, and a refrigerant. The refrigerant supplier supplies the refrigerant to the semiconductor laser stack. The refrigerant is comprised of fluorocarbon. The insulating piping is an insulating piping with flexibility. An grounded conductive material is arranged inside the insulating piping. The conductive material operates to remove static electricity generated where the refrigerant flows inside the insulating piping.

    摘要翻译： 本发明涉及一种具有防止散热器制冷剂流路中的腐蚀并长时间稳定地冷却半导体激光器阵列的结构的半导体激光装置。 半导体激光装置具有半导体激光器堆叠，制冷剂供给器，绝缘管道和制冷剂。 制冷剂供应器将制冷剂供应到半导体激光器堆叠。 制冷剂由碳氟化合物构成。 绝缘管是具有柔性的绝缘管。 绝缘管道内布置有接地导电材料。 导电材料用于除去制冷剂在绝热管道内流动的静电。

    Semiconductor laser device and semiconductor laser device array
    59.
    发明申请
    Semiconductor laser device and semiconductor laser device array 失效
    半导体激光器件和半导体激光器件阵列

    公开(公告)号：US20090022194A1

    公开(公告)日：2009-01-22

    申请号：US11659198

    申请日：2005-08-04

    申请人： Akiyoshi Watanabe ,  Hirofumi Miyajima ,  Hirofumi Kan

    发明人： Akiyoshi Watanabe ,  Hirofumi Miyajima ,  Hirofumi Kan

    IPC分类号： H01S5/20

    CPC分类号： H01S5/4031 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/16 ,  H01S5/2231 ,  H01S2301/18

    摘要： In an active layer 15 of a semiconductor laser device 3, a refractive index type main waveguide 4 is formed by a ridge portion 9a of a p-type clad layer 17. Side surfaces 4g and 4h of the main waveguide 4 form a relative angle θ, based on a total reflection critical angle θc at the side surfaces 4g and 4h, with respect to a light emitting surface 1a and a light reflecting surface 1b. The main waveguide 4 is separated by predetermined distances from the light emitting surface 1a and the light reflecting surface 1b, and optical path portions 8a and 8b, for making a laser light L1 pass through, are disposed between one end of the main waveguide 4 and the light emitting surface 1a and between the other end of the main waveguide 4 and the light reflecting surface 1b. The optical path portions 8a and 8b are gain type waveguides and emit light components L2 and L3, which, among the light passing through the optical path portions 8a and 8b, deviate from a direction of a predetermined axis A, to the exterior. A semiconductor laser device and a semiconductor laser device array that can emit laser light of comparatively high intensity and can reduce side peaks are thereby realized.

    摘要翻译： 在半导体激光器件3的有源层15中，折射率型主波导4由p型覆盖层17的脊部9a形成。主波导4的侧表面4g和4h形成相对角θ 基于相对于发光表面1a和光反射表面1b在侧表面4g和4h处的全反射临界角度。 主波导4与发光面1a和光反射面1b分离规定距离，激光L1通过的光路部8a，8b配置在主波导管4的一端和 发光表面1a和主波导4的另一端和光反射表面1b之间。 光路部分8a和8b是增益型波导，并且发射光通过光路部分8a和8b的光从预定轴线A的方向偏离的光分量L2和L3到外部。 从而可以实现能够发出较高强度的激光并能够减少侧峰的半导体激光器件和半导体激光器件阵列。

    Passive Q switch laser device
    60.
    发明申请
    Passive Q switch laser device 有权
    被动Q开关激光装置

    公开(公告)号：US20090016385A1

    公开(公告)日：2009-01-15

    申请号：US11661327

    申请日：2005-09-06

    申请人： Hiroshi Sakai ,  Hirofumi Kan ,  Takunori Taira

    发明人： Hiroshi Sakai ,  Hirofumi Kan ,  Takunori Taira

    IPC分类号： H01S3/113

    CPC分类号： H01S3/113 ,  H01S3/0014 ,  H01S3/0621 ,  H01S3/0627 ,  H01S3/08036 ,  H01S3/10061

    摘要： A laser apparatus 10 includes: a laser medium 11 arranged between a pair of reflecting means 12A and 12B of an optical resonator 12 and adapted to be excited to emit light; a saturable absorber 14 arranged on the optical axis L of the optical resonator 12 between the pair of reflecting means, the transmissivity thereof being adapted to increase with the absorption of emitted light 21 from the laser medium; and an excitation light source unit 13 adapted to output light 22 having a wavelength that excites the laser medium. The saturable absorber 14 is a crystalline body having first to third mutually perpendicular crystallographic axes and is arranged in the optical resonator 12 in such a manner as to have different transmissivities for emitted light in two mutually perpendicular polarization directions. In this case, a laser oscillation occurs for emitted light in the polarization direction that shows the greater transmissivity, and it is therefore possible to obtain laser beams having a stabilized polarization direction.

    摘要翻译： 激光装置10包括：激光介质11，配置在光谐振器12的一对反射装置12A和12B之间，并被激发以发光; 在所述一对反射装置之间布置在所述光学谐振器12的光轴L上的可饱和吸收体14，其透射率适于随着来自激光介质的发射光21的吸收而增加; 以及适于输出具有激发激光介质的波长的光22的激发光源单元13。 可饱和吸收体14是具有第一至第三相互垂直的结晶轴的结晶体，并且以对于两个相互垂直的偏振方向的发射光具有不同透射率的方式设置在光学谐振器12中。 在这种情况下，对于显示较大透射率的偏振方向的发光，发生激光振荡，因此可以获得具有稳定的偏振方向的激光束。